穿隔技術 的英文怎麼說
中文拼音 [chuāngéjìshù]
穿隔技術
英文
transseptal technique-
According to the thickness of the soi film, high voltage ic based on soi material ( soi - hvic ) can be divided into thin - film and thick - film. for thin - film soi - hvic, linear drift region doping profile is adopted to satisfy a certain breakdown - voltage, but this process is too complex and its self - heating effect is obvious ; for thick - film soi - hvic, it can take advantage of cmos technology on silicon to obtain the high voltage
Soi高壓集成電路根據頂層硅厚度可分為厚膜和薄膜兩大類。為了滿足一定的擊穿電壓,薄膜soi高壓電路一般採用漂移區線性摻雜技術,但其工藝復雜,且自熱效應嚴重;而厚膜soi高壓集成電路可以通過移植體硅cmos技術來實現高壓,但是由於其硅膜較厚,介質隔離成為厚膜soi高壓集成電路的關鍵技術。
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