等晶粒的 的英文怎麼說

中文拼音 [děngjīnglìde]
等晶粒的 英文
homeocrystalline
  • 等 : Ⅰ量詞1 （等級） class; grade; rank 2 （種; 類） kind; sort; type Ⅱ形容詞（程度或數量上相同） equa...
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 粒 : Ⅰ名 （小圓珠形或小碎塊形物） small particles; grain; granule; pellet Ⅱ量詞（用於粒狀物）
  • 的 : 4次方是 The fourth power of 2 is direction
  1. The influence of the disturbing and anisotropy on dendrite growth has been investigated

    研究了噪聲和各向異性等參數對晶粒形貌的影響。
  2. In one, equiaxed dendrites form and subsequently ripen into more - or - less spheroidal shape, suitable for forming

    一個是先形成由等軸晶粒構成的晶枝體，再熟化形成類似的球狀體。
  3. 4. after continuously heated and isothermally soaked, the equiaxed grain, as the result of the recrystallization, was the necessary texture condition of the semi - solid grain ' s globalization processing

    4 、連續升溫和等溫保溫過程中再結晶形成等軸晶，為半固態晶粒球狀化提供了必西安理工大學碩士學位論文要的組織條件
  4. The globalization course was that the preformed texture recrystallized and became the granular equiaxed grain, when the temperature rose and the holding time prolonged, the granular grain melted at some area and at the liquid - solid interface the grain globalized at the role of the curvature overheated

    過程機制為：擠壓形變組織在加熱過程中首先發生再結晶長大變為顆粒狀等軸晶；隨溫度升高和保溫時間延長，等軸晶發生局部熔化，液固界面的曲率過熱使晶粒外形向球狀轉變。
  5. Ill 2, xi ' an university of technology 2. at the same holding temperature, when the holding time increased, the equal - area - circle diameter trended to uniform, and the distribution of the roundness approached to gaussian distribution

    2 、相同等溫溫度條件下，改變等溫時間，等積圓直徑的分佈隨時間的延長趨向均勻，晶粒球化度接近於正態分佈。
  6. 3. at the same holding time, when the holding temperature changed, the number of the long equal - area - circle diameter grain increased, and the average of the equal - area - circle diameter lengthened, the average of the roundness heightened

    3 、相同保溫時間條件下，改變等溫溫度，等積圓直徑大的晶粒隨溫度的升高而增加，球狀化程度高的晶粒數增多，平均等積圓直徑和平均球化度同時增大。
  7. Abstract : the effect of correction of self - consistent potential on electronic structure in simple cubic nanocrystal particles is calculated by means of the green ' s function method in the tight - binding approximation, taking only the nearest neighbor matrix elements into account. the numerical results show that the electronic energy spectrum is shifted, the chemical potential is not equal to the atomic energy level, the electronic density at each lattice point is changed, and the variation of electronic density at surface lattice point is the largest

    文摘:在緊束縛近似下，只計及最近鄰的矩陣元，採用格林函數計算了自洽勢修正對簡立方納米晶體顆粒的電子結構的影響，發現電子能譜發生了移動，化學勢不等於格點原子能級，各格點的電子密度也發生了變化，其中以表面格點的電子密度變化最大。
  8. But the grain growth, grain semiconduction and grain boundary insulation were influenced by many factors, such as the type and contents of dopants, sintering temperature and so on. therefore, in this thesis the effect of the restore sintering temperature, the oxygenize temperature, the donor and acceptor dopant on the dielectric and varistor properties of devices were studied. with sem, the microstructure of srtio3 - based double function ceramic was analyzed

    而晶粒生長、晶粒半導化和晶界絕緣化受到多種因素的影響，諸如雜質的種類和含量、燒成溫度等，因此本論文研究了還原燒成溫度、中溫氧化溫度、施主和受主摻雜等對srtio _ 3基陶瓷的壓敏和介電性能的影響，並藉助于sem分析對srtio _ 3基雙功能陶瓷的微觀結構進行了分析。
  9. It was concluded that, the structure of ito thin films were influenced by many working parameters such as substrate temperature, oxygenous pressure and substrate and so on. it was indicated by sem spectra of zno thin films that the surface of the sample was leveled off, and the crystals were felsitic

    結果表明，對于ito薄膜，薄膜的光電性能薄膜結構的擇優取向性和與襯底溫度、濺射氧氣壓等工藝參數有很大關系， ito薄膜的sem表明，樣品表面較平整，且晶粒也比較緻密。
  10. Fe3o4 nano - particles, which can be dispersed in nano scale, were prepared by means of chemical co - precipitation method. such influencing factors as the type of precipitant, the feeding mode, the surfactants, the reaction temperature, the curing temperature were surveyed. some properties such as crystal structure, particle size, magnetic properties and iron content were characterized

    深入探討了沉澱劑的種類、加入方式、表面活性劑、反應溫度、熟化溫度等各種因素對產物的粒徑及磁性能的影響，對fe _ 3o _ 4納米粒子進行了晶體結構、粒徑、磁性能、鐵含量等性能的表徵。
  11. For the ceramic materials, the effects of additives such as pbo, b2o3, co2o3, mno2, cr2o3, sb2o3 on the electrical properties of bismuth - free zno - glass varistor were studied. the glass phase formed mainly by pbo and b2o3 during sintering process could decrease the sintering temperature, improve grain uniform growth and inhibit grain second growth. nonlinear property could be improved by properly adding co2o3, mno2, and cr2o3

    對瓷料而言，系統研究了非bi系zno -玻璃料配方體系中pbo 、 b2o3 、 co2o3 、 mno2 、 cr2o3 、 sb2o3等添加劑對壓敏電阻電性能的影響規律，其中， pbo 、 b2o3在燒結過程中形成的玻璃相，可降低燒結溫度，促進晶粒均勻生長，抑制晶粒二次長大， co2o3 、 mno2 、 cr2o3做為非線性添加劑，適量添加可提高樣品的非線性， sb2o3做為改性添加劑，在燒結過程形成的尖晶石相可細化晶粒，抑制晶粒二次生長，改善樣品的綜合電性能。
  12. The quality of buffer layer and thin films was analyzed by afm, xrd, rheed and xps respectively. the effect of the experimental parameters such as carbonization time, working pressure, c source gas flow rate, carbonization temperature, different carbonization gas and substrate on the carbonization process was studied firstly. it was observed that the size of particles was increased with the increase of carbonization time and the rms was opposite, but the trend was reduced while the carbonization time was long enough ; the size of particles was increased with the increase of working pressure too, and choosing a proper working pressure could get a smooth surface ; the size of particles was unobviously changed while the gas flow rate was low, but it was notability increased with the increase of gas flow rate while the gas flow rate was high enough, and a smooth surface could be also obtained by choosing a proper gas flow rate ; with the increase of carbonization temperature, the size of particles was increased, the rms is decreased and a good single - crystalline carbonization layer could be obtained, but a rough surface was formed at a excessive high temperature ; the rms of

    對于碳化工藝，側重研究了碳化時間、反應室氣壓、 c源氣體的流量、碳化溫度以及不同種類的c源氣體、基片取向等因素對碳化層質量的影響，研究結果表明:隨著碳化時間的增長，碳化層的晶粒尺寸隨之變大，表面粗糙度隨之降低，但當碳化到一定時間之後，碳化反應減緩，碳化層的晶粒尺寸以及表面粗糙度的變化幅度變小;碳化層的晶粒尺寸隨反應室氣壓的升高而變大，適中的反應室氣壓可得到表面比較平整的碳化層;在c源氣體的流量相對較小時，碳化層的晶粒尺寸隨氣體流量的變化不明顯，但當氣體流量增大到一定程度時，碳化層的晶粒尺寸隨氣體流量的增大而明顯變大，同時，適中的氣體流量得到的碳化層表面粗糙度較低;碳化溫度較低時，碳化層的晶粒取向不明顯，隨著碳化溫度的升高，碳化層的晶粒尺寸明顯變大，且有微弱的單晶取向出現，但取向較差，同時，適中的碳化溫度可得到表面平整的碳化層;相比于c _ 2h _ 2 ，以ch _ 4作為c源氣體時得到的碳化層表面平整得多;比起si （ 100 ） ，選用si （ 111 ）作為基片生長的碳化層的晶粒取向一致性明顯更好。
  13. The corrosion behavior of nanocrystalline ( nc ) copper bulks with various grain sizes prepared from igc ( inert gas condemsation ) and vacuum annealing in comparison with conventional microcrystalline ( mc ) copper ( as - rolled and electrolytic ) in acid copper sulphate solution and neutral solution containing chlorides under free corrosion conditions and anodic polarizations has been studied using potentiodynamic polarization, potentiometric analysis, cyclic voltammetry and electrochemical impedance spectroscopy. x - ray diffraction was used to estimate the grain size of the annealed nc copper. field emission gun scanning electron microscopy and x - ray energy - dispersive spectroscopy was used to characterize the surface morphology and analyze the surface composition after the polarization and potentiometric test of both nc and mc copper

    本文研究了用igc （惰性氣體蒸發凝聚原位溫壓法）制備並真空退火到不同晶粒尺寸的納米晶銅和微米晶銅（冷軋紫銅、電解銅）在酸性硫酸銅溶液和中性含氯溶液中，在自腐蝕狀態和陽極極化狀態下的腐蝕性能。使用了動電勢極化、電位測定、循環伏安法（ cv ）和電化學阻抗譜（ eis ）等方法。 x -射線衍射（ xrd ）的方法用來估算納米晶銅晶粒尺寸。
  14. It is suitable for medium such as water, gas, heat energy, crystal and powder material etc, especially suitable for medium of easy sedimentation, fouling, crystal, lumber, mixed with foreign impurity, sewage and medium with corrodibility, high scouring and great friction

    適用於水、氣、熱能、漿液、晶粒、粉狀物料等介質，特別是能滿足兩相流溶液工藝流程中易沉澱、結垢、結晶、析出、雜物、異物混雜的介質、污水及腐蝕性、高沖刷性、琢磨性強的特殊需求。
  15. Begin with the comparation of two widely used methods producing the strontium titanate, the oxalate decomposition method shows its advantage hi the microstructure and future performance. the effect of caco3 is studied, and so is the effect of the donor dopant, such as nb2o5, y2o3 and la2o3. the dopant of tio2 is also considered, which involve ti / sr ratio, sintering temperature, oxygen partial pressure, donor dopant, grain growth and future electric performance

    從對比草酸鹽分解法和固相合成法這兩種制備srtio _ 3主晶相的方法開始，在予合成料的制備過程中分析了施主nb _ 2o _ 5 、 y _ 2o _ 3 、 la _ 2o _ 3以及caco _ 3所產生的影響；在tio _ 2摻雜的問題上，綜合考慮了ti / sr比、燒結溫度、氧分壓、施主摻雜、晶粒的微觀生長與成瓷后的元件宏觀電性能等之間的相互關系。
  16. 3. simpler microstructure and mechanical properties classification criterions have been established. if f1 3. 8, the grains must be large grains ; if 0 f1 < 3. 8, the grains must be medium grains ; if f1 < 0, the grains must be fine grains

    由新的表徵變量建立了更簡單明確的顯微結構和力學性能分類準則：當f _ 1 3 . 8 ，則為粗大晶粒組織；當0 f _ 1 3 . 8 ，則為中等晶粒組織；當f _ 1 0 ，則為細晶粒組織。
  17. The equal - grain - area - circle diameter and the roundness were defined to scale the form factor and quantified the degree of the grain ' s globalization. metallographic analysis, xrd, tem and edax were expired to observe the evolution of the microstructure, the changing of the phase and the changing of the component

    定量測試晶粒的等積圓直徑和球化度等形貌參數，比較形變組織的半固態球化效果，採用金相分析、 xrd 、 tem 、 edax等方法觀測組織演變過程特點，並考察第二相及微區成分的變化。
  18. The formation of a new set of strain - free grains within a previously cold - worked material ; normally an annealing heat treatment is necessary

    在冷塑性變形材料的內部生成等軸狀新晶粒的過程叫再結晶，通常發生於再結晶退火熱處理過程中。
  19. It is found that, the sintering process of w - ni - fe - cu alloy was a typical liquid - phase process, which including particle rearrangement stage, dissolving - precipitation stage and solid - phase sintering stage. cu plays an important role in the particle rearrangement stage, while fe can promote the densification by forming ni - fe - w bonding - phase. ni can not only form the bonding - phase, but also enhance the diffusion between the w grains

    研究表明， w - ni - fe - cu合金的液相燒結緻密化經歷了顆粒重排、溶解-析出和固相燒結等三個階段， cu僅在顆粒重排階段起主導作用； fe主要在溶解-析出階段通過形成ni - fe - w三元粘結相來促進w合金的燒結緻密； ni不僅參與形成ni - fe - w三元粘結相，並且在w晶界上通過與w的互擴散促進了固相w晶粒的粘合。
  20. It was confirmed that the first reaction layer of tic with very fine crystal grains is due to the reaction ti + sic - tic + si. this reaction is a reaction - controlled one. however, the other reactions in the second step a re controlled by elements diffusion

    Scs一6sic / ti3ai復合材料的界面反應產物可多達6層，依次為:緊挨著纖維的晶粒細小的tic層、晶粒細小的tissi ;層、等軸晶粒的tic層、 ti3si層、 ti3aic層及ti5si3層。
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