等溫退火 的英文怎麼說

中文拼音 [děngwēntuìhuǒ]
等溫退火 英文
ausannealing
  • 等 : Ⅰ量詞1 （等級） class; grade; rank 2 （種; 類） kind; sort; type Ⅱ形容詞（程度或數量上相同） equa...
  • 溫 : Ⅰ形容詞（不冷不熱） warm; lukewarm; hot; gentle; mild Ⅱ名詞1 （溫度） temperature 2 （瘟） acute ...
  • 退 : 動詞1 （向後移動） retreat; draw back; move back 2 （使向後移動） cause to move back; remove; wit...
  • 火 : fire
  • 退火 : [冶金學] anneal; annealing; back-out
  1. The dependence of oxygen precipitation and induced - defects in heavily as - doped silicon on heat treatment process was studied by annealing and ig process, chemical etching, scanning electron micrograph ( sem ) and transmission electron microscopy ( tem ). a developed ig technique was suggested and the mechanism of the influence of as on oxygen precipitation formation in heavily as - doped silicon was discussed

    本文通過化學腐蝕、光學顯微鏡、掃描電鏡（ sem ） 、透射電境（ tem ）等分析技術，對重摻砷硅單晶在單步退火工藝和內吸雜退火工藝中氧沉澱及誘生缺陷的形態，形核與熱處理溫度、時間的關系等進行了研究。
  2. When the two reactants were simply mixed by crush, they reacted violently and produced carbon spheres with a diameter of 50 - l00nm and sodium chloride ( nacl ) was encapsulated within the outer amorphous carbon shells, which could be confirmed by sem and tem. by annealing at 1400 ? to drive the encapsulated nacl away, hollow carbon spheres were left with a novel mesoporous structure, as presented in hrtem

    實驗中將兩種反應物通過直接擠壓混合后加熱反應，得到的無定型球狀碳材料經tem照片證實直徑為50 - 100納米，而且中間包裹氯化鈉（ nacl ）顆粒； xrd等結果顯示，高溫退火併徹底清除nacl后形成的中空碳球已經部分石墨化。
  3. The corrosion behavior of nanocrystalline ( nc ) copper bulks with various grain sizes prepared from igc ( inert gas condemsation ) and vacuum annealing in comparison with conventional microcrystalline ( mc ) copper ( as - rolled and electrolytic ) in acid copper sulphate solution and neutral solution containing chlorides under free corrosion conditions and anodic polarizations has been studied using potentiodynamic polarization, potentiometric analysis, cyclic voltammetry and electrochemical impedance spectroscopy. x - ray diffraction was used to estimate the grain size of the annealed nc copper. field emission gun scanning electron microscopy and x - ray energy - dispersive spectroscopy was used to characterize the surface morphology and analyze the surface composition after the polarization and potentiometric test of both nc and mc copper

    本文研究了用igc （惰性氣體蒸發凝聚原位溫壓法）制備並真空退火到不同晶粒尺寸的納米晶銅和微米晶銅（冷軋紫銅、電解銅）在酸性硫酸銅溶液和中性含氯溶液中，在自腐蝕狀態和陽極極化狀態下的腐蝕性能。使用了動電勢極化、電位測定、循環伏安法（ cv ）和電化學阻抗譜（ eis ）等方法。 x -射線衍射（ xrd ）的方法用來估算納米晶銅晶粒尺寸。
  4. Etc. heaters mosi2, sic for annealing furnace and single crystal furnace, high purity oxides high purity rear earth oxides, sio2, al2o3, tio2, ti2o3 and ti3o5 etc. for crystal growth and optical coatings. w, mo crucibles and w, mo products for crystal growth, fire - resistant materials and products for heat isolating during crystal growth

    Etc . ，退火爐及單晶爐用發熱體硅化鉬，炭化硅，晶體生長和光學鍍膜用高純氧化物稀土氧化物，二氧化硅，三氧化鋁，二氧化鈦，三氧化二鈦，五氧化三鈦等，生長晶體用鎢鉬坩堝及鎢鉬製品和保溫用各種耐火材料及製品。
  5. The soi is of crystal quality and the box is uniform in thickness, with the interfaces of si / sioa / si smooth and sharp. we have systematically studied the dependence of the formed soi structure on the process parameters, such as ion energy, implantation dosage, substrate temperature, as well as the annealing temperature. with xtem, sims, srp, rbs, ir, raman, aes, xps and other characterization tools, it was found that a dose window at fixed energy for water plasma ion implantation to form high quality soi structure similar to the conventional simox process exists

    本論文還系統地研究了不同注入劑量、注入能量、注入時基底溫度以及退火溫度對所形成soi結構性能的影響，藉助xtem 、 sims 、 srp 、 rbs 、 ie 、 raman 、 aes 、 xps等測試分析手段，我們發現，與傳統注氧隔離（ simox ）技術類似，存在著「劑量窗口」形成優質的soi材料，但在水等離子體離子注入方式中soi材料結構質量對劑量變化更為敏感，隨著注入劑量的增大， soi材料的埋層厚度增大而表層硅厚度減小。
  6. The cmr materials have complex physical properties. some phenomena of the lacamno3 films are discussed, such as the effects of mismatch between the substrates and the films, the variation of the resistance of films under different bias currents. and the effects and improvements are discussed with details after the films are annealed in high temperature and high oxygen pressure

    超巨磁電阻材料有著復雜的物理性質，我們對lacamno _ 3薄膜材料所表現出來的一些現象進行了討論，如應力變化對薄膜性質的影響、不同偏置電流與薄膜電阻變化的關系等，還特別討論了薄膜在高溫、高氧壓環境中退火所帶來的影響以及薄膜性質的改善。
  7. The first one was called one step process or isothermal deposition and annealing process. in this process, the ceo _ 2 layers were formed at high temperature and oxidative atmosphere and then annealed at the same temperature. the relationship between the growth parameters and the textured degree of ceo _ 2 thin film was systematically studied, and the optimal growth parameters were summaried

    採用等溫退火法（或稱「一步法」 ）沉積ceo _ 2 ，即:先在氧化性氣氛下直接反應生長ceo _ 2薄膜，再在與沉積溫度相同的溫度下對薄膜進行退火處理，系統研究了沉積溫度、退火時間、水蒸汽分壓對薄膜c軸織構程度的影響。
  8. The difference among the elasticity modulus of various microstructures is probably the main reason, which caused the experiment results above. under the same experiment conditions, such as sample shape, size, surface roughness, establishment of testing system, pressure on the probe, and thickness of coupling medium, the variety of relative attenuation coefficient ( or ) in different heat treatment samples is measured and compared by measuring the attenuation obtained from the cylindrical surface of column. the result is as following : for 40cr and 38crmoal, a mt < az mq < a s < a p + f ; for gcrlssimn, a mt < a annea < s < a p + f ; and a increased with the increasing of frequency

    在保證試樣形狀、尺寸、表面光潔度、系統參數設置、施加在探頭上的壓力以及耦合層厚度等測試條件一致的情況下，利用棒材圓柱面測衰減系數法，分別測定並比較上述不同熱處理試樣相對衰減系數的變化情況，得到的實驗結果是：對於40cr及38crmoal鋼， _ （低溫回火） （淬火） _ （高溫回火） _ （正火） ；對于gcr15simn鋼， _ （低溫回火） _ （退火） _ （高溫回火） _ （正火） ；且隨著頻率的提高，衰減系數均呈現增加的趨勢。
  9. Experimental results revealed that the carrier mobility increased with increasing of the annealing temperature, in the range of the annealing temperature from 650 ? to 850 ?, which implied that the crystal lattice structure was damaged by ion implantation and restored after annealing. furthermore, the square carrier concentration decreased, and the square resistance of the samples implanted by mn + and c increased with the raising of annealing temperature. these results indicated that the second phase such as mnga, mnas ferromagnets was formed by more mn + ions with increasing of the ( gaas ) annealing temperature, so the mn + ions which can provide carriers decreased

    由實驗結果可以知道在退火溫度為650 850范圍內，樣品的載流子遷移率隨著退火溫度的提高呈上升趨勢，說明雜質元素的注入對樣品造成晶格損傷，但退火對這些損傷具有修復作用；此外，隨著退火溫度的上升，樣品的方塊載流子濃度不斷下降，加c樣品的方塊電阻不斷上升，這都是因為隨著退火溫度的提高，摻入的mn ~ +離子不再提供載流子，而是形成了mnga 、 mnas等磁性第二相。
  10. Annealing could reduce hardness and raise toughness, which could be prone to mechanical machining. quenching and low temperature tempering could raise intensity and hardness of materials, not reduce toughness obviously. quenching on same temperature caused ticp / fe in situ composites having the best integral machine properties

    退火處理使材料的硬度降低，韌性提高，便於機械加工；淬火+低溫回火處理使材料的強度和硬度提高，而韌性無明顯的降低；採用等溫淬火工藝，可使tic _ p fe復合材料具有最好的綜合機械性能。
  11. We also show that preparation methods, working parameters, substrate orientation, the type and amounts of doped ions, and annealing temperature are all exerting influences over egd. this is why different egd values are reported in literatures

    另外我們還討論了e _ g ~ d值的影響因素，如制備方法、工藝參數、基體取向、摻雜離子種類、摻雜離子數量、退火溫度等等，解釋了為什麼不同文獻報道的e _ g ~ d值有所不同。
  12. Prepared technical parameters were optimized by l9 ( 34 ) experiment analysis. a unique method for cleaning and drying of substrate - cleaning used by scour, drying used by infrared light was fished out by large numbers of experiment. chemical mechnism of zno thin film prepared by sol - gel technique was discussed by dta for the first time. by the measurements of sem, xrd and uvs, the thin film was analysed. the result proved that the thin film with strongly preferred orientation of c - axis perpendicular to the substrate surface which surface was homogenous, dense and crackfree was the crystalline phase of hexagonal wurtzite. the thin film was composed of plentiful asteroidal crystal which crystal dimension approximately 10 30nm. the average transmittance of thin film in visible region was above 90 %. the results of measurements else also proved that the thickness of single dip - coating was 75 240nm, this films resistivity was found to be 3. 105 102 3. 96 105 ? cm. the thickness and resistivity of thin film influenced by dope - content, withdrawal speed, pre - heat - treatment, anealing were reseached respectively

    利用xrd 、 sem以及uvs光譜儀等分析方法對薄膜進行了研究，結果顯示，所制備的薄膜為六方纖鋅礦型結構，具有高c軸擇優取向性；表面均勻、緻密，薄膜材料由許多星狀晶粒組成，晶粒尺寸大約為10 - 30nm左右；薄膜可見光透過率平均可達90 % ；對薄膜厚度以及電學性能進行了測定后發現：單次鍍膜厚度約為75 - 240nm ， al ~ （ 3 + ）離子摻雜型氧化鋅薄膜的電阻率在3 . 015 102 - 3 . 96 103 ? cm范圍內；分別研究了摻雜濃度、提拉速度、預燒溫度、退火溫度等工藝參數對薄膜厚度和電阻率的影響。
  13. The size variation of annealed nanoparticles was studied with the treatment temperature. the result shows that, for the size of 11nm zns nanoparticles, they grow up dramatically when the treatment temperature exceeding 600, and have been 3 - 5 um when the treatment temperature increasing to 900

    藉助x射線衍射技術和掃描隧道電鏡等實驗手段，系統研究了zns納米晶經過退火處理后尺寸隨溫度的變化關系，給出了顆粒尺寸隨處理溫度急劇增大的溫度范圍，從能量的角度解釋了退火處理中顆粒長大的原因。
  14. The effects of bath temperature and heat treatment on the morphology, chemical compositions, crystal structures and optical properties have been discussed

    重點研究了沉積溫度和退火處理對cdse薄膜的組成、氧化程度、晶體結構和光吸收性質等方面的影響。
  15. The relationship between sputtering conditions and the depositional speed shows : with working pressure 1. 2 pa, sputtering power 180w, the depositional speed of tio2 thin film is 40nm / h, and increases with the increasing of sputtering power. it can be also founded that the depositional speed is nearly proportional to the working pressure : within the range of 0. 3pa to 1. 6pa, the depositional speed increases linearly with the increase of ar pressure. with the enhancement of the substrate ' s temperature of sputtering or annealing, the resulted thin films show a tendency of decreasing in thickness, and increasing in refractivity

    本實驗是採用磁控濺射方法，在不同的溫度下制備了tio _ 2薄膜，並對薄膜進行了不同溫度和時間的退火處理，通過原子力顯微鏡（ afm ） 、 x射線衍射（ xrd ） 、掃描電鏡（ sem ）等檢測手段對薄膜的表面形貌和組成結構進行了分析，結果如下： （ 1 ）濺射工藝條件與薄膜沉積速度的關系表明：採用1 . 2pa工作氣壓， 180w的射頻功率tio _ 2薄膜的沉積速率為40nm h ，並隨射頻功率的增加而提高，呈近似的線性關系，在0 . 3pa 1 . 6pa氣壓范圍中，氬氣壓強升高沉積速率迅速增加，濺射溫度提高和退火處理能使薄膜的厚度減小和折射率提高。
  16. Our company gives importance to the four essential principles. these are customer s satisfaction, high quality and competitive price and delivering on time

    它廣泛應用在粉末冶金機械工業的高溫熱處理自動線大負載的輸送自動線玻璃器皿退火爐電子工業食品工業等。
  17. Carbon plasma immersion ion implantation ( piii ) into the porous silicon has been studied for the first time, and obtained intense blue light. the effect of annealing temperature on the luminescence has been investigated and results show that the luminescence intensity of sample reaches maximum after annealed at 4000c

    首次研究了碳等離子體注入對多孔硅的改性，得到了強藍光發射，詳細研究了退火溫度對發光強度的影響，發現在400時達到最大值，並探討了相關的機理。
  18. The furnaces can be used for vacuum braze welding of aluminum alloy production, such as aluminum alloy heat exchanger, braze welding of stainless steel, titanium alloy, super - alloy, cemented carbide and nonferrous metals, vacuum temper of high - speed steel, tool and mould steel, bearing steel, stainless steel etc, ageing and annealing of nonferrous metals

    實現的基本工藝高溫合金真空釬焊實例：主要用於不銹鋼鈦合金高溫合金硬質合金有色金屬的釬焊及高速鋼工模具鋼軸承鋼不銹鋼等材料的真空回火，以及有色金屬的時效和退火處理。
  19. In the making process we use hot - forging warm - forging cold extrusion forming and magnetic annealing processes to completely solve the problem of complex form hign precision dimensions difficult manufacturing lower power and so on. what s more, part surface is very smooth with no trimmed margin, continuous flowing metal fiber, high strength, lower noise. forged claw poles obviously increase generator s power and life, and also improve finished product rate of roughness

    在製造過程中採用了熱鍛溫鍛冷擠壓成型及磁性退火等先進生產工藝徹底解決了精鍛「爪極」形狀復雜尺寸精度高製造難度大功率低等問題，且產品表面光潔無飛邊金屬流動纖維連續毛坯強度大噪音低，明顯提高了發電機的功率和壽命，並且提高了毛坯成品率。
  20. In this paper, we employ the plasma enhanced chemical vapor deposition ( pecvd ) to prepare high quality zno thin film at low temperature using a zinc organic source ( zn ( c2h5 ) 2 ) and carbon dioxide ( co2 ) gas mixtures. the effect of the substrate temperature and annealing temperature on the quality of zno thin films was studied in detail

    為了在低溫下制備高質量的氧化鋅薄膜，我們採用金屬有機源和二氧化碳氣源，首次利用等離子體增強化學氣相沉積的技術在低溫下制備了高質量的氧化鋅薄膜，確定了生長高質量氧化鋅薄膜的優化條件；研究了不同的襯底溫度和退火溫度對氧化鋅納米薄膜質量的影響。
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