絕對值器件 的英文怎麼說

中文拼音 [juéduìzhíqìjiàn]
絕對值器件 英文
absolute-value device
  • 絕 : Ⅰ動詞（斷絕） cut off; sever Ⅱ形容詞1 （完全沒有了; 窮盡; 凈盡） exhausted; used up; finished 2 ...
  • 對 : Ⅰ動詞1 （回答） answer; reply 2 （對待; 對付） treat; cope with; counter 3 （朝; 向; 面對） be tr...
  • 器 : 名詞1. （器具） implement; utensil; ware 2. （器官） organ 3. （度量; 才能） capacity; talent 4. （姓氏） a surname
  • 件 : Ⅰ量詞（用於個體事物） piece; article; item Ⅱ名詞1. （指可以一一計算的事物） 2. （文件） letter; correspondence; paper; document
  • 絕對值 : [物理學] [數學] absolute value; absolute; modulus絕對值符號 [自動化] absolute value sign; 絕對值...
  • 絕對 : absolute
  1. An analytical mosfet threshold voltage shift model due to radiation in the low - dose range has been developed for circuit simulations. experimental data in the literature shows that the model predictions are in good agreement. it is simple in functional form and hence computationally efficient. it can be used as a basic circuit simulation tool for analysing mosfet exposed to a nuclear environment up to about 1mrad. in accordance with common believe, radiation induced absolute change of threshold voltage was found to be larger in irradiated pmos devices. however, if the radiation sensitivity is defined in the way we did it, the results indicated nmos rather than pmos devices are more sensitive, especially at low doses. this is important from the standpoint of their possible application in dosimetry

    該模型物理意義明確，參數提取方便，適合於低輻照總劑量條件下的mos器件與電路的模擬。並進一步討論了mosfet的輻照敏感性。結果表明，盡管pmos較之nmos因輻照引起的閾值電壓漂移的絕對量更大，但從mosfet閾值電壓漂移量的擺幅這一角度來看，在低劑量輻照條件下nmos較之pmos顯得對輻照更為敏感。
  2. The plate - tube evaporator, the single back - fin evaporator and the box condenser. after analyzing the physical model and setting up the mathematical model according to the two - phase flow of adiabatic capillary tubes, it also numerically simulates and analyzes the different effects of main parameters on the capillary tube length. based on the heat transfer analysis and counting of thermal insulation layer, the cad system accomplishes the parametric design and drawings of the refrigerator body

    該系統完成了對典型製冷裝置的換熱器部件，如板管式蒸發器、單脊翅片管式蒸發器、箱壁式冷凝器的參數化設計和繪圖；分析了絕熱型毛細管兩相流的物理模型，並建立數學模型，對絕熱型毛細管各主要參數對其長度的影響進行了數值模擬和計算分析；基於對電冰箱箱體絕熱層厚度的傳熱分析和計算，完成了整個箱體的參數化設計和繪圖工作。
  3. In this paper, we begin with actual products designs and then combine the real conditions. on condition that technique conditions requirements were satisfied, by adopting electromagnetic field numerical analysis and experimental research, the electric field distribution inter - phase and to ground of 12kv metalclad withdraw switchgear vacuum circuit breaker is described accurately. the electric field distribution and movement in different conditions are also confirmed

    本文從實際產品設計入手，結合現實情況，在滿足技術條件要求的基礎上，通過採用電磁場的數值模擬分析及實驗研究，準確地描述了12kv配電系統中置櫃真空斷路器相間及對地全場域電場分佈情況，確定了中置櫃在不同情況下的電場分佈、變化情況，通過理論的計算和分析，對產品的絕緣進行了校核與驗證，通過多種方法的比較，進而得到合理的布置結構和達到最佳的絕緣配合，為實際產品的開發和設計提供了理論依據。
  4. Also, exposure to absolute - maximum - rated conditions for extended periods may affect device reliability

    另外，在絕對最大額定值條件下工作時間延長可能影響器件的可靠性。
  5. The absolute maximum ratings section ( figure 2 ) specifies the stress levels that, if exceeded, may cause permanent damage to the device

    絕對最大額定值部分（圖2 ）規定了耐壓等級，如否，就可能對器件造成永久性的損壞。
  6. A gaas threshold voltage automatic measurement system is designed. the sample may be 2 ", 3 " wafer. it can save the data, statistic average value and standard deviation of threshold voltage, map the gaas threshold voltage

    本文建立了一套閾值電壓自動測試系統，可對半絕緣gaas單晶上製作的mesfet器件的閾值電壓進行自動測量，並給出閾值電壓的測量數據，作出閾值電壓的mapping圖，計算閾值電壓的統計平均值、標準偏差等。
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