自摻雜效應 的英文怎麼說

中文拼音 [zìchānzáxiàoyīng]
自摻雜效應 英文
autodoping effect
  • 自 : Ⅰ代詞（自己） self; oneself; one s own Ⅱ副詞（自然;當然） certainly; of course; naturally; willin...
  • 摻 : 摻動詞[書面語] （持; 握） hold
  • 雜 : Ⅰ形容詞（多種多樣的; 混雜的） miscellaneous; varied; sundry; mixed Ⅱ動詞（混合在一起; 攙雜） mix; blend; mingle
  • 效 : Ⅰ名詞（效果; 功用） effect; efficiency; result Ⅱ動詞1 （仿效） imitate; follow the example of 2 ...
  • 應 : 應動詞1 （回答） answer; respond to; echo 2 （滿足要求） comply with; grant 3 （順應; 適應） suit...
  • 摻雜 : 1. mix; mingle2. doping; inclusion; addition; adulteration
  • 效應 : [物理學] effect; action; influence
  1. The discovery of the colossal magnetoresistance ( cmr ) in hole - doped perovskite manganites ra1 - xmxmno3 ( ra is a trivalent rare - earth ion and m is a metal ion ) has attracted much attention since 1989 due to not only its technological applications in magnetic recording and sensor, but also the effect of the strong correlation concerning metal - insulator transition in the field of basic research. since then, several physics models have been suggested to explain the mechanism of cmr. however, the exact mechanism of cmr remains to be done

    自1989年在摻雜鈣鈦礦型錳氧化物ra _ （ 1 - x ） m _ xmno _ 3 （其中m為金屬離子， ra為三價稀土離子）中發現龐磁電阻（ cmr ）以來由於其在磁記錄、磁傳感器等方面潛在的應用前景，以及金屬?絕緣體相變等所涉及的強關聯效應，使該類化合物吸引了物理學界的廣泛注意。
  2. Additional contributions to the refractive index are expected to come from the dopant(6. 8)as well as from the electro-optic effect.

    預料其它對折射率的影響來自摻雜劑以及電光效應。
  3. In the paper we mainly researched space gainp2 / gaas / ge high efficiency tandem cells " making process by home - made low pressure mocvd technology and new solar concentrators. firstly, we presented reseached and development of solar cells in china and foreign countries ; secondly, on the basis of fundamental priciples and theories, we discussed some factors of influcing conversion efficiency of solar cells, and analysed the i - v output feature of two - junction tandem cells ; then the design concept of gainp2 / gaas / ge two - junction tandem cells was discussed, the detailed aspects of gainp2 / gaas / ge tandem cells epitaxy growth by low pressure mocvd was studied, and some questions on epitaxy growth ( such as crystal qualities, interface stress, element interdiffusion, n - and p - type doping et all ) were solved ; after that, the cell fabrication process was described ; finally, we reseached the hot pressing and mould process technology of an arched line - focus fresnel lens made by pmma, designed and fixed new solar concentrators

    本文致力於用自製的低壓mocvd裝置進行cainp _ 2 / gaas / ge空間用高效級聯太陽能電池製作的工藝以及聚光太陽能電池組件的研究。首先，介紹了國內外太陽能電池的研究現狀及應用情況；其次，運用太陽能電池基本原理討論影響電池轉換效率的因素，分析了級聯電池的伏安特性；隨后，討論了cainp _ 2 / gaas / ge雙結級聯電池的結構設計理念，研究了採用低壓mocvd技術生長cainp _ 2 / gaas / ge級聯太陽電池材料的工藝過程，解決了異質材料生長的結晶質量、界面應力、材料互擴散以及材料n 、 p型摻雜等一系列問題；然後總結了級聯電池的后工藝製作；最後，研究了以pmma為材料的菲涅耳線聚焦透鏡的熱壓成型工藝及其模具的加工工藝，設計並安裝完成新型聚光太陽能電池組件。
  4. The influence on the magnetism and the electron spin resonance ( esr ) over a wide range of composition and temperature have been studied systematically. an obvious symmetric esr signal with a lorentzian lineshape in the paramagnetic regime is observed

    本論文邊過選擇磁性離子替代，著眼點在於討論衫雜離子的磁性效應，實驗發現摻雜使樣品的磁結構發生變化，且在低溫時出現磁化強度峰，用摻雜離子自旋旋轉對此進行了解釋。
  5. According to the thickness of the soi film, high voltage ic based on soi material ( soi - hvic ) can be divided into thin - film and thick - film. for thin - film soi - hvic, linear drift region doping profile is adopted to satisfy a certain breakdown - voltage, but this process is too complex and its self - heating effect is obvious ; for thick - film soi - hvic, it can take advantage of cmos technology on silicon to obtain the high voltage

    Soi高壓集成電路根據頂層硅厚度可分為厚膜和薄膜兩大類。為了滿足一定的擊穿電壓，薄膜soi高壓電路一般採用漂移區線性摻雜技術，但其工藝復雜，且自熱效應嚴重;而厚膜soi高壓集成電路可以通過移植體硅cmos技術來實現高壓，但是由於其硅膜較厚，介質隔離成為厚膜soi高壓集成電路的關鍵技術。
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