薄膜透明度 的英文怎麼說

中文拼音 [bómótòumíngdù]
薄膜透明度 英文
film clarity
  • 薄 : 名詞[方言] （浮萍） duckweed
  • 膜 : 名詞1. [生物學] （像薄皮的組織） membrane 2. （像膜的薄皮） film; thin coating
  • 透 : Ⅰ動詞1 （滲透; 穿透） penetrate; pass [seep] through 2 （暗地裡告訴） tell secretly; let out; lea...
  • 明 : Ⅰ形容詞1 （明亮） bright; brilliant; light 2 （明白;清楚） clear; distinct 3 （公開;顯露在外;不隱...
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 薄膜 : thin film; film; diaphragm
  • 透明度 : 1 （透過光線的程度） pellucidity; transparency; transmittance; diaphaneity2 （政治方面的公開程度...
  • 透明 : transparent; vifrification; hyaline; diaphaneity; lucency
  1. Among various fabrication techniques of thin film, the sol - gel process has gained much interest for the preparation of pzt thin film, due to ihe advantages of good homogeneity, easy control of composition, low in - ill i reaving temperature, easy formation of large area thin films pb ( zrxti : - k ) 0 :, ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ). lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate

    Pzt的制備方法有很多，其中溶膠?凝膠（ sol - gel ）方法可以和集成電路（ ic ）光刻工藝相互兼容，處理溫度低，有大面積塗敷性能，能精確地控制組分，無需復雜的真空設備，成本低廉，所以對于集成鐵電薄膜電容的應用這種方法有很廣闊的前景。本文利用sol - gel技術在摻錫的in _ 2o _ 3透明導電薄膜（ ito ）襯底和低阻硅襯底上成功地制備了pzt鐵電薄膜。運用了x射線衍射， sawyer - tower電路和lcr電橋分別對薄膜的晶化溫度，結構和電學性能進行了測試。
  2. The results indicate that ( a ) before heat treatment, with the increasing of substrate temperatures, content of lower valency ( tij + ) decreases, the stoichiometric proportion of o / ti in all samples is about 2 ; the films have amorphous incompact columnar fiber structure, and with the increasing of substrate temperature, the size of columnar fiber increases ; the films have good hyalescence in visible range and great absorbability at the wavelength of 350nm ; optical constants of the films are calculated from the transmittance spectrums in visible range by mathematical analysis of the orders of interference, the results show that the refractive ind

    研究結果表明， （ a ）熱處理前，隨著基片溫度的增加，薄膜中的低價氧化鈦含量逐漸減少，化學計量比趨于o ti = 2 ；薄膜具有非晶態不緻密的柱狀纖維結構，柱狀纖維的尺寸隨基片溫度的升高而增加;薄膜在可見光范圍內透明，在波長為35onzn時嚴重吸收，利用干涉級次法分析了薄膜的光學常數，結果表明，薄膜的折射率隨基片溫度的升高而增加，根據計算結果得到了tioz薄膜在不同基片溫度下的折射率色散曲線。
  3. Under the applied voltage of 2v, the duration of colored process and bleaching process of the semisolid - state smart window was 2s and 1. 5s respectively, which denoted rapid response velocities. researches on the glass / ito / wo3 / linbo3 / niox / au all solid - state smart window were referred to the effect of each film ' s thickness on the device ' s electrochromic properties. through the test of the visible light transmittance of the colored state and bleaching state of the device, it proved good electrochromic capabilities with the dynamic optical density changed between 0. 2 - 0. 5

    並在此基礎上繼續研究了glass ito wo _ 3 linbo _ 3 nio _ x au結構的全固態智能窗器件模型，對于各薄膜層厚度對于器件電致變色性能的影響做了初步的研究，測試了器件可見光范圍內的著色褪色透射光譜，光密度變化量在0 . 2 0 . 5范圍內，表明器件具有良好的電致變色性能。
  4. Zno film is a novel - direct compound semiconductor with wide band gap energy of 3. 37ev and a exciton binding energy 60mev at room temperature. due to its the prerequisite for visible or ultraviolet light emission at room temperature, it has the tremendous potential applications for ultraviolet detectors, leds, lds. zno thin film is used widely and effectively in the fields of surface acoustic wave devices, solar cell, gas sensors, varistors and so on because of its excellent piezoelectrical performance

    室溫下禁帶寬度為3 . 37ev ，激子束縛能為60mev ，具備了室溫下發射紫外光的必要條件，在紫外探測器、 led 、 ld等領域有著巨大的發展潛力； zno薄膜以其優良的壓電性能、透明導電性能等使其在太陽能電池、壓電器件、表面聲波器件、氣敏元件等諸多領域得到廣泛應用。
  5. When the machine is working, the operations of feeding, heating, extruding, filming, forming, cooling, measuring, slitting and rolling can be carried out automatically. air bubble film is also called air bubble sheet, air cushion film, poly - cell sheet or plastic poly - cell. it s widely used as anti - shock material for the package of electronic appliance, industrial products, craftwork and so on

    氣泡膜，亦稱氣墊膜氣珠膜氣泡布氣泡紙氣泡薄膜氣墊薄膜，是採用ldpe低密度聚乙烯樹脂加工而成，是當前普遍使用的唯一透明的一種軟包裝緩沖材料，可製成氣泡袋氣泡牛皮紙信封袋汽車太陽擋隔熱座墊隔熱保溫材料等。
  6. Uniform and compact plzt and sno _ 2 ceramic targets, which diameter were 212mm and 221mm, respectively, had been successfully fabricated. ( 2 ) a rotating magnetic field rf magnetron sputtering system had been designed and set up, which showed high utilization efficiency of target, high films uniformity, and high deposition rate, etc. ( 3 ) the plzt and sno _ 2 thin films were investigated by afm, xrd, sem, and spectral photometer. the optimized processing parameters of preparing these films had been found

    並以此為基礎分別制備了緻密、均勻、平整、直徑為212mm的plzt和221mm的sno _ 2陶瓷濺射靶材; （ 2 ）為克服現有磁控濺射設備的不足，提出了一種新的磁控濺射方案，採用該方案的設備具有:靶材利用率高、鍍膜均勻、成膜速度快等特點; （ 3 ）運用afm 、 xrd 、 sem以及雙光路分光光度計等分析手段對plzt和sno _ 2薄膜的微結構和性能進行研究，找到了制備plzt電光薄膜和sno2透明電極材料的最佳工藝條件。
  7. Cps is a transparent coextruded cast polypropy lene film for lamination with one side heat sealable and the other side treated, it has outstanding seal strength, good cof and can be laminated to other materials such as bopp and bopet

    Cps是一種透明的聚丙稀復合性薄膜，它一面可熱封，另一面電暈處理，它有顯著的熱封強度，和良好的摩擦系數，也可以和其他材料復合如bopp和bopet 。
  8. The processing parameters of preparing plzt electro - optic films were 400 of substrate temperature, 100w of sputtering power, 1 : 6 ratio of oxygen to nitrogen and 650 of annealing. the processing parameters of preparing sno2 film were room temperature of substrate temperature, 200w of sputtering power, 1 : 2 ratio of oxygen to nitrogen and 600 of the annealing temperature

    制備plzt電光薄膜的最佳工藝參數為:襯底溫度400 ，濺射功率100w ，氧氬比為1 : 6 ，退火溫度為650 ;而制備二氧化錫透明電極的最佳工藝參數為:襯底溫度室溫、濺射功率200w 、氧氬比為1 : 2 、退火溫度為600 。
  9. To make a mask for a part of a computer chip, a manufacturer first designs the circuitry pattern on a conveniently large scale and converts it into a pattern of opaque metallic film ( usually chromium ) on a transparent plate ( usually glass or silica )

    要做出電腦晶片一部份的光罩，製造者首先在方便操作的大尺度上設計線路，然後把它轉錄到一片透明板（通常是玻璃或矽石）上不透光的金屬薄膜（通常是鉻） 。
  10. The symmetry properties of the optical coherence with respect to the detuning of the light frequency from resonance show up in specific symmetries of the spectra

    研究表明，透射光譜隨薄膜厚度的增大而展寬，光譜呈現對稱性。
  11. The infrared - transmitting （ irt ） mulches provide the weed control properties of black mulch and are intermediate between black and clear mulches in terms of increasing soil temperature

    紅外線透性薄膜有黑色薄膜那種控制雜草的特性，在增加土壤溫度方面介於黑色與透明薄膜之間。
  12. Its potential and maximal application field is for semiconductor films and optic films that mainly rely on the high - orientation and single crystal diamond films and big area transparent diamond films. but it is widely existent for defects in the process of diamond films growth and also it is difficult to get parameters stability such as temperature etc in wide area, as a result, the diamond films " orientation is changed, and it is very difficult to get the high - orientation and single crystal diamond films and big area transparent diamond films

    金剛石膜潛在的最大應用領域是作為半導體薄膜和光學薄膜，而這個領域的開發在很大程度上依賴于高取向和單晶金剛石薄膜以及大面積透明金剛石膜的獲得，但由於金剛石膜生長過程中缺陷的普遍存在以及大面積范圍內均勻溫度場等參數的難以獲取，從而導致金剛石膜的取向發生改變，使高取向和單晶金剛石薄膜以及大面積透明金剛石膜的獲得十分困難。
  13. The shimadzu uv - 3101 spectrophotometer was employed to get the uv - visible transmission and reflection spectra. both of the absorption coefficient ( a ) and optical band gap ( eg ) were calculated from the transmission and reflection spectra of the films. it was observed that eg decreased with an increase in the deposition pressure

    採用紫外-可見光分光光度計測定了納米- sic薄膜透射光譜和反射光譜，並通過樣品的透射光譜和反射光譜計算了納米- sic薄膜吸收吸收系數和光學帶隙eto實驗結果表明，增大工作氣壓導致納米- sic薄膜的光學帶隙的減小。
  14. The optimized preparation conditions were pre - sintering temperature of 910, sintering temperature of 1100 and keeping temperature duration for 6 hours. for sno _ 2 ceramic target, the optimized preparation conditions were pre - sintering at 1100, sintering at 1500 and keeping temperature duration for 6 hours

    其最佳工藝條件為: 910預燒， 1100燒結並保溫6小時;而制備透明導電薄膜sno _ 2陶瓷靶材的最佳工藝條件為:預燒、燒結溫度分別為1100和1500同時保溫6小時。
分享友人
分享到 Line

分享到臉書