蝕刻液 的英文怎麼說

中文拼音 [shíkèyè]
蝕刻液 英文
etchants
  • 蝕 : Ⅰ動詞1. （損失; 虧耗） lose 2. （腐蝕） erode; corrode Ⅱ名詞（天體現象） eclipse
  • 液 : 名詞（液體） liquid; fluid; juice
  • 蝕刻 : [電學] [冶金學] etch; etching
  1. Abstract : the preparation of cuprous chloride from etching waste liquor of cupric chloride and crude copper powder was studied. the result showed that this method had many advantages, including simple process, easy operation and good quality of product, therefore it had remarkable economic and environmental benefits

    文摘:以氯化銅蝕刻液廢液、粗銅粉等為原料，在常溫下反應制備氯化亞銅，工藝簡單，操作簡便，產品質量好，具有顯著的經濟效益和環境效益。
  2. Provide unique solvent of " directly etching method of chemically forming veined and granular aluminum alloys surface " f

    提供"鋁合金表面化學紋理直接蝕刻的方法"工作液
  3. P - type silicon crystal plates have been adopted in the text, which are formed mask sio2 by heat - oxygenation. and figures are diverted by normal light etching technology

    本文採用p型單晶矽片，由熱氧化形成sio _ 2掩膜層，標準光刻工藝進行圖形轉移，用koh溶液濕法刻蝕製作倒四棱錐腐蝕坑列陣。
  4. The principle, theory, realizing methods for holographic lithography as well as the pattern transfer mechanism among the traditional photomask - hologram mask - resist have been deeply investigated. an experimental system with total inner reflection wavefront conjugation holographic lithography using right angle prism and refractive index matching liquid is designed and built, and the experimental research is carried out

    對全息光刻的原理、理論、實現方法及傳統光掩模?全息掩模?抗蝕劑圖形傳遞機理進行了深入的研究，設計和建立了採用直角棱鏡和折射率匹配液的全內反射波前共軛全息光刻實驗系統，進行了實驗研究。
  5. One company selling hydrochloric acid for etching cement floors reckoned that, because it was in gel form and could legally be washed down the drain, the product was environmentally friendly

    一家銷售蝕刻水泥地鹽酸的公司以為鹽酸為膠液產品，可以被合法地沖進下水道，因此是環保產品。
  6. In order to make integration of theory with practice, a lot of experiments have been done. mask - making technology, photoetching and wet - etching processes have been optimized. the author also presents the application and commercial value of silicon v - groove arrays

    在實踐上，對製作工藝積極探索，提出新的制備硅掩蔽膜的工藝方案，對影響光刻質量的因素深入分析，試驗摸索出適用於v型槽的各向異性濕法腐蝕的腐蝕液配方，獨立優化設計了製作硅v型槽的相關工藝，製作出高質量的硅v型槽。
  7. Compared with the conventional chemical etching, laser assisted wet chemical etching can eliminate the effect of crystal orientation efficiently and fabricate more diversified etched pattern ; compared with the laser assisted gas chemical etching, the required condition for laser wet etching can be realized more easily and the operation can be simplified ; compared with the ion etching, it has advantages of no ion damage to substrate, avoiding over - etching and cost - effective

    半導體的激光誘導液相腐蝕與普通化學腐蝕相比，可以有效地消除晶體取向影響，製作出更加多樣化的腐蝕圖形;與激光誘導氣相腐蝕相比，其工藝條件更加容易實現，操作更加簡單;與干法離子刻蝕相比，對基片無離子損傷，過度腐蝕容易控制，成本低。
  8. In the third section, i. e. chapter five, the normal raman spectra of nil2, cul2, pdl2 powder are studied under the excitation of laser with the wavelength of 632. 8nm and aqueous silver colloid is prepared by pulsed laser ablation, from which the surface enhanced raman spectra of the three compounds are obtained. after preliminary assignment, the identical and different features of vibration of the compounds due to the different central metal atoms are analyzed

    第三部分，即論文的第五章，我們以632 . 8nln為激發波長研究了nilz 、 culz和pdl :三種新型金屬有機化合物粉末的正常拉曼光譜，並且以脈沖激光刻蝕法制備了水銀膠，以其為襯底研究了三種化合物溶液在其上的表面增強拉曼光譜，通過對其拉曼光譜進行了初步指認，了解由於中心原子的不同，三種金屬有機化合物分子振動的相同和區別。
  9. This paper discusses the surface etching of polyester thread through application of plasma and alkali deweighting to enhance the size adhesion to polyester thread and improve the abrasion - resistance of the sized polyester thread

    摘要探索了應用堿減量、低溫等離子體處理方法對滌綸股線表面進行刻蝕處理，以改善上漿前滌綸表面界面，增強漿液對滌綸股線的黏附性，提高上漿后滌綸股線的耐磨性的研究。
  10. Process parameters related to the film quality are discussed ; relations are found between the etching rate and different process parameters when sio2 and cr thin films are etched in an inductively coupled plaslma ( icp ) etching equipment ; the tmah eroding solution ’ s ph value under different temperatures and concentrations are studied, since the etching process can be controlled by the ph value

    3 .初步研究了利用pecvd淀積si3n4薄膜的工藝，討論了影響薄膜質量的相關工藝參數;初步研究了用icp刻蝕sio2和cr的相關工藝;通過分析不同濃度tmah腐蝕液在不同溫度下其ph值的變化，研究了以溶液ph值作為腐蝕溶液的控制參數。
  11. Standard methods of analysis of sulfochromate etch solution used in surface preparation of aluminum

    鋁表面準備用硫代鉻酸鹽蝕刻溶液分析的標準試驗方法
  12. Hf - based solution is widely used for cleaning and wet etching sio2 in pre - diffusion clean process

    摘要以氟化氫為基礎的溶液被廣泛地用在擴散前清洗工藝中的二氧化矽清洗與蝕刻中。
  13. The n - type ps ( 80 ? cm - 100 ? cm ) had been immersed in the mixture of amine ( ( c2h5 ) 3n : c2h4 ( nh2 ) 2 = 3 : 2 ) for twenty minutes, then carried on rapid thermal oxidation ( rto ) through a quartz tube and oxidized in a floating oxygen ambience ( 0. 5 l / min ) at the temperature 400 for 30 s

    N型（ 80 - 100 ? cm ）矽片刻蝕后的多孔硅在胺液中浸泡20min ，然後在氧化爐中進行熱退火，退火溫度在400時， o _ 2流量為0 . 5l / min的條件下退火30秒，在紫外燈照射下，所得ps發藍白光。
  14. Dry etching of molybdenum film in fabrication of thin film transistor liquid crystal display

    液晶陣列工藝中金屬鉬的干法刻蝕研究
  15. The oxidizing parameters of the anodization in the following experiments were preferred on the basis of measuring the dependence of pl properties ( peak position, and max intensity, etc. ) on anodization conditions, such as the anodizing current density, the time of the anodization, the concentration of the solution ( mainly of hf ), and on the doping level of the substrate

    刻蝕時間、刻蝕液配比及襯底電阻率對pl發光強度、峰值波長等性質的影響。在此基礎上優化出制備多孔硅的具體參數。對不摻sb與摻sb的snci 。
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