表面位錯 的英文怎麼說

中文拼音 [biǎomiànwèicuò]
表面位錯 英文
surface dislocation
  • 表 : Ⅰ名詞1 （外面;外表） outside; surface; external 2 （中表親戚） the relationship between the child...
  • 面 : Ⅰ名詞1 （頭的前部; 臉） face 2 （物體的表面） surface; top 3 （外露的一層或正面） outside; the ri...
  • 位 : Ⅰ名詞1 （所在或所佔的地方） place; location 2 （職位; 地位） position; post; status 3 （特指皇帝...
  • 錯 : Ⅰ形容詞1 （錯誤; 不正確） wrong; mistaken; erroneous 2 （用於否定: 壞; 差） bad; poor 3 （交叉; ...
  • 表面 : surface; superficies; boundary; face; rind; sheet; skin; outside; appearance
  1. Z. zhang and w. geng, " direct observation of misfit dislocations at the interface between a decagonal quasicrystal and its epitaxial crystalline layers ", phil. mag. lett., 65 ( 1992 ) 211 - 218

    「十面體準晶與其表面晶體之間界面失配位錯的直接觀察」 ， ， （英國）
  2. Energy correction factor of semicircular dislocation loop at surface

    表面半位錯環能量修正系數的計算
  3. On the portion where slippage is small or nonexistent, surface offsets should be a maximum and of the order of the throw at depth.

    在斷層中滑動很小或不存在有滑動的部位，表面錯距可能最大並和深部差動屬同一量級。
  4. Thirdly, the paper discusses the driver of the peripheral equipment, how to port the uc / os - n and uclinux, h. 323 protocol and the application of the system in the digital speech classroom. also some software and hardware measure are adopted to enhance the system stability. at last, the shortcoming and the something to be improved are given. dsp can be used to realize real - time speech coding algorithm, and after porting ( ac / os - n, arm can manage the keyboard, the lcd and the ethernet peripheral etc. then the embedded network system with specific purpose can be used in others fields, such as pda, set of top, web tv, ect

    在實際設計實現中，為提高系統軟、硬體整體穩定性和可靠性，使用了以下幾種方法： （ 1 ）低電壓復位、抗電源抖動能力、增加時鐘監測電路、抗電磁干擾能力、散熱等技術； （ 2 ）多層pcb設計，線路板結構緊湊，電源部分採用數字5v 、 3 . 3v 、 3v 、 1 . 8v和模擬5v多電源供電； （ 3 ）選用表面貼和bga封裝的器件； （ 4 ）按照軟體工程的要求進行系統分析，規劃系統框圖、流程分析、模塊劃分，減小了不同模塊的相關性，從而最大限度避免了錯誤的發生。
  5. It is found that " phase produces coplanar slip and reduces the number of movable slip systems because its particles are cut by moving dislocations in deforming process, for its large critical size of cut - bypass, accordingly its strengthening contribution is anisotropic. and strengthening contribution of t1 phase is also anisotropic because it distributes on the four { 111 } slip planes while its critical size is small

    研究表明，相由於顆粒的切過-繞過臨界尺寸較大，在變形過程中被運動位錯切過，由此產生共面滑移，減小可動滑移系數目，所以其強化具有各向異性； t _ 1相的臨界尺寸較小，但分佈於四個{ 111 }滑移面上，故其強化也具有各向異性。
  6. A physical model for describing the fault movement along plate boundary is proposed, i. e., the crust movement along plate boundary equals to the relative rigid plate motion plus negative dislocation distributions on the fault planes

    提出了一種描述板塊邊界斷層運動的力學模型，即將板塊邊界的地殼運動表述為板塊的相對剛體運動加邊界斷層面上的負位錯分佈。
  7. Double deck compounding fusing machine belt : with static - resistance varnished cloth inside and tearing - resistance fiberglass cloth outside, the compounded belt has a great improvement on its intensity, long using life, well balanced thickness, excellent deflecting preventing capacity, smooth surface, it ' s better for super thin lining

    雙層復合粘合機帶：雙層復合帶內層用抗靜電漆布，外層用抗撕纖維布，整體錯位復合而成.強度大幅度提高，使用時間長，整體厚度均勻，防偏性能好，表面光滑細膩，加工超薄粘合襯更佳。
  8. And considerable work has been done hi the growth behaviour in the tetrachloride solution concluding studies of crystal growth and growth kinetics. a crystal of dimensions 20mm x 20mm x 1mm was produced hi the tetrachloride solution by lowing temperature. and bcf spiral growth mechanism for the surface diffusion model was analyzed using the kinetic data

    本文以苯為溶劑溶液降溫法培養出了60mm 40mm 3mm大尺寸hhm單晶；另外探討了hhm在四氯化碳溶液中的生長行為，溶液降溫法培養出了20mm 20mm 1mm的較大尺寸單晶，並用動態循環體視顯微鏡觀察法測定了其在不同的過飽和下主要顯露晶面的法向生長速率，在較大過飽和度范圍內考察了其bcf表面擴散螺位錯生長機制。
  9. It shows that at the stress concentration zone, changes of mfl were relatively weak with slight deformation of the specimens. with the deforming to plastic and further the changing of mfl exhibits more distinct, and when necking emerging a very intensive change takes place. it is indicated that magnetic memory effect is related to the microstructure of the material

    經分析認為，磁記憶信號的這種變化與材料內部微觀組織的狀態有關，試件變形很小時，磁彈性效應對試件表面泄漏磁場的變化起主要作用;試件變形較大時，其表面泄漏磁場的變化主要受塑性變形區內位錯聚集產生的微缺陷的影響。
  10. In the theoretical simulation on the behavior of single helium atom in aluminum, the varieties of energy data including the formation, migration, binding, and dissociation energies for single helium atom at the interstitial, vacancy, grain boundary, and dislocation sites in aluminum lattice were calculated, based on the density functional theories, general gradient approximation and pseudopotential plane wave method. results showed that the most fittable sites for containing helium atoms inside the cell are vacancies. but in the view of the whole lattice, grain boundaries are the best

    計算結果表明，晶內he原子擇優佔位區是空位，而在整個晶體范圍，最有利於容納he原子的區域是晶界，位錯容納he原子的能力次於晶界和空位；在fcc -鋁的間隙位中， he原子優先充填四面體間隙位；晶內間隙he原子是可動的，通過間隙he原子的運動，可在晶內聚集，或被空位、晶界、位錯等缺陷束縛。
  11. Refer to 6. 2, to check up whether the samples have fog, paint, or other filth at the inside surface, whether the glass and glue bar moved disorder

    3按照6 . 2觀察試樣的內表面有無霧狀、油狀或其他污物，玻璃是否有明顯錯位、膠條有無蠕變。
  12. 2 ultraviolet radiation irradiate for 168 hours, move the samples out and put them in the condition of 23 2 for 1 week, then clean the glass surface

    3按照6 . 2觀察試樣的內表面有無霧狀、油狀或其他污物，玻璃是否有明顯錯位、膠條有無蠕變。
  13. _ the phenomenon of saturation or " lock up " when all of the grains have transformed, is described in a rattier simple form through domain volume fractions by the proposed model, in which domain switching in ferro - electrics is analogous to that of dislocation movement on crystal slip planes in metals

    ? ?依據晶體塑性理論，將鐵電材料中的電疇翻轉類比于晶體位錯滑移面上的滑移系，定義鐵電材料中相應的電疇反轉系；採用電疇的體積分數表述電疇翻轉的變化量，得到了電疇翻轉的飽和特性的簡單描述。
  14. The profound question existing in the current schooling in china is the overlook to the individual life, and the reform on schooling shows the characteristics of segregation and superficiality the statu quo that reflects the great dislocation between value - direction and transition challenges us to have a theoretical study on value - direction in schooling in china

    當代中國現有學校教育的深層次問題正是在於對個體生命的忽視，而現有的學校教育改革又體現出分散和流於表面的特徵。這種現狀體現出價值取向與時代轉型間的巨大錯位，迫切需要進行認真的理論研究，以合理地重建當代中國學校教育的價值取向。
  15. There are 4 cysteins in the protein hbfgf, cysteins 78 and 96 are localized on the surface of hbfgf, whereas cystein 34 is completely buried and cystein 101 is partly buried within the folded peptide chain. so the cys78 and cys96 are especially prone to intramolecular disulphide - bond formation. we converted these two cysteins into serines

    同時對於155個氨基酸的hbfgf來說，其34 、 78 、 96和101位的四個半胱氨酸的巰基有形成二硫鍵的可能，是造成二聚體或多聚體的主要原因，其中cys34隱藏在分子內部， cys101部分包埋在分子中； cys78和cys96暴露在蛋白質的表面，很容易因cys78和cys96的游離巰基氧化，在不同的分子間形成錯誤的二硫鍵。
  16. Dislocation distribution function of the edges of an axially symmetric crack subjected to unit - step loads

    軸對稱裂紋表面受階躍載荷的位錯分佈函數
  17. It is shown that the interfacial crack has a significant effect on the equilibrium position of the edge dislocation near circular interface. the results also exhibit a strong dependency different between the shear modulus and poisson ' s ratios of the matrix and the inclusion

    刃型位錯與含界面裂紋的夾雜干涉效應表明：當位錯接近界面時，裂紋對位錯平衡位置有很大的影響；平衡位置對兩種材料的彈性性質也有很大依賴性。
  18. The disfigurements of the traditional electric power supervisory system are concentrically embodied in the imperfect law and regulation system ; shortcomings on the off side, or vacant, or misplaced function of the electric power and the unadvanced way of supervision badly restrict the rapid development of electric power industry, which causes production and management of the electric power enterprise be in low efficiency and the loss of consumers ’ welfare.

    原有電力監管制度的缺陷依然存在，集中表現在法規體系不健全、電力監管職能越位、缺位、錯位以及監管方式落後等方面，嚴重製約著電力產業的快速發展，造成電力企業生產經營效率低下以及消費者福利的損失，這也構成了我國當前電力產業監管制度改革的內在動因。
  19. There exists a strong correlation between initial surface morphology prior to ht growth and ht gan growth mechanism and eventual threading dislocation density in epilayers

    發現高溫生長前樣品的表面狀態對隨後生長的gan生長機制及最終外延層中的位錯密度有很大影響。
  20. As a result, analysis and discussion show that the influence of interfacial crack or rigid line inclusion on the interaction between screw dislocation and inhomogeneity is significant

    分析結果表明，界面裂紋和剛性線夾雜對螺型位錯與夾雜的干涉作用具有強烈的擾動效應。
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