表面晶核 的英文怎麼說

中文拼音 [biǎomiànjīnghé]
表面晶核 英文
surface nucleus
  • 表 : Ⅰ名詞1 （外面;外表） outside; surface; external 2 （中表親戚） the relationship between the child...
  • 面 : Ⅰ名詞1 （頭的前部; 臉） face 2 （物體的表面） surface; top 3 （外露的一層或正面） outside; the ri...
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 核 : 核構詞成分。
  • 表面 : surface; superficies; boundary; face; rind; sheet; skin; outside; appearance
  1. When ph value < 0. 5, faster deposition rate, faster growth rate of crystallizing nucleus, which causes bigger crystalline granularity and bad surface quality of the deposits such as crassitude or darkling

    Ph 0 . 5時，沉積速度過快，晶核成長速度快，晶粒粒度較大，鍍層表面粗糙、發黑，表面質量差。
  2. For electrodeposition by dc methods, the metals deposite uninterrupted and the particles were also embeded uninterrupted into the coatings ; for electrodeposition by pc method, the particles with biggish volume were desorbed from the coatings and returned to the electrolyte again owing to the presence of pulse interval ; for electrodeposition by prc method, the particles carried positive charges are much more easy to desorb from the coatings owing to the effecf of reverse pulse current combined with pulse interval, in addition, the reverse pulse current also could dissovle the metals, further accelerates the desorption of particles, thus the particles size embeded in the coatings by prc method is the least

    直流電沉積時，基質金屬的沉積連續進行，粒子在電極表面不間斷嵌入鍍層;單脈沖電沉積由於脈沖間歇的存在使得具有較大體積的粒子會脫附，重新回到溶液中;採用周期換向脈沖時，反向脈沖電流使表面荷正電的較大的粒子更易從電極表面脫附，同時，反向脈沖電流對基質金屬的溶解作用，也會促進粒子的脫附，因此鍍層中復合粒子尺寸最小。隨著鍍層中粒子復合量的增加，三種鍍層的晶粒都明顯細化，說明al _ 2o _ 3的存在阻止了晶粒的長大，提高了電沉積過程中晶核的形成速率。
  3. When sn2 + concentration in the bath is lower, sn2 + activity is not enough causes slow deposition rate and slow growth rate of crystallizing nucleus, so crystalline granularity deposited is smaller ; when sn2 + concentration in the bath is higher, the dispersive ability of the bath decreases and the surface quality of the deposits sets worse

    鍍液中sn ~ （ 2 + ）濃度較低時，離子活度不夠，沉積速度慢，晶核成長速度慢，使沉積的晶粒粒度較小； sn ~ （ 2 + ）濃度過高，鍍液分散能力降低，使鍍層的表面質量下降。
  4. According to the i - t curves of potential step, it was revealed that electrocrystallization of ni - w - b alloy on glassy carbon followed the mechanism of instantaneous nucleation and three dimensional growth with diffusion controlled. the crystal nucleus number on the surface of electrode raised by the increase of over potential

    根據電位階躍的i t曲線分析得知，在玻摘要碳電極上ni wb合金電結晶過程遵從擴散控制瞬時成核三維成長模式進行，且隨著過電位的增加，電極表面上晶核數增多。
  5. ( 4 ) preliminary investigation of the mechanism of electroless nickel on silicon showed that the catalysis of. silicon surface was acquired by the oxidation of silicon that prompts the deposition of nickel

    （ 4 ）對單晶硅表面化學鍍鎳的機理進行了初步的探討，結果表明硅表面的化學鍍催化活性可能是由硅的氧化反應促使鎳離子沉積成鎳核所形成的。
  6. With the thermodynamic theories and techniques, it is relatively easy to determine the phase equilibrium data with enough accuracy, however there still exist much more difficulties in crystallization kinetics study even for a simple binary system. that is the reason that nucleation and crystal growth rate are generally represented in form of the empirical expressions. the crystallization kinetic is important for crystallizer design, process control and optimization, and it is strongly depended upon the accurate characterization of process information concerning with multiphase flows and the further disclose of its mechanisms with suitable mathematical models

    熱力學理論和方法已足以獲得準確的相平衡關系；然而即使對于簡單的二元物系的結晶過程，晶核形成和晶體生長動力學的研究仍面臨許多困難，通常採用經驗模型表述，而動力學參數的準確性和可靠性是結晶器放大設計、過程式控制制與優化的關鍵，因此多相流信息的準確表徵、結晶機理的進一步揭示及建立起與之相適應的數學模型有著十分重要的學術研究和實際應用價值。
  7. By means of sem, tem, laser scattered particle analyzer, etc., the formation mechanism of ultrafine sio2 particle was studied. it was found that at the initial stage, the sio2 particle consisted of some minicrystal, but after the initial stage the sio2 particle was formed by some soluble aggregated substance growing on the surface of the early particle

    運用掃描電鏡、透射電鏡、激光粒度分析儀等檢測手段，探討了體系中超細二氧化硅顆粒的形成機理和過程，指出超細二氧化硅粒子前期是由體系中的微晶核組成，中後期則由體系中的可溶性縮合物在其表面生長而成。
  8. The key stage of fabricating gene chip is pretreatment of glass surface including the processes of nh3h2o treatment, aminosilane treatment and aldehyde treatment. the pretreatment can grow active group that can bind probe effectively on the surface of glass slide. as a result, the actively treated glass slide can suit for fabricating in - situ synthesis high density gene chips

    基因晶元制備技術的關鍵步驟是玻片表面預處理，即對玻片表面進行羥基化、氨基化和醛基化處理，使表面生長的活性基團能有效固定寡核苷酸探針，以滿足原位合成高密度基因晶元對玻片的要求。
  9. By increasing the h2 dilution ratio, it is found that atomic hydrogen can selectively etch amorphous phase and stabilize crystalline phase. from the study on the distance from substrate to catalyzer, choosing a proper distance can ensure the gas fully decomposed, while a relatively low substrate temperature can cause the nanocrystalline particles to lose mobility and keep their sizes. the pre - carbonization process can enhance the nucleation density and make the growth of high quality nanocrystalline p - sic films much easier

    實驗結果表明：隨著工作氣壓的減小，薄膜的晶粒尺寸有所減小；通過提高氫氣稀釋度，利用原子氫在成膜過程中起的刻蝕作用，可以穩定結晶相併去除雜相；選擇適當的熱絲距離能保證反應氣體充分分解，又使襯底具有較高的過冷度，是形成納米薄膜的重要條件；採用分步碳化法可以提高形核密度，有利於獲得高質量的納米- sic薄膜；襯底施加負偏壓可以明顯提高襯底表面的基團的活性，因負偏壓產生的離子轟擊還能造成高的表面缺陷密度，形成更多的形核位置。
  10. Abstract : based on the ahievement of epitaxial growth in several perovskite oxide films, we discuss the importance of substrate temperature ( ts ) and substrate material in the epitaxial growth of perovskite oxide thin films. influences of ts on growth orientation and epitaxial threshold temperature were observed. the results indicate that during the growth of the oxide films the phase formation and growth dynamics should be taken into consideration. the threshold temperature for epitaxial growth depends on the substrate materials. this demonstrates the influence of substrate material on the initial nucleation and epitaxial growth

    文摘:在成功地外延生長超導、鐵電、鐵磁等多種性質的鈣鈦礦結構氧化物薄膜的基礎上，討論影響氧化物薄膜外延生長的一些因素.考慮到相形成和薄膜生長動力學，在利用脈沖激光淀積法外延生長氧化物薄膜中襯底溫度是十分重要的工藝參數.襯底溫度對成相和生長薄膜的取向都有影響.考慮到薄膜是首先在襯底表面成核、成相併生長.因此襯底材料晶格的影響是不容忽視的.觀察到襯底材料對薄膜外延生長溫度的影響.在適當的工藝條件下，利用低溫三步法工藝制備得到有很強織構的外延薄膜.這突出表明界面層的相互作用對鈣鈦礦結構薄膜的取向有著相當大的影響
  11. The results indicate that phosphate film forms at first at the boundaries between ferrite and graphite

    結果表明，磷化膜晶核首先在鐵素體石墨界面等處形成，是一個不均勻形核過程。
  12. With plating time going on, the nano - polycrystal gathering grows in two dimensions, and the new nano - polycrystal layer appears simultaneously on the formerly formed nano - polycrystal surface. because the boundary and defect densities in quenched and tempered 45 steel is higher than those in annealed steel, the nano - polycrystal gatherings formed at its surface at the beginning of electro - deposition are more concentrated, and then their size is smaller. the microstructure of the ni - p alloy coating has closed relation with its phosphorus content with the increase of phosphorus content, the microstructure of coating turns from nano - crystalline to the amorphous

    隨著施鍍時間的延長，納米晶聚晶體在橫向二維生長的同時，在納米晶聚晶體的表面上也進行著三維方向的新的一層聚晶體的生長；在調質態45鋼表面，由於其具有比較高的晶界和缺陷密度，因此在沉積初期，納米晶聚晶體的成核密度也較大，從而在二維方向聚晶體的尺度較小，鍍層沉積初期表現為緻密細小的鱗片狀組織。
  13. On the surface of annealed 45 steel, as the pearlite in it contains cementite phase and has high crystal boundary density, the nucleation and growth of deposits prefer to occur at the pearlite at the beginning during depositioa the coating exists in form of nano - polycrystal layers composed by gathering of nano - sized crystals

    在退火態45鋼表面，由於珠光體組織中含有滲碳體相且具有比較高的晶界密度，因而在沉積初期鍍層優先在此處形核和生長；鍍層在基體表面是以納米尺度的晶粒聚集在一起形成的聚晶體形式存在的。
  14. The forming - nucleus drive power could form numerous little crystal nucleus under natural melting temperature. the formation of tic particles in the melt could be divided into two phases which was forming - nucleus and growth. the forming mechanism of tic was : melting ti first surrounded c, then ti melting in the alloy and c formed a complicated reaction mesosphere on the carbon surface

    根據熱力學及動力學分析，認為在碳顆粒界面處tic的形核率很高，形核驅動力足以在正常的熔煉溫度下形成眾多的小晶核；熔體中tic顆粒的合成可分為形核與長大兩個階段，其形核機制為：首先活性ti原子包圍c ，溶入合金中的ti與c在碳表面形成一復雜反應中間層，隨著反應進行， ti和c顆粒不斷減少，生成的tic不斷彌散分佈於熔體中；其長大過程伴隨著tic顆粒的相互堆砌、聚集和形態規則化。
  15. Blend in molten state make hdpe crystals small, crystallinity large, quantity of cb particle benefit to conductivity decreasing ; in solid state cb aggregate is sheltered with a insulate hdpe film, also cb structure will be broken down during blend ; all of these will make conductivity bad. but processing alds can lower this effect obviously. 3. the effect of crosslink is restricting the movement of molten polymer molecules

    為此筆者認為固相混合使hdpe晶粒尺寸變小，結晶度增大，使得異相成核的晶粒增多，參與導電的炭黑粒子數量減少：熔混卻使炭黑粒子表面被覆一層絕緣膜：這都將導致材料的導電性明顯變差，同時兩種混合還會造成炭黑結構的破壞，皆使得材料的導電性明顯變差。
  16. When subjected to such process, the steel surface will be covered with numerous fine manganese - phosphate crystals so that the crystal nucleus necessary for manganese - based phosphorizing increases greatly in number. this may not only accelerate phosphorization and properly lower the temperature of phosphorization, but also prevent big - size crystals from being generated. as a result, the resulting phosphate has improved fineness and evenness

    鋼鐵經它處理后，會在其表面覆蓋上許多極細小的錳磷酸鹽結晶，使錳系磷化所需晶核數目大為增加，以而加速磷化反應速度，並能適當降低磷化溫度，還可以阻止粗大結晶的生成，因此形成的磷化膜更加均勻細致。
  17. To improve the performance of assays on the oligonucleotide microarray, the factors that influence the hybridization effects such as surface chemistry, probe size, spacer length, hybridization conditions etc were intensely studied and optimized

    為改善寡核苷酸晶元的分析性能，對影響晶元雜交結果的因素，如片基表面的化學處理、探針的長度、間隔臂的長度、雜交條件等，進行了深入的研究和優化。
  18. Portable instruments are those which are used in industrial environment to view and analysis real - time signals detected from running machines and provide operators with correlative information about the condition of the machines

    在這其中，操作系統、晶元、總線、介面技術成為儀器儀表的內核，嵌入式系統成為技術的代表，並由此形成了儀器儀表行業發展的趨勢。
  19. It was the first time that the silica nanoparticles was coated with gd2o3 : eu rare - earth oxides, then the core - shell structure compound particles were obtained. the characterizations showed that the thickness of uniform coating is in 10 - 20nm ; the silica core is linked with the gd2o3 : eu shell by chemical bond si - o - gd ; because of the size effects and interface effects of nano - crystal coating, the diffraction and emission peaks become broadened. and at the same time, the transfer temperature of silica from amorphous to crystal is decreased

    首次在納米sio2表面包覆一層gd2o3 : eu稀土復合氧化物，得到了核-殼結構的復合顆粒，表徵結果表明，均勻包覆層的厚度為10 - 20nm ； sio2核和gd2o3 : eu殼層物質之間通過化學鍵si - o - gd鍵的作用結合在一起；由於包覆層納米晶的尺寸效應和界面效應使xrd衍射峰和熒光光譜發射峰出現了寬化現象。
  20. Tb doped pt thin films with highly ( 100 ) orientation were prepared. rapid thermal annealing process was used to supply enough energy for the movement of the atoms. so perovskite phase began to form at ( 100 ) orientation which had the lowest surface energy

    研究發現， pt / tb薄膜系統為非均相成核，利用快速熱處理工藝可控制原子以高能量遷移，使鈣鈦礦結構晶體以表面能最低的（ 100 ）晶面在薄膜生長方向上結晶生長， pt / tb薄膜出現了（ 100 ）晶浙江大學碩士學位論文面的擇優取向。
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