表面漏電流 的英文怎麼說

中文拼音 [biǎomiànlóudiànliú]
表面漏電流 英文
tracking current
  • 表 : Ⅰ名詞1 （外面;外表） outside; surface; external 2 （中表親戚） the relationship between the child...
  • 面 : Ⅰ名詞1 （頭的前部; 臉） face 2 （物體的表面） surface; top 3 （外露的一層或正面） outside; the ri...
  • 漏 : Ⅰ動詞1 （從孔或縫中滴下、透出或掉出） leak; drip 2 （泄漏） divulge; disclose; leak 3 （遺漏） le...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 流 : Ⅰ動1 （液體移動; 流動） flow 2 （移動不定） drift; move; wander 3 （流傳; 傳播） spread 4 （向壞...
  • 表面 : surface; superficies; boundary; face; rind; sheet; skin; outside; appearance
  • 電流 : current; galvanic current; electric current; electricity; current flow電流保護裝置 current protec...
  1. The design and analysis of vertical pnp transistor was accomplished through the relationship between carriers lifetime of epitaxy layer and current gain, rate of surface combination and leakage current, carriers lifetime of epitaxy layer and switch speed

    從外延層載流子壽命與晶體管放大倍數，表面復合率與漏電流，以及外延層載流子壽命與晶體管開關速度等方面對于輸出級縱向pnp管進行了較為詳細的設計與分析，達到了電路中對輸出級縱向pnp管主要參數指標的要求。
  2. Electrical field stress at the icicle tips is even stronger. at these areas, if the electric field across air gaps is high enough, corona discharges are initiated. this can lead to the development of local arcs across the air gaps causing a substantial increase in leakage current and a concomitant melting of ice

    空氣間隙的存在使覆冰絕緣子表面的電場分佈發生了明顯畸變，間隙上承受了非常高的電壓，這使得冰凌尖端的電場變得相當強，一旦電場達到了電暈的起始電場，局部放電就在這一區域發生，進而產生局部電弧並逐漸發展成整串的閃絡，泄漏電流迅速增大，同時伴隨著冰的融化。
  3. Compared to other commonly referenced high - k materials, hfo2 is known for its stability on silicon and process compatibility. the fabrication and electrical properties of hfo2 and hfoxny gate are carefully studied. with the study on hfo2. we can receive a few significative conclusion : 1

    結果表明，與傳統的hf清洗的si表面相比， nh _ 4f清洗的si表面與hfo _ 2具有更好的熱力學穩定性，因而可獲得更低的eot和柵泄漏電流密度； 3 ）研究了濺射氣氛和退火工藝對hfo _ 2柵介質薄膜性質的影響。
  4. Test results indicated : with the hoist of altitude, the increase of ice amount and the rise of pollutant, the average flashover voltage reduced. the character exponent generally depends on the insulator profile, ice amount, ice state and pollution severity etc. by means of a high - speed camera, a data acquisition system and high voltage test facilities, a series of the flashover processes on ice surfaces were record. the experimental results form this study and the subsequent theoretical analyses suggested : the thermal ionization of the air in front of an arc root resulted in arc movement ; the electrostatic force had an auxiliary effect of impelling arc propagation ; the electrical

    通過對攝像機、數據採集系統及高壓試驗裝置記錄覆冰絕緣子表面閃絡電弧的發展過程的試驗結果進行理論分析得出：弧根周圍空氣的熱電離導致了電弧的發展，靜電場力對電弧的發展起到了加速作用，電擊穿僅發生在閃絡最終的跳躍階段；通過測量閃絡過程中的放電電壓、泄漏電流、閃絡時間、覆冰水電導率、電弧長度及電弧半徑等參數，得到了不同階段電弧（電弧起弧階段、電弧發展階段及完全閃絡）的發展速度、臨界電弧長度均隨覆冰水電導率的增加而減小。
  5. Under pulse condition, charging and discharging of surface states between gate and drain induce gan hemt current collapse

    脈沖條件下， ganhemt電流崩塌效應主要由柵漏之間表面態充放電引起。
  6. In this paper, the theory of negatively charged surface states is used to investigate dynamic breakdown characteristics and the increase of gate - drain breakdown voltage as well as the reduction of saturated drain - source current after sulfur passivation. the measure which can improve the stability of sulfur passivation is proposed

    本論文通過對gaasmesfet擊穿機理和硫鈍化機理的研究，用負電荷表面態理論，解釋了gaasmesfet動態擊穿特性及硫鈍化后柵漏擊穿電壓增大、源漏飽和電流減小的機理，提出了改善硫鈍化穩定性的措施。
  7. We researched fabrication at different asputtering and annealing atmosphere, the different process conduced different electrical properties. we can conclude a higher annealing temperature and higher proportion of o2 during reactive sputtering favors the improvement of electrical performances of hfo2 dielectrics ; 4. the analysis of i - v curves of these devices displays different leakage current mechanism under different area of applied bias - voltage ; as to silc. there are different leakage current mechanism at influence of sil. c ; 5

    研究表明，在優化工藝條件下制備的hfo _ 2介質層中，襯底注入條件下由於其較低的體和界面缺陷密度，漏電流的輸運機制主要以schottky發射為主; silc效應導致hfoz / si界面缺陷態的增加，從而使得襯底注入條件下，柵泄漏電流機制不僅有schottky發射還有f一p發射機制起主要作用; 5 ）初步研究了氮化的hfo : （ hroxny ）柵介質的電學特徵。
  8. Based on the hydrodynamics energy transport model, the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density. the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet, and for both devices of different structure, the impact of n type accepted interface state on device performance is far larger than that of p type. it also manifests that the degradation is different for the device with different channel doping density. the shift of drain current induced by same interface states density increases with the increase of channel do - ping density

    基於流體動力學能量輸運模型，對溝道雜質濃度不同的深亞微米槽柵和平面pmosfet中施主型界面態引起的器件特性的退化進行了研究.研究結果表明同樣濃度的界面態密度在槽柵器件中引起的器件特性的漂移遠大於平面器件，且電子施主界面態密度對器件特性的影響遠大於空穴界面態.特別是溝道雜質濃度不同，界面態引起的器件特性的退化不同.溝道摻雜濃度提高，同樣的界面態密度造成的漏極特性漂移增大
  9. The emphases of our research works are as follows : under ultra - low temperature ( about 0. 236k ) conditions, how the frequency and power of the saw and the source drain voltage influence the acoustic current ; and the relationship between the source drain current and the split - gate voltage ; and how to find the cut off voltage of the quasi - 1d electron channel ; and also the frequency character of the idt in the saw parts

    研究的重點為，在甚低溫（ 0 . 236k ）下，通過實驗研究表面聲波的頻率和功率，源漏偏壓等因素對聲電電流的影響;研究準一維電子通道中不同源漏電流與分裂門負偏壓的關系，以找到分裂門的鉗斷點電壓;以及研究聲表面器件叉指換能器的頻率特性等。
  10. As a result, the fermi level at the surface will shift towards the valence band maximum ( vbm ). accordingly the band bending increases, and the surface depletion layer thickness enhances, therefore, the channel thickness reduces. this is the main factor resulting in the decrease of saturated drain - source current

    表面費米能級向價帶頂移動，能帶彎曲加劇，肖特基勢壘高度增加，表面耗盡層變厚，導電溝道變窄，是導致源漏飽和電流下降的主要因素。
  11. Surface leakage current

    表面漏泄電流
  12. Oxygen atoms in the air are known to actively react with the fresh gaas. it was observed that the ga - o bond is stronger than that of as - o and that ga atoms preferentially migrate towards the surface leaving vacancies behind in the subsurface region. this behavior can convert the subsurface layer into an as - enriched one

    本文分析了硫鈍化后源漏飽和電流減小的原因，認為gaas表面極易被空氣中的氧原子氧化，由於ga - o鍵比as - o鍵結合的更緊， ga原子優先向表面移動，這導致亞表面層成為富as層。
  13. Insulators leakage current has a close relationship with insulators contamination and humidity state, so it can provide an integrated reflection of the course of contamination flashover. the contamination flashover on - line monitoring device introduced in this paper predominates the insulators insulation degree by measuring leakage current, environment temperature and humidity. with the help of the device, an active partial aperiodic cleaning method will substitute the former passive general fixed cleaning method in order to prevent the contamination flashover to a larger extent

    本文所描述的防污閃在線監測系統通過直接測量絕緣子表面的泄漏電流及環境的溫度和濕度，經過數據處理、分析、判斷，達到對絕緣子絕緣狀況實時監測的目的，以此為依據變定期的、全面的、被動的清洗為不定期的、局部的、主動的清洗，最大程度地防止污閃事故的發生。
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