表面遷移率 的英文怎麼說

中文拼音 [biǎomiànqiānyílǜ]
表面遷移率 英文
surface mobility
  • 表 : Ⅰ名詞1 （外面;外表） outside; surface; external 2 （中表親戚） the relationship between the child...
  • 面 : Ⅰ名詞1 （頭的前部; 臉） face 2 （物體的表面） surface; top 3 （外露的一層或正面） outside; the ri...
  • 遷 : Ⅰ動詞1. （遷移） move 2. （轉變） change 3. （古時指調動官職） be appointed to a certain post Ⅱ名詞（姓氏） a surname
  • 移 : Ⅰ動詞1. （移動） move; remove; shift 2. （改變; 變動） change; alter Ⅱ名詞（姓氏） a surname
  • 率 : 率名詞（比值） rate; ratio; proportion
  • 表面 : surface; superficies; boundary; face; rind; sheet; skin; outside; appearance
  • 遷移 : move; remove; migrate; shift; transport; migration; transference; removal
  1. This phenomenon was closely related to the transportation and extraction rate of carbon atoms in the surface of catalysts at different temperatures

    這種現象與不同溫度下碳原子在催化劑表面的遷移和析出速率密切相關，也即與不同溫度下催化劑的活性有關。
  2. The oxide and reduce potential and the dopant concentration. the experiments of degradation methyl blue a1so showed that the photocatalytic activity could be greatly improved with vzos - loaded tio2, maybe that loading v2o5 would accelerate the electron captured and charge transferring, change the samp1e surface hydrophilic and absorption

    納米tio _ 2 - v _ 2o _ 5復合光催化劑對次甲基藍的降解實驗表明，復合v _ 2o _ 5后tio _ 2可以加速電子捕獲和電荷遷移速率，改變了樣品表面吸附親合力，使降解效率相比純tio _ 2有很大提高。
  3. The results showed that inclpc nanoparticles were ball - shaped with a size of 25 - 50 run, that their diffraction peaks become broader, and that the blue - shift in uv / vis absorption was also observed. the photoconductivity of inclpc nanoparticles in single - layered p

    本章的研究旨在對有機電子傳輸材料進行初步的探索，為今後新型的高遷移率有機電子傳輸材料的合成和表徵，以及應用等方面積累經驗。
  4. We represent a temperature model of surface carrier mobility of short channel most after thinking about kinds of dispersion effect

    在考慮了各種散射效應對遷移率的影響后，提出了短溝道most表面載流子遷移率的溫度模型。
  5. Measured results showed that the dl - a device with its structure as following ito / npb / alq / mg : ag was far more superior to sl device with the structure of ito / alq / mg : ag because the dl - a device better balanced energy band between each each layer and the mobility of carriers ( electrons and holes ), which led to the combination of carriers taking place in the bulk of emitter and avoided the excitons being eliminated by the electrodes which easily occurs in sl devices. as to the doped devices, measurements demonstrated an excellent device with its maximum brightness was 25000cd / m2

    研究結果表明， dl - a型雙層結構器件ito / npb / alq / mg : ag的各項性能指標明顯優于單層器件ito / alq / mg : ag ，因為前者有更好的載流子遷移率匹配以及能帶匹配，因此平衡了復合的載流子數目，並且能將復合區有效控制在發光層內部，有效避免了表面的大量缺陷以及電極猝滅效應，提高了載流子的復合效率，從而提高了器件的發光性能。
  6. Thought the pan evaporation, it has been found that the evaporation of shengli crude oil is controlled by the first step and the effect of wind velocity is small. the prediction equation is dw / dt ^ k d ? 2 a ju, y hct / t, which is related with the liquid characters and states ( e. g. thickness, area, viscosity ) and is independent of wind speed

    2 、實驗結果表明，勝利原油蒸發由第一步即蒸發由液體內部易揮發組分向液體表面的遷移來控制，因此風速影響很小，建立速率方程時不必考慮風速，只需考慮液體本身的性質和狀態（如厚度、表面積、粘度等） ，速率方程可寫為： dw dt = kd4 ? 』 a嚴t 。
  7. However, the refractive index will increase with the increase of the flow ratio of sifu / nhs, slightly increase with the increase of substrate temperate, and decrease with the increase of rf power. by measuring the passivation results of hydrogen plasma and sinx thin film, we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment, although it has little to do with the annealing temperature and time. the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon, but after annealing at high temperature the mobility turns down

    通過測試氫等離子體鈍化和氮化硅薄膜鈍化的效果，實驗還發現氫等離子體處理對多晶硅材料的少子壽命提高作用比較明顯，但是這種提高作用與處理溫度以浙江大學碩士學位論文王曉泉2003年5月及時間的關系不大；氨化硅薄膜中的氫對單晶硅的載流子遷移率提高有一定作用，但經過高溫處理后這種作用消失；氮化硅薄膜能提高單晶硅和多晶硅的少子壽命，具有表面鈍化和體鈍化的雙重作用；氫等離子體和氮化硅薄膜都能有效地提高單晶和多晶電池的短路電流密度，進而使電池效率有不同程度（絕對轉換效率0
  8. Abstract : based on the concept of space migration length of photo - activation species, the analytical expression of the total number n of photo - activation species that can reach a segment on the substrate in the cubic deposition reaction space is derived. the simulation of the relationship of deposition rate and position of substrate is also completed. the simulation result agrees with the experiment data well

    文摘:基於光激活物質空間遷移長度的概念，推導出方形反應空間中到達基片上單位面積的光激活物質總數的解析表達式，對光化學汽相沉積中淀積速率和基片位置的關系進行了模擬和分析.模擬結果同實驗結果符合良好
  9. The experiments show : growth temperature is one of the key growth parameter by which the surface morphology, alloy composition, crystalline quality, mobility and carrier concentration are influenced

    實驗表明：生長溫度是一個重要的生長參數，它對外延層的表面形貌、組分、結晶質量、遷移率、載流子濃度有著很大影響。
  10. Two typical examples analyses are conducted for the average conditions both of winter and summer climates under vapor diffusion and air leakage. a further discussion is set forth to determine the main factors that the moisture accumulation in wall is affected. it is found that the factors are the relative humidity at the wall surface, indoor temperature, permeability, air pressure difference and rate of the infiltrative or exfiltrative airflow

    本文首先研究了墻體內的濕氣遷移過程，詳細分析了濕積累現象形成的原因，通過對夏、冬兩季平均氣候下墻內溫度、水蒸氣壓力、相對濕度及濕積累在僅有擴散、擴散與空氣滲透同時存在等情況所作的具體計算，發現墻內、外表面的相對濕度、室內溫度、滲透率、空氣壓差以及空氣的滲流速度是影響墻內濕積累的主要因素。
  11. So next work should be to study the crystallization mechanisnu nickel contents and mobility after the nickel - silicide on the surface is removed

    對此方法的晶化機理和對鎳的含量及去除表面層的鎳化合物后遷移率的大小測試分析將在下一步工作中展開。
  12. The intrinsic carrier concentration reduces when decreasing the v / iii ratio. the high quality of in0. 53gao. 47as can be obtained at the range of 10 - 30 seconds of exchange time between ashs and phs. when the thickness of the buffer layer between the inp substrate and ingaas epilayer is 0. 2 um the mobility becomes the maximum and the carrier concentration is the lowest

    /比對外延層的表面形貌有較大影響，增大/比有利於提高材料的結晶質量；隨著/比增加，遷移率升高；本徵載流子濃度隨著/比減少而降低； ash _ 3和ph _ 3轉換時間在10秒到30秒之間可以獲得質量較好的ingaas外延層；在inp緩沖層厚度為0 . 2 m時遷移率達到最大，載流子濃度達到最低。
  13. In addition, when the electron - cavity pairs migrates to the films surface, there is adequate water to react with these electron - cavity pairs in good time. this not only reduces the composition probability of the electron - cavity pairs but also produces a large number of highly active hydroxyls that enhances the photocatalytic ability

    紫外光照射下產生的電子-空穴對遷移到薄膜表面后，有足夠的水分子及時地與空穴發生反應，不但減少了電子-空穴的復合機率，而且產生大量的強活性羥基，使薄膜的光催化性增強。
  14. In addtion, the growth rate of low temperature insb buffer layer was 0. 26 m / h, which was obtained by rheed intensity oscillation curves. growth temperature of insb epilayers were investigated with sem and dcxrd, and it was found that the optimum temperature was 440. a 2. 1 m insb layer grown at 440 had an x - ray rocking curve of 412 arcsec, the strain relaxtion was about 99. 02 %

    通過掃描電鏡形貌觀察與能譜分析發現:溫度較低時sb的表面遷移率低，容易在表面堆積;結合x射線雙晶衍射分析，確定高溫insb外延生長的最佳襯底溫度為440 ，該溫度下生長2 . 1 m的樣品x射線半高峰寬為412 ，應變弛豫99 . 02 % 。
  15. When the growth getting higher, the migration rate of carbon atoms was increased, more carbon atoms would pass through catalyst particles to contribute the growth of carbon nanotubes, which increased the growth rate and also resulted in less defects in carbon nanotubes

    在較高溫度時，隨著催化劑活性的提高以及碳原子在催化劑顆粒表面的遷移速率的增加，可提供更多的碳原子用於納米碳管的有序生長，減少了缺陷的引入。
  16. At lower growth temperature, the lower extracting rate of carbon atoms from catalyst particles due to the lower activity of the catalysts resulted in more defects formed in carbon nanotubes. moreover, the lower transportation rate of carbon atoms in catalyst particles also made lots of carbon atoms deposited on the surfaces of grown carbon nanotubes, or on carbon wrapped catalyst particles, even to form amorphous carbon layers

    在較低溫度時，由於催化劑的活性較低，導致石墨面在生長過程中引入的缺陷較多；另一方面，碳原子在催化劑顆粒內遷移速率較低，使得多餘的游離態碳原子（或原子團）可能在納米碳管表面以非晶形式沉積，或者包覆催化劑使其「中毒」失去催化活性，或者直接形成非晶的碳納米顆粒。
分享友人
分享到 Line

分享到臉書