襯底雜質 的英文怎麼說

中文拼音 [chèndezázhí]
襯底雜質 英文
substrate impurity
  • 襯 : Ⅰ動詞1 （在裏面托上一層） line; place sth underneath 2 （陪襯; 襯托） set off Ⅱ名詞（襯在裏面的附...
  • 底 : 底助詞（用在定語后, 表示定語和中心詞之間是領屬關系, 現在多寫作「的」）
  • 雜 : Ⅰ形容詞（多種多樣的; 混雜的） miscellaneous; varied; sundry; mixed Ⅱ動詞（混合在一起; 攙雜） mix; blend; mingle
  • 質 : Ⅰ名詞1 （性質; 本質） nature; character; essence 2 （質量） quality 3 （物質） matter; substance;...
  • 雜質 : [固體物理] impurity; foreign substance; impurity substance; inclusion; foreign matter
  1. With the development of science and technology, more and more oxide crystals are synthesized by more and more advanced technique, the new oxide crystals are incessantly synthesized and the new characters of oxide crystals are incessantly founded. corundum dopped with impurity not only is cherished because of it ' s beautiful appearance, but also is used in the fields such as electrotechnics, mechanism, laser, the optic apparatus and the underlay of semiconductor. sapphire dopped with ti3 + is the best material of the tunable solid laser. zno crystal is material of the direct gap semiconductor ( the width of forbidden band : 3. 37ev ). the excited emission in zno crystal at room temperature has been found, so the ultraviolet luminescence in zno semiconductor can be acquired at room temperature

    含有少量雜質的剛玉晶體（ - al _ 2o _ 3 ）不僅由於其色澤艷麗成為人們珍愛的名貴寶石，而且由於它具有的優異性能，被廣泛應用於電工、機械、激光器，光學器件和半導體襯底材料。鈦藍寶石是目前最優異的固體寬帶調諧激光材料，用於製作飛秒脈沖可調諧激光器。氧化鋅晶體是直接帶隙寬禁帶半導體材料（禁帶寬度3 . 37ev ） ，現已發現具有室溫下受激發射特性，有可能實現室溫下半導體紫外發光。
  2. By increasing the h2 dilution ratio, it is found that atomic hydrogen can selectively etch amorphous phase and stabilize crystalline phase. from the study on the distance from substrate to catalyzer, choosing a proper distance can ensure the gas fully decomposed, while a relatively low substrate temperature can cause the nanocrystalline particles to lose mobility and keep their sizes. the pre - carbonization process can enhance the nucleation density and make the growth of high quality nanocrystalline p - sic films much easier

    實驗結果表明：隨著工作氣壓的減小，薄膜的晶粒尺寸有所減小；通過提高氫氣稀釋度，利用原子氫在成膜過程中起的刻蝕作用，可以穩定結晶相併去除雜相；選擇適當的熱絲距離能保證反應氣體充分分解，又使襯底具有較高的過冷度，是形成納米薄膜的重要條件；採用分步碳化法可以提高形核密度，有利於獲得高質量的納米- sic薄膜；襯底施加負偏壓可以明顯提高襯底表面的基團的活性，因負偏壓產生的離子轟擊還能造成高的表面缺陷密度，形成更多的形核位置。
  3. Complicated hydrologic and geographic conditions, and the large scale of the xiaolangdi hydraulic project on the yellow river are introduced briefly. three desilting tunnels are designed to meet the requirements of flood control, sediment discharge and runoff regulation. according to the performance requirements of desilting tunnels, the tunnel lining down - stream of the grouting curtain is designed to be post - tensional prestressed lining. on the basis of investigation and research, experiements and analysis, the unbonded prestressing system is used. it is the largest unbonded prestressed tunnel lining project in the world, and the first one in china

    簡介黃河小浪底水利樞紐復雜的水文、地質條件以及龐大的工程規模.該樞紐設計有3條排沙洞，擔負著泄洪、排沙、調節徑流和保證進水口不被泥沙淤堵的任務.根據排沙洞的水庫運用要求，灌漿帷幕下游排沙洞洞身段設計為混凝土后張預應力隧洞.通過大量的調研、試驗、分析論證，在施工前確定該預應力方案選用無粘結預應力系統，成為目前世界上規模最大的無粘結預應力隧洞襯砌工程，在國內尚屬首例
  4. High quality single - crystal zns - based ii - vi thin films have been prepared on gaas and gap substrate using molecular beam epitaxy ( mbe ) technique. successful n - type doping of znsxse1 - x alloy using aluminum source has been carried out

    本文研究了在gaas和gap襯底上，本徵型和n型al摻雜zns基單晶薄膜的分子束外延生長，獲得了高質量的單晶外延薄膜。
  5. The defect and interface in sapphire and gan were observed by afm. we found that when the dislocation density in sapphire was lower thanl05 / cm2, the dislocation density in gan was 108 ~ 109 / cm2and not linear with the dislocation in sapphire. the impurity of mo in sapphire and gan was measured by sem xps epma and uvf we found the mo content in sapphire was 10 - 4, and the mo content in gan was lower than ppm. so it was concluded that low - cost mo crucible is viable

    用掃描電鏡（ sem ） 、 xps 、電子探針和紫外熒光光譜儀測量了藍寶石襯底和gan外延層中的mo雜質的含量，發現藍寶石襯底中含有mo雜質，含量約為10 ~ （ - 4 ） （質量含量） ；而在外延層gan中沒有檢測到mo雜質，即mo雜質含量小於ppm級。
  6. In this paper, high quality transparent and conductive al - doped zno thin films on quartz substrates are prepared by electron beam evaporation technique

    本文採用電子束蒸發方法在石英襯底上制備出質量較好的al摻雜的zno薄膜材料。
  7. In this paper, we implanted mn + ion of different dose into undoped semi - insulating ( 100 ) gaas substrate then performed rapid thermal annealing in different temperature and time. studied the different annealing condition dependence of the samples " structure, electrical and magnetic properties and the relation of the mn + forms and these properties

    本課題採用離子注入的方法將不同劑量的mn ~ +注入到非摻雜半絕緣（ 100 ） gaas單晶襯底中，然後進行不同溫度和時間的快速熱退火處理，研究了不同的退火條件對樣品注入層的晶體結構、電特性和磁特性的影響以及mn ~ +在樣品中的存在狀態與這些性質之間的關系。
  8. In order to otain high quality zno thin films, we, for the first time, employ the plasma enhanced chemical vapor deposition ( pecvd ) to prepare high quality zno thin film at low temperature using a zinc organic source ( zn ( c2h5 ) 2 ) and carbon dioxide ( co2 ) gas mixtures. the effects of the growing condiction and the native oxide layer of si substrate on the quality of zno thin films was studied in detail. to prepare p - zno and overcome the dufficulty of reverse due to the interaction between the n atomic, we obtain high qulaity p - zno by a easy way of thermal zn3n2

    為了在低溫下制備高質量的氧化鋅薄膜，我們採用金屬有機源和二氧化碳氣源，首次利用等離子體增強化學氣相沉積的技術在低溫下制備了高質量的氧化鋅薄膜，系統地研究了生長條件以及襯底表面氧化層對薄膜質量的影響，確定了生長高質量氧化鋅薄膜的優化條件；為獲得p - zno材料，克服在zno中摻n雜質間相互作用影響摻雜效率不易獲得p - zno的困難，我們通過熱氧化zn3n2的方法制備了p - zno ，獲得了一系列研究結果： 1 、詳細研究了氣體流速比，襯底溫度和射頻功率實驗參數對氧化鋅薄膜特性的影響。
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