負阻器 的英文怎麼說

中文拼音 [fùzǔqì]
負阻器 英文
dynatron
  • 負 : Ⅰ名詞1 （負擔） burden; load 2 （虧損） loss 3 （失敗） defeat Ⅱ動詞1 [書面語] （背） carry on th...
  • 阻 : 動詞（阻擋; 阻礙） block; hinder; impede; obstruct
  • 器 : 名詞1. （器具） implement; utensil; ware 2. （器官） organ 3. （度量; 才能） capacity; talent 4. （姓氏） a surname
  1. The main operating transformer connected by a adscititious tandem on - load - tap - changing one is the important mode. about this question readers can get a correct and detailed answer from this paper

    通過基本定義和有關名牌值進行了計算和分析，認為在正負極限檔，外加串聯調壓變的阻抗值相對額定檔的偏差很小，所以可不必在意這種變壓器整體阻抗的偏差值。
  2. Indirectly heated temperature coefficient thermistors

    旁熱式負溫度系數熱敏電阻器
  3. In the experiment of varistor bleeder circuit, the successful load of equal voltage requires that the relation between load and varistor be correctly defined, so as to choose appropriafe experimental instrument

    摘要在變阻器分壓電路實驗中，要求負載得到均勻變化的電壓時，怎樣確定負載與變阻器之間的關系，以便在實驗中正確選擇實驗儀器。
  4. Directly heated common negative temperature coefficient thermistors

    直熱式普通用負溫度系數熱敏電阻器
  5. Directly heated measuring type negative temperature coefficient thermistors

    直熱式測溫型負溫度系數熱敏電阻器
  6. Cathode degeneration resistor

    陰極負反饋電阻器
  7. Development of cmos devices and circuits with sub - 0. 1 m gate length

    新型高頻硅光電負阻器件的特性模擬及測試分析
  8. Negative resistance amplifier

    負阻放大器
  9. Negative impedance converter

    負阻抗變換器
  10. A pulldown resistor to the negative rail will allow the output to approach that rail ( provided the load impedance is high enough, or is also grounded to that rail ), but only slowly

    一個下拉電阻器將允許輸出迫近迫近該電源軌（所提供的負載阻抗足夠高，或負載也是接地的） ，但這樣速度較慢。
  11. In order to understand the lamp ' s negative incremental impedance of characteristics and analyze the stability of ballast / lamp system clearly, the low - frequency ballast system stability with closed loop are analyzed based on the hid lamp frequency - domain model in chapter ii

    為了更好地理解燈的負阻特性並分析電子鎮流器系統的穩定性問題，論文第二章著重從燈的頻域模型出發分析了閉環控制下的低頻方波電子鎮流器系統的穩定性問題。
  12. The device structure and physical models of 4h - sic mosfet and mesfet are built and the properties are simulated with the use of medici software. the influence of the temperature and structure parameter on the device ' s properties is summarized indicates that no negative resistance exists in breakdown property and the breakdown voltage is up to 85v and 209v separately. the maximum power density of 4h - sic mesfet is as high as 19. 22w / mm. at the same time, the processes of sic field - effect transistor is studied and the fabrication processes suitable to sic mosfet are developed.

    論文分析建立了4h - sicmosfet和mesfet器件的結構模型和物理模型，採用二維器件模擬軟體medici對4h - sicmosfet和mesfet的輸出特性進行了模擬分析，研究了溫度和結構參數對器件特性的影響，表明兩種器件的擊穿特性均沒有負阻現象，擊穿電壓分別達到85v和209v ，由此得到4h - sicmesfet最大功率密度可達到19 . 22w mm ；同時，研究了sic場效應晶體管的製作工藝，初步得到了一套製造sicmosfet器件的製造工藝流程，研製出了4h - sicmosfet器件。
  13. Directly heated negative temperature coefficient thermistors - generic specification

    直熱式負溫度系數熱敏電阻器.總規范
  14. Directly heated voltage - stabilizing type negative temperature coefficient thermistors

    直熱式穩壓型負溫度系數熱敏電阻器
  15. N. t. c. thermistor

    負溫度系數熱敏電阻器
  16. General specification for the directly heated negative temperature coefficient thermistors

    直熱式負溫度系數熱敏電阻器總規范
  17. First of all, single port negative impedance oscillator is analyzed in the thesis. a design method of gunn diode vco is introduced and an vco chip using gunn diode is fabricated. the substrate of the vco chip is gaas with dimension of 4. 4mmx3. 9mm

    本文首先對單埠負阻振蕩器進行了分析，給出了gunn二極體負阻振蕩器的設計方法，設計出了一個變容管調諧平面微帶gunn二極體vco晶元，該晶元以gaas為襯底，尺寸為4 . 4mm 3 . 9mm 。
  18. It also gives the motive of the ka - band vco and mixer, associated with the subject ' s requirement and the realistic conditions, according to which a proposal is confirmed that the gunn diode and the varactor are mounted in the same cavity to fulfill the vco and an antiparallel diode pair is used to fulfill the harmonic mixer. in chapter 2, based on the basic theory of negative resistance oscillating, we analyses the gunn oscillator and it ’ s tuning character. chapter 3 introduces the theory of millimeter - wave harmonic mixer

    以此為根據結合課題需要和實驗室的實際條件，確定vco採用耿氏管腔體振蕩器形式，變容管與耿氏管安裝在同一個腔內以進一步減小體積，採用反向並聯二極體實現諧波混頻;第二章介紹負阻振蕩器理論及其調諧原理;第三章介紹毫米波諧波混頻器基本原理;第四章給出了振蕩器及諧波混頻器的設計過程，整個組件聯調的結果;最後是結束語，分析了電路中存在的問題，指出了改進方向。
  19. Detail specification for mf11 directly heated negatice temperature coefficient thermistor

    Mf11型負溫度系數熱敏電阻器詳細規范
  20. Clients may be required to provide appropriate loading resistors for the leak current test

    客戶或須提供適當負載的電阻器作漏電測試之用。
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