輻度閾值 的英文怎麼說
中文拼音 [fúdùyùzhí]
輻度閾值
英文
amplitude threshold-
The electronic temperature, intensities of all lines and continuous spectra gradually increased with the increment of laser energy, and they got to maximum at different laser energy. our results of copper and aluminum show that there are possibly different thresholds of laser energy to electronic temperature and intensities of emission spectra of laser ablated plasma. at the different environmental gas pressure, spatial emission intensity distribution is explained by the competition among " heat reservoir effect ", " confined effect " and " s hadow effect "
認為cu等離子體羽的發光機制是由電子與粒子的碰撞傳能、電子與離子的復合形成的；隨激光能量的增加， cu等離子體特徵輻射（分立譜） 、連續背景輻射（連續譜） 、電子溫度都出現最大值；結合對al的實驗結果說明：激光燒蝕金屬產生的等離子體，其特徵輻射、連續輻射、電子溫度可能都存在一定的能量閾值；背景氣壓對激光燒蝕等離子體譜線的影響，其機理可以認為是「熱庫效應」 、 「約束效應」及「陰影效應」相互競爭的綜合結果。An analytical mosfet threshold voltage shift model due to radiation in the low - dose range has been developed for circuit simulations. experimental data in the literature shows that the model predictions are in good agreement. it is simple in functional form and hence computationally efficient. it can be used as a basic circuit simulation tool for analysing mosfet exposed to a nuclear environment up to about 1mrad. in accordance with common believe, radiation induced absolute change of threshold voltage was found to be larger in irradiated pmos devices. however, if the radiation sensitivity is defined in the way we did it, the results indicated nmos rather than pmos devices are more sensitive, especially at low doses. this is important from the standpoint of their possible application in dosimetry
該模型物理意義明確，參數提取方便，適合於低輻照總劑量條件下的mos器件與電路的模擬。並進一步討論了mosfet的輻照敏感性。結果表明，盡管pmos較之nmos因輻照引起的閾值電壓漂移的絕對量更大，但從mosfet閾值電壓漂移量的擺幅這一角度來看，在低劑量輻照條件下nmos較之pmos顯得對輻照更為敏感。Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically
在此基礎上，對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究，著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移（ vth和vit 、 vot ）與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。Secondly, other parameters such as temperature difference and emissivity of target and sky, molecular absorptive transmittance, instantaneous field of view ( ifov ), contrast threshold and radiant wavelength are discussed in detail
然後，對目標天空背景溫差、發射率，氣溶膠衰減系數，瞬時視場、對比度探測閾值以及輻射波長等參數作了詳細討論。The gasoline flame radiation intensity and flicker frequency are both monitored to improve the system reliability. thus it is trusted “ flame on ” only under the case when the radiation intensity and flicker frequency are both above the threshold values ; otherwise it is treated as “ flame blowout ”. then the transmitter, the displayer and the software also are present
本設計中採用同時測量火焰輻射強度和燃燒時閃爍頻率的方式保證監測的可靠性，當頻率和強度均高於設定的閾值時，判定為「有火」 ;反之，判定為「無火」 。Compared to gan, which is one of the most successful wide - band semiconductor materials at present, zno is promising : high - quality zno with very low defect densities can be synthesized at much lower temperature than gan ; zno can emits light with shorter wavelength than blue light emission from gan ; zno has higher excitonic binding energy ( ~ 60mev for zno, 25mev for gan ), which promises strong photoluminescence from bound excitonic emissions at room temperature ; meanwhile, homogeneous bulk zno is available
和gan相比， zno薄膜具有生長溫度低，激子復合能高（ zno ： 60mev ， gan ： 21 25mev ） ，受激輻射閾值較低，能量轉換效率很高等優點。有可能實現室溫下較強的紫外受激發射，制備出性能較好的探測器、發光二極體和激光二極體等光電子器件。Determination of the detection limit and decision threshold for ionizing radiation measurements - fundamentals and application to counting measurements by high resolution gamma spectrometry, without the influence of sample treatment
電離輻射測量用探測限值和判斷閾的確定.基本原則和對不經過樣品處理的高解析度能譜法計數測量的應用In detail, the major work that have been done are as follows : l. irradiated by the 1. 06 m 1. 319 m 3. 8 m laser respectively, when the incident laser power density is between the saturation threshold and the damage threshold, the vibrating phenomenon and the zero - output phenomenon can be seen in the pv - type detectors " response curve
論文的主要工作有： 1分別用波長為1 . 06 m 、 1 . 319 m 、 3 . 8 m的激光輻照光伏型（ pv ） hgcdte探測器，實驗發現，當輻照激光的功率密度大於其飽和閾值而小於其破壞閾值時，探測器的輸出存在「振蕩現象」和「零壓輸出現象」 。分享友人