退火程度 的英文怎麼說

中文拼音 [tuìhuǒchéngdù]
退火程度 英文
annealing grade
  • 退 : 動詞1 （向後移動） retreat; draw back; move back 2 （使向後移動） cause to move back; remove; wit...
  • 火 : fire
  • 程 : 名詞1 （規章; 法式） rule; regulation 2 （進度; 程序） order; procedure 3 （路途; 一段路） journe...
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 退火 : [冶金學] anneal; annealing; back-out
  • 程度 : 1. （知識、能力的水平） level; degree 2. （事物變化達到的狀況） extent; degree
  1. Besides the two algorithms given above, we also give a algorithm that is based on simulated annealing algorithm ( saa ), although for the effective of algorithms it is mostly suitable for level track

    另外，本文還給出一種基於模擬退火演算法的演算法，但該演算法在很大程度適合於水「平軌道。
  2. We prepare the si - sio2 and ge - sio2 thin film by using the dual ion beam co - sputtering method and the rf co - sputtering technique respectively, adjusting the substrate temperature ( ts ) and the annealing temperature ( ta ). then we analysis the structure of the thin film by using the xrd and tem

    論文採用雙離子束濺射和射頻磁控濺射沉積技術，通過改變薄膜沉積過程中基片溫度（ t _ s ）以及薄膜制備完成後退火溫度（ t _ a ）分別制備了si - sio _ 2和ge - sio _ 2薄膜。
  3. We obtained a high quality zno thin film with the pl fwhm of 94 mev at 900. the free exciton binding energy deduced from the temperature - dependent pl spectra is about 59 mev at 900, suggesting that the film quality can be improved by annealing process

    當退火溫度為900時獲得了高質量的氧化鋅薄膜，光致發光譜的半高寬為94mev ，通過變溫實驗得到激子束縛能為59mev ，表明退火過程提高了薄膜的質量。
  4. Then, the effect of heavily doped boron on ig of czochralski silicon was also investigated. it is found that no dz ( denuded zones ) were observed in the hb samples subjected to high one - step temperature, ramping annealing respectively. for conventional high - low - high three - step ig annealing, the dz becomes narrower and bmd density is higher in hb samples than that in lb samples, as a result of hb enhancing oxygen precipitation

    結果顯示，單步高溫熱處理時重摻硼樣品不能形成潔凈區；降溫退火中，降溫速度較為緩慢（ 3 / min ）時能生成一定量的氧沉澱，但沒有潔凈區形成；普通高?低?高三步熱處理過程中，形成明顯的潔凈區，但相對輕摻樣品而言，潔凈區較窄，氧沉澱密度明顯偏高，說明重摻硼樣品吸雜能力強。
  5. Besides, scan rate and cycle period also affect the result ; co - deposition of dualistic oxide is a focus of research, as an element in the same group, ir is selected. deposition rate of composition is decreased by the adding of ir composition, and when the proportion of ir exceeded 50 %, composition procession can be ceased. but cooperation of ir and ru oxide can highly increase the specific capacitance of active material ; annealing treatment under a certain temperature can help to change the hydrate ru composition into mixture state ru oxide, accordingly increase the stabilization of active material

    研究表明:電解液的配製過程中，氯化釕濃度、溶液ph值、陳化時間、溶液溫度對電鍍效果均有影響，其中溶液ph值是最主要的影響因素;在儀器的使用條件探索中，理論結合實驗確定了本電鍍液體系循環伏安電勢窗的理想范圍，並發現循環伏安掃描速度和掃描周期對電鍍結果也有較大影響;混合氧化物的共沉澱是目前研究熱點，在此選用與釕同一族的銥作為共沉澱元素，銥的加入會阻礙氧化物的沉積速度，銥的比例超過50 %會使沉積作用停止，但是二元氧化物的協同作用使沉積的活性物質比容量大大提高;一定溫度下退火后處理作用會使水合釕化物轉變成混合價態的氧化釕，從而提高活性物質的穩定性。
  6. The results proved that : ( 1 ) because of the material ' s difference of primer - 9 and primer - 5, the maximum stress of primer - 5 is larger than primer - 9 but the maximum displacement is smaller than primer - 9. ( 2 ) because of the unrenewable shape changing of primer - 9 after impacting by the pin, it will cracking under high pressure more easily. so, the paper give the suggestion that the designer should decrease the depth of impacting by pin in the case of the primer be fired successfully

    對底- 9底火、底部被擊針撞擊后的第- 9底火和底- 5底火在膛壓作用下分別進行了有限元數值分析，計算表明： （ 1 ）底- 5底火底部擊針撞擊部位為火帽座，其材料為鋼帶，底- 9底部承受撞擊部位為底火體，其材料為冷拉退火圓鋼，由於材料強度不同，承受壓力能力和變形能力不同：雖然在膛壓作用過程中底- 5底火的最大應力值比底- 9底火的大，但底- 5底火的最大位移量卻比底- 9底火的小得多。
  7. According to the relevancy between web pages and topic, this algorithm first divides the web pages into two types : topic - relevant web page cluster and transitional web page cluster, which determined by simulated annealing algorithm

    演算法根據網頁與主題的相關程度將網頁分為與主題相關的網頁集群與過渡型的網頁集群，利用模擬退火的演算法進行評估。
  8. We measured the samples " electrical properties ( square resistance, square carrier concentration, carrier mobility and hall coefficient ) at room temperature by hall measurement. the experimental results revealed that all the samples are p - type, with increasing the annealing temperature, the carrier mobility increased and the square carrier concentration decreased. these changes in electrical properties are explained by a decrease in the number of mn acceptors because of the forming of mnas phase and the resuming of lattice defects during annealing

    所有樣品均為p型導電類型；發現在650到850溫度范圍內，隨著退火溫度的升高，樣品的方塊載流子濃度呈下降趨勢，而載流子遷移率呈上升趨勢；這是由於在退火過程中，隨著退火溫度的升高，有更多的mn參與mnas相的形成，使得以替位受主形式存在的mn減少，並且晶格缺陷得到恢復所致。
  9. The paper investigats modeling and optimizing problems of parallel machine scheduling with resource - constrained and multi - step working procedure, acting bell - type annealing of shanghai baosteel yichang sheet lt. co. as practical background, designs and develops scheduling production system which is optimized according to practical demand of annealing workshop

    本文以上海寶鋼益昌薄板有限公司罩式爐退火過程為背景，研究了資源受限多步工序并行機器調度問題的建模和優化問題，結合退火爐車間生產調度的實際需要，進行了退火爐優化排產系統的設計和開發。
  10. In the experiments, we also found the - sources flow rate, temperate of the substrates, annealing time and annealing temperature have an important infuence to epitaxial quality of the films

    在實驗過程中，我們也發現-族源氣體的流量比、襯底溫度、退火時間和退火溫度對外延晶體的生長質量也有重要的影響。
  11. Water steam was used as oxidant, and the optimum water steam partial pressure is between 1 10 - 4 and 5. 5 10 - 4 pa. under the optimum growth parameters, a ceo _ 2 seed layer with highly textured degree was successfully prepared. beside the one step process was experimented in this dissertation, the two step process was proposed and studied to further improve the quality of ceo _ 2 seed layer. in the two step process, about 15 nm thick of ce metal layer was deposited on metallic substrate at the first step, then water steam was introduced in the chamber, and the ceo _ 2 thin films were subsequently deposited with reactive sputtering in the

    總結出沉積ceo _ 2薄膜的優化工藝條件，當沉積溫度為720 - 850 、水蒸汽分壓介於1 10 - 4 - 5 . 5 10 - 4pa之間、退火時間40min時，獲得了織構程度良好的ceo _ 2種子層薄膜; 3 .由於一步法制備ceo _ 2種子層中水分壓范圍狹窄，工藝條件難以控制，並且退火延長了薄膜的制備時間，因此，本論文又採用了兩步生長法沉積ceo _ 2種子層，即:先在ni - w基帶上沉積一層約15nm的金屬ce薄膜，再通入氧化氣氛（水蒸汽） ，繼續進行薄膜沉積。
  12. A large amount of nano - crystals are found in the film when the sample was annealed for one hour at 500 ? with the crystallinity being increased to 50 %

    研究結果發現，未經過退火處理的薄膜是納米晶粒鑲嵌于非晶介質的復合薄膜，薄膜中的結晶程度不是很高。
  13. The first one was called one step process or isothermal deposition and annealing process. in this process, the ceo _ 2 layers were formed at high temperature and oxidative atmosphere and then annealed at the same temperature. the relationship between the growth parameters and the textured degree of ceo _ 2 thin film was systematically studied, and the optimal growth parameters were summaried

    採用等溫退火法（或稱「一步法」 ）沉積ceo _ 2 ，即:先在氧化性氣氛下直接反應生長ceo _ 2薄膜，再在與沉積溫度相同的溫度下對薄膜進行退火處理，系統研究了沉積溫度、退火時間、水蒸汽分壓對薄膜c軸織構程度的影響。
  14. One is about of temperature - dependence of luminescence of eu3 + and tb3 + doped in oxide glass and nanocrystalline y2o3 ; the other is about of light - induced luminescent and structural change in nanocrystalline y2o3 : tb. the creative works are as follows : ( 1 ) euand tb doped nanocrystalline y2o3 with different sizes were prepared by combustion synthesis. dependences of particle size, crystallinity and fluorescence characteristic on ratio of gly / y ( no3 ) 3 and annealing temperature were studied

    本文以變溫與光輻照為實驗方法研究了eu與tb摻雜y _ 2o _ 3納米晶及氧化物玻璃中發光性質隨溫度的變化關系和光誘導y _ 2o _ 3 ： tb納米晶發光性質及結構的改變過程，得到如下創新性研究成果： （ 1 ）用燃燒法制備了稀土摻雜y _ 2o _ 3納米晶，研究了甘氨酸與硝酸釔的反應比例（ g n ） 、退火條件對稀土摻雜y _ 2o _ 3納米晶顆粒尺寸、結晶狀況及發光特性的影響。
  15. Based on the comparing analysis and character of clustering algorithm the simulated annealing （ sa ） algorithms was applied to the data clustering. simulated annealing （ sa ） algorithms are random search techniques based on physical annealing process, which can prevent the optimizing process into local optimization and get the global optimization

    演算法以優化過程的求解與物理退火過程的相似性為基礎，通過接受準則和對下降溫度的控制，能夠有效的克服優化過程陷入局部極小從而獲得全局最優解。
  16. As well, the compress stress existed in ( 002 ) crystal plane are found and can be explained by the matching between film material and substrate material as well as the different thermal expand coefficient between them

    同時， zno薄膜（ 002 ）方向上存在著內應力，內應力是由膜材料與基底材料之間的晶格失配和不同熱擴散系數造成的，退火可可使內應力的到不同程度的釋放。
  17. Thirdly, integrating bell - type scheduling investigation of domestic and overseas documents, the paper defines optimized scheduling production of bell - type annealing process as the problem of parallel machine scheduling with resource - constrained and multi - step working procedure, whose optimized function of objective function is given also. furthermore, the author constructs bell - type optimized scheduling model by means of the way combing discrete event simulation with algorithm of intelligent optimization

    本文在綜合國內外對于罩式爐調度研究的基礎上，將罩式爐退火過程優化排產定義為資源受限多步工序并行機器調度問題，並定義了優化目標評價函數；將面向對象的離散事件建模模擬方法和智能優化方法相結合建立了退火爐優化排產模型。
  18. S. the composite prepared has excellent heat stability and high - temperature property. during the course of high temperature annealing, the hardness of the composite does not reduce obviously until 973k, while the temperature of pure copper ( after cold machining ) is 423k in the same conditions

    制備的cr _ 2o _ 3 cu復合材料具有良好的熱穩定性及高溫性能，在高溫退火處理過程中，硬度顯著降低點的溫度為973k ，大大高於純銅的硬度降低點。
  19. Annealer is an important part in the process of glass production, stabilization of annealer temperature will directly affect the quality and the finish rate of glass

    退火是玻璃生產過程的一個重要環節，退火溫度的穩定直接影響著玻璃的質量和成品率。
  20. At present, local morphology was used to discriminate ferroelectric phase area and non - ferroelectric phase area, but once morphology variation of phase transformation was tiny, the ferroelectric phase area and non - ferroelectric phase area was hard to discriminate only from morphology view. however, the introduction of sndm can overcome this limitation, and visualize the investigation of annealing process. combining x - ray diffraction, atomic force microscopy ( afm ) with sndm, the phase transformation process of pzt thin films with different annealing time and of plt films with different annealing temperature were studied, respectively

    結合原子力顯微鏡（ afm ） 、 sndm 、 x射線衍射（ xrd ） ，通過對微區形貌、電容分佈變化和鐵電薄膜結晶情況的表徵和分析，研究了pzt鐵電薄膜和plt鐵電薄膜的晶化過程，分析了不同退火時間對pzt鐵電薄膜微結構，不同退火溫度對plt薄膜的微結構和微區極化分佈的影響，有效克服僅依據形貌特徵判定鐵電相與非鐵電相的局限性，實現鐵電薄膜微區晶化過程的可視化分析，豐富了晶化過程的研究方法。
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