過退火 的英文怎麼說

中文拼音 [guòtuìhuǒ]
過退火 英文
overanneal
  • 過 : 過Ⅰ動詞[口語] （超越） go beyond the limit; undue; excessiveⅡ名詞（姓氏） a surname
  • 退 : 動詞1 （向後移動） retreat; draw back; move back 2 （使向後移動） cause to move back; remove; wit...
  • 火 : fire
  • 退火 : [冶金學] anneal; annealing; back-out
  1. The procedure functions in the compare between partial image of dynamic collection and corresponding image of the airscape. in chapter 5, basing on the analysis of correlative theory of digital image, we introduce the improved fasted - down algorithm and simulative anneal algorithm, which applies to nn calculation, an d bring forward the unique and effective means, correlative original value evaluation. basing on the combination of correlative arithmetic, a stable, high - speed and exact correlative arithmetic is formed, which makes it possible to apply computer vision detection of single - needle quilting in industrial production

    本文展開研究並取得一定成效：構建了基於pci總線的微機實時圖像採集系統；在採集的布料總圖（鳥瞰圖）的基礎上，通過數字圖像的數字濾波、圖像增強、邊緣檢測等處理，提取布料圖像的邊緣，對輪廓的矢量化的象素點進行搜索，得到相應的圖案矢量圖，從而確定絎縫的加工軌跡，生成加工指令；在進給加工過程中，主計算機對動態局部圖像與總圖（鳥瞰圖）的對應部分進行圖像相關的匹配計算，應用數字圖像理論，結合神經網路計算的改進最速下降法和模擬退火演算法，提出獨特而有效的相關迭代初始值賦值方法，形成穩定、高速和準確的相關運算，實現單針絎縫視覺測量和自動控制。
  2. The degree of crystallinity can be increased by annealing in an inert atmosphere.

    結晶度可通過在惰性氣體中的退火處理來提高。
  3. Three : they are hardening, temper and anneal

    三個過程：它們是淬火、回火和退火。
  4. Slices of hg _ ( 1 - x ) mn _ ( x ) te crystals were annealed under low temperature in hg atmosphere to improve their electronic properties. the electronic properties of annealed slices and coterminous non - annealed slices were evaluated by hall measurement

    為改善晶體的電學性質，本文通過優化退火工藝，對hg _ （ 1 - x ） mn _ xte晶片進行了低溫hg氣氛下的退火。
  5. In this paper, the flow pattern defects ( fpds ) were revealed by secco etchant and their shape, distribution on wafer and tip structure were studied in details by optical microscope and atomic force microscope ( afm ). the relationship between etching time and the tip structure of fpds was also discussed. furthermore, by studying the effect of rapid thermal annealing ( rta ) on the density of fpds in ar, the annihilation mechanism of fpds was discussed in this paper

    本文將cz硅單晶片在secco腐蝕液中擇優腐蝕后，用光學顯微鏡和原子力顯微鏡對流動圖形缺陷（ flowpatterndefects ， fpds ）在矽片中的形態、分佈及其端部的微觀結構進行了仔細地觀察和研究，並討論了腐蝕時間對fpds缺陷端部結構的影響；本文還通過研究ar氣氛下快速退火（ rapidthermalannealing ， rta ）對fpds缺陷密度的影響，初步探討了fpds的消除機理。
  6. Implantation damage can be removed by annealing, i. e. heating in flowing gas.

    注入損傷可以通過退火，即在流動空氣中熱處理來消除。
  7. By analyzing the microstructure of as - cast alloys with different surplus of samarium added, the optimum surplus of samarium is decided. by comparing the microstructure of the alloys annealed for different time, the ideal and economical annealing time is confirmed. the microstructure and phase composition of alloys during the whole preparation of sm2fe17nx are analyzed using the scanning electron micrograph with energy - dispersive x - ray analysis and x - ray diffraction patterns

    本論文首先就熔煉工藝參數對鑄態組織微結構的影響進行了探討，並制定出一套較為合適的熔煉工藝；通過對不同釤加入量的鑄態組織微觀結構的觀察分析，確定了原料配置過程中釤的最佳補償量；通過對採用不同退火時間的合金組織進行比較，確定了理想、經濟的退火時間；同時還利用掃描電子顯微圖像和x射線衍射圖譜，比較了整個制備過程中，試樣微結構和相組成的變化情況。
  8. The dependence of oxygen precipitation and induced - defects in heavily as - doped silicon on heat treatment process was studied by annealing and ig process, chemical etching, scanning electron micrograph ( sem ) and transmission electron microscopy ( tem ). a developed ig technique was suggested and the mechanism of the influence of as on oxygen precipitation formation in heavily as - doped silicon was discussed

    本文通過化學腐蝕、光學顯微鏡、掃描電鏡（ sem ） 、透射電境（ tem ）等分析技術，對重摻砷硅單晶在單步退火工藝和內吸雜退火工藝中氧沉澱及誘生缺陷的形態，形核與熱處理溫度、時間的關系等進行了研究。
  9. This equipment is the key of producing arc glass and laminated glass of shower bath room. it lets the flat glass changing its arc shape by drying, bending and annealing

    本設備是生產汽車弧形、沐浴房夾層玻璃製品的關鍵設備。通過對平板玻璃的烘彎、退火，使之彎曲成玻璃製品所需要的各種弧度和形狀。
  10. Due to high - thermal stability and independent of impurities dj - center is argued to originate from antisite or antisite complex. furthermore, the ltpl measurements have been taken on as - irradiated and postannealed p - type 6h - sjc, l ; lines related to dj - center were not observed with sample after postannealing at 1500 ?, the observation of a series of high intensity spectra which may mask the d1 - center due to the recombination of the d - a pairs

    本文還對經幅照的p -型6h - sic的幅照退火特性進行了研究，在經過1500後退火的樣品中沒有觀察到d _ i - center ，這可能是由於d _ i - center被實驗中觀察到的源於d - a對輻射復合的高強度的譜峰所掩蓋。
  11. High deposit temperature leads to transmission falling of the unannealed films. but the average transmission of sample deposited at 500 is higher than that at 450

    未經退火的薄膜透過率隨沉積溫度升高而呈現下降的趨勢，但500樣品比450的平均透過率高。
  12. With the development of the growth skill craft of gaas single crystal, the density of el2 can be controlled in 1 - 5 1016 / cm ~ 3 and its distribution becomes more uniform in gaas wafer too, so the distribution of carbon seems to be more important to determine the uniformity of electrical resistivity of si - gaas material. so it seems to be very important to study the distribution of carbon and the effect of dislocation on the distribution of carbon

    隨著單晶生長技術的發展，通過退火，由於si - gaas中理論化學配比偏離， el2濃度可被控制在1 1 . 5 10 ~ （ 16 ） cm ~ （ - 3 ） ，且分佈均勻。因此碳的分佈就成為決定si - gaas材料電阻率均勻性的一個關鍵因素。所以，研究碳微區均勻性就顯得非常重要。
  13. Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

    Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige
  14. A large amount of nano - crystals are found in the film when the sample was annealed for one hour at 500 ? with the crystallinity being increased to 50 %

    研究結果發現，未經過退火處理的薄膜是納米晶粒鑲嵌于非晶介質的復合薄膜，薄膜中的結晶程度不是很高。
  15. The photoluminescence of the thin films without post heating shows that the increasing of the deposit temperature decreases the pl intensity. only the sample deposited at 450 has one evident luminescence band found nearby 523. 2nm

    對復合鑲嵌薄膜光致發光特性的研究發現，在450沉積未經過退火處理的薄膜樣品中觀察到室溫光致發光現象，在523 . 2nm附近有一強的發光譜帶。
  16. The main topic of this thesis is to deposit the lacamno3 films using the pulsed laser deposition ( pld ) technique, and to improve the properties of the films through a serials of processes including the post annealing treatments. at last, the relation between the physical properties and the film making processes of the materials are discussed and some possible applications explored

    本論文的任務就是利用脈沖激光沉積lacamno _ 3薄膜，並通過退火等一系列工藝處理提高薄膜性質，最終製作測輻射熱儀的敏感元件，同時也對材料的物性展開討論，以探尋更多的應用。
  17. The size variation of annealed nanoparticles was studied with the treatment temperature. the result shows that, for the size of 11nm zns nanoparticles, they grow up dramatically when the treatment temperature exceeding 600, and have been 3 - 5 um when the treatment temperature increasing to 900

    藉助x射線衍射技術和掃描隧道電鏡等實驗手段，系統研究了zns納米晶經過退火處理后尺寸隨溫度的變化關系，給出了顆粒尺寸隨處理溫度急劇增大的溫度范圍，從能量的角度解釋了退火處理中顆粒長大的原因。
  18. By comparable investigation, two luminescence mechanisms can explain the different variety of pl intensity of origin and annealed samples and are dominant mechanisms separately in unanneal and anneal course

    經過退火處理后，在相同波長的光激發下發光強度逐漸增強，峰型逐漸變好，發光譜帶的半峰寬也變窄。
  19. The best annealing condition of the zno films grown by electron beam evaporation technique was achieved

    採用電子束蒸發的方法在si襯底上生長zno薄膜，通過退火實驗，得到了最佳的退火條件。
  20. The result shows that the emission of the former is far weaker than that of the latter. in addition, a emission band centered at 520nm was observed in all the annealed nanoparticles while it did not appear all the time in the commercial bulk powders

    經過退火處理后，納米晶樣品發射光譜中出現了中心位於520nm的發射帶，而這一發射帶在經過相同退火處理得到的商用熒光粉樣品中始終沒有出現，我們探討了其起源。
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