量子點量子阱 的英文怎麼說

中文拼音 [liángzidiǎnliángzijǐng]
量子點量子阱 英文
qdqw
  • 量 : 量動1. （度量） measure 2. （估量） estimate; size up
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 點 : Ⅰ名詞1 （液體的小滴） drop （of liquid） 2 （細小的痕跡） spot; dot; speck 3 （漢字的筆畫「、」）...
  • 阱 : 名詞（捕野獸用的陷坑） trap; pitfall; pit
  • 量子 : quantum; gion
  1. If the velocity of atoms is near to zero, the light for ces will tend to confine the atoms near to nodes and antinodes. the stability depends on the magnitude of the negative slope of the light force, the depth of the potential well and the momentum diffusion coefficient. it is important to select the parameters, e. g

    如果通過激光冷卻能使原子速度降至很小甚至為零，光壓力的作用將使原子被較穩定地囚禁于激光駐波場的節點和反節點處，其穩定程度取決于該處光壓力曲線負斜率的大小、對應勢能的勢阱深度以及動量擴散系數的大小，因此，如何在實驗中合理選擇激光強度、失諧量等顯得尤為關鍵。
  2. The high - power semiconductor quantum well ( qw ) laser is a kind of luminescence device with superior performance, it has longe - lived, low threshold current density, high efficiency, high luminosity and excellent monochromatic, coherence, directionality, etc. the high - power semiconductor laser is widely applied to the fields, such as military, industrial machining, communication, information processing, medical treatment, etc. the material ' s epitaxy is the foundation of the whole laser ' s fabricating, and it has important influence on the optics and electricity performance about the laser

    大功率半導體量子阱激光器是一種性能優越的發光器件，具有壽命長、閾值電流密度低、效率高、亮度高以及良好的單色性、相干性、方向性等特點，廣泛應用於軍事、工業加工、通信及信息處理、醫療保健等領域。材料的外延生長是整個激光器器件製作的基礎，對器件的光學和電學性能有著重要的影響，生長不出優質的材料體系，獲得高性能的器件就無從談起，因此，材料的外延生長便成為了整個半導體激光器製作過程之中的重中之重。
  3. Considering that r limit to a small area we adopt lattice model. in the model, cell center form space lattice. quantum state of center of mass of molecule is corresponding to the particle in potential trap. secondly, hamiltonian operator is taken into account

    再考慮到r |局限在空間一個小區域內，可採用格胞模型，格胞中心構成空間點陣，分子質心r |的量子態相當于諧振子勢阱中的質點。
  4. The inherent defects and limitations of the conventional gaas / algaas qwips, which are lead by the structure, were analyzed

    分析了常規gaas algaas量子阱紅外探測器由於其結構所帶來的固有缺點及限制。
  5. 3. the principle of the novel gaas / algaas qwips and the strongpoints of the new structure were elucidated in detail

    詳細敘述了新型gaas algaas量子阱紅外探測器的工作原理及這種新型結構所帶來的諸多優點。
  6. Gaas / algaas quantum well photodetectors ( qwips ) are new type devices and progressed rapidly in recent 20 years. qwips utilizing intersubband absorption between gallium arsenide ( gaas ) well and aluminum gallium arsenide ( alxga1 _ xas ) barriers were perfected. therefore, the ability to accurately control the band structure and hence the spectral response, as well as both established technology for growing and processing gaas optical devices and commercially available large area vlsi gaas ic ' s, makes gaas / algaas qwips attractive devices for use in very large focal plane arrays ( fpas ), especially available in the range of long wavelength 8 - 12 urn

    Gaas algaas量子阱紅外探測器（ qwips ）是近二十年來迅速發展起來的一種新型紅外探測器，它成功地利用了gaas勢阱和al _ xga _ （ 1 - x ） as勢壘之間的子帶間吸收，使之具有能帶結構可精確設計從而獲得指定光譜響應的特點，加之成熟的材料生長技術、器件工藝，以及商業上可獲得大面積的vlsigaas集成電路，使得gaas algaasqwips尤其適宜製作8 12 m長波范圍的大面陣探測器。
  7. The active aspects include ion traps, nuclear magnetic resonance ( nmr ) technique, quantum electrodynamics cavities, josephons junctions, and semiconductors quantum dots

    主要包括離子阱、核磁共振、量子電動力學腔、約瑟夫結和半導體量子點。
  8. In this thesis we discuss these three aspects in detail and our main research work is outlined as follows : in section 2 we first give a definition of entanglement and illustrate some distinctive qualities of entangled states, then explain how to describe entanglement of multi - particle quantum state. in section 3 we show many existing different schemes for preparation of entangled states by spontaneous parametric down conversation, cavity quantum electrodynamics and iron traps, moreover we present new schemes to prepare multi - atom entangled states as well as multi - cavity entangled states

    在第二章中我們將給出糾纏態的定義和度量，研究糾纏態的一些特性，第三章中我們將系統介紹目前理論上利用自發參量下轉換，通過腔量子電動力學和離子阱制備糾纏態的各種方案，以及在實驗上的進展，並在論文中重點提出了利用原子和腔場相互作用來制備多原子糾纏態和多腔場糾纏態的方案。
  9. The wavelength of pump light in white light mode is 400nm. 2. the excitonic tunneling from cdznse qw to cdse quantum dots under resonant excitation was investigated using femtosecond pump - probe technology on the cdznse quantum well / cdse quantum dots structure

    用飛秒脈沖泵浦-探測方法研究了cdse量子點znse cdznse量子阱結構在對cdznse量子阱的激子共振激發條件下激子在量子阱與量子點之間的隧穿。
  10. In the present thesis, znse, znte and their quantum well ( qw ) structures on si substrates with zno as buffer layer by low pressure metal - organic chemical vapor deposition ( lp - mocvd ) technique were prepared. zno is selected as the buffer layer for it has many similarities with the oxide layer on the surface of si wafer. all important experimental results and conclusions presented in this thesis are summarized as follows : 1

    本文中，我們利用zno與si襯底上氧化層? sio _ x有很好的浸潤性這一特點，採用zno作為緩沖層，用低壓-金屬有機物氣相沉積（ lp - mocvd ）設備在si襯底上生長znse和znte薄膜以及zncdse znse和zncdte znte量子阱結構，並對其發光特性進行了研究，獲得的主要研究結果如下： 1 、在si襯底上獲得了較高質量的zno薄膜。
  11. Based on these analyses, we see that the si - based quantum - dot laser has higher gain and differential gain, its threshold current is more lower and the threshold current is insensitive to temperature when si - based quantum - dot laser compares with normal semiconductor laser and quantum - well laser

    分析表明，與普通激光器和量子阱激光器相比， si基量子點激光器有更高的增益和微分增益，閾值電流更低，閾值電流對溫度更不敏感。
  12. The lifetime and mechanics of pl are researched by fl920 time resolved measurement system. it indicated that pl lifetime of quantum dots is greater than those of bulk material and quantum well

    利用fl920時間分辨譜測試系統研究了量子點的發光緣由及壽命，發現量子點的發光壽命大於體材料及量子阱結構材料，並且受溫度影響較小
  13. From the exact expression of the field, we obtain a multipole polynomial expansion, and under the paraxial condition we furthermore obtain the approximate expression. the loffe trap, consisting of two coils with parallel currents and four straight conductors with currents in alternating directions, is one of the most important traps. we specially study the field structure of it by using both the exact expression and a multipole polynomial expansion that facilitates studies of classical or quantum orbits. if the region near the origin is of interest, we may obtain a simple expression of the field and this configuration may be called idealized loffe trap

    若只討論阱中的近原點區域時，阱中的磁場可以呈現出一種簡潔的形式，人們把它稱為理想ioffe阱。磁矩反平行於磁場的中性粒子在阱中與磁場發生相互作用，藉助相互作用勢，可以獲得粒子在阱中的經典運動方程。在一定的近似條件下，我們可以採用逐次近似的方法，使方程簡化，其中三個分量式中關于z的方程比較容易求解，而關于x 、 y的方程則演化為我們熟悉的馬丟方程的形式。
  14. The schemes which are puted forward at ' present have mainly made use of the interaction of atoms and optical - cavity, cold trapped ion, electronics spin or nuclear magnetic resonance, quantum dots manipulation and superconducting quantum interference etc.

    目前已經提出的方案主要利用了原子和光腔相互作用、冷阱束縛離子、電子或核自旋共振、量子點操縱、超導量子干涉等。
  15. The orientation state of the molecule can be described by angular momentum eigenstate of the molecule rotating around its long axis ; the state of the molecule center - of - mass can be described by energy eigenstate of the particle in the harmonic well potential

    ）和分子質心位矢（ ? ） 。分子取向態可用分子繞長軸自轉角動量本徵態描述；分子質心態可用質點在諧振子勢阱中的能量本徵態來描述。
  16. We found that the exciton transference between cdznse quantum well and cdse quantum dots is dominated by exciton tunneling at a thin znse barrier layer

    在薄隔離層時，量子阱與量子點之間的激子轉移過程由激子隧穿過程決定。
  17. 4. photolumescence and micro - photoluminscence of cdznse qw / znse / cdse qds with different znse barrier thickness was studied to investigate the influence of tunneling on excitonic combination in quantum well and quantum dots. we studied the temperature dependent of the excitonic recombination

    通過cdse量子點znse cdznse量子阱結構在不同壘層厚度情況下的發射譜和變溫激子發射譜，研究了激子隧穿過程對量子點和量子阱中激子復合的影響。
  18. Recently the properties of neutral shallow donor center d0 and negative shallow donor center d - in quantum wells with magnetic field have received a great deal of attention [ 1, 2 ]

    在量子阱中加磁場后的d ~ 0中心和d ~ -中心的電子結構和性質是人們近年來研究的焦點。
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