閾壓力 的英文怎麼說

中文拼音 [yùyālì]
閾壓力 英文
threshold pressure
  • 閾 : 名詞1. [書面語] （門坎兒） threshold; doorsill2. （界限; 范圍） threshold
  • 壓 : 壓構詞成分。
  • 力 : Ⅰ名1 （力量; 能力） power; strength; ability; capacity 2 [物理學] （改變物體運動狀態的作用） forc...
  1. Then, an implicit expression for electron density and a closed form of threshold voltage are presented fully comprising quantum mechanical ( qm ) effects

    給出了電子密度的隱式表達式和閾電壓的顯式表達式，它們都充分考慮了量子力學效應。
  2. If grazing stress reached a threshold, genetic diversity of population emerged a transition point, with genetic diversity increased

    當放牧壓力達到一個閾值時種群的遺傳多樣性有一個躍變點，遺傳多樣性又有增加的趨勢。
  3. Acoustics - reference zero for the calibration of audiometric equipment - reference equivalent threshold sound pressure levels for pure tones and circumaural earphones

    聲學.校正聽力設備的基準零級.純音和環繞耳機的基準等效閾聲壓級
  4. Acoustics - reference zero for the calibration of audiometric equipment - part 8 : reference equivalent threshold sound pressure levels for pure tones and circumaural earphones

    聲學.校正聽力設備的基準零級.第8部分:純音和環繞耳機的基準等效閾聲壓級
  5. The results show that at a given substrate temperature, there is a compressive stress threshold, below which cbn phase is thermodynamically stable and p above which hexagonal bn ( hbn ) phase is thermodynamically stable

    結果表明，在給定的襯底溫度下，存在一個壓應力閾值，壓應力低於此值時立方相是熱力學穩定相，壓應力高於此值時，六角相是熱力學穩定相。
  6. Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet

    基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析，對所得結果從器件內部物理機制上進行了討論，最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深（凹槽深度）的增大，槽柵器件的閾值電壓升高，亞閾斜率退化，漏極驅動能力減弱，器件短溝道效應的抑制更為有效，抗熱載流子性能的提高較大，且器件的漏極驅動能力的退化要比改變結深小.因此，改變槽深加大負結深更有利於器件性能的提高
  7. This paper analyzes the percolation mechanism and characteristics of gas under low - velocity percolation state in terms of slippage effect and threshold pressure effect by using molecular dynamics, thermodynamics and percolation mechanics in order to understand the practical reason of low - velocity non - darcy percolation

    摘要為明確氣體在低速滲流狀態下的滲流規律以及產生低速非達西滲流的實質性原因，運用分子動力學、熱力學和滲流力學等相關知識，基於滑脫效應和閾壓效應兩方面分析了氣體在低速滲流狀態下的滲流機理及滲流特徵。
  8. However, it becomes independent on channel depth in strong inversion region, which is in accordance with numerical analysis

    結果進一步顯示，只考慮方形勢阱的量子力學結果，略高估計了閾電壓，且低估了電子密度。
  9. Erosion damage decreases rock load area, after defining damage variable, the damage stress in rock can be calculated by the method bring forward by lemaitre conveniently. for surrounding rock of a deep buried tunnel under the condition of drained, its seepage character is not only controlled by the high stress in rock, but also influenced by the development of erosion damage. in the whole course of rock " s deformation and failure, its seepage character decreases with the increment of stress in elastic stage, while " increases with the development of failure

    巖樣中全應力?應變三軸滲透試驗過程中的典型表現為隨著應力的增加，巖體內的空隙和裂紋受載閉合，滲透性降低，應力達到一定閾西南交通大學鷹士研究生學位論文第11頁值后，巖體內部裂紋發生擴展和歸並，滲透性增強；同樣，地下水的動、靜壓力作用對裂紋的擴展和歸並也起著促進作用。
  10. The primary function of reactor protection system is to protect the integrity of the three nuclear safety barriers, namely, fuel cladding, primary pressure boundary and containment. when the certain safety limits, determined by the accident studies, are exceeded, the reactor protection system will give the protection signals of reactor trip and / or safeguard actuations, and then the reactor trip system and / or the engineered safety features are actuated

    反應堆保護系統的功能主要是保護三道核安全屏障（燃料包殼、一迴路壓力邊界和安全殼）的完整性，當運行參數達到危及三道屏障完整性的閾值時，保護系統動作觸發反應堆緊急停堆和啟動專設安全設施。
  11. Under a unified model of carrier transport over trap state established potential barrier at drain side, device degradation behavior such as asymmetric on - current recovery and threshold voltage degradation can be understood

    我們通過載流子在漏極附加陷阱態勢壘的輸運模型，解釋了器件在應力后出現的閾值電壓的退化現象和非對稱性開態電流恢復現象。
  12. Many unusual phenomena near the percolation threshold caused by random pore removal or blockage is found. first, the grid pressure distribution is anomalous ; secondly, the dispersion is much slowly than in euclidean space

    模擬中發現：在滲流閾值附近，確實存在著反常彌散和優勢通道現象，網格中的壓力分佈也和全部聯通時完全不一樣。
  13. Acoustics - reference zero for the calibration of audiometric equipment - part 1 : reference equivalent threshold sound pressure levels for pure tones and supra - aural earphones

    聲學.聽力測定儀器的校準用基準0 .第1部分:純音和超聲耳機用基準等效閾聲壓級
  14. Acoustics - reference zero for the calibration of audiometric equipment - part 5 : reference equivalent threshold sound pressure levels for pure tones in the frequency range 8 khz to 16 khz

    聲學.聽力測定儀器的校準用基準0 .第5部分:頻率范圍為8 khz至16 khz的純音用基準等效聽閾聲壓級
  15. The author ' s main contributions are outlined as following : first, the roles of hot electron and hole in dielectric breakdown of ultra - thin gate oxides have been quantitatively investigated by separately controlling the amounts of hot electron and hot hole injection using substrate hot hole ( shh ) injection method. the changes of threshold voltage have been discussed under different stress conditions

    主要研究結果如下：首先，利用襯底熱空穴（ shh ）注入技術分別控制注入到超薄柵氧化層中的熱電子和空穴的數量，定量研究了熱電子和空穴注入對超薄柵氧化層擊穿的影響，討論了不同應力條件下的閾值電壓變化。
  16. After structure design aimed to high transconductance, parameters of device structure are modified in detail. the simulation results of soi nmos with strained si channel show great enhancements in drain current, effective mobility ( 74 % ) and transconductance ( 50 % ) beyond conventional bulk si soi nmosfet. the strained - soi nmosfet fabrication process is proposed with lt - si ( low temperature - si ) technology for relaxed sige layer and simox technology for buried oxide

    其次，根據器件參量對閾值電壓和輸出特性的影響，以提高器件的跨導和電流驅動能力為目的設計了strained - soimosfet器件結構，詳細分析柵極類型和柵氧化層厚度、應變硅層厚度、 ge組分、埋氧層深度和厚度以及摻雜濃度的取值，對器件進行優化設計。
  17. Acoustics - reference zero for the calibration of audiometric equipment - reference equivalent threshold sound pressure levels for pure tones in the frequency range 8 khz to 16 khz

    聲學.聽力測定設備校準的標準參考零點.頻率范圍為8khz至16khz之間的純音用參考等效閾聲壓級
  18. Three connected comparators each with a comparison potentiometer enable the setting of three different switching thresholds, which correspond to a certain loading of the connected strain gauge force transducers

    三個相連的比較電路每一個都有一個比較電壓計，可以根據所連接的應變力傳感器的荷載設定三個不同的開關閾值。
  19. Locks option is a value other than 0, then the lock escalation threshold is 40 percent or less if there is a memory pressure of the value of the locks option

    選項設置為非0值，則鎖升級閾值是locks選項的值的40 % （或者更低，如果存在內存不足的壓力） 。
  20. At room temperature the compressive stress threshold is calculated to be 9. 5 gpa

    在室溫時，該壓應力閾值為9 . 5gpa 。
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