閾效應 的英文怎麼說
中文拼音 [yùxiàoyīng]
閾效應
英文
threshold effect-
Study on adults ' subliminal affective priming effect
成人閾下情緒啟動效應實驗研究The electronic temperature, intensities of all lines and continuous spectra gradually increased with the increment of laser energy, and they got to maximum at different laser energy. our results of copper and aluminum show that there are possibly different thresholds of laser energy to electronic temperature and intensities of emission spectra of laser ablated plasma. at the different environmental gas pressure, spatial emission intensity distribution is explained by the competition among " heat reservoir effect ", " confined effect " and " s hadow effect "
認為cu等離子體羽的發光機制是由電子與粒子的碰撞傳能、電子與離子的復合形成的；隨激光能量的增加， cu等離子體特徵輻射（分立譜） 、連續背景輻射（連續譜） 、電子溫度都出現最大值；結合對al的實驗結果說明：激光燒蝕金屬產生的等離子體，其特徵輻射、連續輻射、電子溫度可能都存在一定的能量閾值；背景氣壓對激光燒蝕等離子體譜線的影響，其機理可以認為是「熱庫效應」 、 「約束效應」及「陰影效應」相互競爭的綜合結果。Heredity modes of 6 traits were studied by analysis of population genetics, by the method of family combination analysis, by the methods of proband ' s sib analysis, segregation analysis, the threshold model of polygenes, and analysis of typical family trees, according to the data of the 72 families. the relative importance between genetic and environmental effect on each character was evaluated by comparing the coherence of twins. gene frequencies of 5 genetic characters, calculated from han group in huhhot, were compared with other groups by u - test so as to study the population or nationality difference in heredity
採用群體遺傳學分析、家系組合分析法、先證者同胞法、分離分析法及多基因閾值模式分析方法對所得家系資料進行了統計學分析，結合家繫系譜分析探討了上述6項特徵的遺傳方式；通過雙生子一致率的比較，對上述特徵的遺傳與環境效應的相對重要性進行了評價；計算了呼和浩特市漢族群體5對遺傳性狀的基因頻率，採用u檢驗方法與相關文獻報道的其他群體進行了比較，探討了不同種族間或民族間的遺傳差異性。Abstract : a new method for determining proximity parameters, and in electron - beam lithography is introduced on the assumption that the point exposure spread function is composed of two gaussians. a single line is used as test pattern to determine proximity effect parameters and the normalization approach is adopted in experimental data transaction in order to eliminate the need of measuring exposure clearing dose of the resist. furthermore, the parameters acquired by this method are successfully used for proximity effect correction in electron - beam lithography on the same experimental conditions
文摘:在電子散射能量沉積為雙高斯分佈的前提下，提出了一種提取電子束光刻中電子散射參數，和的新方法.該方法使用單線條作為測試圖形.為了避免測定光刻膠的顯影閾值，在實驗數據處理中使用歸一化方法.此外，用此方法提取的電子散射參數被成功地用於相同實驗條件下的電子束臨近效應校正Then, an implicit expression for electron density and a closed form of threshold voltage are presented fully comprising quantum mechanical ( qm ) effects
給出了電子密度的隱式表達式和閾電壓的顯式表達式，它們都充分考慮了量子力學效應。Secondly, nonlinear threshold of two - dimensional rt instability was analyzed in planar and cylindrical and spherical geometries. density amplitude was defined relating to instable interface and formulae of nonlinear threshold values for rt instability in three geometries were given, then the lared - s code was used to simulate two - dimensional rt instability in three geometries and simulation results agreed well with the formulae
其次，討論了二維平面、柱和球幾何中rt不穩定性發生非線性偏離的閾值問題，給出了三種幾何中密度擾動振幅的非線性閉值公式，並且用lared一s程序進行了檢驗，計算結果表明柱和球幾何中的模藕合機制與平面幾何不同，存在幾何效應的影響。The subliminal affective priming effect
閾下情緒啟動效應Standard test method for separating an ionizing radiation - induced mosfet threshold voltage shift into components due to oxide trapped holes and interface states using the subthreshold current - voltage characteristics
利用亞閾值安伏特性測定由於氧化空穴和界面態產生的電離輻射感應金屬氧化物半導體場效應晶體管閾電壓偏移分量的標準試驗方法The difference between supraliminal and subliminal perception : evidences from stroop effects
閾下知覺和隱性廣告的作用及啟動效應研究In order to reduce the musical residual noise and the background noise, a speech enhancement method based on masking properties of the human auditory system is described. this method uses bark wavelet packet transform to simulate the frequency feature of human auditory model to get the threshold
本文以最大限度減少殘留噪聲和背景噪聲為目的，採用bark子波分析的方法模擬人耳基底膜的頻率分析特性來進行語音增強，重點進行模擬人耳聽覺掩蔽效應來確定除噪閾值的研究。Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet
基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析，對所得結果從器件內部物理機制上進行了討論，最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深（凹槽深度）的增大，槽柵器件的閾值電壓升高，亞閾斜率退化，漏極驅動能力減弱，器件短溝道效應的抑制更為有效，抗熱載流子性能的提高較大，且器件的漏極驅動能力的退化要比改變結深小.因此，改變槽深加大負結深更有利於器件性能的提高The result of experimentation on coupling effect of water and fertilizers on spring corn in the three gorges reservoir area indicate that water stresslead the effect low of highness and lai, and the most effect is made in shooting stage ; it has a significant positive correlation between the yield of corn and biomass, and hasn ' t none significant positive correlation between the yield of corn and the weight of roots ; the coupling effect of water and n is significant, but the coupling effect of water and k is not significant, the maximum yield of corn condition fitting - water and medium n, corn absorbs n has a threshold value during the growth, and using superfluous n is able to prick up soil drought and crop drought ; water is the leading factor which effects the yield of corn, next is n and k
摘要三峽庫區春玉米盆栽水肥耦合試驗研究結果表明，水分脅迫導致玉米株高和葉面積指數降低，以拔節期受到影響最大；玉米產量與生物量呈顯著正相關關系，產量與根重無顯著正相關關系；水氮耦合效應顯著，適宜水分和中氮處理下玉米的產量最高，玉米生長發育對氮肥的吸收存在一定的閾值，過多施用氮肥會加劇土壤乾旱和作物乾旱，水和鉀耦合效應對玉米產量影響不顯著；水分是影響玉米產量的主導因素，其次是氮效應和鉀效應。Effect of beam diameter for high accuracy laser damage testing
高精度損傷閾值測量中測試口徑效應研究Among those nonlinear effects, stimulated brillouin scattering has the worst effects on the fiber hydrophone system due to its low threshold and it produces a new light wave which is different from the incident light in frequency. this dissertation discusses the physical mechanism and quantum explanation of sbs in fiber
在眾多非線性效應中，由於受激布里淵散射（ stimulatedbrillouinscattering ）效應的閾值最低，且產生了與入射光場不同頻率的新的光場，故對光纖水聽器系統而言，影響最大的即是受激布里淵散射效應。Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically
在此基礎上，對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究，著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移（ vth和vit 、 vot ）與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。Threshold of energy of shock wave burst in treating cholelithiasis with shock wave
沖擊波體內膽結石爆破效應的沖擊能量閾值This paper analyzes the percolation mechanism and characteristics of gas under low - velocity percolation state in terms of slippage effect and threshold pressure effect by using molecular dynamics, thermodynamics and percolation mechanics in order to understand the practical reason of low - velocity non - darcy percolation
摘要為明確氣體在低速滲流狀態下的滲流規律以及產生低速非達西滲流的實質性原因，運用分子動力學、熱力學和滲流力學等相關知識，基於滑脫效應和閾壓效應兩方面分析了氣體在低速滲流狀態下的滲流機理及滲流特徵。We also studied some characteristics of sidagating effect using mesfet fabricated in planar boron implanted process including photosensitive, hysteresis, influence of sidegating effect on mesfet threshold voltage, influence of drain - source voltage on sidegating threshold voltage, influence of exchanging drain and source electrode on sidegating threshold voltage, relation between sidegating threshold voltage and the distance between side - gate and mesfet, relation between sidegating effect and floating gate, and so on
本文還採用平面選擇離子注入隔離工藝，開展了旁柵效應的光敏特性、遲滯現象、旁柵效應對mesfet閾值電壓的影響、 mesfet漏源電壓對旁柵閾值電壓的影響、漏源交換對旁柵閾值電壓的影響、旁柵閾值電壓與旁柵距的關系、旁柵效應與浮柵的關系等研究。Especially in cmos n - well integrated circuits technology, the body effect will cause the nmos threshold voltage following the pumping voltage to be lifted and then the highest pumping voltage will be limited
特別是在n阱集成電路工藝，體效應使得每一階nmos管的閾值電壓都不斷抬升，以至於電荷泵的最高輸出電壓受到限制。The degradation of underliminal affective priming effect and its response competition model
閾下情緒啟動效應的衰退和反應競爭模型分享友人