阻電元素 的英文怎麼說
中文拼音 [zǔdiànyuánsù]
阻電元素
英文
electronegative element-
In recent years, the colossal magneto - resistance effect in rare - earth manganite perovskites of the type lni. xaxmno3 ( where ln is rear - earth irons la2 +, nd2 +, p2 + ; a is alkaline earth iron ca2 +, sr2 +, ba2 + ) has attract considerable attention in scientific studies due to its potential application. however, the poor temperature dependence of mr and the low - temperature mr effect and the ideal mr only in high field severely limit their practical utility. in this work, we prepared manganite perovskite lai - xsrxmno3 and soft - magnetic ferrite materials fe2o3 and ( ni, zn ) fe2o4 by using sol - gel method separately
近些年來，人們發現在鈣鈦礦錳氧化物ln _ （ 1 - x ） axmno _ 3 （ ln為la ， nd ， pr等稀土金屬元素； a為ca ， sr ， ba等堿土金屬元素）中具有磁電阻（ magnetoresistance ）效應，由於它在磁記錄，磁傳感器方面具有廣泛的應用前景，同時也向傳統的磁記錄材料提出了挑戰，因而引起了物理學界的廣泛關注。Results showed that unilateral transection of the middle midbrain above the ventral tegmentum did not block the synchronized bursts on both sides ; however, the synchronized bursts disappeared after unilateral transection through the middle of the medial hypothalamus
結果顯示:在腹側被蓋以上橫向切斷單側中腦中部，不能阻斷雙側催產素神經元的同步化爆發放電;但是單側下丘腦中間內側部橫切則可阻斷這種同步化爆發放電。Due to the importance of the accuracy of the time - domain impedance matrix elements, the techniques by which treating of the singular integrals and near singular integrals arose from the tdie - mom solving process are analyzed in detail, and these techniques are utilized to solve the tdie. in the end, using triangle patches discretizing arbitrarily 3 - d dielectric objects and metal - nonmetal composite objects surface and utilizing spatial rwg and temporal triangular bases, the tdie are solved by mot algorithm
最後，分別對三維介質目標、金屬非金屬組合目標散射體表面用三角貼片離散，並在空間上採用rwg基函數，在時間上採用三角型時間基函數、利用阻抗元素的精確演算法計算出阻抗矩陣，再運用mot法分別求解了介質體目標，金屬非金屬組合目標的時域積分方程，並分析了金屬非金屬組合目標分界面上的等效電流與等效磁流的特性。Besides, scan rate and cycle period also affect the result ; co - deposition of dualistic oxide is a focus of research, as an element in the same group, ir is selected. deposition rate of composition is decreased by the adding of ir composition, and when the proportion of ir exceeded 50 %, composition procession can be ceased. but cooperation of ir and ru oxide can highly increase the specific capacitance of active material ; annealing treatment under a certain temperature can help to change the hydrate ru composition into mixture state ru oxide, accordingly increase the stabilization of active material
研究表明:電解液的配製過程中，氯化釕濃度、溶液ph值、陳化時間、溶液溫度對電鍍效果均有影響，其中溶液ph值是最主要的影響因素;在儀器的使用條件探索中，理論結合實驗確定了本電鍍液體系循環伏安電勢窗的理想范圍，並發現循環伏安掃描速度和掃描周期對電鍍結果也有較大影響;混合氧化物的共沉澱是目前研究熱點，在此選用與釕同一族的銥作為共沉澱元素，銥的加入會阻礙氧化物的沉積速度，銥的比例超過50 %會使沉積作用停止，但是二元氧化物的協同作用使沉積的活性物質比容量大大提高;一定溫度下退火后處理作用會使水合釕化物轉變成混合價態的氧化釕，從而提高活性物質的穩定性。So in one hand it requires the wafer ' s diameter to be more large in order to enhance the productivity, and on the other hand it puts forward more strict requirement about the crystal perfection and electricity character. especially the electronic character and the equality of micro - area in the crystal wafer has become the key factor to determine whether the device can be made on it or not. so the resistivity measurement of micro - area become one most important procedure in the chip machining. to ensure the produce quality of chip and the perfect performance of final production, the four - probe testing technology need to be deeply studied
圖形日益微細化，電路尺寸不斷縮小，目前ic製造以8英寸、 0 . 13 m為主，預計在2007年左右將以12英寸、 65nm為主，這一方面要求圓片直徑不斷增大以提高生產率，另一方面對晶體的完美性、機械及電特性也提出了更為嚴格的要求。特別是微區的電學特性及其均勻性已經成為決定將來器件性能優劣的關鍵因素。因此，微區電阻率的測試成為晶元加工之中的重要工序。Secondly, we measured the electrical properties of the ion - implanted samples by hall method ( square carrier concentration, square resistance and carrier mobility ). after comparing and analyzing, we can know that the electrical properties were affected by the difference of mn dose, the implantation of c and the annealing temperature
其次，利用霍爾測試方法測量了每種離子注入樣品的電性質（方塊載流子濃度、方塊電阻及載流子遷移率） ，通過比較分析了解到mn元素注入劑量、 c元素的注入以及退火溫度的不同，都會對樣品的電性質產生影響。Experimental results revealed that the carrier mobility increased with increasing of the annealing temperature, in the range of the annealing temperature from 650 ? to 850 ?, which implied that the crystal lattice structure was damaged by ion implantation and restored after annealing. furthermore, the square carrier concentration decreased, and the square resistance of the samples implanted by mn + and c increased with the raising of annealing temperature. these results indicated that the second phase such as mnga, mnas ferromagnets was formed by more mn + ions with increasing of the ( gaas ) annealing temperature, so the mn + ions which can provide carriers decreased
由實驗結果可以知道在退火溫度為650 850范圍內，樣品的載流子遷移率隨著退火溫度的提高呈上升趨勢，說明雜質元素的注入對樣品造成晶格損傷，但退火對這些損傷具有修復作用；此外，隨著退火溫度的上升，樣品的方塊載流子濃度不斷下降，加c樣品的方塊電阻不斷上升，這都是因為隨著退火溫度的提高，摻入的mn ~ +離子不再提供載流子，而是形成了mnga 、 mnas等磁性第二相。The thesis mainly investigated the bati _ 4o _ 9 ( bt _ 4 ), which has the lowest dielectric loss in ba - ti system, and ( ba, sr ) tio _ 3, the a position substitute compound of batio _ 3. the dielectric properties of bt _ 4 / bst with different preparation way and different elements doping were investigated. a archimedes method, xrd, sem, impedance analyzer, network analyzer and hakki - coleman method were used to investigate the density, phase formation, microstructure, dielectric properties and doping mechanisms
本論文以在ba - ti系中具有最低介電損耗的bati _ 4o _ 9 （ bt _ 4 ）高頻介質陶瓷和batio _ 3a位sr取代而得的（ ba ， sr ） tio _ 3 （ bst ）高頻介質陶瓷作為研究對象，對不同粉體制備方法制備的bt _ 4 / bst高頻電介質材料進行不同元素的摻雜，運用阿基米德方法， x射線衍射分析儀，掃描電子顯微鏡和阻抗分析儀，網路分析儀， hakki - coleman法等方法手段和測試儀器測試燒成樣品的密度，相組成情況，微觀結構和介電性能，探討造成介電性能起伏的形成機理。In this topic, the error characteristic of resistance voltage sensor was analyzed in theory, by using electric circuit analysis, the reasons which affected its error were gotten. based on theory analyses, initial structure was designed. then by using fem ( finite element method ) of simple resonance field, several structures electromagnetic field was calculated, and their amplitude errors, phase errors, maximum of electric field intensity and frequency characteristic of amplitude error were contrasted
本文從理論上分析了電阻式電壓傳感器的誤差，用電路分析法定性的研究了影響電阻分壓器誤差的因素；在理論分析的基礎上進行了電阻分壓器結構的初步設計；基於該設計，利用簡諧場的有限元方法進行了場的計算，比較了幾種結構方案的幅值誤差、相角誤差、最大場強值及其幅值誤差的頻率特性，從而得到一種最優方案；製作了分壓器樣機，並在本實驗室進行了實驗；最後，對電子電路部分進行了初步設計，並提出了抗干擾的措施。分享友人