雜質導電 的英文怎麼說

中文拼音 [zázhídǎodiàn]
雜質導電 英文
extrinsic conduction
  • 雜 : Ⅰ形容詞（多種多樣的; 混雜的） miscellaneous; varied; sundry; mixed Ⅱ動詞（混合在一起; 攙雜） mix; blend; mingle
  • 質 : Ⅰ名詞1 （性質; 本質） nature; character; essence 2 （質量） quality 3 （物質） matter; substance;...
  • 導 : 動詞1. （引導） lead; guide 2. （傳導） transmit; conduct 3. （開導） instruct; teach; give guidance to
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 雜質 : [固體物理] impurity; foreign substance; impurity substance; inclusion; foreign matter
  1. The buildup of impurities often results in defective plating.

    雜質的積累經常導致不良的電鍍。
  2. In order to verify the effectiveness of steep - front impulse voltage test in finding the internal faults of composite insulator, some insulators with faults, including conductive channel, semi - conductive channels, airy channel, partial little air bubble that occur separately at different place, are modeled. steep - front wave impulse voltage test is made for these faulty insulator and normal insulator

    為了檢驗陡波試驗對于發現合成絕緣子內部故障的有效性，分別模擬了絕緣子內部不同部位有導電性、半導電性通道，小氣泡，金屬雜質，長氣泡以及芯棒與護套間不粘連故障的絕緣子，並從三維靜電場計算和用不同陡度的陡波試驗兩個方面進行了驗證。
  3. But the grain growth, grain semiconduction and grain boundary insulation were influenced by many factors, such as the type and contents of dopants, sintering temperature and so on. therefore, in this thesis the effect of the restore sintering temperature, the oxygenize temperature, the donor and acceptor dopant on the dielectric and varistor properties of devices were studied. with sem, the microstructure of srtio3 - based double function ceramic was analyzed

    而晶粒生長、晶粒半導化和晶界絕緣化受到多種因素的影響，諸如雜質的種類和含量、燒成溫度等，因此本論文研究了還原燒成溫度、中溫氧化溫度、施主和受主摻雜等對srtio _ 3基陶瓷的壓敏和介電性能的影響，並藉助于sem分析對srtio _ 3基雙功能陶瓷的微觀結構進行了分析。
  4. Some cubic perovskites are good cases in point such as srtio3 and ktao3. experimental results show that when ba2 + and li + are doped into the above materials respectively and at the same time the impurity content is higher than their critical concentration, the impurity induced ferroe lectric phase transition occurs

    Srtio _ 3和ktao _ 3是典型的量子順電體，實驗表明當兩者分別摻雜ba ~ （ 2 + ）和li ~ +且雜質濃度超過各自的臨界濃度時，順電相不再穩定，出現由雜質導致的鐵電相變。
  5. In the model of on - resistance, we have considered the lateral doping distribution in ldmos channel and vertical doping distribution in drift region. then we provide the explicit dependence between on - resistance and doping distribution parameter

    導通電阻模型考慮了ldmos的溝道橫向雜質分佈和漂移區雜質縱向分佈的結構特點，給出了導通電阻與雜質分佈參數的明確函數關系。
  6. The electrical conductance of the gold / polymer composite films was tunable, and a low resistivity of the order of 10 ~ ( - 4 ) cm was yield. the conducting mechanism was not determined, perhaps the tunnel effect and the foreign - substance - electron - transfer should be considered

    聚合物金納米粒子復合薄膜的電阻率可調，電阻率最低可達10 ~ （ - 4 ） ? cm量級，導電機制可能與隧道效應及雜質離子導電有關。
  7. With the development of science and technology, more and more oxide crystals are synthesized by more and more advanced technique, the new oxide crystals are incessantly synthesized and the new characters of oxide crystals are incessantly founded. corundum dopped with impurity not only is cherished because of it ' s beautiful appearance, but also is used in the fields such as electrotechnics, mechanism, laser, the optic apparatus and the underlay of semiconductor. sapphire dopped with ti3 + is the best material of the tunable solid laser. zno crystal is material of the direct gap semiconductor ( the width of forbidden band : 3. 37ev ). the excited emission in zno crystal at room temperature has been found, so the ultraviolet luminescence in zno semiconductor can be acquired at room temperature

    含有少量雜質的剛玉晶體（ - al _ 2o _ 3 ）不僅由於其色澤艷麗成為人們珍愛的名貴寶石，而且由於它具有的優異性能，被廣泛應用於電工、機械、激光器，光學器件和半導體襯底材料。鈦藍寶石是目前最優異的固體寬帶調諧激光材料，用於製作飛秒脈沖可調諧激光器。氧化鋅晶體是直接帶隙寬禁帶半導體材料（禁帶寬度3 . 37ev ） ，現已發現具有室溫下受激發射特性，有可能實現室溫下半導體紫外發光。
  8. Laser induced diffusion is a technology that dope the impurities into a certain region of semiconductor by a focused laser. it has the advantages of “ low temperature processing ” and ” direct writing ”, and it is promising to use this technology in the fabrication of monolithically optoelctronic integrated circuits ( oeics ) to solve the incompatibility problem between optoelctronic and electronic components

    激光誘導擴散是用聚焦的激光束局域加熱半導體基片，將雜質以擴散的方式摻入到特定區域並且達到一定要求的一種技術，具有「低溫處理」 、 「直接寫入」 、 「局域升溫」等獨特優點，可有效解決單片光電集成器件（ oeics ）中光、電兩部分的工藝兼容這一難題。
  9. The questions the researcher concerned are which system will be chosen and how to obtain the good lithium ionic conductor materials, which is the basic departure of the paper. the addition of second phase in composite can change the interface structure and the conduction mechanism, improve the matrix conductivity and other function such as the sintering, crisping and so on, so the research of composites are an interesting field of the ionic conductors. the synthesis of lithium ionic conductor is often by solid state reaction, but this method needs high temperature and leads to the volatility of lithium which not only causes the drift of the compounds but gets the no well - distributed materials

    研究者所關注的問題是選擇新的體系進行研究，以期得到性能更好的鋰離子導體材料，這也正是本論文的基本出發點；復合離子導體中第二相的加入改善了基質的界面結構和導電機制，不僅可以提高基質材料的電導率，還可以在一定程度上改善材料的其它性能，如燒結性能、脆性和機械強度等。因此復合材料的研究是離子導體一個有廣闊前景的發展方向；合成鋰離子導體，特別是成分復雜的體系以傳統的固相合成法為主，但這種方法需要較高的溫度，容易引起鋰的揮發，從而造成產物組成的偏移，而且不易得到顯微結構均勻的材料。
  10. The increase of the thickness of the non - polarization slab will decrease the average polarization and the susceptibility of the multilayer

    雜質層的增厚會導致多層膜的極化和介電極化率的降低。
  11. Since the buildup of impurities often results in defective plating such as discoloration or loss of corrosion resistance.

    因為雜質的積累經常導致不良的電鍍，如脫色或喪失防腐性能。
  12. 1. capacity and discharge efficiency of polyacene capacitors were systematically studies and electrolyte is aqueous and aqueous solution a series of pristine sample were prepared by pyrolysis of phenol formaldehyde resin moulded with znc, this inorganic salt used together with the resin served not only as the pore - forming agent to form open pores, which grow into a three - dimensional network structure in the cured material, but also as the microstructure - controlling agent to form a loose structure dopable with bulky dopants such as bf4 and so on

    首次系統地研究了聚並苯導電材料作為雙電層電容器的電極活性材料時，在水系和非水系電解質中的容量及庫侖效率。用化學方法合成可溶性酚醛樹脂，加入的zncl _ 2在聚並苯的制備過程中既是成孔劑，使在處理的材料中形成三維網狀微孔，同時它又是微孔控制劑，形成能被bf4 -等體積較大的摻雜劑所摻雜的疏鬆結構。
  13. Abstract : this paper reports the observation and analysis results on three kinds of impurity in - al2o3 by using epma - eds. we studied the differences of electric conductivity between the area containing inmpurity and the normal area by ion transport method. the effects of impurity in - al2o3 on cycle life of the na - s cell were also discussed

    文摘:用epma - eds組合儀，對氧化鋁中的三種典型雜質進行了形貌觀察和成分分析，並用電子束誘導離子遷移法，研究了雜質區及正常區的離子電導差異，討論了不同雜質的特點及對氧化鋁作用中的危害。
  14. Finally, a specific analysis is made for our results. because we have considered the correlation between the confined and non - confined direction of the wire, the binding energy is improved and correspondingly the threshold energy is enhanced, which results in the declinement of the photoionization cross - section

    最後對所得結果進行了詳細的討論，山於我們選取的波函數考慮到限制方向與非限制方向的相關性因素，從而提高了雜質的束縛能（在寬階時尤為明顯x即提高了所謂的閾能（ e ，導致了光電離截面值的減小
  15. Thus, it is believed that in subsequent high - temperature process, the base boron will outdiffuse very easily into emitter and collector, which will form a parasitic barrier for the electrons when moving from emitter into base and result in performance degradation of the device

    這樣在後續的高溫工藝中就會引起基區的雜質外擴到集電區和發射區，產生電子勢壘，導致器件性能的嚴重退化。
  16. We also inspect the influences for both the width of strap and the position of the impurity, on the current distribution

    本文還研究了波導寬度以及雜質原子的位置對電流分佈的影響。
  17. When the electrical characteristics are dictated by impurity atoms, the semiconductor is said to be extrinsic semiconductors

    如果半導體的電學性質歸因於其中的雜質原子，那麼它將被稱為雜質半導體。
  18. Based on schr ? dinger equation we obtain the vigorous result of phase - coherent electronic transport through a single interface in quasi - one - dimension electron waveguide

    本文研究了電子波導中單個雜質原子對電流分佈的影響，基於薛定諤方程，得到了電子在準一維電子波導中單個雜質所在界面處的精確的相位相干電子輸運圖像。
  19. Owing to the exchange and interaction between electrons of based semiconductor gaas and magnetic impurity mn, this kind of material combines the functionality of semiconductors with that of magnetic compounds, which shows particular structural, electrical and magnetic properties. so this material is promising in the application

    由於這類材料中的基質半導體gaas與磁性雜質原子mn中電子之間的相互轉移及相互作用而使得這類材料兼有半導體及磁性化合物的特點，並在結構、電性質及磁性質等方面表現出一些獨特的性質，因而具有巨大的應用潛力。
  20. Pant doped with h4siw12o40 was obtained in the pam aqueous solution and glycol solution, respectively

    以聚丙烯酸胺為反應基質，分別在聚丙烯酰胺的水、乙二醇溶液中制備了摻雜態導電聚苯胺。
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