離子射程 的英文怎麼說

中文拼音 [lízishèchéng]
離子射程 英文
ion path length
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 射 : Ⅰ動詞1 （用推力或彈力送出） shoot; fire 2 （液體受到壓力迅速擠出） discharge in a jet 3 （放出） ...
  • 程 : 名詞1 （規章; 法式） rule; regulation 2 （進度; 程序） order; procedure 3 （路途; 一段路） journe...
  • 離子 : [物理學] ion
  • 射程 : range （of fire）; reach; throw; flightshot; gunshot; carry; actual range; firing range
  1. The fluctuation in range is called straggling.

    粒子射程的漲落稱為歧離。
  2. He shot the lion at point-blank range.

    他在近距離平射射程內向獅子射擊。
  3. Based on the revers kinetic intermediate energy heavy ion collision in which much more intermediate mass fragments are emitted towards forward angles, a sensitive observable on isospin effects in heavy ion collisions is investigated by means of using isospin dependent quantum molecular dynamics ( iqmd )

    摘要在重離子碰撞過程中，基於重質量的彈核轟擊輕質量靶核有大量中等質量碎片向前發射的逆運動學效應，利用同位旋相關的量子分子動力學觀察和研究了重離子碰撞過程中同位旋效應的靈敏性。
  4. The theory of seea is based on the insulator ' s surface emitted secondary electrons when bombarded by electron, includes the process of electron - simulated desorption ( esd ), the process of desorption gas ionization and the process of the ion influencing the flashover

    Seea理論以絕緣子表面在電子轟擊下發射二次電子為基礎，包含了電子誘發脫附（ esd ） ，和脫附氣體離子化並對閃絡過程產生影響等過程，對表面閃絡現象進行了解釋。
  5. Sputtering is the process in which material is removed from a surface as the result of a bombardment by atoms or ions with energies in excess of about 30ev.

    濺射就是用能量大於30eV左右的原子或離子，轟擊材料表面，把表面上的材料除掉的過程。
  6. Observation of the on - off sequencing of characteristic spectral lines from tracer materials arranged in layers in, or surface patterns on, planar or spherical targets can provide a record of radial or lateral energy transport processes in laser - generated plasmas

    測量激光聚變靶產生的軟x射線時間變化連續譜的形狀，可以知道許多x射線產生過程的詳細動態記錄，這有助於理解實驗的熱學條件。觀察軌跡特徵譜線的閉合序列，能提供關于激光等離子體激發能量和滯后能量的傳輸過程記錄。
  7. We prepare the si - sio2 and ge - sio2 thin film by using the dual ion beam co - sputtering method and the rf co - sputtering technique respectively, adjusting the substrate temperature ( ts ) and the annealing temperature ( ta ). then we analysis the structure of the thin film by using the xrd and tem

    論文採用雙離子束濺射和射頻磁控濺射沉積技術，通過改變薄膜沉積過程中基片溫度（ t _ s ）以及薄膜制備完成後退火溫度（ t _ a ）分別制備了si - sio _ 2和ge - sio _ 2薄膜。
  8. Finally, the characteristics of ion curren extraction in different conditions are simulationed with magic software, and the parameter of best emission surface is obtained

    最後，採用magic程序對高頻離子源不同引出參數下的束流引出特性進行了數值模擬，得到了獲得最佳的引出離子束所要求的等離子體發射面參數。
  9. The feasibility that kaufman ion source is applied in reactive ion beam etching is discussed. etching characteristics of materials, including pr, cr, quartz, are investigated. the etch rate and mechanisms of such materials are measured and analyzed as a function of ion energy, ion beam density and ion incidence angle in pure ar and chf3, respectively. the etch rate has shown a square root dependence on variation versus

    深入研究了光刻膠、鉻薄膜、石英等光學材料離子束刻蝕特性，分別以ar氣和chf3為工作氣體，研究光刻膠、鉻薄膜、石英等的刻蝕速率隨離子能量，束流密度和離子入射角度的變化關系，得到刻蝕速率與影響因素的擬合方程，為掩模的製作工藝路線提供了實驗依據和理論指導。
  10. From maxwell equations the refractive index equation and hamilton - jacobi equation, which describe the evolution of the electric field, are derived including the effects of the diffraction, the third - order intensity - dependent nonlinearity, plasma defocusing, the focusing and defocusing of the plasma channel, and the relativistic self - focusing

    從maxwell方程出發我們得到了兩個包含衍射、三階強度非線性、等離子體散焦、等離子體隧道聚焦和散焦以及相對論自聚焦等效應在內的激光場演化方程，即折射率方程和哈密頓-雅可比方程。
  11. In the section of fabricating technology, i first discuss the ion beam technology. through the analysis of the effects of each parameter on the surface smoothness, profile fidelity and linewidth resolution in the process of ion etching, the suitable angle of incident ion beam, ion energy, density of ion beam and time of etching are selected combining the actual status of the mask

    在製作工藝的研究方面，首先研究了離子束刻蝕技術，通過對離子束刻蝕過程中各個參數對刻蝕元件的表面光潔度、輪廓保真度和線寬分辨的影響分析，結合掩膜的實際情況選擇出了合適的離子束入射角、離子能量、束流密度和刻蝕時間等參數。
  12. Because that complex phenomena in pegs involve kinetic effects of plasma and cathode emitted electrons, and evolution of electromagnetic fields, particle - in - cell ( pic ) code is chosen as study tool, and a two and half dimensional cylindrical fully electromagnetic pic code cylinder2 - 1 / 2d, which is suitable for simulating the operation of the pegs, has been established

    考慮到peos物理現象涉及到等離子體和陰極發射電子的動力學行為以及空間電磁場的復雜變化，我們採用粒子模擬方法作為研究工具，研製了適用於peos物理問題模擬研究的二維柱坐標全電磁粒子模擬程序cylinder2 - 1 2d 。
  13. Now the method has application at large. because the laser - produced plasmas are rapidly varying, temporal resolution of spectral features is important to investigation of x - ray radiancy evolvement with time, many dynamic plasma processes and radiation transport. soft x - ray time - resolved diagnosis technology have had quiet great progress since from sixty " s end to seventy " s early

    由於激光等離子體變化快，且其x射線輻射的時間特性包含有豐富的物理信息，因此時間分辨的x射線輻射特性診斷是研究激光等離子x射線輻射隨時間的演變，各種動力學過程和輻射輸運等物理問題所必需的關鍵診斷技術。
  14. The main origin of the perpendicular magnetic anisotropy in tbco amorphous films is the static interaction between the aspheric distribution charges of non - s tb ions and the aberrant crystal field produced in sputtering and deposition process. the magnetic dipole interaction is in a secondary cause

    對于tbco非晶垂直磁化膜而言，具有非球對稱電荷分佈的非s態離子tb與濺射沉積薄膜過程中產生的畸變晶格場之間的靜電相互作用構成了tbco非晶薄膜垂直磁各向異性的主要部分， tbco薄膜內的磁偶極相互作用構成了其次要部分。
  15. In the discharge process, the ions can clean and activate the surfaces of cathodes, which can reduce the work function of the electrodes, and improve the discharge tubes ’ emission capability and stability

    在放電過程中，陰極表面有離子的清洗和活化作用，可以使電極逸出功降低，提高放電管的放射能力和穩定性。
  16. Using its two characteristics - fully automatic and rapid, this system can accomplish simultaneous, rapid, stable and repeatable matching with the load impedance, especially the dynamic load impedance ( eg : plasma load ). at the same time, it maintains the reflection coefficient at the desired value ( eg : 1. 2 ) to assure that the microwave transmission is at its best

    此系統可利用它全自動化和快速的特點，實時的為負載尤其是動態負載（比如:等離子體負載）提供快速，穩定，可重復的匹配，自動將反射系數保持到工程理想值，從而實現微波功率的最佳傳輸。
  17. Elemental analysis based on the emission from plasma generated by focusing a powerful laser beam on a solid sample surface is known as laser - induced breakdown spectroscopy ( libs ). when the power density of laser on the sample surface is high enough, the sample is vaporized, and the neutral and ionic species are formed in excited states

    利用聚焦的強激光束入射固體靶表面產生激光等離子體，對等離子體中原子和離子發射譜進行雜質元素分析，這一過程叫做激光誘導擊穿譜（ laser - inducedbreakdownspectroscopy ） ，簡稱（ libs ） 。
  18. Measurement procedures for resolution and efficiency of wide - bandgap semiconductor detectors of ionizing radiation

    離子輻射的寬能帶隙半導體探測器的分辨和功效的測量規程
  19. Nuclear instrumentation ; amplifiers and preamplifiers used with detectors of ionizing radiation ; test procedures

    核儀表.使用離子輻射探測器的放大器和前置放大器.試驗程序
  20. The results of simulations are : i ) energies of the incident ions to the target are determined mainly by the voltage across the cathode sheath, with a majority of ions " energy vary around the sheath voltage ; ions nearly normally bombard the target ; ions mainly locate above the sputtering holes because of the influence of the magnetic field, and the incident ions mainly come from the region ; the ions undergo several collisions during transportation, but that do n ' t matter much

    主要模擬結果有： ? ）入射離子到達靶面時的能量主要受到了射頻輝光放電中陰極殼層西北工業大學碩士學位論文李陽平電壓的影響，大部分離子的入射能量在陰極殼層電壓值附近，離子濺射時接近於垂直入射;射頻輝光放電受到陰極磁場的影響，等離子體中的離子主要集中在靶面濺射坑的上方，且入射離子主要來自這個區域;入射離子在輸運過程中和背景氣體分子有少量的碰撞，但影響不太大。
分享友人
分享到 Line

分享到臉書