離子沉積法 的英文怎麼說

中文拼音 [lízichénjīfǎ]
離子沉積法 英文
ionic deposition method
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 沉 : Ⅰ動詞1 （沉沒; 墜落） sink 2 （沉下 多指抽象事物） keep down; lower 3 [方言] （停止） rest Ⅱ形容...
  • 積 : Ⅰ動詞（積累） amass; store up; accumulate Ⅱ形容詞（長時間積累下來的） long standing; long pending...
  • 法 : Ⅰ名詞1 （由國家制定或認可的行為規則的總稱） law 2 （方法; 方式） way; method; mode; means 3 （標...
  • 離子 : [物理學] ion
  • 沉積 : [地] deposit; sedimentation; deposition; precipitation
  1. 6 the zn3n2 is prepared on focus glass substrate at low temperature. and for the first time, a p - zno with a carrier density of 1017 ? cm - 3 is obtained by thermal zn3n2 in an oxygen ambient

    5 、用等離子體增強的化學汽相沉積的方法制備了zn3n2薄膜，首次通過熱氧化zn3n2的方法，制備出了受主型載流子濃度為1017cm - 3的p - zno薄膜。
  2. Hydrogenated amorphous silicon nitride ( a - sinx : h ) films have been deposited by helicon wave plasma enhanced chemical vapor deposition ( hwp - cvd ), the effect of sih4 / n2 rate on the properties of the samples is systematically studied, and the critical experiment condition is obtained under which a - sinx : h films with different compositions are deposited

    本工作採用螺旋波等離子體化學氣相沉積（ hwp - cvd ）方法制備了氫化非晶氮化硅（ a - sin _ x ： h ）薄膜，系統地研究了不同反應氣體配比對薄膜特性的影響，得到了沉積不同組分a - sin _ x ： h的典型實驗條件。
  3. In this thesis, a kind of reversible immobilization method based on the plasma - polymerized film ( ppf ) used for effective immobilization of active bio - molecules and easy reproduction of sensors is developed. the surface of quartz crystal microbalance ( qcm ) is firstly prepared with plasma - polymerized film of butyl amine by glow - charge technique and then covered with a negative - charged polyelectrolyte by self - assembling. through strong electrostatic attraction, antibodies ( antigens ) positive - charged are immobilized for the determination of antigens ( antibodies )

    本論文基於等離子體聚合膜，設計了一種既能固定生物活性物質又易於傳感器再生的可逆固定化方法，即採用輝光放電的等離子體沉積技術，先在石英晶體上沉積一層正丁胺等離子體聚合膜，再在膜上自組裝一層帶負電的聚電解質，用以靜電吸附固定抗體（抗原）測定抗原（抗體） 。
  4. Moreover, hrtem observations indicate that the process is very selective : even in apparently homogenous illite or i / s, some crystals went opening and some remain unchanged. and the replacement of k cations by alkylammonium cations is not restricted to crystal edges, but extends to entire interlayer. the above facts are the basis of alkylammonium cations method applied to the diagenetic age of sedimentary rock

    Iaa法是以沉積巖的粒度?年齡譜為基礎的，利用這種方法可以獲得同一樣品不同粒級伊利石的年齡，隨著粒級的減小，樣品的年齡也減小，當碎屑伊利石的含量趨于零時，可以得到自生伊利石的成巖年齡；烷基胺陽離子取代法是一種化學方法，利用烷基胺陽離子的選擇性替代性，可以去除碎屑伊利石成分中的k離子，從而能夠獲得自生伊利石的年齡。
  5. In the hipib film deposition, high purity graphite was employed as target. relations between process parameters and the microstructure, as well as different physical properties of diamond - like carbon ( dlc ) film deposited by hipib ablated plasma were studied by adjusting the distance between target and substrate, which affects the intensity and ion energy of hipib ablated plasma, and the temperature of substrate in the film deposition processes. the mechanism of film deposition by hipib ablated plasma was explored also

    在薄膜沉積方面，利用高純石墨作靶材，調整薄膜沉積過程中的靶基距（燒蝕等離子體密度、離子能量）和基片溫度，研究實驗工藝對hipib燒蝕等離子體方法制備的dlc薄膜的微觀結構和宏觀物理性能的影響，探討了hipib燒蝕等離子體沉積dlc薄膜的成膜機理。
  6. The latter electrode is made by a 3 - electrode system with cv voltage. in the system, ta foil is acted as the working electrode, a pt foil as the assistant electrode and ag / agcl electrode as the reference electrode. stuff rucl _ 3 ? nh _ 2o is confected into electrolyte. after electrolyzing with cv voltage, ru ion can deposit on ta foil in the fashion of hydrated ru compound

    在循環伏安法中，用原料水合三氯化釕配製成的電解液，將鉭片作工作電極、鉑片作輔助電極、銀/氯化銀電極作參比電極組成三電極系統，向電解池通入循環伏安的電壓進行電解，使釕離子以水合釕化物的形式沉積在鉭基體上。
  7. The paper studied three aspects of extracelluar enzymes in sediments of the tidal flat wetland, namely 1 ) the distibution of five sorts of extracellular enzymes in sediments in the east end of chongming island along the elevation gradient or community succession series, the relationships between the activities of enzymes and the ecological factors, and functions of extracellular enzymes in the process of community succession ; 2 ) the effects of the heavy metal ions and edta on the activity of alkaline phosphatase in sediments of the east end of chongming island by adding and removing of heavy metal ions, discussing whether the activities of extracellular enzymes could be taken as the indicators for the environmental status ; 3 ) the variations of the activities of extracellular enzymes in sediments in the east end of hengsha island after the discarding clay

    本文以長江口典型濕地?崇明東灘為例，首次研究了沿高程梯度或沿植被演替系列沉積物中堿性磷酸酶等五種胞外酶活性的空間分佈規律，分析了胞外酶活性與環境因子的相互關系及其產生機制，討論了胞外酶活性在濕地植被演替中的作用。同時以崇明東灘沉積物為對象，運用重金屬離子的添加和去除等方法，研究了重金屬離子對沉積物中堿性磷酸酶活性的影響，利用胞外酶活性的變化探討了崇明東灘重金屬污染的狀況。此外，本文還研究了橫沙東灘吹泥試驗工程對沉積物環境因子和胞外酶活性的影響並進行了對比分析。
  8. Oriented growth of diamond film on si via plasma enhanced hot filament chemical vapor deposition

    等離子體增強熱絲化學氣相沉積法生長取向金剛石薄膜
  9. The influence of depositing condition on the depositing rate and the structure of the films were studied by the aid of tem and xrd. when the temperature ( ts < 450, ta < 800 ) is low, the structure of the samples is still amorphous. the majority content of the sample is sio 90 by the aid of xps

    利用雙離子束濺射沉積技術，通過共濺射方法制備了si - sio _ 2薄膜，研究了沉積時間、工作氣壓p _ （ ar ） 、基片溫度等對沉積速率的影響，用tem和xrd分析了樣品的結構。
  10. The theory of ion - beam etching and ion sources are reviewed. the classification of ion - beam etching are introduced. according to the mechanism that ion sputtering leads to faceting, trenching, reflection and redeposition, some relative solutions are put forward

    綜合敘述了離子束刻蝕技術和離子源的工作原理，簡單介紹了離子束刻蝕的分類，闡述了離子束刻蝕的物理濺射效應導致的刻面，開槽，再沉積等現象的產生機理及解決辦法，分析了kaufman離子源進行ribe的可行性及出現的問題。
  11. By changing the negative bias current density, gaseous ratio and total pressure, nanocrystalline diamond film is prepared by ion - assisted bombardment method at the substrate temperature of 700 ? 00 ? and mixture gaseous of ch4 and h2 the effect of growth parameters on the diamond film is studied. the diamond film presents very low compressive stress and excellent field emission character

    採用離子輔助轟擊法，以ch _ 4 、 h _ 2為源氣，襯底溫度為700 900 ，通過改變襯底負偏壓、 h _ 2和ch _ 4氣體比例以及工作氣壓，制備出納米金剛石薄膜，並對工藝參數對金剛石薄膜沉積的影響進行了研究。
  12. Our group has prepared nanometer - scale metal films in layer structures on glassy carbon ( gc ) substrate by cyclic voltammetric deposition. by using co as probe molecule, we have revealed for the first time, abnormal ir effects ( aires ) on these layer nanostructured films. the alres consists of several abnormal ir features including the enhancement of ir absorption, the inversion of ir band direction ( anti - absorption ), and the increase of fwhm ( increase of the number of different adsorption sites )

    本研究小組採用電化學循環伏安電沉積法在gc基底上制備層狀納米結構金屬薄膜，以co作為分子探針，觀察到異常紅外效應（ aires ）光譜特徵，即co等探針分子發生紅外吸收增強、紅外譜峰方向倒反（反吸收）和譜峰變寬（振動能級離散程度增加） 。
  13. The coating nano - metal materials are prepared by physical adsorption, surface deposition, arc discharge, plasma polymerization, laser cvd and emulsion polymerization

    其制備方法主要有物理吸附法、表面沉積法、電弧放電法、等離子體聚合法、激光化學氣相沉積法、乳液聚合法等。
  14. Having noticed that in some organic solution, the surface of the nanosized diamond particles can get some negative voltage for they can absorb some ions, we can make the nanosized diamond particles calculated on the cathode by the cathodic electrophoretic method, which is important to make the cnt and the nanosized diamond particles composed materials

    在合成材料的制備過程中，考慮到金剛石超微粉在一些有機溶液中因為其表面會吸附上一些帶電的離子，所以會帶上微弱的電壓。因此能通過電泳的辦法使得金剛石超微粉在陰極得到沉積，這對碳納米管與金剛石超微粉合成材料的制備有著重要的意義。
  15. Boron - doped silicon nanowires grown by plasma - enhanced chemical vapor deposition

    等離子體增強化學氣相沉積法實現硅納米線摻硼
  16. The fourier transform infrared ( ftir ) spectrum is an effective technology for studying the hydrogen content ( ch ) and the silicon - hydrogen bonding configuration ( si - hn ) of hudrogenated amorphous silicon ( a - si : h ) films. in the paper, ch and si - hn of a - si : h films, fabricated at different ratio of h2 / sih4 by microwave electron cyclotron resonance plasma chemical vapor ( wmecr cvd ) method, have been obtained by analyzing their ftir spectra that are treated by baseline fitting and gaussian function fitting. the effects of ratio of h2 / sih4 on ch and si - hn are studied

    Fourier紅外透射（ ftir ）譜是研究氫化非晶硅（ a - si : h ）薄膜中氫含量（ c _ h ）及硅-氫鍵合模式（ si - h _ n ）最有效的手段，對于微波等離子體化學氣相沉積（ mwecrcvd ）方法在不同h _ 2 sih _ 4稀釋比下制備出的氫化非晶硅薄膜，我們通過紅外透射光譜的基線擬合、高斯擬合分析，得出了薄膜中的氫含量，硅氫鍵合方式及其組分，並分析了這些參數隨h _ 2 sih _ 4稀釋比變化的規律。
  17. Cubic nitride boron ( c - bn ) films have been prepared at room temperature ( 25 ) by radio frequency plasma enhanced pulsed laser deposition ( rf - pepld ), assisted with substrate negative bias. in this paper, we primarily studied the effect of laser energy density, radio frequency power, substrate bias and depositing time on the growth of c - bn films, and analyzed the formation process and mechanism of c - bn films deposited by rf - pepld method at room temperature

    本文採用偏壓輔助射頻等離子體增強脈沖激光沉積（ rf - pepld ）方法在常溫下（ 25 ）制備立方氮化硼（ c - bn ）薄膜，初步研究了薄膜沉積參數：激光能量密度、射頻功率、基底負偏壓和鍍膜時間對立方氮化硼薄膜生長的影響，並分析了常溫下用rf - pepld方法沉積立方氮化硼薄膜的形成過程和機理。
  18. The ci ~ - c : h film was prepared by the means of plasma assistance chemical vapor deposition with hydrocarbon n - butylamine ( ch3ch2ch2ch2nh2 ) as carbon source. the material of carbon source was carried into chemical vapor deposition chamber under pure hydrogen

    採用等離子體輔助化學氣相沉積方法，以碳氫化合物正丁胺（ ch _ 3ch _ 2ch _ 2ch _ 2nh _ 2 ）作為碳源物質，用高純氫氣作為載氣，將碳源物質攜帶進入反應室。
  19. The c - bn thin films were deposited on si substrates using the conventional radio - frequency ( rf ) sputtering system. the c - bn / si thin film heterojunctions have been fabricated with doping into n - type ( p - type ) semiconductor by implanting s ( be ) ions into them. i - v curves of bn / si heterojunctions were obtained by the high resistance meter, c - v curves of bn / si heterojunctions were obtained by the c - v meter

    使用rf射頻濺射系統，在si襯底上沉積氮化硼薄膜，用離子注入的方法在制備好的bn薄膜中分別注入s和be ，成功的制備了bn / sin - p和bn / sip - p薄膜異質結，用高阻儀測得bn薄膜表面電阻率和bn / si薄膜異質結的i - v曲線，用c - v儀測得bn / si薄膜異質結的c - v曲線。
  20. Microwave plasma chemical vapor deposition ( mpcvd ), a kind of chemical vapor deposition method with low temperature ， low intensity of pressure and clearance ， is commonly used for the growth of diamond thin films

    微波等離子體增強化學氣相沉積法（ mpcvd法）是眾多低氣壓下激活cvd工藝方法的一種，也是目前在國內外比較流行的制備金剛石薄膜的工藝方法之一。
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