離子注入工藝 的英文怎麼說

中文拼音 [lízizhùrùgōngyì]
離子注入工藝 英文
ion implantation technology
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 注 : Ⅰ動詞1 （灌入） pour; irrigate 2 （集中） concentrate on; fix on; focus on 3 （用文字來解釋字句）...
  • 入 : Ⅰ動詞1 （進來或進去） enter 2 （參加） join; be admitted into; become a member of 3 （合乎） conf...
  • 工 : Ⅰ名詞1 （工人和工人階級） worker; workman; the working class 2 （工作; 生產勞動） work; labour 3 ...
  • 藝 : Ⅰ名詞1 （技能; 技術） skill 2 （藝術） art 3 [書面語] （準則） norm; standard; criterion4 [書面語...
  • 離子 : [物理學] ion
  • 注入 : pour into; empty into; inpouring; injection; infusion [拉丁語]; infunde [法國]; abouchement; influxion
  1. A lot of experiments have been done in the process of exploiture soft packaging li - ion battery about how to choice the rational arts and crafts. the content include : how to deal with the collector, add how much pvdf in the material, how long the material need to stirring and the right viscidity, how much condubtivity agent the electrode need, what theckness is best, choice different collectors, the degree of dryness of the electrode, theckness of pressed model, how much electrolyte will be added, placement how long after added the electrolyte, system of formation how to influnce the battery, in formation the battery need or not need preesure from outside, how to vacuumize and the optimize matching positive pole and negative pole. with these practice make sure the parameter of the positive pole should less than 90 m ; according to different vacuumize order the conduc - tivity agent in anode will be 5mass % and 9mass %, respectively, and in cathode the data is 2mass % ; every 100mah added to 0. 4 ml electrolyte ; before formation the battery should be placement 8 hours and the system of formation must be less than 0. 01c before the voltage reach to 3. 0v ; should press in outside when battery in formation ; to these batteries which capacity more than 350mah the vacuum time not excess 15s ; the optimize matching positive pole and negative pole between 2. 10 : 1 and 2. 15 : 1. finally make out the battery which cycling performance and security are all very well

    液態軟包裝鋰離子電池的研究主要是對關鍵工藝進行了優化設計，具體包括:集流體的處理、 pvdf的加入量、漿料攪拌時間和粘度、導電劑的加入量、電極膜的厚度、不同集流體的選擇、電極膜的乾燥程度、壓型的厚度、電解液的加入量、注入電解液后靜置時間的長短、化成制度的影響、化成時電池所具有的壓力影響、抽真空的處理、正負極活性物質的匹配。最後確定出液態軟包裝鋰離子電池最佳工藝參數:正極膜的厚度小於90 m ;根據化成時不同抽真空順序，確定正極膜中的導電劑的加入量分別為5mass %和9mass % ;負極膜中導電劑的加入量為2mass % ;電解液的加入量為每100mah添加0 . 4ml ;化成前電池的靜置時間應當大於8h ;電池在3 . 0v之前採用小於0 . 01c的化成制度;在化成過程中應當施加一定的外部壓力;對於350mah的電池抽真空的延時不應大於15s ;而正負極活性物質的質量比應當在2 . 1 : 1 2 . 15 : 1之間。
  2. For the first time, an integrated hall switch based on gaas mesfet process was fabricated

    論文首次採用gaas直接離子注入mesfet集成電路工藝，研製出了gaas霍爾開關集成電路。
  3. Design of rapid thermal processing for ions implanted silicon

    快速退火爐離子注入退火工藝設計
  4. Abstract : this paper introduces the application and development of ion plating, ionodialysis, ion implantation and the compound technology

    文摘:介紹了離子鍍、離子滲、離子注入及其復合工藝的應用與發展。
  5. In order to study the influence of different process on the threshold voltage uniformity, gaas mesfets are fabricated both in recessed - gate process and planar selectively implanted process

    分別對採用隔離注入挖槽工藝和平面選擇離子注入自隔離工藝制備的gaasmesfet閾值電壓均勻性進行了比較研究。
  6. The influence of different process on gaas mesfet sidegating effect has been studied. these process include recessed - gate process, planar selectively implanted process and planar boron implanted process

    本文對分別採用隔離注入挖槽、平面自隔離和平面離子注入隔離三種工藝制備的gaasmesfet旁柵效應進行了研究。
  7. Aimed at the helium damages in plutonium caused by a decay, he + ions were implanted in aluminum and the behaviors of helium in aluminum were investigated both theoretically and experimentally to simulate those effects in plutonium. at the same time, the diffusion of helium - 3 produced by tritium decay in stainless steels, which were served as the structural materials in tritium and fusion technologies, was also investigated in this thesis

    針對放射性元素鈈的衰變引起的氦損傷問題，選擇模擬材料鋁進行了he的離子注入和其中氦行為的理論和實驗研究，同時，也研究了氚工藝及聚變堆技術結構材料不銹鋼中氚衰變~ 3he的擴散行為，從而對兩種金屬中he的行為有了較深入的認識。
  8. We also studied some characteristics of sidagating effect using mesfet fabricated in planar boron implanted process including photosensitive, hysteresis, influence of sidegating effect on mesfet threshold voltage, influence of drain - source voltage on sidegating threshold voltage, influence of exchanging drain and source electrode on sidegating threshold voltage, relation between sidegating threshold voltage and the distance between side - gate and mesfet, relation between sidegating effect and floating gate, and so on

    本文還採用平面選擇離子注入隔離工藝，開展了旁柵效應的光敏特性、遲滯現象、旁柵效應對mesfet閾值電壓的影響、 mesfet漏源電壓對旁柵閾值電壓的影響、漏源交換對旁柵閾值電壓的影響、旁柵閾值電壓與旁柵距的關系、旁柵效應與浮柵的關系等研究。
  9. Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

    Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige
  10. The gettering processes usually are estimated by gettering of au to nanocavity in silicon. in this paper, the characteristics of nanocavity gettering mechanism, diffusion and distributing of aurum and ion implantation in silicon were described. in this work, many bumps on the polishing surface of the silicon, after a he + impantation in and subsequently a hot - treatment, were observed using atomic force microscope ( afm )

    我們注意到，在研究氫、氦離子注入誘生微孔的吸除作用時多以對金雜質的吸除效果來對吸除工藝進行評估，因此本文對微孔吸除機理、金在硅中的擴散和分佈以及半導體中離子注入的特點進行了描述。
  11. The surface hardness variations of some kinds of polymers were compared and the influence factors such as ion species, particle energy and dose were analyzed

    通過比較幾種不同類型的聚合物材料在注入前後表面硬度的變化，分析注入離子種類、注入能量、注入劑量等工藝參數對聚合物的影響。
  12. 3. to avoid the high temperature process in sige cmos technics, appropriate implantation energy and dose and rtp ( rapid thermal anneal ) are introduced into the the fabrication of sige cmos double - well and source

    3 .研究了離子注入法形成sigehcmos的雙阱及源漏工藝。確定了注入的離子類型、劑量、能量等關鍵參數。
  13. Sige - on - insulator ( sigeoi ), which appears very recently, integrates both the advantages of soi and that of sige and thus attracts much attention for the potential applications in low voltage, low power consumption, high dense integrated circuits and optoelectronics, system on chip etc. but people are in the very beginning of the sige - oi material fabrication research. this work focuses on these three facets : 1. sige film preparation ; 2

    本論文結合以上背景，主要進行了以下幾個方面的研究：一、硅基上sige材料的異質外延生長技術，以及sige薄膜的表徵；二、 sige - oi的simox制備工藝研究；三、 sige - oi材料的smart - cut制備工藝研究，以及sige / si異質結結構中注入h離子的物理效應。
  14. Doping - the process of the donation of an electron or hole to the conduction process by a dopant

    摻雜-把攙雜劑摻入半導體，通常通過擴散或離子注入工藝實現。
  15. We have investigated the influence on the character of cdte thin films with different conditions and parameters. secondly, in normal temperature, cdte thin films are high resistance semiconductor, for improving its electricity capability, we commonly inject benefactor or acceptor impurities into the pure cdte thin films, the ion influx technique is a good method among many adulteration means. at present, the literatures on the doped cdte thin films by the ion influx technique have a fat lot reports

    本論文首先採用近距離升華法在不同基片上制備cdte薄膜，研究了不同工藝條件和參數對cdte薄膜性質的影響。其次，在常溫下，本徵cdte薄膜均為高阻半導體。為了改善其導電性能，通常向cdte薄膜中摻入施主或受主雜質，其中離子注入技術是摻雜方法之一。
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