電子束刻蝕 的英文怎麼說

中文拼音 [diànzishùkèshí]
電子束刻蝕 英文
electron-beam lithography
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 束 : Ⅰ動詞1 （捆; 系） bind; tie 2 （控制; 約束）control; restrain Ⅱ量詞（用於捆在一起的東西） bundle;...
  • 蝕 : Ⅰ動詞1. （損失; 虧耗） lose 2. （腐蝕） erode; corrode Ⅱ名詞（天體現象） eclipse
  • 電子 : [物理學] [電學] electron
  1. Electron-beam lithography with a novel multilevel resist structure defines the pattern.

    採用新型的多層抗蝕劑結構的電子束光刻來形成圖形。
  2. Ibm says its researchers optimized the sram cell design and circuit layout to improve stability and developed several novel fabrication processes in order to make the new sram cell possible

    為了在減小內存單元的同時確保產品的安全性，該公司研究人員開發出了將電子束與光學刻蝕技術相結合的製造技術。
  3. At present, feas have potential for use as an electron source in a wide variety of applications, including microwave power amplifiers ( such as twts, klystron ), flat panel displays, electron microscopy, and electron beam lithography

    目前，場致發射陣列陰極的應用領域十分廣泛，主要包括微波器件（應用於twts ， klystron等） 、平板顯示器（ feds ） 、電子顯微鏡及電子束刻蝕系統等。其中，應用研究的焦點主要集中在平板顯示器和射頻功率放大器。
  4. This thesis work has researched the fabrication technics of photonic crystal defect waveguide with air - bridge structure and collecting waveguide ; suggested using uv - lithography and wet etching to fabricate traditional waveguide, after that, using eb - lithography and dry etching to fabricate photonic crystal holes, so can reduce the fabrication cost by a big range ; designed the moulding board, which can fabricate the air - bridge structure and is convenient for recognizing position in eb - lithography ; the structure consisted of traditional waveguides and etching grooves are fabricated on soi successfully, then an successful eb - lithography is realized on the structure, the defect waveguide collected with the traditional waveguide quite well ; used the etching grooves to do the sacrificial layer etching experiment, which grounded etching sacrificial layer by photonic crystal holes in next step

    提出採用紫外光刻工藝製作傳統波導結構之後，通過電子束曝光和干法刻蝕製作光子晶體小孔的工藝方案，大幅度減低了製作成本；設計出可形成空氣橋結構、並且適用於電子束曝光位置識別的光刻模板，在soi材料上成功製作出帶有空氣橋刻蝕預留槽以及接續光波導的結構，在該結構上成功實現了光子晶體帶隙波導的電子束曝光，帶隙波導與接續光波導位置接續良好；最後利用預留槽進行了刻蝕犧牲層的實驗，為下一步利用光子晶體小孔刻蝕犧牲層形成空氣橋結構打下了基礎。
  5. By studying and using conventional 1c process in combination with electron beam lithography ( ebl ), reactive ion etching ( rie ) and lift - off process, several efficient results are produced : semiconductor and metal nano - structures are fabricated ; the matching problem of photolithography and electron beam lithography is well solved ; the process efficiency is improved ; the process is offered for the controlled fabrication of nano - structures by repetitious process testing ; several nano - structures such as si quantum wires, si quantum dots, double quantum dot structures and tri - wire metal gate are firstly fabricated by using ebl and rie processes

    研究利用常規的硅集成電路工藝技術結合電子束光刻，反應離子刻蝕和剝離等技術制備半導體和金屬納米結構，很好地解決了普通光刻與電子束光刻的匹配問題，提高了加工效率，經過多次的工藝實驗，摸索出一套制備納米結構的工藝方法，首次用電子束光刻，反應離子刻蝕和剝離等技術制備出了多種納米結構（硅量子線、量子點，雙量子點和三叉指狀的金屬柵結構） 。
  6. The studies expressed that the tensile - strength declined with the growth of dose rate after the radiation treatment, and at the same time, the gel content had extreme value with the change of the dose rate. the surface of uhmwpe fibers showed some irregular micro - pits and dents after radiation treatment, narnely rough degree increasing. their number and deepness increased with increase of dose. and this phenomenon is the most obvious when the dose rate was 8. 5kgy / s and the dose was 400kgy. at the same time some containing oxygen groups, including hydroxyl group, carbonyl group and carboxyl group, were introduced into the fiber surface which was exposed to the air

    研究表明， uhmwpe纖維經電子束輻照處理后，纖維的拉伸斷裂強度隨劑量率的增加呈下降趨勢，凝膠含量隨著劑量率的變化存在極值。纖維表面出現了不規則的微裂紋和凹痕，隨著劑量的增大，電子束對纖維表面的刻蝕程度增加，在本研究中以劑量為400kgy劑量率為8 . 5kgy s時刻蝕效應最為明顯。同時，在空氣中進行輻照時，纖維表面被引入了一些含氧基團，包括羥基、羰基和羧基。
  7. The most prevalent procedure is to use photolithography or electron - beam lithography to produce a pattern in a layer of photoresist on the surface of a silicon wafer

    最常用的步驟是用光蝕刻或電子束蝕刻法，在矽晶圓表面的光阻層上製作出圖案。
  8. Although the creation of a finely detailed bas - relief master is expensive because it requires electron - beam lithography or other advanced techniques, copying the pattern on pdms stamps is cheap and easy

    雖然得花上大筆金錢，才能以電子束蝕刻或其他高階技術製作出有精密細節的淺浮雕主片，但要復制pdms壓模的圖案卻是便宜又容易。
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