電子發射表面 的英文怎麼說

中文拼音 [diànzifāshèbiǎomiàn]
電子發射表面 英文
electron emitting surface
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 發 : 名詞（頭發） hair
  • 射 : Ⅰ動詞1 （用推力或彈力送出） shoot; fire 2 （液體受到壓力迅速擠出） discharge in a jet 3 （放出） ...
  • 表 : Ⅰ名詞1 （外面;外表） outside; surface; external 2 （中表親戚） the relationship between the child...
  • 面 : Ⅰ名詞1 （頭的前部; 臉） face 2 （物體的表面） surface; top 3 （外露的一層或正面） outside; the ri...
  • 電子 : [物理學] [電學] electron
  • 表面 : surface; superficies; boundary; face; rind; sheet; skin; outside; appearance
  1. E 0, 15mev evaluation of surface contamination. part 3 : isomeric transition and electron capture emitters, low energy beta - emitters e beta max inferior to 0, 15 mev

    表面污染的評估.第3部分:同質異能躍遷和電子俘獲發射器，低能量發射器
  2. With the aid of baffle movement, a technique named masking pretreatment and the method of vacuum deposition have been used to fabricate the ag - o - cs photoemissive thin films with internal field - assisted structure for the first time. the internal field - assisted photoemission characteristics of ag - o - cs thin films show that the photoelectric sensitivity is increased when the internal electric field is applied to the thin films, which indicates that the electric field has been effectively provided to the thin films by the above - mentioned internal field - assisted structure. such an enhanced photoemission is attributed to the variations in energy - band structure of ag - o - cs thin films, and which are considered to induce the lower - energy electrons to participate in the photoemission

    通過掩膜預處理和擋板轉移技術的配合，利用真空沉積方法首次制備了內場助結構ag - o - cs光電發射薄膜。 ag - o - cs薄膜內場助光電發射特性測試結果表明，該方法能夠有效地實現ag - o - cs薄膜體內電場的加載與表面電極的引出，薄膜光電靈敏度隨內場偏壓的增大而上升。 ag - o - cs薄膜在內場作用下的光電發射增強現象與薄膜體內能帶結構變化低能電子參與光電發射等物理機制有關。
  3. This project which is based on the demand of increasing the electron tube ’ s qualities totally and reducing the manufacture cost has done a large amount of investigative work as follows to improve and perfect the technologies for the important part of electron tube manufacture ? the grid surface processing : on the surface processing of the molybdenum grid, the primary purpose is to reduce thermionic emission and secondary electronic emission of the grid. by the constantly experiment and grabbling the different technology routes, we have successfully developed these new technologies on the tac and zrc electrophoresis and electroplating platinum black of the grid, and made its surface cladding quality very stable and reliable

    本課題是基於整體提高電子管的質量和降低生產成本的要求，對電子管生產中的重要部分? ?柵極的表面處理技術進行改進和完善，主要在以下方面進行了深入研究:在鉬柵極表面處理方面，主要為實現降低柵極的熱電子發射和二次電子發射，通過不同工藝路線的不斷試驗和摸索，成功開發出柵極電泳tac 、 zrc和電鍍鉑黑的新工藝，使柵極的塗覆質量穩定可靠。
  4. The effort of manganese removal was studied and the kinetics of manganese removal was tried to establish. the factors of dissolved oxygen concentration, fe2 + concentration, ph, p concentration and closing of the filter were studied to evaluate their effort for biological manganese removal, and the correlation of residual manganese and oxidation - reduction potential was also discussed. as the iron content of water was high, experiment results showed that the reaction was zero order, as the iron content of water was low, the reaction was first order. the time needed for the cultivation of biological manganese removal was 60 70 days. the filter operated at the filtration rate of 8 10m / h, silica sand of effective size 0. 95 1. 25mm filled the filter to a depth of 1200mm

    試驗結果表明，成熟后濾砂表面濾膜的x射線衍射圖譜與mno _ x ? 5h _ 2o （ x = 1 . 86 ）的x射線衍射圖譜一樣，濾膜成熟后的結構在進水物質不發生變化的情況下不發生變化;合適的碳磷比對生物除錳有明顯的促進作用，試驗條件下的投磷量不會對出水造成二次污染;生物除錳需要亞鐵的參與，亞鐵的存在除了能夠促進微生物分泌胞外酶並刺激其活性外，還通過鐵離子的變價傳遞電子，催化錳離子的氧化反應，從而促進對二價錳的降解。
  5. The theory of seea is based on the insulator ' s surface emitted secondary electrons when bombarded by electron, includes the process of electron - simulated desorption ( esd ), the process of desorption gas ionization and the process of the ion influencing the flashover

    Seea理論以絕緣子表面在電子轟擊下發射二次電子為基礎，包含了電子誘發脫附（ esd ） ，和脫附氣體離子化並對閃絡過程產生影響等過程，對表面閃絡現象進行了解釋。
  6. In this paper based on the theory of the low energy electrons, the movement of the irons in the counter is analyzed. the theories of sputtering and secondary electron emission are discussed respectively. the irons " action and effect on the counter are putted forward

    本文從低能電子發射機理入手，分析了計數管內部離子運動情況，討論了離子濺射和二次電子發射，提出了離子與計數管內壁相互作用及其對計數管的影響，給出了計數管內壁表面處理模擬圖。
  7. The empirical formula in the process of the secondary emission is analyzed ; the stabilization condition of vacuum surface flashover is deduced. the physics image of the vacuum surface flashover is described with the seea theory

    本文分析了二次電子發射過程的經驗公式，推導了真空表面閃絡的穩定條件，以seea理論的觀點描述了真空表面閃絡發生的物理圖象。
  8. A new model for the growth stage of surface flashover has been developed according to the experimental results, which is based on the solid band theory. it is suggested that the electron multiplication could be attributed to two processes : one is the secondary electron emission avalanche caused by collisional ionization, the other is the micro - discharge caused by the trap centers of insulator. the trap cente

    電子倍增的過程與材料的表面態直接相關，材料微觀結構的變化和材料的表面處理都能夠導致材料表面態的變化，引起材料的表面二次電子發射系數以及材料中陷階密度和分佈的改變，從而影響了電子倍增的過程，並進一步改變或影響了沿面閃絡的發展過程。
  9. Besides, the growth of gasb expitaxy film was monitored by reflection high energy electron diffraction ( rheed ). the rheed images and intesity oscillation are collected by computer system. it showed that the gasb film prepared in 400 was amorphous and it became monocrystalline when the temperature rose to 500. atomic force microscope ( afm ) was applied to analyse the surface morphology of the films which were grown in diffrent growth rates or substrate temperature. the analysis were compared to simulation results. the experiment results indicated it was easy to form clusters when the rate of growth is high or

    此外，本文通過反射式高能電子衍射（ rheed ）監測了gasb外延薄膜的生長，利用rheed強度振蕩的計算機採集系統實現了rheed圖像和rheed強度振蕩的實時監測。實驗發現在400生長的gasb薄膜為非晶態，溫度升高到500薄膜轉變為單晶。利用原子力顯微鏡對不同生長速率和襯底溫度生長的gasb薄膜的表面形貌進行觀察分析，並與模擬結果進行比較。
  10. The melted tungsten carbide would react with the steel matrix on the interface and the reaction zone was observed as a result. the reacting production was examined as fe3w3c by means of x - ray diffraction and scanning electron microscopy analysis. the reaction between tungsten particle and steel matrix could improve the interfacial bonding strength remarkably

    Wc鋼復合材料的制備過程中， wc顆粒在高溫下發生了局部溶解並在wc顆粒和鋼基體界面處發生了界面反應； x射線衍射和電子衍射花樣分析表明，反應產物為高穩定性的fe _ 3w _ 3c ，界面反應有效地改善了wc顆粒與鋼基體的界面結合。
  11. Sed surface conduction electron emitter display

    表面傳導電子發射顯示
  12. Surface - conduction electron - emitter display

    表面傳導電子發射顯示器
  13. Laser intensity effects on forward hot electrons in interaction with al foil

    膜靶后表面快電子發射的影響
  14. The factors which influenced the process include the insulator ' s material, structure, the distribution of space electrical field, the way to deal with the surface, the characteristic of voltage waveform, pulse width etc. there are two kinds of theory for the vacuum surface flashover : secondary electron emission avalanche ( seea ) and electron triggered polarization relaxation ( etpr )

    影響該過程的因素包括絕緣材料結構、空間電場分佈、表面處理方法、所加電壓特徵，脈沖寬度等。研究真空表面閃絡過程有兩類理論：二次電子發射崩潰（ seea ）和電子引發極化鬆弛（ etpr ） 。
  15. The main work and conclusion for this paper is as following : according to the flashover test results of several kinds of iced insulators under positive voltage and negative voltage, this paper obtained : for the single porcelain insulator, the single glass insulator and the composite insulator bridged completely by icicle, the metal cathode ' s strong ability of emission electron is the primary reason that results in the lower negative flashover voltage ; the position difference of the high resistance district in method anode side results in that porcelain insulator cluster and glass insulator cluster have an evident effect of polarity ; when less ice and no icicle at the brim of the sheds, due to numerous non - polar arcs on the composite surface, the effects of polarity of composite insulator was lost using the test method of the average flashover voltage in the freezing period, dc flashover performances were investigated of several insulators with some typical structures and different material

    本文的主要工作和結論如下：在人工氣候室內，根據不同覆冰絕緣子正、負極性下的閃絡試驗結果，得出負極性電弧金屬陰極的強電子發射能力造成了單片瓷、玻璃絕緣子及被冰凌橋接的合成絕緣子有較低負極性冰閃電壓；正極性電弧金屬陽極側產生高電阻區所處位置的差異使得瓷和玻璃絕緣子串具有明顯的極性效應；覆冰較少時，合成絕緣子表面出現數量較多的非極性電弧使合成絕緣子無極性效應。利用覆冰期內平均閃絡電壓的試驗方法，對不同材質和結構的絕緣子在覆冰、低氣壓和污穢共存環境中的直流閃絡特性進行了研究。試驗結果表明，直流平均閃絡電壓隨著海拔的升高、覆冰量的增加以及污穢度的增加而降低，且其特徵指數與絕緣子結構、覆冰量、覆冰狀態、污穢度等有關。
  16. The ultra - thin er layers with the thicanesses in the range of 0. 5 ~ 3 monolayer ( ml ) are formed by electron beam evaporation on si ( 00l ) substrate at room temperature in an ultra - high vacuum system. after annealing at lower temperatures, ordered simcfores form on the surface. the trallsition of the surface reconsmiction pattem from ( 2 x l ) to ( 4 x 2 ) with the increase of er coverage up to l ml is observed by the reflective high energy electron diffraction ( rheed ) and low energy electron diffraction ( leed )

    本文是關于硅（ 001 ）襯底與電子束淀積的鉺、鉿原子反應形成的超薄膜的界面與表面性質的研究，以及在該襯底上出現的共振光電子發射現象，包括了以下四個方面的工作： 1鉺導致的硅（ 001 ）襯底上的（ 4 2 ）再構研究利用反射高能電子衍射和低能電子衍射，在室溫淀積了0
  17. In simulations, all important phenomena, such as non - neutral sheath widening near cathode, cathode electron emitting, current channel migrating to the load side of the plasma, ion accelerating toward cathode and magnetic insulation of cathode emitting electrons etc, have been observed and depict the internal physics of this device. also presented is the influence of cathode emitted electrons on phenomena in the conduction processes of pegs. the simulation results show, without cathode emitted electrons, rapid magnetic field penetration takes place only in region near the cathode, with cathode emitted electrons, magnetic field penetration takes place in all plasma region

    診斷發現了陰極表面非中性鞘層的形成、陰極電子發射、電流通道的漂移、等離子體離子加速以及陰極電子磁隔離等物理現象，揭示了這一斷路器件的物理機制；分析了陰極電子對peos導通過程中的物理現象的影響，模擬結果顯示：忽略陰極電子作用，磁場滲透現象主要出現在陰極表面區域，考慮陰極電子作用，磁場滲透現象出現在整個等離子體區域。
  18. This research has studied the microstructure of cathode materials systematically by the means of high resolution transmission electron microscopy and scanning electron microscopy, surveyed the electron emission performance of la2o3, - mo, la2o3 - y2o3 - mo, la2o3 - sc2c > 3 - mo cathode with the self - designed electron emission surveyor and analyzed the elements changing of the surface of mo - la2o3 - sc2c > 3 cathode in - situ. while it was heated to different temperature. at last, the relationship of the microstructure of cathode, diffusion of active matter and electron emission performances has been discussed

    本研究採用高分辨掃描電鏡、透射電鏡對稀土鉬鎢陰極材料的顯微結構進行了系統研究；利用本課題研究組設計研製的電子發射測量儀對la2o3 - mo ， la2o3 - sc2o3 - mo ， la2o3 ? y2o3 - mo三種陰極（以下稱鑭?鉬陰極、鑭鈧?鉬陰極、鑭釔?鉬陰極）的發射性能進行了測量；利用經改造后的俄歇電子能譜儀「原位」分析了發射性能較好的鑭鈧鉬陰極在不同溫度下表面活性元素的變化情況。
  19. To find a proper and convenient way in electron emitter research, in the paper, we have discussed the essential and possibility of setting up a new pld ( pulsed laser deposition ) device which connects with aes ( auger energy spectra ), and built such device in order to complete cathode deposition and analysis without exposing to the atmosphere and carried out cathode in - situ preparation and analysis electron emission phenomenon is a physical process taken place in surface of electron emitter

    為了解決電子發射體（陰極）研究方法中存在的問題，並尋求一種適當的、方便的陰極研究實驗方法，本論文論證了建立與aes相連的pld裝置的必要性和可行性，並實際建立了這一裝置，實現了陰極的原位沉積、原位分析。電子發射現象是在電子發射體表面發生的物理過程，發射表面是由活性元素構成的動態平衡系統，這一系統直接決定電子發射性能。表面分析手段對陰極研究是必不可少的。
  20. The properties of these doped powders, the microstructure and composition of these rare - earth co - doped tungsten matrices and cathodes have been investigated by size analysis, xrd, sem and edax. the electronic emission performances of these cathodes are measured in uhv electron emission surveyor. aes is adopted to analyze the atom composition and diffusion behavior of active elements on cathode surfaces

    通過粒度分析、 xrd 、 sem 、 edax研究了摻雜粉末的特性、燒結基體和陰極的微觀結構和成分;用動態真空電子發射測試儀對上述陰極進行了電子發射水平的測試;採用aes對陰極表面原子組成和活性物質的擴散行為進行了研究，分析了陰極發射水平與表面原子組成的關系。
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