電容的 的英文怎麼說

中文拼音 [diànróngde]
電容的 英文
capacitive
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 的 : 4次方是 The fourth power of 2 is direction
  • 電容 : electric capacity; capacitance; capacity
  1. The effects of inductance and capacitance make it necessary to carefully design all ac transmission systems.

    電感和電容的影響，使人們必須精心地設計所有的交流輸電系統。
  2. The capacitive effects are negligible.

    電容的影響可以忽略不計。
  3. Support optical or capacitive fingerprint sensor

    支持光學或電容的指紋傳感器
  4. It is measured in farads

    電容的測量單位是法拉。
  5. The alteration of city and country power system will bring the power supply ability to a new level. especially, the widely use of power cable cause the capacitance to earth doubled, and a cutoff of some lateral line has comparatively larger effect

    隨之而來的是電網對地電容的增大，特別是城網改造中電力電纜的廣泛應用，使電網的對地電容成倍增加，切除某一支路對整個電網的對地電容影響比較大。
  6. The in - depth analysis of the noise in gilbert mixer including parasitical capacitors, in which the mixer and lna have been connected together and the noise figure of mixer can be expressed explicitly as that of lna

    回在包括寄生電容的情況下，對雙差分對混頻器（ gilbertmixer ）的噪聲性能做了深入分析，把混頻器和低噪放聯系在一起，可像低噪放一樣，直觀的表達混頻器的噪聲系數。
  7. Among various fabrication techniques of thin film, the sol - gel process has gained much interest for the preparation of pzt thin film, due to ihe advantages of good homogeneity, easy control of composition, low in - ill i reaving temperature, easy formation of large area thin films pb ( zrxti : - k ) 0 :, ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ). lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate

    Pzt的制備方法有很多，其中溶膠?凝膠（ sol - gel ）方法可以和集成電路（ ic ）光刻工藝相互兼容，處理溫度低，有大面積塗敷性能，能精確地控制組分，無需復雜的真空設備，成本低廉，所以對于集成鐵電薄膜電容的應用這種方法有很廣闊的前景。本文利用sol - gel技術在摻錫的in _ 2o _ 3透明導電薄膜（ ito ）襯底和低阻硅襯底上成功地制備了pzt鐵電薄膜。運用了x射線衍射， sawyer - tower電路和lcr電橋分別對薄膜的晶化溫度，結構和電學性能進行了測試。
  8. Any subtle change of capacitance can be measured through the method of modulation on high - frequency harmonic oscillation return circuit

    電容的微小變化可通過對高頻諧振迴路調制的方法進行測量。
  9. This device realizes series resonance between high voltage inductance and tested capacitance. because of series resonance a higher voltage exists on the tested capacitance than the power ' s output. so a new ac high voltage test way to large capacity sample comes true

    該裝置以調頻的方式實現高壓電感和被試品電容的串聯諧振，從而在被試品上得到高於電源輸出端的電壓，即實現了以小容量電源對大容量試晶進行交流耐壓試驗的一種新方法。
  10. However, the h - bridge maglev chopper has serious switching losses, so as to have snubber circuit ; there is high emi with the chopper

    然而， h -橋斬波器開關損耗大，需要添加緩沖網路，電磁干擾十分嚴重;對供電電源有反向電流沖擊，容易造成供電電源和濾波電容的損壞。
  11. " electronic 1c chip drawing system " provides many functions such as " modify the position of the component ' s diagram " " modify the color of the component ' s diagram " " magnify and minify the component ' s diagram without distortion " " change the type of drawing line " " edit some physical properties of the component " " copy and paste diagram of one component " " delete one or more component diagrams " " move more than one components " positions " " change the z _ order of the diagram, set it to back or bring it to front " " save the drawing of the electronic components to one file and the file extension name is *. brd " " print the drawing ". users can finish all these functions easily by clicking and dragging the mouse

    電路板元器件繪制系統主要完成了使用鼠標拖拽、鼠標點按的方式繪制電路板上各種常見的元器件圖形；編輯電路板上元器件圖形的位置；編輯元器件圖形的顏色；不失真的對器件圖形進行放大和縮小；編輯元器件圖形的線型；編輯電路板上各個器件的物理屬性（比如電阻的阻值大小、電容的容量大小、額定電壓等） ；復制已經繪制出的電路板上的器件；粘貼剪貼板上的器件；刪除單個或多個已經繪制出的器件圖形；同時改變多個器件圖形的位置；改變繪制區內各個元器件的zorder順序，也就是可以將層疊在一起的圖形置前或置后；把繪制的電路板器件圖保存到指定文件中；能打開、查看和修改保存的電路板器件圖；列印電路板器件圖。
  12. It is found that the main electronic conduction mechanism in the high field regions of the i - v characteristics is identified to be fowlernordheim tunneling. the effect of y ray on sic mos c - v characteristics depends strongly on the bias voltage applied to the gate electrode during irrad

    當氧化層中存在較強電場時，電離輻照對s匯mos電容的影響會更明顯， sicmos器件比st器件具有更好的抗y輻照的能力。
  13. Normal heat shrinkable tube is universally applied in insulated protection of wire connector and terminal, soldered point, resistor and capacitor ; in anti - corrosion of metallic pod and as wire distinctive mark etc

    阻燃性熱縮絕緣套管廣泛應用於電線連接終端，電阻和電容的絕緣保護；金屬的防腐防銹；電線的標志等。
  14. The dc power supply consists of passive filter circuit. the capacity of passive filter is up to 264mf

    設計的直流電源用最簡單的無源濾波電路，濾波電容的容量為264mf 。
  15. The study has completed the design of two - phase inverter and made up of the two - phase inverter - motor system for experimental use it is a variable frequency adjustable speed system with a open - loop control of rotational speed, which consists of voltage - controlled oscillator circulating assign device inverter circuit and two - phase induction motor a accurate mathematical model is set based on the whole system, and simulator program of dynamic and steady condition is established, which is used to calculate the dynamic and steady performance by kron and symmetrical coordinate converter by simulator calculation and experimental research with specific parameter of the system, a comparison is made between predicted and experimental characteristics, experimental measurements are shown to compare closely with corresponding theoretical result it is compared with some variable frequency adjus table speed system comprising inverter and single - phase induction motor from the system efficiency torque pulsation and the effect of two - phase inverter capacitance based on the conclusion, harmonic cancellation pulse width modulation control of a two - phase inverter - fed induction - motor drive system is researched, which cancelled the low harmonic and improve the system performance

    通過對電機的kron變換和對稱分量變換，建立了系統較精確的數學模型，編制了系統動態及穩態運行的模擬計算程序分別計算系統的動態和穩態性能。通過對系統的具體參數進行了模擬運算和實驗研究，實驗和模擬結果進行比較，說明實驗和理論較為一致，並從系統效率、轉矩脈動及兩相逆變器電容的影響等方面與各種逆變器和單相異步電動機組成的變頻調速系統加以比較。在此基礎上，對兩相逆變器供電-異步電動機系統使用諧波抑制pwm控制進行了研究，由於減少了低次諧波，改善了系統性能。
  16. Ppfc working principle, circular current and effects of clamping capacitor are studied in this paper in detail. because of the clamping capacitor, ppfc have some good features compared with ppc : reducing the fluctuate of the input current ; restraining the voltage spike of the power mosfet ; avoiding the bias - magnetic of the transformer

    由於箝位電容的加入，相對于推挽電路而言，該拓撲具備了一些獨特的優點：減小了輸入電流的脈動：削弱了開關管的關斷電壓尖峰；有效抑制了變壓器的偏磁。
  17. The activity - based current extraction algorithm has been improved in gate capacitance calculation

    此外，對基於活動率的電流提取器進行改進，提高了等效門級電容的計算準確度。
  18. The correlative items of dc filters are researched on the basis of gezhouba - shanghai hvdc transmission project. in the analysis the three - pulse model is used to simulate converter, which takes into account the impact of the stray capacitance. the harmonics distribution on dc lines is simulated accurately, especially the harmonic ignored in old models

    本文以葛上直流輸電工程為基礎，研究直流濾波器設計中的相關問題，採用考慮了雜散電容的三脈動模型來建立換流站模型，更為準確地模擬出直流輸電線路上的諧波分佈情況，尤其是模擬出舊模型中忽略的次（為自然數）諧波，為直流濾波器的設計提供了更精確的數據和判斷依據。
  19. It is believed that p - si tft will be the main type in the future panel display. among the process of manufacture p - si tft, the source and drain will have the superposition with grid for the reason of machine ’ s alignment error. the superposition will bring superposition capacitance and it will badly cut down the electric performance

    在制備多晶硅tft時，由於機器的套準誤差會在柵極與源、漏極之間產生重疊部分，這樣就造成了柵源、柵漏之間的交疊電容，交疊電容的存在嚴重影響了多晶硅tft的性能，而利用自對準工藝制備的多晶硅tft則避免了交疊電容的產生。
  20. The series solution of the eccentric spherical capacitor ’ s capacitance has been obtained based on the bispherical coordinate system and strict derivetion, and through making programe to compute to get the numerical relation between the capacitance and the eccentrity, pionted out that the capacitance not let up but enlarged with the gain of eccentriccity

    四、採用雙球坐標系嚴格求解了偏心球形電容器的電容。得到了它的級數解，求得了偏心球形電容器電容大小隨偏心度變化的規律，發現偏心球形電容器電容的大小並不是隨偏心率的增加而減小，而是隨偏心率的增加而增加的。
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