電荷區 的英文怎麼說

中文拼音 [diànhéqū]
電荷區 英文
charged region
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 荷 : 荷名詞（蓮） lotus
  • 區 : 區名詞（姓氏） a surname
  1. The composites not only show excellent photo - responsive properties in the visible and near - ir region ( 450 ~ 850 nm ), but also show complementary and synergetic enhancement effects in photosensitivity in the visible and near - ir region. the reasons for the enhanced photoconductive properties and new effects are explained in terms of the partial and directional charge transfer from phthalocyanine to azo compound in these azo / tiopc composites. 2

    研究發現這兩種復合材料體系在可見光區和近紅外光區（ 450 850nm ）均有光譜響應，光譜響應范圍得到了拓寬，並在該波長范圍內都有優良的光電導性能，呈現出明顯的光電導性能協同增強和互補效應，該復合材料體系中酞菁向偶氮發生的部分定向的電荷轉移是光電導性能協同增強和互補效應產生的物理起因。
  2. What is measured, then, is the size of the electric charge distribution.

    所以我們所測定的是電荷分佈區的大小。
  3. Electronic charge that is binding is located in the region.

    起成健作用的電子電荷定城在此區域。
  4. A charge conservation statistics enhancement method used in semiconductor divice monte carlo simulation is approached, which smoothes the charge fluctuation caused by the statistics enhancement, and keeps the continuation of cross edge charge flow

    摘要介紹了一種在半導體器件蒙特卡羅模擬中保持電荷守恆的統計增強方法，該方法消除了由統計增強引入的電荷統計漲落，保持了不同增強區界面處過界粒子流的連續性。
  5. During the high - voltage device design, the thick epitaxial layer ldmos which is compatible with current technology was researched. this device used piecewise vld and multiple region structure f reduce field layer. the using of the f reduce field layer effectively reduce the surface electric field of the device, shorten the length of its drift region, enlarge the choice of range of the ion implant dose of the p layer, and effectively restrain the disadvantageously affection on the breakdown voltage of the interface charge qss

    在高壓器件研究中對與現有工藝相兼容厚外延ldmos進行研究，該結構採用分段變摻雜多區p ~ -降場層，有效降低器件的表面電場，縮短器件的漂移區長度，增大p ~ -降場層注入劑量的選擇范圍，並有效地抑制界面電荷qss對器件耐壓的不利影響。
  6. Author analyzed the relationship between the length and the impurity concentration of drift region and thickness of buried oxide layer and thickness of soi and the charges of oxide layer and bias voltage of bulk and breakdown voltage and on - resistance by numerical simulation

    採用數值模擬分析方法，深入研究了漂移區長度、漂移區濃度、埋氧層厚度、頂層硅厚度、氧化層電荷以及襯底偏壓對resurf效應、擊穿電壓和導通電阻的影響。
  7. In this paper, based on the amplitude transport equation of fast varying field and the low frequency disturbance equation of electr on density, the evolutions of the density distribution of charged particles and the collapse of electric field have been calculated numerically in two dimensions with three field components under the condition of transverse wave

    所以本文採用了ftcs有限差分格式方法，利用二維三分量軸對稱，對空間飛行體與壓縮區內等離子體非穩態相互作用過程進行數值模擬，得到了電荷密度擾動與電場的變化情況。
  8. Using two - dimensional numerical simulation software, analyze the affect of isolated - trench ' s parameters on the breakdown voltages of three - class bipolar power devices ( whose ideal breakdown voltages correspond to 40v, 70v and 100v ), which include width, depth, isolated material ' s dielectric constant, fixed interface - charge and field plate located at the top of deep - trench termination

    利用二維數值模擬軟體分析了影響三類典型應用的雙極功率器件（對應的理想擊穿電壓bv _ （ cro ）分別為： 40v ， 70v ， 100v ）擊穿電壓的諸多因素（主要包括阱寬度、阱深度、阱內填充介質、界面固定電荷、阱區頂端場板） 。
  9. They are associated with geomagnetic activity brought about by solar wind. auroras occur as a result of charged particles ( mostly electrons ) from the sun colliding with gas particles in the earth s atmosphere, producing a glow in different colours

    極光通常在高緯度的地區出現，它們與太陽風引致的地磁活動有關。當來自太陽的帶電荷粒子（主要是電子）與地球大氣層的空氣粒子碰撞，產生不同顏色的光，這便是極光。
  10. Numerical simulation results indicate that, for low temperature dust particles, dust particles mainly exist in the area near the column center and their charge - number can be considered as a constant, while in the area where there are no dust particles, ion and electrons are in ambipolar diffusion ; for high temperature dust particles, both the distribution regions of dust particle and high ion density are expanded and dust charge - number is increasing with the distance from the center

    計算結果表明：當塵埃粒子的溫度較低時，塵埃粒子主要集中在圓柱形放電器的中心很小的區域，塵埃粒子攜帶的電荷幾乎是一個常數，受塵埃粒子空間電荷的影響，離子在該區域的密度最高。在遠離中心區域，離子和電子呈現雙及擴散特點；當塵埃粒子的溫度較高時，塵埃粒子分佈的區域和高離子密度區域擴大，塵埃粒子離放電器中心越遠，攜帶的負電荷越多。
  11. During the circuit design, the author analyzed the basic principle of the direct current motor, pwm control, h - bridge power driver, and two control techniques of h - bridge power drive circuit, designed its general structure, so the feasibility of the design is confirmed. then, reference, oscillator, power dmos gate drive circuit ( charge pump, bootstrap ), and dead time generation circuit are designed and analyzed in the sub - circuits. a current - controlled oscillator is presented in this thesis

    在電路設計中，作者介紹了直流電機的工作原理和數學模型、脈寬調制（ pwm ）控制原理、 h橋電路基本原理和h橋功率驅動電路的兩種控制模式，設計了驅動電路的總體結構，給出了電路的功能模塊，確定了設計的可行性，然後在子電路模塊中，重點分析設計了基準源電路、振蕩器電路、高端功率管柵驅動電路（電荷泵及自舉電路） 、低端功率管柵驅動電路和死區時間產生電路。
  12. Dinghu are mainly relied on the power supply of the power grid of guangdong province, there are four 110, 000 v transmit and transformer substations, one thermal power plant with a total installed capacity of 3000 kw in the first duration, and a total capacity of power supply of 75000000 kw and a daily load of 15000 kwh in the district, the power grids are perfect and cover the whole district

    鼎湖區主要依靠廣東省大電網供電，全區擁有4個11萬伏輸變電站和一家首期容量3000千瓦的火力發電廠，總供電能力超過7500萬千瓦，日負荷達1 . 5萬千瓦時。區內代電網路齊全，供民線路覆蓋城鄉。
  13. Lines of force can begin or end inside a region of space only when there is charge in that region.

    只有當這一空間區域內有電荷存在時，電力線才能發自或終止於這一空間區域。
  14. The pin silicon photodiode made by alice - china group, which has a large area and high performances, is an important part of the photon spectrometer ( pros ) pbwo4 detector read - out system on the alice experiment. the pin diode has a sensitive area of 16x17 mm2. its leakage current is lower than 5na at room temperature

    本工作研製的pin硅光電二極體的靈敏區面積為16x17mm2 ，常溫漏電流小於5na ，紫光區量子效率約為83 % ，結電容為110 - 120pf ，以及由pin光電二極體與電荷靈敏前置放大器組成的讀出系統的噪聲水平在- 25下小於527個等效噪聲電荷，並經過了長期性能穩定性的考驗
  15. Static removal lonizing air gun / hs static removal lon - izing air nozzle lonizing air gun / nozzle is a kid of effective static removing instrument, which swiftly blows the great deal of cation and anion occurred in the ion occurring in - strument with high pressure airflow to the area to be re - moved the static, neutralizes the static charge clooecting in the object, at the same time, high speed ion airflow blows off the dust attracted by static, and prevents it to attract dust again

    離子風槍/風嘴是一種高效的靜電消除裝置，通過高壓氣流將離子發生裝置所產生的大量正負離子迅速吹向所要除靜電的區域，中和物體上所積累的靜電電荷，同時，高速離子氣流將靜電吸引的塵粒吹除，並阻止其再次吸收塵埃粒子。
  16. The net measure of this property possessed by a body or contained in a bounded region of space

    靜電荷物體所帶有的或一固定區域空間內含有的凈電荷
  17. 2. to design an axial magnetic field. the cathode lies in 0. 4 - 0. 7 of peak value of the magnetic field and excursion channel in a uniform magnetic field to suppress space charge effects ; to design transition section between the gun and excursion channel in converse computation. 3

    選擇電子槍陰極處于軸向聚焦磁場峰值的0 . 4 - 0 . 7倍處;漂移通道（互作用區）位於均勻軸向聚焦磁場中，以抑制電子束的空間電荷效應;使用反演算法設計電子槍和漂移通道之間的過渡區。
  18. In respect of sic devices, an analytical model of 6h - sic jfet to well match the experimental results is proposed. the radiation response of sic jfet in room temperature to 300 c is simulated with the analysis for the neutron irradiation effect such as carrier removal, mobility degradation and space charge density decrease

    對sicjfet的電參數如電子濃度，遷移率，電阻率和空間電荷區密度在中子輻照下的變化進行了分析，提出了中子輻照下6h - sicjfet的器件模型，利用此模型對sicjfet在室溫和300時的輻照響應進行模擬的結果和實驗值相符。
  19. Because of the great potential of sic mosfets and circuits, in this paper, the characteristics of 6h - sic pmosfets are studied systematically, emphasizing on the effects of interface state and s / d series resistance on sic pmosfets firstly, the crystal structure of silicon carbide, the phenomena of incomplete ionization of the impurity and the fitting formula of hole mobility are presented. the characterization in space - charge region of sic pmos structure is analyzed by solving one dimension poisson equation

    研究了sic的晶體結構，分析了sic中雜質的不完全離化現象以及sic中空穴遷移率的擬和公式；用解一維poisson方程的方法分析了sicpmos空間電荷區的電特性；本論文重點分析了界面態分佈和源漏串聯電阻對sicpmos器件特性的影響。
  20. The influence of incomplete ionization of impurity in 6h - sic on mosfet electrical characteristics is investigated considering the frenkel - pool effect, which can enhance the impurity ionization by lowing the effective barrier height

    把frenkel - pool效應引入了對sicmos表面空間電荷區雜質不完全離化的分析，並建立起了在電場作用下sic雜質離化的新的模型。
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