電蝕刻法 的英文怎麼說
中文拼音 [diànshíkèfǎ]
電蝕刻法
英文
electric etching-
The silicon plates are formed reverse four wimble array in koh solution by wet - etching technology. then the electrochemical etching experiments are done in three poles electrobath. and some technology questions such as heat oxygenation, light etching, wet etching and electrochemical etching have been analyzed. at the same time sample appearances are analyzed by scanning electron microscope. according to current burst model theory, the electrochemical deep holes etching mechanism are analyzed
在三極電解槽中，進行了電化學深刻蝕的探索性實驗。對氧化、光刻、濕法刻蝕和電化學刻蝕中的工藝問題進行了初步的理論和實驗研究，同時，採用sem對實驗樣品進行了形貌分析，並採用電流突破模型對電化學深孔刻蝕機理進行了理論分析。The design of manganin film and copper film were etched by the first time
首次採用以半導體光刻的方法來刻蝕錳銅敏感薄膜和銅電極薄膜的圖形。A large number of attempt and painstaking experiment have been done in this paper according to existing project. we also do lots of chemical and electrochemical etching research in material of lab6, and find out three kind of methods to produce the field emitting cold cathode including reactive ion etching ( rie ) with oxygen, wet process etching and electrochemical etching. through produce some field emitting cold cathode single tip including lab6 field emitting cold cathode, molybdenum field emitting cold cathode, tungsten field emitting cold cathode, tungsten rhenium field emitting cold cathode, molybdenum covered with lab6 film field emitting cold cathode
而且，目前可借鑒的參考文獻較少，圍繞著前人做過的方案，本文做了大量工作，在已有文獻介紹的基礎上，結合原有的理論和實踐基礎，摸索出了包括高溫氧作用反應離子（ rie ）刻蝕法、濕法腐蝕法和電化學腐蝕法在內的三種制備工藝，運用電化學腐蝕工藝成功制備了單尖的六硼化鑭場發射冷陰極尖錐、鉬場發射冷陰極尖錐、鎢場發射冷陰極尖錐、鎢錸合金場發射冷陰極尖錐以及有六硼化鑭薄膜覆蓋的鉬場發射冷陰極尖錐。This thesis work has researched the fabrication technics of photonic crystal defect waveguide with air - bridge structure and collecting waveguide ; suggested using uv - lithography and wet etching to fabricate traditional waveguide, after that, using eb - lithography and dry etching to fabricate photonic crystal holes, so can reduce the fabrication cost by a big range ; designed the moulding board, which can fabricate the air - bridge structure and is convenient for recognizing position in eb - lithography ; the structure consisted of traditional waveguides and etching grooves are fabricated on soi successfully, then an successful eb - lithography is realized on the structure, the defect waveguide collected with the traditional waveguide quite well ; used the etching grooves to do the sacrificial layer etching experiment, which grounded etching sacrificial layer by photonic crystal holes in next step
提出採用紫外光刻工藝製作傳統波導結構之後，通過電子束曝光和干法刻蝕製作光子晶體小孔的工藝方案，大幅度減低了製作成本；設計出可形成空氣橋結構、並且適用於電子束曝光位置識別的光刻模板，在soi材料上成功製作出帶有空氣橋刻蝕預留槽以及接續光波導的結構，在該結構上成功實現了光子晶體帶隙波導的電子束曝光，帶隙波導與接續光波導位置接續良好；最後利用預留槽進行了刻蝕犧牲層的實驗，為下一步利用光子晶體小孔刻蝕犧牲層形成空氣橋結構打下了基礎。By studying and using conventional 1c process in combination with electron beam lithography ( ebl ), reactive ion etching ( rie ) and lift - off process, several efficient results are produced : semiconductor and metal nano - structures are fabricated ; the matching problem of photolithography and electron beam lithography is well solved ; the process efficiency is improved ; the process is offered for the controlled fabrication of nano - structures by repetitious process testing ; several nano - structures such as si quantum wires, si quantum dots, double quantum dot structures and tri - wire metal gate are firstly fabricated by using ebl and rie processes
研究利用常規的硅集成電路工藝技術結合電子束光刻，反應離子刻蝕和剝離等技術制備半導體和金屬納米結構，很好地解決了普通光刻與電子束光刻的匹配問題，提高了加工效率，經過多次的工藝實驗，摸索出一套制備納米結構的工藝方法，首次用電子束光刻，反應離子刻蝕和剝離等技術制備出了多種納米結構（硅量子線、量子點，雙量子點和三叉指狀的金屬柵結構） 。A different approach, named " two step growth approach " has been applied to fabricate an 8x8 photodiode array in the first time. the micro - processing procedures of this photodiode array including standard photolithography, a number of metallisation, wet - chemical etching and sic2 deposition for insulation were developed in this study
首次採用「兩步法」制備出了新穎的8 8zns肖特基光電二極體陣列，詳細研究並確定了制備該器件的標準光刻、金屬沉積、濕化學腐蝕、 sio _ 2絕緣層沉積等一系列微電子處理工藝。Xxx current production exhibits minor seeding ( metal deposits ( gold color ) in scribe lines ), which is due to batch processing of plating process due to significantly lower volumes and breaks in ordering
該公司目前產量小幅增加（蝕刻生產線的金黃色金屬沉澱物） ，由於整理量與斷裂品大減，導致電鍍過程可採用批次加工法。The most prevalent procedure is to use photolithography or electron - beam lithography to produce a pattern in a layer of photoresist on the surface of a silicon wafer
最常用的步驟是用光蝕刻或電子束蝕刻法，在矽晶圓表面的光阻層上製作出圖案。I understand the circuits are etched into the wafer by repeating the photolithographic process of light exposure and chemical treatment
我知道這些電路是通過照相平板印刷法的曝光和化學處理蝕刻到晶元上的。Topics on computer interface control technologies are discussed in detail, together with hardware design on control circuit, interpolation algorithm, and control software. all of our efforts are concentrated in one purpose - to establish a cnc system suitable for excimer laser micro fabrication. based on computer local bus tech.,
本文針對由反應式步進電機驅動的微加工工作臺控制和準分子激光器外觸發控制特點，就計算機介面控制技術、硬體控制電路設計、插補演算法求解、控制軟體實現以及準分子激光微刻蝕加工過程進行了較詳細的討論。Micro - channel electrophoresis chip ( mce chip ) system is a newly developed research field. the micro - channel network on the chip is manufactured by the technology of micro opto electro mechanical system ( moems ) on the substrate of glass, fused silica, pdms etc. sample separation is performed in the micro - channel and detected by opticcal or chemical methods
微通道電泳晶元（ micro - channelelectrophoresischip ， mcechip ）系統是利用微光機電系統（ moems ）技術在玻璃、石英、有機聚合物等基片上刻蝕出預設計好的微通道網路，並在其中進行樣品的電泳分離，利用光學或化學等方法進行檢測。分享友人