靜電敏感性 的英文怎麼說

中文拼音 [jìngdiànmǐngǎnxìng]
靜電敏感性 英文
electrostatic susceptibility
  • 靜 : Ⅰ形容詞1. （安定不動; 平靜） still; calm; motionless 2. （沒有聲響; 清靜） silent; quiet Ⅱ名詞（姓氏） a surname
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 敏 : Ⅰ形容詞（靈敏;敏捷） quick; agile; smart; nimble Ⅱ名詞（姓氏） a surname
  • 感 : Ⅰ動詞1 （覺得） feel; sense 2 （懷有謝意） be grateful; be obliged; appreciate 3 （感動） move; t...
  • 性 : Ⅰ名詞1 （性格） nature; character; disposition 2 （性能; 性質） property; quality 3 （性別） sex ...
  • 靜電 : [物理學] static electricity; franklinism; franklinic electricity
  • 敏感性 : sensibility; sensitiveness; susceptibility; susceptiveness敏感性分析 sensitivity analysis; 敏感性...
  • 敏感 : sensitive; susceptible; tactful
  1. Hbm test method for protection of electrostatic discharge sensitivity testing : component level

    靜電放電敏感性試驗防護的試驗方法
  2. In that case, hunan telecomm could improve the synthesized competitiveness. this article adopts commercial model, choose comparative model phs wireless local loop network construction and give its technological economic analysis. through the analysis of the financial indexs, this article calculates firr, payback period of static investment, financial net present value, returns on investment, investing tax rate, etc

    本文採用商務模型，選取比較典型頗具爭議的phs 「小靈通」無線市話網路的建設進行技術經濟分析，通過對財務指標包括財務內部收益率firr 、靜態投資回收期、財務凈現值、投資利潤率、投資利稅率等指標的定性計算，對firr的敏感性進行分析，結果表明，市場與電信網路技術的緊密結合將能得到較好的收益。
  3. Semiconductor devices - mechanical and climatic test methods - part 26 : electrostatic discharge sensitivity testing ; human body model

    半導體器件.機械和氣候試驗方法.第26部分:靜電放電敏感性試驗.人體模型
  4. Protection of electrostatic discharge susceptible items - worksurfaces - resistive characterization

    靜電放電敏感產品的防護.工作表面.電阻特性
  5. Protection of electrostatic discharge susceptible items - packaging materials or esd sensitive items

    靜電放電敏感性物件的防護.包裝材料或esd敏感件
  6. It is shown in mechanism analysis that 1 / f noise originating from border traps is ~ sensitive to both of the oxide charges and interface traps induced by esd and hci and the similarity coefficient can express the local characterization more thoroughly, while the changes of electrical parameters usually lie on one of the defects

    機理分析表明，起源於邊界陷阱的1 / f噪聲對于靜電和熱載流子誘發的氧化層電荷和界面陷阱兩類缺陷都同時敏感，而相似系數更能反映1 / f信號的局域特性，但電參數的變化通常主要取決于其中一類缺陷。
  7. Protection of electrostatic discharge susceptible items - surface resistance measurement of static dissipative planar materials

    靜電放電敏感性物件的防護.靜態耗散平面材料表面電阻的測量
  8. Based on silicon - piezoresistive method, the paper first gives the theory of array silicon piezoresistive pressure, acceleration sensor, and the design of its incorporated chip, microstructure and out - circuit. several key techniques of making array silicon piezoresistive pressure, acceleration sensor such as 1c technic, mems ( silicon - silicon direct bonding, anodic bonding, anisotropic etching ) is also studied. minuteness engine machining, anode bonding etc. in the paper there are three ways which are examine - form, curve simulanting, to carry out sensors non - linear self - emendating ; adopt the several curves approaching and curve simulating to achieve the aims of sensor error self compensation, fusion technology etc. therefore, it providing referenced values of ways and directions for sensor system directing on

    論文首先以硅壓阻效應原理為基礎，討論了陣列式硅壓力、加速度傳感器的設計原理，並對陣列式硅壓力、加速度傳感器中集成敏感晶元（壓力、加速度） 、總體結構和壓力陣列的信號處理電路進行了設計，在陣列式硅壓力、加速度傳感器的研製中，還研究了半導體平面工藝、大規模集成電路技術、微機械加工技術（硅硅鍵合、靜電封接、各向異性腐蝕）等關鍵技術的應用。
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