高摻晶體 的英文怎麼說

中文拼音 [gāochānjīngtǐ]
高摻晶體 英文
heavily doped crystal
  • 高 : Ⅰ形容詞1 （從下向上距離大; 離地面遠） tall; high 2 （在一般標準或平均程度之上; 等級在上的） above...
  • 摻 : 摻動詞[書面語] （持; 握） hold
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. The dielectric constants were relatively high either lattice aberrance was tiny or crystal content was large

    摻tb薄膜的介電常數在晶格畸變程度小時和在摻tb后使晶體含量出現最大值時都較高。
  2. It has been found that all the elements in the addition act respectively in the way that affect the material ' s properties during the calcining process and the increase of the pms / pzn ratio can weaken the stability of the crystal structure of the sintered ceramics and cause the crystal structure transformation from the tetragonal to the rhombohedral as well

    發現多元壓電陶瓷材料中，無論是主加組元還是微量摻雜，預燒階段，它們在陶瓷中的作用都表現為單獨離子對陶瓷結構和性能所起的作用。燒結后，隨著pms pzn相對量的提高，陶瓷晶體結構由四方相向三方相轉化，同時穩定性下降。
  3. It seems the ncz silicon has a higher bdt temperature compared with cz silicon ' s. it is suggested that the elastic effects and the electronic effects of nitrogen doped in silicon made the bdt temperature higher. the observation of fracture surface showed that it was curves at high temperature in brittle fracture, but smooth planes at room temperature

    當溫度升高達到硅材料的脆塑轉變時，材料的斷裂強度有個很大的提高，但是首次發現含氮硅單晶卻不明顯，而且摻氮的硅單晶脆塑轉變溫度比普通單晶高，可能是氮的摻入改變了硅材料的內部晶體結構及電子結構。
  4. Preparation of stibium - doped conductive tin dioxide nanocrystalline by high temperature burning

    高溫燒制導電摻銻二氧化錫納米晶體
  5. Particularly, cr4 + - doped crystals as passive q - switch ( saturable absorber ) have got extensive attention, such as cr4 + : yag ， cr4 + : gsgg ， cr4 + : mg2sio4 and cr4 + : yso, which have the advantages of wild absorption band, good saturable absorption, long restored time, good photo - chemical stability, no fading, good thermal conductivity and high damage threshold

    特別是近年來，摻cr4 +離子的各種晶體如cr4 + : yag ， cr4 + : gsgg ， cr4 + : mg2sio4和cr4 + : yso等作為被動調q開關受到了廣泛的關注。它們具有很寬的吸收帶和良好的飽和吸收性質，恢復時間較長，光化學性質穩定，無退化現象，熱導性好，損傷閾值高。
  6. The cooler and temperature controller of nd : yap rod are improved and the lower dopant concentration of the nd : yap ( 0. 6 at. % )

    除了改進冷卻控溫系統外，選擇摻雜濃度較低的激光晶體，有利於高效散熱，得到更穩定的激光輸出。
  7. ( 1 ) effects of externally applied electric fields on photorefractive two - beam coupling are analyzed. theoretic dependence of the intensity gain factor on applied field e0 in sbn : 60 is presented. and the experimental results obtained in two sbn : 61 : cr crystal samples with different dopant concentration show clearly that for properly applied fields, a larger f can be achieved effectively than that obtained with no field applied

    由兩塊不同摻cr濃度的sbn 61 cr晶體得到的實驗結果同時表明，適當的外電場作用能夠有效提高晶體的二波耦合增益，並且，外電場的作用使晶體的響應速度大大提高，而晶體的最佳耦合角與外電場之間沒有明顯的依賴關系。
  8. It is shown that with increasing doped value x, structures of the crystals change its low symmetry into high symmetry and doping with praseodymium can induce larger crystal structure distortion than other elements

    發現塊材樣品隨摻雜量x增加，晶體結構由低對稱向高對稱性轉變。通過摻雜pr元素可以引起晶格較大畸變。
  9. The laser crystal also presents other attractive features, such as strong and broad absorption band, makes this laser medium to be an excellent candidate for efficient diode pumping without temperature controlling

    該晶體可摻入較高濃度的yb離子（ 0 . 5 ? 10 ） ，且不存在濃度猝滅。
  10. The voltage of lithium - intercalation reaction, impedance and structural stability of intercalation - type cathode material were analysed and calculated. theoritical results show that the reaction voltage depends on the content of lithium and the bond energy, and that the key ways to lower the electrode impedance are to increase the electronic conductivity of the electrode and the diffusion coefficient of lithium ion in the host and to decrease the size of powder. in addition, the thermal stability of lithium - insertion structure can be improved by using crystallographic co - lattice theory and doping treatment

    本文從嵌入式陰極材料的嵌鋰反應的電壓、阻抗及結構穩定性的分析和理論計算著手，得到了電壓取決于基體中各種離子間的鍵能及鋰含量、降低電極阻抗的關鍵是提高電子型導電性和li ~ +在基體中的擴散系數及減小粉末粒度的理論依據及其利用晶體的共格原理和摻雜改性的方式來提高材料嵌鋰結構的熱穩定性的設計思路。
  11. With the very low water to cement ratio, rpc has ultra - high strength high ductility and low permeability. in this paper, the compressive strength of rpc can reach to a high point with the number approximately 135mpa. as illustrated from the study results, we can approve some fundamental conclusions : there are big effects on rpc with deferent kinds and properties of raw materials and deferent curing conditions ; stress - strain curve shows the process of destroy with rpc samples ; x - ray diffraction analysis indicates that heat treatment at temperatures 90 accelerate the hydration of rpc sharply, therefore, mechanical and microstructural properties of rpc are highly dependent on heat treatment ; it is believed that rpc materials have excellent resistance to chloride permeability ; during the heat treatment, the shrinkage of rpc developed quickly because of chemical reactions ; the rpc with slag mostly has the advantage of rpc without slag about resistance to solutions corrosion

    研究結果表明：通過對rpc各組分摻量變化的研究，可以找到rpc的最優配合比；試件成型后的熱養護制度對rpc的性能影響巨大； rpc的抗壓應力?應變曲線可以反映出試件受破壞時微裂紋的擴展情況，剛纖維的摻入可以大幅改善rpc的韌性； rpc在成型后存在較大的收縮，而其中的化學收縮要遠遠大於乾燥收縮； rpc具有很強的抗氯離子滲透性能，漿體的密實度很高；通過x射線衍射實驗，可以發現rpc的膠凝體中ch晶體已經幾乎不存在，膠凝體主要由c - s - h凝膠和未水化水泥顆粒組成；在抗溶液侵蝕的實驗中，摻礦渣rpc的抗溶液侵蝕性能在絕大多數情況下要好於不摻礦渣試件，酸、堿溶液和浙江工業大學碩士學位論文摘要一些鹽溶液都會對rpc的結構產生侵蝕作用，但是機理各有不同。
  12. In this paper, pure and doped ktp crystals were grown from the flux using a top - seeded method, and special technique have been used to lower the electrical conductivity to three orders of magnitude than common flux ktp, the values is up to 10 - 10 ( cm ) - 1, this overcame the shortcoming that common flux ktp cannot be used in e - o application field because of having higher electrical conductivity. the growth condition, doped elements and annealing technology were investigated. single crystals of ktp with high quality and big z - cut cross section were obtained by optimizing the parameter of crystal growth

    本實驗採用頂部籽晶熔劑法生長了純的以及不同摻雜的ktp晶體，用特殊工藝處理技術將普通熔劑法ktp的電導率降低了三個數量級，達到了10 ~ （ - 10 ） （ cm ） ~ （ - 1 ） ，解決了普通熔劑法ktp晶體由於離子電導率太大而無法用於電光應用領域的困難；對ktp晶體的生長條件、摻雜元素以及退火工藝等進行了研究，通過優化生長工藝技術參數，突破了工藝技術生長難關，得到了高光學均勻性、具有大z切面的ktp單晶。
  13. With the development of doping technology, the formation of the base region in high - voltage transistor can be made by b diffusion technology, b - a1 paste - layer diffusion technology, close - tube ga - diffusion technology and open - tube gallium - diffusion technology

    隨著摻雜工藝的不斷發展，高反壓晶體管基區的形成經歷了擴硼工藝、硼鋁塗層擴散工藝、閉管擴鎵工藝到開管擴鎵工藝的發展。
  14. On photo - electric properties of nanwire mosfet with its crystal microstructure

    未摻雜納米線高電阻與其晶體微結構光電性質
  15. In this thesis, the mechanism of high conductivity along c direction in ktp crystal grown by high temperature solution method was firstly elucidated. a scheme of doping certain elements to reduce the conductivity of ktp crystal along c direction was put forward

    本文首先闡述了導致高溫溶液法生長的ktp晶體c向電導率較高的形成機理，提出採用摻入特定元素的離子來降低ktp晶體c向電導率的方案。
  16. A ) si thin film with sub - micro thickness was epitaxial grown on heavy - doped si substrate by ultra high vacuum chemical vapor deposition ( uhv - cvd )

    A ）利用超高真空化學氣相沉積（ uhv - cvd ）技術在重摻si襯底上生長高晶體質量的亞微米級薄硅外延片。
  17. Under the condition that the variance of temperature in the furnace was lower than 2. 5oc, the accuracy of temperature control was higher than 0. 2oc and the speed of temperature drop was 0. 2oc ~ 2oc, we grew doped - ktp crystals without obvious defects by immerged - seeded solution method

    在晶體生長爐溫場均勻性高於2 . 5oc 、控溫精度高於0 . 2oc 、降溫速度為0 . 2oc ~ 2oc的條件下，採用浸沒籽晶緩慢降溫法生長出宏觀無明顯缺陷的摻質ktp晶體。
  18. The appropriate calcinations temperature is about 700, and the tetragonal sno2 phase crystal structure of the particles remained unchanged when sb was doped to it. as the calcinations temperature increasing and the calcinations time prolong, the size of particles grows and the crystallization tend to be complete. study on the electrical properties of ato powders prepared by hydrothermal synthesis was performed in - depth, the most optimal electrical properties are obtained at doping ratio of 11 percent

    水熱法制備的ato納米粉體在熱處理溫度700左右較為適宜，銻的摻雜並未改變粉體的四方相金紅石結構，隨銻摻雜量的增加，粉體的粒度變小；隨熱處理溫度的升高和熱處理時間的延長， ato粉體的粒度增大，晶體結構趨于完整。
  19. Based on the requirement and target of the projects, firstly, pcf bragg grating are investigated theoretically and experimentally. moreover, the effects of filling high refractive index material ( nematic liquid crystal, nlc ) in pcfs on the transmission mechanism and propagation properties are studied by using plane - wave method and finite - element method ( fem ), farther, several novel pcfs are proposed and designed. lastly, we propose and demonstrate a clad - pumped er3 + / yb3 + - codoped fiber laser, which integrate all performances of broad - band tunable wavelength, uniform output power spectrum, high repeat frequency and high average power to together

    本論文選題于國家973 、 863以及國家自然科學基金等項目，結合課題的要求和主要目標，在對光子晶體光纖（ pcfs ）傳輸特性研究的基礎上，首先對光子晶體光纖光柵進行了理論和實驗研究;然後，採用平面波展開法和有限單元法分析了在光纖的空氣孔中填充高折射率液晶對光纖傳導機制和傳輸特性的影響，提出並設計了幾種新型光子晶體光纖;最後，提出並研製成功連續可調諧、輸出功率譜均衡的全光纖化、高功率包層泵浦鉺鐿共摻光纖激光器實驗樣機。
  20. A conclucion can be drawed by study the effection of p, that is, lower p dopant is good to improve the properties of ybyp _ xv _ ( 1 - x ) o _ 4 crystal

    考察了p含量對晶體性能的影響，得出初步結論：當少量摻雜p時對提高ybyvo4晶體性能有利。
分享友人
分享到 Line

分享到臉書