高摻半導體 的英文怎麼說
中文拼音 [gāochānbàndǎotǐ]
高摻半導體
英文
highly doped semiconductor-
A new laser source of optical communication, erbium - ytterbium codoped phosphate glass waveguide laser that was provided with more prominent performance than semiconductor distribution feedback ( dfb ) laser, has been investigated globally from 1990s. the laser can meet many rigorous demands of wdm systems. the 1. 54 m laser emitted by the laser accords with the interrelated standard of international telecommunications union ( itu ), therefore, a splendent foreground can be predicted about this kind of laser in future optical communication
基於鉺、鐿摻雜磷酸鹽玻璃基片的光波導激光器是一種新型通信光源，具有傳統的分佈反饋半導體激光器所不能比擬的優點，能滿足波分復用/密集波分復用技術對光源提出的諸多高新要求，所發射的1 . 54 m激光符合國際電信聯盟規范，在未來光通信中有著廣闊的發展前景。Semiconductor luminescence materials and devices were developed as one of semiconductor technology in 1960. the luminescence devices made with the materials had developed quickly. but the pure semiconductor materials could not better because the luminescence efficiencies were lower. doping is very important in order to improve the luminescence efficiency
半導體發光材料和器件是六十年代發展起來的半導體技術中的一個分支，單一的純凈本徵半導體的性能往往不能滿足實際的需要，發光效率或發光幾率低，發光強度弱，提高發光效率的有效途徑就是進行材料的摻雜改性。Using this expression to calculate the optimum rare - earths oxides ( nd2o3, ceo2 and la2o3 ) content of zinc oxide varistor, the quantitative calculation results are in accordance with the experimental results approximately. the double shottky potentical barrier was showed in form of catoon using flash, from which we can comprehend the conduction theory of zinc oxide varistor. the electrical properties of varistor can be improved depend on it
運用固體物理、半導體和電子薄膜材料的相關理論，建立數學模型，推導出了最佳摻雜含量的理論計算式，並將之推廣到高溫燒結的氧化鋅壓敏陶瓷材料，運用這一計算式定量計算ndzo3 、 ceoz和lazo3等稀土摻雜的最佳含量，計算結果與本文的實驗結果比較符合。Much attention has been paid on pure or doped zirconia thin films because of their high melting point, low heat conductivity, high ionic conductivity and chemical durability. in the case of metal - oxide - semiconductor ( mos ) devices and high - temperature superconductor ( hts ) wires, zirconia epitaxial thin films are promising buffer layers and have been intensely studied in the past two decades
純的或摻雜的氧化鋯薄膜因其高熔點、低熱導率、高離子導電能力和高溫化學穩定性而受到相當的重視，而且氧化鋯外延薄膜在金屬氧化物半導體（ mos ） 、高溫超導帶材等領域的應用受到越來越多的關注。This part emphasizes the synthesis of nanoarrays, aiming at controlling the size and distance of nanocrystallites using calixarene derivatives by altering the size, length and chemical structure of the organic molecules ; 2. this part emphasizes in situ synthesis strategy for fabrication of polymer network of zns based nanopowder, aiming at size controls, coating and preventing agglomeration following " one - pot " synthesis ; this method fits to low cost, large scale production ; 3. according to development in zno nanomaterials, we first report on the synthesis, characterization of amorphous zno, aiming at describing the principles and approaches of synthesis techniques, optical properties, spatial structure and doped effect ; the amorphous zno displays cage - like structure, showing a strong ultraviolet emission while the visible emission is nearly fully quenched, a potential uv - emission material ; 4
本論文以量子結構自組裝為出發點，提出利用杯芳烴及其衍生物的化學受限反應實現尺寸可調半導體納米粒子自組裝；提出有機聚合網路原位組裝zns基納米熒光粉方法，把熒光粉的納米化、包敷、防團聚在「一鍋」反應中完成，適于低成本，批量生產；根據當前zno的研究情況，我們首次合成了非晶zno ，研究了它的光學性質，確定了它的結構，並對其摻雜進行了初步的研究，非晶zno表現出強的深紫外發光特性，而可見發射非常弱，是一種有巨大潛在應用價值的深紫外發光材料；利用非晶zno的亞穩特性，對晶化過程中非晶zno納米晶zno三維受限量子結構特性，界面特性進行了深入的研究；利用固相熱分解一般受擴散控制特性，實現了尺寸可控的zno三維量子結構的自組裝；利用非晶zno的高度分散性，容易均勻成膜特性，實現了非晶籽晶誘導低溫液相外延自組裝生長高取向zno晶體薄膜。Cubic boron nitride ( c - bn ) thin films have significant and potential technological application prospect in cutting tools, electronic and optical devices, etc. because c - bn possesses excellent physical and chemical properties, such as ultrahigh hardness only inferior to diamond, inertness against oxidation at high temperature, uneasy reaction with iron group metal, as well as the possibility of using as n - and p - type doped semiconductors
立方氮化硼（ c - bn ）具有優異的物理化學性質，如僅次於金剛石的硬度、高溫下強的抗氧化能力、不易與鐵族金屬反應、可n型摻雜也可p型摻雜成為半導體等，立方氮化硼（ c - bn ）薄膜在切削刀具、電子和光學器件等方面有著潛在的重要應用前景。Cubic boron nitride ( cbn ) thin films have significant and potential technological application prospect in cutting tools, electronic and optical devices, etc., because cbn possesses excellent physical and chemical properties, such as ultrahigh hardness only inferior to diamond, inertness against oxidation at high temperature, uneasy reaction with iron group metal, as well as the possibility of using as n - and p - type doped semiconductors
立方氮化硼（ cbn ）具有優異的物理化學性質，如僅次於金剛石的硬度、高溫下強的抗氧化能力、不易與鐵族金屬反應、可n型摻雜也可p型摻雜成為半導體等，立方氮化硼（ cbn ）薄膜在切削刀具、電子和光學器件等方面有著潛在的重要應用前景。There are many things can be used as electrorheological ( er ) materials, such as polymer semiconductor er materials, inorganic nonmetal materials et al. the advantage of polymer semiconductor er materials attributes to theirs high mechanical mass, lower density and fine hydrophobic properties, at the same time, theirs conductivity can be adjusted by doping and after - treatment, but theirs poor thermo - stability confines theirs extensive use
有許多種材料都可以用作電流變材料，例如，聚合物半導體材料，無機非金屬材料等，聚合物半導體er材料的優點在於有較高的力學值、較小的密度、優良的疏水性，可以通過控制摻雜量和后處理程度有效控制電導的大小。However, the pure cdte films have high electrical resistivity and this is mighty unfavourable to improve the conversion efficiency of cdte solar energy cells, and the best way is to doping donor or acceptor in pure cdte films
但本徵cdte薄膜均為高阻半導體，這對于提高cdte薄膜太陽能電池的光電轉換效率是極為不利的，要提高cdte薄膜的光電性能必須通過施主或受主的摻雜。Coupling efficiency not only affects fiber communication relay distance, but also affects the performance of edfa and semiconductor light amplifier ( sla ). so it is very important to improve coupling efficiency and reduce its cost. according coupling theory, the coupling of laser diode to single mode fiber is to meet the mode field diameter match and the phase match
它不僅直接影響光纖傳輸的中繼距離，而且對改善ld泵浦摻鉺光纖放大器（ ldp - edfa ） ， ld泵浦固體半導體激光器（ ldp - ssl ） 、半導體光放大（ sla ）等光通信器件及系統的性能上，在提高他們的性價比有著十分重要的意義。We have investigated the influence on the character of cdte thin films with different conditions and parameters. secondly, in normal temperature, cdte thin films are high resistance semiconductor, for improving its electricity capability, we commonly inject benefactor or acceptor impurities into the pure cdte thin films, the ion influx technique is a good method among many adulteration means. at present, the literatures on the doped cdte thin films by the ion influx technique have a fat lot reports
本論文首先採用近距離升華法在不同基片上制備cdte薄膜，研究了不同工藝條件和參數對cdte薄膜性質的影響。其次，在常溫下，本徵cdte薄膜均為高阻半導體。為了改善其導電性能，通常向cdte薄膜中摻入施主或受主雜質，其中離子注入技術是摻雜方法之一。分享友人