高溫外延 的英文怎麼說

中文拼音 [gāowēnwàiyán]
高溫外延 英文
high temperature epitaxy
  • 高 : Ⅰ形容詞1 （從下向上距離大; 離地面遠） tall; high 2 （在一般標準或平均程度之上; 等級在上的） above...
  • 溫 : Ⅰ形容詞（不冷不熱） warm; lukewarm; hot; gentle; mild Ⅱ名詞1 （溫度） temperature 2 （瘟） acute ...
  • 外 : Ⅰ名詞1 （外面） outside; external side 2 （外國） foreign country 3 （以外） besides; beyond; in ...
  • 高溫 : high temperature; elevated temperature; hyperthermia; megatemperature; inferno
  1. The globalization course was that the preformed texture recrystallized and became the granular equiaxed grain, when the temperature rose and the holding time prolonged, the granular grain melted at some area and at the liquid - solid interface the grain globalized at the role of the curvature overheated

    過程機制為：擠壓形變組織在加熱過程中首先發生再結晶長大變為顆粒狀等軸晶；隨溫度升高和保溫時間延長，等軸晶發生局部熔化，液固界面的曲率過熱使晶粒外形向球狀轉變。
  2. Besides, the growth of gasb expitaxy film was monitored by reflection high energy electron diffraction ( rheed ). the rheed images and intesity oscillation are collected by computer system. it showed that the gasb film prepared in 400 was amorphous and it became monocrystalline when the temperature rose to 500. atomic force microscope ( afm ) was applied to analyse the surface morphology of the films which were grown in diffrent growth rates or substrate temperature. the analysis were compared to simulation results. the experiment results indicated it was easy to form clusters when the rate of growth is high or

    此外，本文通過反射式高能電子衍射（ rheed ）監測了gasb外延薄膜的生長，利用rheed強度振蕩的計算機採集系統實現了rheed圖像和rheed強度振蕩的實時監測。實驗發現在400生長的gasb薄膜為非晶態，溫度升高到500薄膜轉變為單晶。利用原子力顯微鏡對不同生長速率和襯底溫度生長的gasb薄膜的表面形貌進行觀察分析，並與模擬結果進行比較。
  3. During this time both the monthly average algae density and lasting time increased year after year. the main algae forming algae bloom was cyanophyta and the dominant generas were microcystis. the accumulation of nutrients ( such as total nitrogen and total phosphorus ) with high concentration, high temperature of water and strong sunshine caused the algae bloom

    結果表明，水溫較高的夏秋季（一般為7 9月）是天津市城市供水水源的藻類高發期；近幾年，高藻期含藻量呈逐年增加趨勢，持續時間呈逐年延長趨勢；高藻期水源水以藍藻為主，所佔藻類總數最高和最低比例分別為91和70 ，其中的優勢屬為微囊藻屬；水源水中高含量的氮、磷等營養鹽是藻類高發的內在因素，水溫、光照等是外在誘發因素。
  4. The purpose of this dissertation is to study the effect of substrate on the characteristics and microstructure of high temperature superconducting yba2cu3o7 - thin film, and well c - axis oriented epitaxial ybco thin films have been deposited on both laalo3 ( 100 ) and r - plane sapphire al2o3 ( 102 ) substrates by inverted cylindrical dc sputtering ( icds ) technique

    =本論文的目的是研究基片對薄膜結構和性能的影響關系，採用倒筒靶直流濺射技術在在laalo3 （ 100 ）和r -平面的藍寶石（ al2o3 （ 102 ） ）兩種基片上制備出c軸取向的外延高溫超導yba2cu3o7 -薄膜。
  5. The interface behavior between essence and ethylene - vinyl acetate copolymer pallets was studied so that necessary data were obtained to guide the preparation of fragrant masterbatch. the adsorption type and wettability between essence and the copolymer pallets were analysed by measurements of fourier transform infrared spectrum, surface tension, contact angle and specific surface area. the technical factors affecting absorptivity such as the charge ratio, temperature, pressure and stirring speed were studied by series of adsorption experiments. the results showed that the adsorption of essence on the surface of ethylene - vinyl acetate copolymer pallets is physical in nature. essence couldn ' t moisten the surface of ethylene - vinyl acetate copolymer pallets absolutely, but it could be soaked into the surface of the pallets partly. adsorptivity could be increased by enhancing the temperature, pressure and stirring speed, but the extension of adsorption time had little influence on adsorptivity

    研究了香精與乙烯/醋酸乙烯共聚物粒子之間的界面行為，以便為香型母粒的制備提供必要的理論依據.利用傅立葉變換紅外光譜、表面張力、接觸角及比表面面積等測定手段，分析了香精與載體之間的吸附類型和潤濕作用.並通過一系列吸附實驗，討論了配料比、溫度、壓力、攪拌等工藝條件對吸附量的影響.結果表明，香精在乙烯/醋酸乙烯共聚物粒子表面的吸附為物理吸附；香精無法完全潤濕載體粒子表面，但可以對其形成部分浸潤；提高溫度、壓力、攪拌速度可以增加吸附量，而延長吸附時間對增加吸附量貢獻不大
  6. Abstract : the interface behavior between essence and ethylene - vinyl acetate copolymer pallets was studied so that necessary data were obtained to guide the preparation of fragrant masterbatch. the adsorption type and wettability between essence and the copolymer pallets were analysed by measurements of fourier transform infrared spectrum, surface tension, contact angle and specific surface area. the technical factors affecting absorptivity such as the charge ratio, temperature, pressure and stirring speed were studied by series of adsorption experiments. the results showed that the adsorption of essence on the surface of ethylene - vinyl acetate copolymer pallets is physical in nature. essence couldn ' t moisten the surface of ethylene - vinyl acetate copolymer pallets absolutely, but it could be soaked into the surface of the pallets partly. adsorptivity could be increased by enhancing the temperature, pressure and stirring speed, but the extension of adsorption time had little influence on adsorptivity

    文摘:研究了香精與乙烯/醋酸乙烯共聚物粒子之間的界面行為，以便為香型母粒的制備提供必要的理論依據.利用傅立葉變換紅外光譜、表面張力、接觸角及比表面面積等測定手段，分析了香精與載體之間的吸附類型和潤濕作用.並通過一系列吸附實驗，討論了配料比、溫度、壓力、攪拌等工藝條件對吸附量的影響.結果表明，香精在乙烯/醋酸乙烯共聚物粒子表面的吸附為物理吸附；香精無法完全潤濕載體粒子表面，但可以對其形成部分浸潤；提高溫度、壓力、攪拌速度可以增加吸附量，而延長吸附時間對增加吸附量貢獻不大
  7. Furthermore, the growth and the study of self - organized quantum dots structures become more and more important recently, and the application of self - organization technique become wider and wider in this thesis, we address the theory of film growth and the growth technique firstly more, the ways and characteristics of surface detection are prescribed we mainly report the growth process, results and discuss of self - organized quantum dots structures in the a12o3 substrates by s - k mode using ecr - mocvd, in the espd - u device the growth art of ain epilayer which is the preliminary foundation of self - organized gan / ain quantum dots structures, including the substrate cleaning, nitridation, the growth of buffer and the growth of gan and ain epilayer, is discussed we deliberately compare the test result of rheed xrd and afm and achieved the optimalized condition of ain at last we have successfully realized the growth of ain which is much smooth and better crystal quality moreover, we grow the self - organized gan / ain quantum dots structure in s - k mode because the limits of the heater temperature, we can not grow the atom - smooth epilayer of ain until now so we could not grow better quantum dots which have small diameter and big density but the self - organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increased the thesis study belong to my tutor subject of national nature science foundation ( 69976008 )

    本論文主要論述了在espd - u裝置上，採用電子迴旋共振等離子體增強mocvd （ ecr - pamocvd ）方法，在藍寶石襯底上通過s - k模式自組裝生長gan aln量子點結構的生長工藝、結果及討論。而重點分析了自組裝生長量子點之前的aln外延層生長工藝，包括襯底清洗、氮化、緩沖層的生長和gan 、 aln外延層的生長；通過高能電子衍射、 x射線衍射和原子力顯微鏡測試，並且對這些測試結果進行了詳細的比較研究，得出了較優化的工藝條件，生長出了晶質較好、表面較平整的aln外延層；進而採用s - k模式自組裝生長了gan aln量子點結構。由於實驗裝置加熱爐溫度的限制，我們沒有能夠生長出原子級平滑的aln外延層表面，因而沒能夠生長出密度比較大和直徑比較小的量子點。
  8. Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

    Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige
  9. Ito substrate with an smooth surface of 0. 2nm rms roughness measured by afm was obtained by the developed pre - cleaning processing procedure. mbe growth of znsxse1 - x thin films on ito coated glass substrates were carried out using zns and se sources. the xrd 9 / 29 spectra resulted from these films indicated that the as - grown polycrystalline znsxse1 - x thin films had a preferred orientation along the ( 111 ) planes

    採用分子束外延技術在ito導電玻璃上低溫沉積了zns _ xse _ （ 1 - x ）多晶薄膜，詳細研究了薄膜制備的工藝參數，在最佳沉積條件下，制備獲得了晶型為立方閃鋅礦，並具有（ 111 ）面高度定向生長結構的柱狀zns _ xse _ （ 1 - x ）多晶薄膜，其rms表面粗糙度最小可達1 . 2nm 。
  10. Wear - proof body is manufactured from bar stock of high temperature alloy. double - compound structure of wear - proof coated with double wear - proof layer prolongs service life

    耐磨頭本體採用耐高溫合金鋼棒料整體鉆孔，外噴焊雙層耐磨層，形成雙重復合結構，延長耐磨熱電偶的使用壽命。
  11. This indicated an absence of deep trapping centers. this peak was still observed at room temperature, temperature. the presence of this intrinsic near - band - gap emission line in the pl spectrum even at room temperature is a further indication for the high quality of the epitaxial layer

    Znse薄膜樣品在77k時，光致發光譜中只觀測到了近帶邊的發射，而且這一發光一直持續到室溫，說明在si襯底上lp - mocvd外延生長的znse薄膜具有較高的質量。
  12. By the essential control of the initial stage of - material growth, the high - quality crystal films can be obtained. by using mocvd technology, studies of some kinds of methods such as hydrogen - terminated, nitridation, plasma - assisted, growth of two stages and sputtering buffer layers have been conducted. by measuring of xrd, pl, sem and tem, and analysis of spectra of xrd, raman scatting, oa, and pl at different temperatures, we observed that the crystal quality has been improved markedly

    本文利用mocvd技術，採用各種對si襯底處理的方法，如氫終止法、氮化法、等離子體轟擊方法、兩步生長法、濺射緩沖層法等進行了試驗與研究，通過x射線衍射技術（ xrd ） 、光致發光技術（ pl ） 、掃描電子顯微術（ sem ） 、透射電子顯微術（ tem ）等檢測，並對其x射線衍射光譜、拉譜光譜、吸收光譜及不同溫度下的光致發光光譜分析，發現外延晶體的生長質量得到了明顯提高。
  13. Much attention has been paid on pure or doped zirconia thin films because of their high melting point, low heat conductivity, high ionic conductivity and chemical durability. in the case of metal - oxide - semiconductor ( mos ) devices and high - temperature superconductor ( hts ) wires, zirconia epitaxial thin films are promising buffer layers and have been intensely studied in the past two decades

    純的或摻雜的氧化鋯薄膜因其高熔點、低熱導率、高離子導電能力和高溫化學穩定性而受到相當的重視，而且氧化鋯外延薄膜在金屬氧化物半導體（ mos ） 、高溫超導帶材等領域的應用受到越來越多的關注。
  14. This part emphasizes the synthesis of nanoarrays, aiming at controlling the size and distance of nanocrystallites using calixarene derivatives by altering the size, length and chemical structure of the organic molecules ; 2. this part emphasizes in situ synthesis strategy for fabrication of polymer network of zns based nanopowder, aiming at size controls, coating and preventing agglomeration following " one - pot " synthesis ; this method fits to low cost, large scale production ; 3. according to development in zno nanomaterials, we first report on the synthesis, characterization of amorphous zno, aiming at describing the principles and approaches of synthesis techniques, optical properties, spatial structure and doped effect ; the amorphous zno displays cage - like structure, showing a strong ultraviolet emission while the visible emission is nearly fully quenched, a potential uv - emission material ; 4

    本論文以量子結構自組裝為出發點，提出利用杯芳烴及其衍生物的化學受限反應實現尺寸可調半導體納米粒子自組裝；提出有機聚合網路原位組裝zns基納米熒光粉方法，把熒光粉的納米化、包敷、防團聚在「一鍋」反應中完成，適于低成本，批量生產；根據當前zno的研究情況，我們首次合成了非晶zno ，研究了它的光學性質，確定了它的結構，並對其摻雜進行了初步的研究，非晶zno表現出強的深紫外發光特性，而可見發射非常弱，是一種有巨大潛在應用價值的深紫外發光材料；利用非晶zno的亞穩特性，對晶化過程中非晶zno納米晶zno三維受限量子結構特性，界面特性進行了深入的研究；利用固相熱分解一般受擴散控制特性，實現了尺寸可控的zno三維量子結構的自組裝；利用非晶zno的高度分散性，容易均勻成膜特性，實現了非晶籽晶誘導低溫液相外延自組裝生長高取向zno晶體薄膜。
  15. In addtion, the growth rate of low temperature insb buffer layer was 0. 26 m / h, which was obtained by rheed intensity oscillation curves. growth temperature of insb epilayers were investigated with sem and dcxrd, and it was found that the optimum temperature was 440. a 2. 1 m insb layer grown at 440 had an x - ray rocking curve of 412 arcsec, the strain relaxtion was about 99. 02 %

    通過掃描電鏡形貌觀察與能譜分析發現:溫度較低時sb的表面遷移率低，容易在表面堆積;結合x射線雙晶衍射分析，確定高溫insb外延生長的最佳襯底溫度為440 ，該溫度下生長2 . 1 m的樣品x射線半高峰寬為412 ，應變弛豫99 . 02 % 。
  16. So that film ybig / ggg was grown in proper temperature, then film ybilg was grown onto ybig / ggg. to improve the magneto - optical properties of films, film ybig was grown onto substrate ybilg which was sliced from garnet ybilg and polished. the tests of magneto - optical properties of the grown thin films showed that through combining two types of rare - earth ion garnet films with opposite signs of farady rotation temperature coefficients, high faraday temperature stability was reached due to temperature compensation effect, which indicated of great potential for application

    反復實驗結果表明， ybiig薄膜的最佳外延溫度區間比ybig薄膜的低約10以上，因此，根據實驗結果選擇合適的溫度，我們先在ggg上外延生長ybig薄膜，然後在ybig上再外延ybiig薄膜，成功製成了ybiig ybig ggg復合膜結構；為了進一步提高性能，我們還將以前生長的ybiig單晶定向切割制為基底，在其上進行復合外延。
  17. The genomics dna of the transformants was extracted and assayed by pcr with nptii primer camv35 / cp primer and the results indicated that the chloroplast shsp gene has been integrated into the genomics of the tomato. then the transgenic tomato were exposed to low temperature ( in winter, on natural condition, the top temperature was 15 ? and the lowest temperature was 5 and a set of physiology parameters were measured after 6 weeks. the results were shown as follows : 1 ) effect on growth height of the transgenic tomato and the control plants after 6 weeks at low temperature showed that the transformants had been grown faster than the control. in addition, the leaves of the control plants appeared to be much reder than the transgenic tomato, and the change were obvious followed by far from the treated time at low temperature, which suggested that the constituently expression of the chloroplast shsp had some protective fountions to the tomato at low temperature

    提取轉基因番茄基因組dna ，分別以npt和35s cp引物對其進行pcr分析，結果表明葉綠體shsp基因已整合進番茄基因組中；對轉基因番茄進行低溫處理（冬季，自然條件下（無加熱的溫室） ，白天最高溫度15 ，夜間最低溫度5 ） ，生長6周后，檢測轉基因番茄的系列生理指標，主要結果如下： 1 ）生長勢：測量轉基因番茄與對照（未轉基因番茄）的株高，結果顯示轉基因植株生長明顯快于對照，且從外觀上看到對照葉片發紅程度遠大於轉基因植株，隨著低溫時間延長，對比更加明顯，說明葉綠體shsp的組成性表達在低溫下對番茄具有一定的保護作用。
  18. Larger growth pressure of buffer layer led to the dramatic increase of structural and optical quality of gan epilayer, and the improvement in quality was attributed to the transition of growth mode from 3d to quasi 2d, which was revealed by scanning electron microscope

    發現緩沖層的生長壓力變化對退火后緩沖層表面的狀態影響極大，增大緩沖層生長時的反應室壓力可以明顯提高外延gan的晶體質量和光學質量。通過sem分析，發現提高緩沖層生長壓力時，高溫gan生長明顯經歷了從三維生長到二維生長的過渡，晶體質量明顯提高。
  19. There exists a strong correlation between initial surface morphology prior to ht growth and ht gan growth mechanism and eventual threading dislocation density in epilayers

    發現高溫生長前樣品的表面狀態對隨後生長的gan生長機制及最終外延層中的位錯密度有很大影響。
  20. By now, the research has been mature on enhancing the recrystallization temperature and mechanics performance of molybdenum wire in order to prolong its life span and enlarge its employ boundary by doping method. some of the doped molybdenum wire has been manufactured

    到目前為止，國內外對于用摻雜的方式提高鉬絲再結晶溫度和綜合力學性能以延長其高溫下的使用壽命、擴大其使用范圍的研究已比較成熟，有些已投入生產。
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