高溫退火 的英文怎麼說

中文拼音 [gāowēntuìhuǒ]
高溫退火 英文
annealing at elevated temperatures
  • 高 : Ⅰ形容詞1 （從下向上距離大; 離地面遠） tall; high 2 （在一般標準或平均程度之上; 等級在上的） above...
  • 溫 : Ⅰ形容詞（不冷不熱） warm; lukewarm; hot; gentle; mild Ⅱ名詞1 （溫度） temperature 2 （瘟） acute ...
  • 退 : 動詞1 （向後移動） retreat; draw back; move back 2 （使向後移動） cause to move back; remove; wit...
  • 火 : fire
  • 高溫 : high temperature; elevated temperature; hyperthermia; megatemperature; inferno
  • 退火 : [冶金學] anneal; annealing; back-out
  1. When the two reactants were simply mixed by crush, they reacted violently and produced carbon spheres with a diameter of 50 - l00nm and sodium chloride ( nacl ) was encapsulated within the outer amorphous carbon shells, which could be confirmed by sem and tem. by annealing at 1400 ? to drive the encapsulated nacl away, hollow carbon spheres were left with a novel mesoporous structure, as presented in hrtem

    實驗中將兩種反應物通過直接擠壓混合后加熱反應，得到的無定型球狀碳材料經tem照片證實直徑為50 - 100納米，而且中間包裹氯化鈉（ nacl ）顆粒； xrd等結果顯示，高溫退火併徹底清除nacl后形成的中空碳球已經部分石墨化。
  2. Addition agent for mgo used on the silicon steel the agent can improve qualities of oriented silicon - steel coatings, enhance magnetic properties of silicon steel and decrease the finishing annealing emperature and time in manufacturing of oriented steel

    作用：專用於取向硅鋼片高溫退火隔離塗層，是國內新的取向硅鋼塗層用氧化鎂，該塗層具有國內第二代硅鋼氧化鎂的透氣性，又具有納米氧化鎂的活性。
  3. The experimental results showed that high density of oxygen precipitation and induced - defects were formed after annealing of wafers at moderate and high temperatures

    重摻砷硅單晶在中高溫退火時形成密度較高的氧沉澱及誘生缺陷。
  4. Preparation of semi - insulating material by annealing undoped inp

    高溫退火非摻雜磷化銦制備半絕緣材料
  5. The results of explosive welding specimen show that the interfaces formed by explosive welding present disciplinary and consecutive shape. there are no distinctiness diffused layers on the interfaces. after elevated temperature annealing, the interdiffused layers formed in interface of nb - 1zr and stainless steel

    研究結果表明：對于nb - 1zr合金和不銹鋼爆炸焊接形成的結合區呈現規律的和連續的波浪形狀，無明顯擴散層；經高溫退火后的結合層形成一定厚度的由nb - 1zr和不銹鋼合金元素互擴散形成的擴散層。
  6. Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

    Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige
  7. Irradiation defects decompounded and recombined with oxygen impurity and large quantity of nucleation centers were introduced in czsi bulk during annealing at 1100. in nitrogen atmosphere, more defects were induced in fast neutron irradiated czsi than in argon atmosphere

    不同氣氛下快中子輻照直拉硅中缺陷形成的差異很大， 1100的高溫退火中，與氬氣氛相比，氮氣氛退火樣品中出現了更多缺陷。
  8. When the alioa content is increasing, the hardness of composites are also increasing and the temperature at which the hardness obviously reducing are increasing too

    隨著aizo 。含量的提高，復合材料的硬度越高，高溫退火后的硬度明顯降低溫度點也越高。
  9. 5. after high temperature annealing the hardness of the composites did not reduced obviously until 973k, this temperature greatly exceeds that of pure copper ( after cold machining, the temperature is 423k )

    本文制備的材料經高溫退火后的硬度明顯降低溫度點為973k ，大大超過了純銅（冷加工態）的423k ，而且熱穩定性能較好。
  10. But long time anneal will cause thermal degradation the whole spin - valve because of interlayer diffusion

    但長時間的高溫退火處理將會造成自旋閥其它各層之間的界面擴散，影響其性能。
  11. S. the composite prepared has excellent heat stability and high - temperature property. during the course of high temperature annealing, the hardness of the composite does not reduce obviously until 973k, while the temperature of pure copper ( after cold machining ) is 423k in the same conditions

    制備的cr _ 2o _ 3 cu復合材料具有良好的熱穩定性及高溫性能，在高溫退火處理過程中，硬度顯著降低點的溫度為973k ，大大高於純銅的硬度降低點。
  12. That is to say, in order to achieve transformation from nonmagnetic fcc phase structure to fct state with strong anti - ferromagnetism, a high post - deposition temperature ( about 260 c ) anneal must be performed

    也就是說，為了使其從非磁fcc相轉變為具有強反鐵磁的fct相結構，需要大約260的高溫退火才能實現。
  13. Additional annealing experiments in nitrogen atmosphere revealed that the heavily damaged region with hydrogen - induced defects appears to be the adsorption center for the outside oxygen to diffuse into the silicon during the high - temperature annealing process, and consequently, broaden the thickness of the box layer. this important finding may provide a possible solution to reduce the cost of the conventional simox - soi wafers while maintaining a desirable box thickness

    獨特設計的氮氣氛退火及分步退火實驗證明了原注入樣品的缺陷層中氫及氫致缺陷的存在使得在退火過程中加速外界氣氛中的氧擴散進來，並成為強捕獲中心使擴散進來的氧滯留于缺陷層從而促使氧缺陷層中的氧沉澱生長，加速了高溫退火中的內部熱氧化過程，從而形成了比傳統相同劑量simoxsoi厚得多的氧化埋層。
  14. Experiments indicate that acetone exhibits the best degreasing effect and that well - arranged porous anodic alumina film is obtained without annealing and electropolishing

    實驗結果表明，採用丙酮除油效果最好，不經高溫退火和電化學拋光仍能得到高度有序的多孔陽極氧化鋁膜，使制備工藝得到了簡化。
  15. Superconducting mgb2 thin films were fabricated on single - crystal sapphire substrate by hfcvd and hpcvd, respectively. the experiments were carried out both in situ and ex situ. in situ method refers to acquiring mgb2 thin films directly during the deposition process. ex situ method is defined as obtaining mgb2 thin films indirectly by post - annealing of precursor b film in high mg vapor pressure at high temperatures

    實驗分原位法和非原位法兩種工藝，原位法是在薄膜沉積過程中直接生成了mgb2超導薄膜；非原位法是先在基片上沉積前驅物b膜，然後將b膜在mg蒸氣中高溫退火得到mgb2超導薄膜。
  16. As is known to all, one of the most important characteristics of sige hbt is the strained sige base growing on the si substrate. generally, the base is required to be very thin so as not to cause the base sige crystal lattice mismatching in subsequent annealing process. also, in order not to increase the thermal noise of device, the base is always heavily doped

    眾所周知， sigehbt的主要特點之一就是在si材料襯底上生長的sige材料是應變的，為了在後續的高溫退火工藝中不發生晶格馳豫現象，通常要求器件的基區要做的很薄，同時為了不增加器件的熱噪音，通常sigehbt基區都是高摻雜的。
  17. Ni ohmic contacts fabricated by traditional evaporation and thermal annealing on temperature of about 1000 have lower contacts resistances. the testing result on 400 does n ' t show it can keep thermal stability

    按常規方法鍍鎳（ ni ）並經1000左右高溫退火得到的歐姆接觸具有更低的室溫比接觸電阻，但400高溫歐姆特性測試表明其熱穩定性不夠好。
  18. That is a hydrolysis procedure of inorganic salts followed by high - temperature annealing process

    這是一個無機鹽水解和高溫退火的過程。
  19. Ito films with low sheet resistance can be obtained by raising the substrate temperature during deposition or annealing in the inert gases at high temperature

    低電阻率的ito膜可以通過提高沉積時的襯底溫度或高溫退火來獲得。
  20. Tem showed that the faults and dislocation loops introduced by the oxygen precipitation were formed when the wafers were annealed at moderate temperature, and polyhedral oxygen precipitation was generated at high temperature

    對氧沉澱形態及誘生缺陷進行了tem測試分析，結果表明，在中溫退火時出現氧沉澱引起的層錯和位錯環；在高溫退火後生成了多面體形狀的氧沉澱。
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