高頻放電管 的英文怎麼說

中文拼音 [gāobīnfàngdiànguǎn]
高頻放電管 英文
high-frequency discharge lamp
  • 高 : Ⅰ形容詞1 （從下向上距離大; 離地面遠） tall; high 2 （在一般標準或平均程度之上; 等級在上的） above...
  • 頻 : Ⅰ形容詞（次數多） frequent Ⅱ副詞（屢次） frequently; repeatedly Ⅲ名詞1 [物理學] （物體每秒鐘振動...
  • 放 : releaseset freelet go
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 管 : Ⅰ名詞1 （管子） pipe; tube 2 （吹奏的樂器） wind musical instrument 3 （形狀似管的電器件） valve;...
  • 高頻 : high frequency
  • 放電 : [物理學] （electric） discharge; electro-discharge; discharging
  1. The factors limiting the frequency band of the wide - band amplifier are introduced. through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. according to the linear theory of transconductance which is applied in the bit circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward

    介紹了限制寬帶放大器頻帶寬度的因素，通過分析mosfet的本徵參數、寄生參數對頻率特性的影響，提出了採用短溝器件、使mosfet工作在飽和區、抬高柵源電壓等提高mosfet特徵頻率的方法；分析了不同電路組態對放大器頻率特性的影響、節點電壓對電壓模電路、電流模電路頻率特性的不同影響，根據應用於雙極晶體管電路的跨導線性原理，提出了採用mosfet構成的電流模放大電路、電流傳輸電路、輸出電路以及由它們所組成的寬帶放大器，獲得了良好的頻率響應。
  2. The second, at the high frequency primary coil, when switch turn on with control signal ( the spwm pulse is modulated ), in the positive or negative semi - period of low frequency modulation signal, transformer coil with same direction voltage. the magnetic flux of transformer core will increase step by step. at the end, it leads to magnetic flux saturation

    二、在高頻變壓器原邊，當開關管接收控制信號脈沖列（經調制的spwm波列）導通時，在低頻調制信號的正半周或負半周內，施加在變壓器繞組上的是同一方向的電壓，變壓器磁芯中的磁通可能將級進地逐漸增加，導致磁芯飽和，造成磁偏或單向磁化，導致低頻電信號放大失真或由於很大的磁化電流而無法正常工作。
  3. During ion source operating, alternating axial magnetic field and azimuthal electric field in discharge tube ionize hydrogen gas purified by hot palladium pipe, and form plasma, hi fifties year, research reports studied on rf ion source are numerous however most of them are concerned about application, and research reports relevant to discharge theory or experiment model are unfrequent

    離子源工作時，放電空間交變的軸向磁場和渦漩電場激發放電管中經鈀管純化后通入的氫氣電離，形成等離子體。 50多年來，關于高頻離子源的研究報告很多，但是，這些研究主要都集中在應用研究方面，有關高頻無極環形放電離子源的理論與實驗模型研究不是很多。
  4. On the base of summarizing and reference to the achievement of uhf complete solid - state high - frequency power amplifier abroad, the author have made a deep research in uhf 10kw electron tube tv transmitter power amplifiers which are widely used inland, and asked for ideas of a lot of engineers of chongqing tv transmitting station, brought forward a practicable solidification scheme under the guidance of prof. gao chao and prof. guoyongcai, and made a successful practice at chongqing tv transmitting station

    筆者在總結和借鑒國內外有關uhf全固態電視發射機高頻線性功率放大器研究成果的基礎上，對目前國內電視發射臺普遍採用的uhf10kw電子管電視發射機高頻線性功率放大器進行了深入研究，並廣泛徵求重慶電視發射臺工程師的意見，在重慶大學高潮教授和郭永彩教授的指導下，提出了切實可行的固態化改造方案，並在重慶電視發射臺實踐成功。
  5. As the great reform and progress in a lot of techniques have been made in the new generation of semiconductor high - frequency power amplifier, valve power amplifiers are replacing by complete solid - state high - frequency linear power amplifiers gradually

    隨著新一代半導體高頻功率放大管的一些突破性變革和多種技術的推陳出新，電真空管功率放大器正在被全固態高頻線性功率放大器逐步取代。
  6. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da1162

    電子元器件詳細規范. 3da1162型硅npn高頻放大管殼額定的雙極型晶體管
  7. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da1722

    電子元器件詳細規范. 3da1722型硅npn高頻放大管殼額定的雙極型晶體管
  8. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da 2688

    電子元器件詳細規范. 3da2688型硅npn高頻放大管殼額定的雙極型晶體管
  9. Specification for harmonized system of quality assessment for electronic components - blank detail specification : case - rated bipolar transistors for high frequency amplification

    電子元器件質量評定協調體系規范.空白詳細規范.高頻放大用管殼額定雙極晶體管
  10. Specification for harmonized system of quality assessment for electronic components - blank detail specification : ambient - rated bipolar transistors for low and high frequency amplification

    電子元器件用質量評估協調體系規范.空白詳細規范.低頻與高頻放大用額定周圍環境的雙極晶體管
  11. Specification for harmonized system of quality assessment for electronic components - semiconductor discrete devices - blank detail specification - case - rated bipolar transistors for high - frequency amplifications

    電子元器件質量評估協調體系.半導體分立器件.空白詳細規范.高頻放大用外殼溫度額定雙極晶體管
  12. High - frequency discharge lamp

    高頻放電管
  13. Lamp controlgear - part 11 : particular requirements for electronic invertors and convertors for high - frequency operation of cold start tubular discharge lamps neon tubes

    燈的控制裝置第11部分：高頻冷啟動管形放電燈霓紅燈用電子換流器和變頻器的特殊要求
  14. The conclusion that ez is more important during the breakdown of rf ion source is made out by comparing ez and e 6 before breakdown, and then, the breakdown criterion of rf ion source is deduced, and the relation between breakdown voltage and pressure is analyzed too

    通過比較擊穿前高頻電場的軸向和幅向分量，得出了軸向電場在高頻離子源擊穿中起主要作用的結論，並進而推導出了高頻離子源的擊穿判據，得出了氣體擊穿時離子源擊穿電壓和放電管內氣壓的關系。
  15. Lamp controlgear - particular requirements for electronic invertors and convertors for high - frequency operation of cold tubular discharge lamps neon tubes

    燈具控制開關.冷管放電高頻燈具電子變流器和逆變器專門要求
  16. Lamp controlgear - part 2 - 10 : particular requirements for electronic invertors and convertors for high - frequency operation of cold start tubular discharge lamps neon tubes

    燈具控制裝置.第2 - 10部分:冷啟動管狀放電燈高頻操作用電子反向變流器和電子變流器的特殊要求
  17. As for the tv transmitter of uhf of which the power grade is above 10kw, the valve power amplifier such as the electron tube, klystron and iot are widely adopted in high - frequency linear power amplifier

    功率等級在10kw以上的uhf （特高頻）電視發射機，其高頻線性功率放大器普遍採用電子管、速調管、感應輸出管（ iot ）等電真空管放大器件。
  18. To compare with transistor ( complete solid - state ) high - frequency linear power amplifier, there are some disadvantages : bad stability and reliability, low efficiency, high cost for operating, huge cabinet, heavy maintenance work load, low security for high - voltage electricity offering, and to ensure the continuance of tv program, the transmitter must be operating with main frame and spare frame

    它們與晶體管（全固態）高頻線性功率放大器相比，存在著穩定性及可靠性差、效率低、運行費用高、發射機體積大、日常維護工作量大、高壓供電不安全、必須採用主機和備機的運行方式來確保電視節目不停播等缺點。
  19. Specification for harmonized system of quality assessment for electronic components - semiconductor discrete devices - blank detail specification - ambient - rated bipolar transistors for low and high - frequency amplification

    電子元器件質量評估的協調體系.半導體分立器件.空白詳細規范.低頻和高頻放大用環境溫度額定雙極晶體管
  20. ( 4 ) specially made a research in the key technology of uhf complete solid - state high - frequency linear power amplifier : balancing transistor high - frequency linear power amplifier and the technology of 3db power integrating ( allocating )

    （ 4 ）重點研究了uhf全固態電視發射機高頻線性功率放大器的關鍵技術：平衡式晶體管高頻線性功率放大器以及3db功率合成（分配）技術。
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