aln 中文意思是什麼
aln
解釋
薄膜被擊穿-
Electroless plating method is applied to metallize the aln sbstrate
應用化學鍍鎳的方法實現了氮化鋁的金屬化。 -
Aln is an important compound semiconductor material with wide band - gap, which has wurtzite structure too. because of their many excellent physical properties, aln thin films were applied in blue - uv emitting materials, epitaxy buffer layer, soi material and saw device with ghz band
Aln具有許多優異的物理性能，在藍光、紫外發光材料及熱釋電材料、外延過渡層、 soi材料的絕緣埋層和ghz級聲表面波器件等方面有著重要的應用。 -
Due to good chemical stability and electrical resistivity, high thermal conductivity and mechanical intensity, wide band gap and low thermal expansion coefficient, aln thin films can be applied for insulating chips for semiconductor devices with high power, thermal dissipation lagers for large and super - large scale integrated circuits, insulating layers or passivation layers for semiconductor
超薄鋁膜由於其特殊的的光學性質，在光學多層膜上有廣泛應用。氮化鋁薄膜化學穩定性高、熱傳導率高、機械強度高、電絕緣性能佳、高能隙、熱膨脹系數低，光學特性優良，可以用作大功率的紫外光學器件的散熱材料。 -
With the xrd spectrum, it shows the aln thin films have orientation growth with ( 100 ) and ( 110 )
X射線衍射結果表明氮化鋁薄膜具有（ 100 ）和（ 110 ）面擇優取向。 -
The process of organic vehicle evacuation of aln green tape and ag conductor paste have been researched in the view of ltcc technology, and optimum condition of organic vehicle evacuation temperature and cofiring atmosphere have been determined
摘要從低溫共燒的工藝角度來研究氮化鋁坯片和銀漿的排膠，從而確立排膠的溫度及燒結氣氛的控制。 -
The result shows that the best comprehensive properties of silver conductor multilayer aln ceramic substrates can been achieved by two - step organic vehicle evacuation technology and cofire the substrate using mixed atmosphere gases of nitride and micro fraction of oxide
結果表明，二次排膠法與在氮氣氣氛中加入微量氧進行燒結，獲得了綜合性能優良的銀布線多層陶瓷基板。 -
In the aspect of saw devices, for zno has high coupling factor, and aln has high saw velocity, if zno thin film was deposited on aln thin film, the multiplayer film has not only high coupling factor, but also has high saw velocity, which was suitable for saw of high frequency
在聲表面波器件應用方面，由於zno具有很大的機電耦合系數，而aln的聲表面波傳播速度較高，因此若zno和aln相結合，則不僅具有大的機電耦合系數，而且具有很高的聲表面波速度，這非常適合於製造高頻聲表面波器件。 -
Three kinds of different methods, namely anode oxidation, micro - arc oxidation and dc reactive magnetron sputtering, were employed to treat aluminum substrate which is used for power electronic devices in order to get an insulating surface by form a layer of aluminum nitride ( aln ) or aluminum oxide ( al2o3 ) film
本文分別採用陽極氧化法、微弧氧化法和磁控反應濺射沉積氮化鋁薄膜的方法對功率電子器件用金屬鋁基板表面進行絕緣化處理。 -
The results indicate that it has an excellent surface. aln thin film was prepared from an aluminum target by dc and af reactive magnetron sputtering in nitrogen gas mixed with argon gas
氮化鋁薄膜樣品是利用高純鋁靶，在氮氣加氬氣氣氛下用直流和射頻反應磁控濺射法制備的。 -
Ti metallization of aln surface by molten salt reaction
陶瓷表面金屬化研究 -
Deposition and characterization of aln thin films on silicon
薄膜制備技術與測試分析 -
In this paper, zno and aln thin films were prepared by magnetron sputtering method, the films were figured by xrd, sem, xps, afm and ftir, uv photometer
本文採用磁控濺射方法制備出高質量的zno和aln薄膜，用xrd 、 sem 、 xps 、 afm和紅外、紫外分光光度計等測試手段對沉積的薄膜進行了表徵。 -
Study on transmittance of zno based on transparent thin - film transistor with complex insulative buffer layer of al2o3 aln
附銀二氧化鈦光催化劑的制備及其光催化活性研究 -
Aluminum ( al ) and aluminum nitride ( aln ) thin films have many advantages
鋁及鋁的化合物具有許多優良的性質。 -
The xps results were found that the aln thin films grow in higher substrate temperature has a higher purity of aln
Xps分析表明，薄膜中氮化鋁的純度隨著基片溫度的升高而增加。 -
Distance between target and substrate get longer also increase the transmission of aln films. as the temperature of substrate get higher, the transmission of ultrathin aluminum films decrease slightly. nitrogen gas concentration and sputtering time barely take effect on the transmission of aln films
發現，隨著工作壓強的升高、靶距的增加，薄膜的透光率上升;基片溫度的升高在非晶襯底上會導致樣品透光率的下降;而氮氣濃度和濺射時間對薄膜的透光率影響不大。
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