anodic etching 中文意思是什麼

anodic etching 解釋
陽極浸蝕法
  • etching : n. 1. 蝕刻法;蝕刻(銅)版畫;蝕鏤術。2. 蝕刻畫,蝕刻版,蝕刻版印刷品。
  1. Study on different metal activation standard of iron plating without anodic etching and its mechanism

    基體鍍鐵工藝最佳活化規范的研究
  2. ( 3 ) the free - standing porous silicon films with continuous porous structure were prepared on single crystal silicon wafer by the method of anodic oxidation and electrochemical etching - electropolishing, and firstly used as the anode materials for lithium ion secondary batteries. the capacities of lithium ions storage and the process of charge and discharge of this nano - silicon anode materials as well as the influence of the structure of ps on behavior of storing lithium ions were inspected at length. on the other hand, through the process of charge and discharge in cells, the lithium of light metal element could be electrochemically doped into ps at different doping levels

    胡勁松河北師死大學碩士學位論文( 3 )利用陽極氧化法在單晶硅基底上制備了多孔硅自支撐膜,並首次將這種具有連續多孔結構的硅材料用作了理離子電池的陽極材料,考察了這種納米級硅陽極的儲鉀性能和充放電過程,分析了材料結構對其儲理行為的影響;另一方面,利用這種電池充放電過程在多孔硅中電化學引入了不同點綴程度的輕金屬鉀元素,考察了鉀點綴對多孔硅自身結構,及至性質所帶來的影響,提供了一種通過電化學方法插入埋離子從而連續調整多孔硅發光性質的有效方法。
  3. Study on anodic oxidation etching of pan - based carbon fiber

    基炭纖維陽極電解表面刻蝕工藝研究
  4. Based on silicon - piezoresistive method, the paper first gives the theory of array silicon piezoresistive pressure, acceleration sensor, and the design of its incorporated chip, microstructure and out - circuit. several key techniques of making array silicon piezoresistive pressure, acceleration sensor such as 1c technic, mems ( silicon - silicon direct bonding, anodic bonding, anisotropic etching ) is also studied. minuteness engine machining, anode bonding etc. in the paper there are three ways which are examine - form, curve simulanting, to carry out sensors non - linear self - emendating ; adopt the several curves approaching and curve simulating to achieve the aims of sensor error self compensation, fusion technology etc. therefore, it providing referenced values of ways and directions for sensor system directing on

    論文首先以硅壓阻效應原理為基礎,討論了陣列式硅壓力、加速度傳感器的設計原理,並對陣列式硅壓力、加速度傳感器中集成敏感晶元(壓力、加速度) 、總體結構和壓力陣列的信號處理電路進行了設計,在陣列式硅壓力、加速度傳感器的研製中,還研究了半導體平面工藝、大規模集成電路技術、微機械加工技術(硅硅鍵合、靜電封接、各向異性腐蝕)等關鍵技術的應用。
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