breakdown junction 中文意思是什麼
breakdown junction
解釋
擊穿結-
Interface charge has a profound influence on the breakdown voltage of flr structure. on severe condition it can make the outer flr far from main junction disfunction
界面電荷對場限環終端結構的擊穿電壓影響很大，嚴重的甚至可以使遠離主結的場限環失去作用。 -
In the design of the device, a kind of junction termination technology, polysilicon field plate was introduced at the edge of source and drain of the device. it reduced the electric field of pn junction and nn + at the surface to avoid breakdown at the two points
在器件設計過程中，在源端和漏端都採用了多晶場板技術，減小了表面pn結和nn +處的峰值電場，避免了器件在這兩處過早擊穿。 -
And the results of calculation and numerical simulation indicate, without increasing the intrinsic collector - junction area of power devices, collector - combed structure helps to raise the intrinsic heat - dissipating area and base ' s perimeter, improve heat - dissipating method of each cell of the chip, enhance the distribution uniformity of junction temperature and current of each cell of the chip, reduce the thermal resistance and raise the dissipation power pd and output power p0, fairly well relax the contradiction among frequency, out - put power and dissipation power of the devices, and further improve the devices " property against second breakdown
而計算分析和二維數值模擬分析結果表明：梳狀集電結（基區）結構在不增加器件本徵集電結面積的條件下，增大了器件的本徵散熱面積和基區周長，改進了每個子器件單元內的散熱方式，提高了單元內結溫和電流分佈的均勻性，降低了器件的熱阻，增大了器件的耗散功率和輸出功率，較好地緩解了目前傳統結構中頻率與功率、功耗的矛盾，並有利於改善器件抗二次擊穿的性能。 -
It also put forward that how to select appropriate epilayer doping concentration and thickness, pn junction depth and jte technology to increase the breakdown voltage of 4h - sic mps. a power dissipation model of 4h - sic mps was established
通過對4h - sicmps擊穿特性的二維模擬，提出如何選擇合適的pn結深度、外延層摻雜濃度和厚度以及如何運用jte終端技術來提高擊穿電壓。 -
Theoretical analysis indicates, the two technology helps reduce the concentration of current, lower the peak junction - temperature, and effectively avoid the appearance of devices " breakdown caused by heat and current
理論分析表明：上述兩種技術，有利於減小電流集中現象，降低器件峰值結溫，避免熱擊穿和二次擊穿的發生。 -
Simulation result shows that nearly 100 % breakdown voltage of the plane junction can be realized
模擬結果顯示，該結構可以使射頻功率雙極性晶體管的擊穿電壓幾乎100 %達到平行平面結的理想值。 -
The simulation results indicate, deep - trench junction termination with certain width, depth and filling with isolated dielectric can increase the avalanche breakdown voltage of devices to above 95 % of the ideal value
結果表明：具有一定寬度、深度且填充絕緣介質的深阱結終端結構，阻止了結的橫向擴展，並能將器件的雪崩擊穿電壓提高到理想值的95以上。 -
Abstract : a vertical sandwich deep trench with a field limiting ring is proposed to improve the breakdown voltage of power devices and high voltage devices. simulation result shows that nearly 100 breakdown voltage of the plane junction can be realized
文摘:提出一種二氧化硅/多晶硅/二氧化硅夾心深槽場限制環新結構來提高晶體管的擊穿電壓.模擬結果顯示，該結構可以使射頻功率雙極性晶體管的擊穿電壓幾乎100達到平行平面結的理想值 -
As to the video signal, alarm signal, control signal, are all weak electricity signal, exceedingly easily be subjected to the jam, in case the power supply system does not steady, wave propag ation is greatly, the harmonic content of power source overtops, the veins wave factors are great unduly, and even power source equipment breakdown, outputting abnormal, will be about to affect the video signal image effect, and dependability cuts downs to the security and alarming system. we adopt fast fu lye ' s mutation rule - fft alternatives, by the way of carrying fft alternatives to the local junction circuit, regulated power supply, ups ' s power source, and switch power source, thereby diagnose every degree harmonious wave content of power souse, and abnormal coefficient, compared to the normal working situation. thereby diagnose out the working condition of the regulated power supply, ups ' s power source, and switch power source
如果有供電系統不穩定、波動大，電源的諧波含量過高，紋波系數過大，乃至電源設備損壞、輸出異常等情況出現，將會嚴重影響視頻信號的圖像效果，大大降低防盜系統的穩定性和可靠性，我們採用快速傅利葉變換原理，即fft變換，通過對市電、穩壓電源、 ups電源、開關電源等的電壓信號進行fft變換，從而得出信號中各次諧波的含量及信號畸變系數，並將其與正常工況下的參數進行對比，從而進一步診斷出穩壓電源、 ups電源、開關電源等設備的運行狀況；組成監控系統的設備長期處于工作狀態，往往由於設備散熱條件不好、設備老化故障等原因導致設備表面溫度過高，從而影響設備的正常運行，降低設備的使用壽命。
分享友人