breakdown stress 中文意思是什麼
breakdown stress
解釋
破壞應力-
At the beginning, researchers lay particular stress on the study of business strategy, but now, along with the enlargement of the size, increase of administrative levels, and the acute changes of the external environment, the enterprises more and more concern the formulation of the development strategy, because if without scenarios, the enterprises only rely business success on intuition strategy, the cost caused by missteps will be greater and greater, and even can bring terrible economic breakdown. in order to avoid these crisis and to build their permanent core competencies in a queasy environment, the enterprises are urged to think much of the study of the development strategy
以往，戰略管理研究多偏重於經營戰略研究，而近年來，由於企業規模日益擴大，公司管理層次增加，外部環境的急劇變化，企業越來越多地關心企業發展戰略的制訂了，因為如果沒有發展戰略，企業僅依靠直覺戰略獲得成功的話，由於過失帶來的風險、錯誤帶來的代價會越來越大，甚至造成經濟崩潰，促使企業領導更加重視發展戰略研究，以使他們的企業在愈加變幻多端的經營環境中保持競爭力。 -
The fatigue alternating stress, which are highly variable in time, subject the crankshaft to very high and complex loading that induced to fatigue breakdown. the crankshaft design and manufacture must therefore precise calculations of the fatigue characteristics
柴油機球鐵曲軸在工藝性和成本上佔有一定的優勢，通過滾壓強化工藝，疲勞強度有很大程度的提高，因而在國外得到廣泛應用。 -
Test method for dielectric breakdown voltage and dielectric strength of electrical insulating materials under direct - voltage stress
直流電壓應力下電氣絕緣材料的介電擊穿電壓和介電強度的試驗方法 -
Results of study show that inception voltage of electrical tree, breakdown voltage, environmental stress cracking, tensile strength and elongation at break of low density polyethylene are improved after grafting
研究結果表明：接枝聚硅氧烷后，改性的低密度聚乙烯的樹枝引發示性電壓、擊穿場強、耐環境應力開裂性、拉伸強度及斷裂伸長率都得到提高。 -
Hot - carrier induced oxide breakdown shows different characteristics compared with that induced by conventional fn stress
與通常的fn應力實驗相比較，熱載流子導致的超薄柵氧化層擊穿顯示了不同的擊穿特性。 -
Standard test method for dielectric breakdown voltage and dielectric strength of solid electrical insulating materials under direct - voltage stress
在直流電壓作用下固體電絕緣材料的介電擊穿電壓及介電強度的標準試驗方法 -
The author ' s main contributions are outlined as following : first, the roles of hot electron and hole in dielectric breakdown of ultra - thin gate oxides have been quantitatively investigated by separately controlling the amounts of hot electron and hot hole injection using substrate hot hole ( shh ) injection method. the changes of threshold voltage have been discussed under different stress conditions
主要研究結果如下：首先，利用襯底熱空穴（ shh ）注入技術分別控制注入到超薄柵氧化層中的熱電子和空穴的數量，定量研究了熱電子和空穴注入對超薄柵氧化層擊穿的影響，討論了不同應力條件下的閾值電壓變化。 -
Breakdown stress is significantly enhanced when a hydrostatic pressure is applied to the water dielectrics. when the pressure of water changed from o. lmpa to 0. 7mpa, breakdown stress of water changed from 38mv / m to 70mv / m
在壓力的作用下，水介質的脈沖擊穿場強得到了較大的提高，當壓力變化由0 . 1mpa到0 . 7mpa時，水的擊穿場強由38mv m增加到70mv m 。 -
Growth hormone also plays a role in fighting tissue breakdown, staving off stress fractures and improving metabolic function
生長激素在對抗阻止分解、應力斷裂和提高新陳代謝功能中也發揮作用。 -
Abstract : the saturation behavior of stress current is studied. the three types of precursor sites for trap generation are also introduced by fitting method based on first order rate equation. a further investigation by statistics experiments shows that there are definite relationships among time constant of trap generation, the time - to - breakdown, and stress voltage. it also means that the time constant of trap generation can be used to predict oxide lifetime. this method is faster for tddb study compared with usual breakdown experiments
文摘:基於一階速率方程，討論了恆定電壓應力下應力電流的飽和行為.通過對應力電流的擬合，發現存在三類缺陷產生的前身.更進一步的統計實驗顯示，在缺陷產生時間常數、擊穿時間以及應力電壓之間存在著明確的關系.這意味著缺陷產生時間常數能夠被用於有效預測氧化層的壽命.與常規的氧化層擊穿實驗相比，基於缺陷產生時間常數的預測更快、更有效 -
The polymer is widely used in fields of electric and electronic insulation, but local fields ( electric fields, mechanical stress ) distortion induced by space charges in polymers will greatly affect properties of polarization, conductance, short - term breakdown and long - term breakdown
聚合物在電氣、電子絕緣中應用極為廣泛，但其中的空間電荷誘導的局部場（電場、力場）畸變，將對極化、電導、短時及長時擊穿特性帶來巨大影響。 -
The results show that charge to breakdown qbd depends not only on the gate oxide quality but also on the voltage stress, current density and the gate oxide area
結果表明：相關擊穿電荷q _ （ bd ）除了與氧化層質量有關外，還與電壓應力和電流密度以及柵氧化層面積有關。
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