buffer stage 中文意思是什麼

buffer stage 解釋
緩沖放大器
  • buffer : n 1 【機械工程】緩沖器,緩沖墊;阻尼器,減震器;消聲器。2 【化學】緩沖,緩沖劑。3 緩沖者;緩沖物...
  • stage : n 1 講臺;舞臺;戲院,劇場;〈the stage〉戲劇,戲劇藝術;戲劇文學;〈the stage〉戲劇業;劇壇。2 ...
  1. The field of international conflict and crises studies ( iccs ) is based on the assumption that there is a buffer zone between war and peace, the stage of conflict and crisis, with strategic management to prevent conflict and crisis stage from entering into a stage of war

    摘要國際沖突與危機研究假定戰爭與和平之間存在著緩沖區,也就是沖突與危機的階段,可以藉由策略性的管理而防止沖突與危機變成戰爭。
  2. The major activities involved during the construction stage of the project are cut and fill earthworks, slope works, earth retaining walls, irrigation buffer lake, detention ponds and tanks, sand bunkers and golf course capping and turfing

    2 . 3 . 1在工程項目的施工期內,主要的工程活動包括挖填土方工程斜坡工程護土墻灌溉緩沖湖靜水塘缸沙坑及高爾夫球場的加蓋草皮鋪設。
  3. By the essential control of the initial stage of - material growth, the high - quality crystal films can be obtained. by using mocvd technology, studies of some kinds of methods such as hydrogen - terminated, nitridation, plasma - assisted, growth of two stages and sputtering buffer layers have been conducted. by measuring of xrd, pl, sem and tem, and analysis of spectra of xrd, raman scatting, oa, and pl at different temperatures, we observed that the crystal quality has been improved markedly

    本文利用mocvd技術,採用各種對si襯底處理的方法,如氫終止法、氮化法、等離子體轟擊方法、兩步生長法、濺射緩沖層法等進行了試驗與研究,通過x射線衍射技術( xrd ) 、光致發光技術( pl ) 、掃描電子顯微術( sem ) 、透射電子顯微術( tem )等檢測,並對其x射線衍射光譜、拉譜光譜、吸收光譜及不同溫度下的光致發光光譜分析,發現外延晶體的生長質量得到了明顯提高。
  4. The hats stage 1 initiative quickly brought significant and sustained improvements to the water quality of the central waters, especially that of the eastern victoria harbour, eastern buffer and junk bay wczs

    自凈化海港計劃第一期工程開始運作以來,海港水質有顯著而持續的改善,其中以維港東部東部緩沖區及將軍澳水質管制區的情況尤其令人鼓舞。
  5. The high density dislocations behave like deep - level donors and the dislocations scattering is considerable at low temperature especially. besides, when the insb buffer layer thickness became 80nm, the roughness of insb epilayer increased. the initial stage of insb growth on gaas substrate is

    透射電子顯微鏡發現,在insb / gaas薄膜的界面處分佈有間距為3 . 5nm的失配位錯陣列,界面處的高密度位錯可體現出類似深能級施主的特性,尤其在低溫下對載流子散射更加顯著。
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