bulk silicon 中文意思是什麼

bulk silicon 解釋
矽製程
  • bulk : n 1 體積，容積，大小。2 巨大；龐然大物；大塊；大批，大量。3 貨艙；船貨；散裝貨物。4 〈the bulk〉...
  • silicon : n. ＝ silicium
  1. Standard test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay

    硅和鍺體內少數載流子壽命測定光電導衰減法
  2. The silicon force sensor using bulk silicon process has lots of advantages such as batch producible, low cost, high precision, small driving force, high reliability, low power consuming, small dimension, light weight and quick response, etc. therefore, a scheme is proposed in this paper

    由於微機械工藝採用的技術多是半導體工業的硅表面工藝和體硅加工工藝，因此這種傳感器可以大批量製造，且具有低成本、高精度、低驅動、高可靠性、低功耗、佔用空間小、重量輕和響應速度快等優點。
  3. In the dissertation, the effects of the air slide - film damping on the capacitive accelerometers having different slot structures which are completely or partly etched, and fabricated by the anodic bonding between silicon and glass and bulk silicon micromachining process are researched by changing the distance between the moving structure and substrate, the thickness of the structure, the width of the completely etched slot structure, the depth of the partly etched slot structure according to the two well known air slide - film damping models

    對于橫向運動的體微機械器件，其周圍空氣表現為滑膜阻尼。本文基於滑膜阻尼的兩個模型，通過改變振子與襯底的間距、振子的厚度、刻透的柵槽的寬度、沒有刻透的柵槽的深度等參數，研究了這些參數對硅?玻璃鍵合工藝製作的體硅微機械電容式傳感器阻尼特性的影響。
  4. Strained - soi mosfet, which appears recently, takes both the advantages of soi ( silicon on insulator ) and sige ( silicon germanium ). it has shown advantages over bulk sample in enhanced carriers mobility, as well as higher transconductance, stronger drive capability and reduced parasitic capacitances. these properties make it a promising candidate for improving the performance of microelectronics devices

    Strained - soimosfet是最近幾年才出現的新型器件，它將soi材料和sige材料結合在一起，與傳統體硅器件相比，表現出載流子遷移率高、電流驅動能力強、跨導大、寄生效應小等優勢，特別適用於高性能、高速度、低功耗超大規模集成電路。
  5. Fabrication process of the microgripper based on silicon bulk micromachining is designed. effects of footing and lag in icp and bonding failure are discussed as emphases. the cantilever type gripping finger that is 6 m wide and 5471 m in equivalent length was released successfully characteristic of comb - drive electrostatically actuated microgripper is tested

    進行了大量的工藝試驗和分析，特別對大深寬比的超長長度懸臂梁型夾持臂及梳狀驅動結構進行了深入研究，解決了微細加工工藝中的關鍵技術。
  6. Sinx thin film can improve the minor carrier lifetime of both mono and poly silicon by the simultaneous surface and bulk passivation

    9 ）的提高；先沉積氮化硅薄膜再氫等離子體處理能得到更好的鈍化效果。
  7. A modified ig process was suggested, through which a wider denuded - zone ( dz ) on the surface of wafers and higher density of oxygen precipitation in silicon bulk were obtained

    使用改進的內吸除工藝，在重摻砷矽片表面形成了較寬的清潔區，體內形成了較高密度的氧沉澱和誘生缺陷。
  8. Bulk silicon, with indirect band gap of 1. 12 ev, does n ' t emit visible light at room temperature

    本體硅為間接禁帶半導體，且禁帶寬度比較窄（ 1 . 12ev ） ，在室溫下很難發可見光。
  9. The mechanism of the luminescence has been discussed. bulk silicon, with indirect band gap of 1. 12ev does n ' t emit light at room temperature

    本體硅為間接禁帶半導體，且禁帶寬度較窄，室溫下很難發光。
  10. With a broaden and likely direct band gap, porous silicon has a different band structure to that of the bulk silicon. thus the porous silicon can emit at room temperature

    多孔硅改變了體硅的能帶結構，使禁帶展寬，並由間接帶隙向直接帶隙轉變，實現了室溫發光。
  11. In the new structure, a n + buffer layer is introduced into the bulk silicon substrate with a triple - diffusion process. the new structure has two features : one is the feature of npt - igbt : the thin and lightly - doped p + layer and the high lifetimes of the carriers ; the other is the feature of pt - igbt : n7n + structure which can make the n " region very thin

    新結構用三重擴散的方法在n ~ -單晶片上引入了n ~ +緩沖層，仍然保留了npt - igbt中薄而輕摻雜p層和高載流子壽命的本質優點，同時又具有pt - igbt中n ~ - （ n ~ + ）雙層復合的薄耐壓層（即薄基區）的優點。
  12. The corrosion rate of porous silicon in hf / h2o2 solution is several orders higher than that of bulk silicon

    多孔硅在hf / h _ 2o _ 2溶液中的腐蝕速率比體硅的高幾個數量級。
  13. In this paper, the soi technology is applied to the integrated circuit fabrication. soi technology overcomes some disadvantages of bulk silicon because of its inherent structure. it has the advantages such as no latch - up effect, low parasitic capacitance, high transconductance, simple structure, high density and good anti - radiation

    Soi技術以其獨特的材料結構有效地克服了體硅材料的不足，它具有無閉鎖效應；漏源寄生電容小；較高的跨導和電流驅動能力；器件結構簡單；器件之間距離小；集成度高；抗輻射性能優良等優點。
  14. The different kinds of pyroelectric sensors were prepared on the porous silicon dioxide, plastic film and bulk silicon substrates respectively. the nanocomposite pclttp ( vdf - trfe ) film was deposited by spin - coating used as the sensing film, and ni - cr film was chosen as upper electrode and absorb layer

    分別在多孔氧化硅、 pet塑料和硅襯底上，制備納米陶瓷/ p （ vdf - trfe ）復合敏感膜的熱釋電單元傳感器。
  15. The distance measure instruments made by traditional bulk silicon cmos process is not able to work in the hard environment because of the restriction of the bulk silicon material structure. the environment of the space radiation and high temperature will degrade the measure precise and the work speed of the instruments

    傳統的體硅cmos工藝製造的測距儀由於體硅材料和器件結構的限制，無法工作在惡劣的環境下，空間的輻射、溫度的升高等都會導致器件和電路的性能急劇惡化，測量精度和工作速度下降，不能滿足宇航事業的要求。
  16. Bulk silicon has an indirect energy bandage and is therefore highly inefficient as a light source. it is hard to get the goal of luminescence devices. nanocrystalline silion ( nc - si ) have many difference from bulk silicon, such as structure, the capability of optics and photoelectricity

    單晶硅是間接帶隙材料，其帶間輻射復合效率非常低，難以達到發光器件的要求，與之相比，納米硅晶在結構、光學及光電性能方面與單晶硅不同，它在發光器件、光探測器件、光電集成以及傳感器等領域有更廣闊的應用前景。
  17. With a broad and likely direct band gap, porous silicon has a different band structure from that of the bulk silicon. thus the porous silicon can emit visible light at room temperature

    多孔硅改變了本體硅的能帶結構，使禁帶寬度展寬，並由間接禁帶向直接禁帶轉變，實現了室溫發光。
  18. A method to make blazed silicon gratings is designed. the fabrication of ( 100 ) and ( 111 ) silicon wafer grating is performed by bulk silicon techniques. the surfaces of silicon gratings have been tested by afm

    設計了一種製作閃耀硅光柵的方法，利用體硅加工技術分別進行了（ 100 ）面矽片和（ 111 ）面矽片光柵的製作，對光柵的表面進行了測試。
  19. The micromechanical comb - capacitive accelerometers fabricated by bulk silicon micromachining process are widely used for having simple process, small temperature coefficient, good stability and easily controllable damping coefficient

    用體硅微機械工藝製作的梳齒電容式傳感器有製作工藝簡單、溫度系數小、穩定性好、阻尼系數容易控制等優點，因而應用廣泛。
  20. In the dissertation, a micromechanical comb capacitive accelerometer having u - shaped supporting beams is designed, simulated and fabricated on the base of the anodic bonding between the silicon and glass, and bulk silicon micromachining process

    而改用體硅微機械製作可以改善這些問題。本文設計、模擬並製作了一種基於硅一玻璃鍵合工藝的u型梁支撐的微機械電容式加速度計。
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