carbide layer 中文意思是什麼
carbide layer
解釋
碳化物層-
The particles distributed hi the matrix of grey cast iron, but some contact each other. the composite layer extend gradually into the substrate. when volume fraction of wc is 36 wt % and 27 wt %, the matrix of the composite is high chromium cast iron, consist of white carbide bars and the austenite. wc particles distributed uniformly, retaining approximately quondam granular form in the composite layer which has an evident interface area with the substrate, with good bonding strength
對不同碳化鎢體積分數的灰鐵和低鉻鑄鐵基復合材料的微觀組織結構分析表明：碳化鎢體積分數為52時，復合層內基體為灰口鑄鐵組織，顆粒直接分佈在灰鐵基體上，部分碳化鎢顆粒有相互接觸的現象，基材與復合層之間沒有明顯的過渡；碳化鎢體積分數為36 、 27時，復合層內基體為高鉻鑄鐵，由面塊狀的奧氏體和白條狀碳化物組成，碳化鎢顆粒表面固溶於基體組織中，粒形基本保持完整，分佈均勻，與基體構成冶金結合，基材與復合層之間存在一個明顯的平緩過渡區。 -
The results indicated that discontinuity of micro structure of work layer caused by in. homogeneous distribution of chemical composition, different pattern of carbide, mhomogeneity of hardness lead to large area of spalling and frther scrapping of roll
結果表明，化學成分的不均勻分佈，造成軋輥輥身工作層組織不連續、碳化拘形態各異使輥身工作層硬度不均勻，產生大面積剝落，最終導致軋輥報廢。 -
Microstructure of the composite layer was analyzed with help of optical microscope, scanning electronic microscope ( sem ), electronic probe microanalysis ( epma ) and x - ray diffraction ( xrd ). the compacting of the billet and the forming mechanism of the carbide reinforcement were studied based on thermodynamics and kinetics of reaction, sintering theory and the result of dta. at the same time, the wear - resistance of the composite layer was studied under condition of dry sliding friction
利用光學顯微鏡、掃描電子顯微鏡、電子探針以及x -射線衍射儀，分析了表面復合層的基體組織結構；運用反應熱力學、動力學、粉末燒結理論和燃燒合成理論，結合差熱分析結果，探討了表面復合層壓坯的燒結緻密化原理和碳化物增強相的形成機理；利用坯塊在真空燒結爐不同溫度下的燒結出來的顯微組織分析，模擬出坯塊的燒結過程中的化學反應過程。 -
In this paper, the growth technology is presented for epitaxial silicon carbide films on sapphire with a buffer layer by atmospheric - pressure chemical vapor deposition ( apcvd ) process. the effect of temperature and precursors flow rates on the growth of silicon carbide films by chemical vapor deposition is analyzed. the structural properties of the films grown on sapphire compound substrate are studied by x - ray diffraction ( xrd ), x - ray photospectroscopy ( xps ) and photoluminescence spectroscopy
本論文提出了在藍寶石上引入一層緩沖層材料形成復合襯底，採用常壓化學氣相淀積（ apcvd ）方法在其上異質外延生長sic薄膜的技術，分析了cvd法生長sic的物理化學過程，通過實驗提出sic薄膜生長的工藝條件，並通過x射線衍射（ xrd ） 、 x射線光電子能譜（ xps ） 、光致發光譜（ pl譜）和掃描電鏡（ sem ）對外延薄膜的結構性質進行分析。 -
In this thesis, the cvd technique and “ two - step growth process ” were used to deposit the 3c - sic films, that was to carbonize si substrate in carbide gas atmosphere first in order to form a buffer layer, then deposited the 3c - sic films on this buffer layer
本論文採用cvd方法，並結合「兩步生長工藝」進行3c - sic的異質外延生長。即:首先將si基片碳化，形成一個碳化緩沖層，然後再在此緩沖層上異質外延生長3c - sic薄膜。 -
When surface temperatures of uranium and uranium - niobium alloys increase higher than 573k, heating was observed to deplete surface oxygen by accelerating its transport into the bulk and separate carbon out to their surface. so there were uranium carbide formed on the surface and thicker layer of uo _ ( 2 ) formed in the bulk. with surface temperature increasing, the o / u ratio dropped sharply as the surface oxygen diffused into the bulk
當溫度高於573k時，溫度增強了鈾及其合金表面上的氧的解吸和向體內擴散，以及促使體內的碳向表面上偏析，導致在鈾及其合金表面上形成了鈾碳化合物，並在體內出現富二氧化鈾層，隨著溫度的升高，表面上的氧和鈾原子的比值降低，鈾碳化合物含量增加，體內的富二氧化鈾層加厚。
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