carrier mobility 中文意思是什麼
carrier mobility
解釋
單位載流子平均漂移速度-
The mobility value used is that of the minority carrier.
所採用的遷移率值都是少子遷移率。 -
Here the conductance, carrier concentration and hall mobility ect parameters of er doped cdte films have been given. using seto model, we calculate the grain - boundary barrier of er doped cdte films and analyze the varing dose influence on the grain - boundary resistance
討論了不同er離子注入量對硅基底上沉積的cdte薄膜結構和光電性能的影響，並具體給出了摻雜cdte多晶薄膜的電導、載流子濃度及遷移率等參數值。 -
The hetrojunction device fabricated with sige material has shown great advantages over bulk sample in many aspects : higher carrier mobility, larger transconductance, stronger drive capability and hence faster circuit speed
與體si器件相比，採用sige材料的異質結器件已經在許多方面顯示出了強大的優勢:譬如更大的載流子遷移率，更大的跨導，更強的電流驅動能力以及更快的電路速度等等。 -
It was found that, the as grown crystal of mnxcd1 - xin2te4 is p type semiconductor, both the charge density and the resistivity increase with x value, while the carrier mobility decreases with x
晶體的電學性能，發現生長態的mncd晶體均為p型半導體。隨著組分x值的增大，載流於的濃度np減小，遷移率p 。 -
There is not any man - made reference and any priori information such as land marker or light tower in unknown environment which is usually three - dimensional. it is necessary for researchers to have a sophisticated mobile platform with stability, trafficability, terrainability, reliability and mobility, as any navigation algorithm should be realized by a mobile carrier with high trafficability and high maneuverability
要在這樣或類似的環境中研究移動機器人自主導航的理論與技術，擁有一個具有穩定性、通過性、越障性、可靠性和機動性的硬體移動平臺絕對是必要的，因為任何先進的演算法和理論都需要通過高機動性和高通過能力的載體來實現。 -
We represent a temperature model of surface carrier mobility of short channel most after thinking about kinds of dispersion effect
在考慮了各種散射效應對遷移率的影響后，提出了短溝道most表面載流子遷移率的溫度模型。 -
In this paper, the subband structure in the inversion layer is constructed by solving the self - consistent schr ? dinger equation, thus the carrier effective mass and scattering rate can be obtained. furthermore, taking account for the carrier density in each subband, we establish carrier mobility model in strained - si mosfet
本文通過求解自洽薛定諤方程，確定了應變硅mosfet反型層的子能帶結構，在此基礎上經進一步計算得到子能帶內載流子的有效質量和散射幾率，綜合考慮各子能帶上的載流子的濃度分佈，建立了應變硅mosfet載流子遷移率的解析模型。 -
We measured the samples " electrical properties ( square resistance, square carrier concentration, carrier mobility and hall coefficient ) at room temperature by hall measurement. the experimental results revealed that all the samples are p - type, with increasing the annealing temperature, the carrier mobility increased and the square carrier concentration decreased. these changes in electrical properties are explained by a decrease in the number of mn acceptors because of the forming of mnas phase and the resuming of lattice defects during annealing
所有樣品均為p型導電類型；發現在650到850溫度范圍內，隨著退火溫度的升高，樣品的方塊載流子濃度呈下降趨勢，而載流子遷移率呈上升趨勢；這是由於在退火過程中，隨著退火溫度的升高，有更多的mn參與mnas相的形成，使得以替位受主形式存在的mn減少，並且晶格缺陷得到恢復所致。 -
The n type carrier was provided by interstitial zn atom, and zn / o ratio and crystalline quality of zno thin film effeted its hall mobility. when zno thin film was annealed in the ar ambience, p conduction type was founded in the zno thin film which grew in oxygen enrichment condition. this might be excess oxygen in zno thin film entered interstitial position of crystal lattice ( oi ), and p type carrier was from oi
在ar氣保護下，對富氧條件下生長的zno薄膜的退火后的霍爾測量中發現， zno薄膜呈現p型導電狀態，分析認為，這可能是由於富氧狀態下生長的zno薄膜中過量的o在ar氣保護下退火沒有逸出薄膜，反而進入了zno薄膜的間隙位置，成為正電中心，使zno薄膜呈現p型導電。 -
However, the refractive index will increase with the increase of the flow ratio of sifu / nhs, slightly increase with the increase of substrate temperate, and decrease with the increase of rf power. by measuring the passivation results of hydrogen plasma and sinx thin film, we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment, although it has little to do with the annealing temperature and time. the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon, but after annealing at high temperature the mobility turns down
通過測試氫等離子體鈍化和氮化硅薄膜鈍化的效果，實驗還發現氫等離子體處理對多晶硅材料的少子壽命提高作用比較明顯，但是這種提高作用與處理溫度以浙江大學碩士學位論文王曉泉2003年5月及時間的關系不大；氨化硅薄膜中的氫對單晶硅的載流子遷移率提高有一定作用，但經過高溫處理后這種作用消失；氮化硅薄膜能提高單晶硅和多晶硅的少子壽命，具有表面鈍化和體鈍化的雙重作用；氫等離子體和氮化硅薄膜都能有效地提高單晶和多晶電池的短路電流密度，進而使電池效率有不同程度（絕對轉換效率0 -
The experiments show : growth temperature is one of the key growth parameter by which the surface morphology, alloy composition, crystalline quality, mobility and carrier concentration are influenced
實驗表明：生長溫度是一個重要的生長參數，它對外延層的表面形貌、組分、結晶質量、遷移率、載流子濃度有著很大影響。 -
After measuring dark current, photocurrent and response to x pulse of gaas detector before and after 1. 7 mev electronic radiation, the response tune, fall time of trailing edge, full width of half maximum ( fwhm ), sensitivity, carrier life, mobility are researched and contrasted. the result shows that the response speed of detector, time resolution ratio and nonlinear of back edge of output signal have been improved greatly after electronic radiation. though sensitivity of the detector reduces, its measuring range can be widened
為了使探測器的性能得到進一步的提高，我們對其進行了電子輻照改性，並測量了本徵砷化鎵探測器和經過1 . 7mev電子輻照的探測器的暗電流、光電流及對x射線的脈沖響應，並對其響應時間，后沿下降時間，半高寬（ fwhm ） ，載流子壽命，靈敏度進行對比，研究，結果顯示經電子輻照后的探測器的性能得到了改善，使響應速度，分辯率進一步提高，並消除了探測器輸出信號后沿的非線性，雖靈敏度有所降低，反而使其測量范圍得以拓寬。 -
As a type of potentially good thermoelectric materials, cosb3 compounds with the skutterudite crystal structure mx3 have attracted attention widely, because of their high carrier mobility, large electrical conductivities, and large seebeck coefficients. however, the thermal conductivity of skutterudite is too large, so, zt is low. therefore reducing the thermal conductivity of cosb3 has becomed a main research way at present
Cosb _ 3方鈷礦化合物作為一種具有潛在高熱電性能指數的新型中溫熱電材料具有大的載流子移動度、高的電導率和較大的seebeck系數，但由於熱導率較大，因此要提高cosb _ 3方鈷礦化合物的熱電性能，降低其熱導率是當前研究的熱點之一。 -
The intrinsic carrier concentration reduces when decreasing the v / iii ratio. the high quality of in0. 53gao. 47as can be obtained at the range of 10 - 30 seconds of exchange time between ashs and phs. when the thickness of the buffer layer between the inp substrate and ingaas epilayer is 0. 2 um the mobility becomes the maximum and the carrier concentration is the lowest
/比對外延層的表面形貌有較大影響，增大/比有利於提高材料的結晶質量；隨著/比增加，遷移率升高；本徵載流子濃度隨著/比減少而降低； ash _ 3和ph _ 3轉換時間在10秒到30秒之間可以獲得質量較好的ingaas外延層；在inp緩沖層厚度為0 . 2 m時遷移率達到最大，載流子濃度達到最低。 -
Secondly, we measured the electrical properties of the ion - implanted samples by hall method ( square carrier concentration, square resistance and carrier mobility ). after comparing and analyzing, we can know that the electrical properties were affected by the difference of mn dose, the implantation of c and the annealing temperature
其次，利用霍爾測試方法測量了每種離子注入樣品的電性質（方塊載流子濃度、方塊電阻及載流子遷移率） ，通過比較分析了解到mn元素注入劑量、 c元素的注入以及退火溫度的不同，都會對樣品的電性質產生影響。 -
Experimental results revealed that the carrier mobility increased with increasing of the annealing temperature, in the range of the annealing temperature from 650 ? to 850 ?, which implied that the crystal lattice structure was damaged by ion implantation and restored after annealing. furthermore, the square carrier concentration decreased, and the square resistance of the samples implanted by mn + and c increased with the raising of annealing temperature. these results indicated that the second phase such as mnga, mnas ferromagnets was formed by more mn + ions with increasing of the ( gaas ) annealing temperature, so the mn + ions which can provide carriers decreased
由實驗結果可以知道在退火溫度為650 850范圍內，樣品的載流子遷移率隨著退火溫度的提高呈上升趨勢，說明雜質元素的注入對樣品造成晶格損傷，但退火對這些損傷具有修復作用；此外，隨著退火溫度的上升，樣品的方塊載流子濃度不斷下降，加c樣品的方塊電阻不斷上升，這都是因為隨著退火溫度的提高，摻入的mn ~ +離子不再提供載流子，而是形成了mnga 、 mnas等磁性第二相。 -
The recent development of organic electron transport materials are reviewed as well. several technologies for charge carrier mobility measurement are summarized and compared, and a series of basic principles for designing high - performance organic electron transport materials are suggested as well
本章還重點綜述了有機電子傳輸材料研究的最新進展，總結和比較了有機材料載流子遷移率的測試方法，並提出了設計高性能有機電子傳輸材料的若干原則。 -
Since the carrier mobility in organic materials is very low, no collision excitation is possible. the short wavelength peak is due to direct bombardment by electrons from sic > 2. we name this luminescence as cathodoluminescence - like ( cl - like ) emission or solid state cathode luminescence because the energized electrons are accelerated in solid instead of in vacuum
這樣在有機層中的電子數是nl n計n汁n ，空穴數是p n （ n是類陰極射線激發出的電子，也是類陰極射線激發出的空穴兒這兩類載流子的復合將比單純有機發光的復合nip增加了（ n計n葉n ）叮（ l n計n葉n ） n 。 -
The carrier mobility of the s doped n - type diamond had the same order as the s doped 1 b diamond and the changes of the character of diamond along with the changes of intensity of s doped in diamond were investigated
其中，採用cvd技術制備的以硫為施主的n型金剛石薄膜的遷移率與b單晶金剛石硫摻雜的遷移率達到了相同的量級。 -
It is pointed that inversion - layer mobility is different from field - effect mobility for sic mosfet. and a relationship has been established between the ratio of the experimentally - determined field - effect mobility to the actual inversion - layer carrier mobility and interface states
明確指出碳化硅器件的反型層遷移率和實驗測定的場效應遷移率不能等同，並給出了以上二者的比值與界面態密度的定量關系。
分享友人