chemical vapor deposition film 中文意思是什麼

chemical vapor deposition film 解釋
化學汽相淀積膜
  • chemical : adj 化學的，化學作用的；應用化學的，用化學方法獲得的。n 〈常 pl 〉化學製品；藥品。 fine chemicals...
  • vapor : n. 〈美國〉＝ vapour.
  • deposition : n. 1. 免職，罷免；廢位。2. 淤積[沉積]（物，作用）。3. 耶穌從十字架上放下（的畫、雕刻）。4. 寄存，委託；委託物。5. 【法律】口供，證言；口供書。
  • film : n 1 薄層，薄膜；薄霧，輕煙；細絲狀的東西。2 【攝影】感光乳劑，照相軟片，電影膠片；影片。3 〈 pl ...
  1. Sub - thesis is mainly on the test and research of the photoelectric properties of a - si : h thin film deposited by microwave electron cyclotron resonance chemical vapor deposition ( mw - ecr cvd ) system

    本論文主要是對mw - ecrcvd系統沉積的a - si : h薄膜進行了一系列的光電特性的測試研究工作。
  2. We suggest that regular tactic square shape with steps on the single crystal mgo and discontinuity of the au film may play an important role during the formation of regular arrays of gan nanorods. a new form of gan nanomaterial - nanotweezers has been obtained by chemical vapor deposition on the specially prepared cubic mgo ( 100 ) s

    Fe s 3 ： m ， edx ， xa12 ， tem和saed顯示：納米線是具有單斜晶系的屍gazo3單晶體，並且單根g七azo3納米線根植于ag催化劑島，形成了橋連于金屬催化劑島的納米線陣列。
  3. In this paper, the gas phase dissociation process during the diamond film growth from electron - assisted chemical vapor deposition ( eacvd ) by considering ch4 / h2 mixture gas as source gas had been studied by using monte - carlo computer simulation method. the eacvd gas phase dynamics model was built firstly and the low temperature deposition process was also discussed

    本工作採用蒙特卡羅（ monte - carlo ）計算機模擬的方法，對以ch _ 4 h _ 2為源氣體的電子助進化學氣相沉積（ eacvd ）金剛石薄膜中的氣相分解過程進行了研究，初步建立了eacvd氣相動力學模型，並討論了eacvd中的低溫沉積過程。
  4. Oriented growth of diamond film on si via plasma enhanced hot filament chemical vapor deposition

    等離子體增強熱絲化學氣相沉積法生長取向金剛石薄膜
  5. The diamond film is grown using a hot filament chemical vapor deposition, basing on the diamond micro - grits on silicon substrates

    實驗中外延金剛石薄膜採用熱絲cvd法生長，生長於事先電泳沉積在硅襯底的金剛石微粒上。
  6. A ) si thin film with sub - micro thickness was epitaxial grown on heavy - doped si substrate by ultra high vacuum chemical vapor deposition ( uhv - cvd )

    A ）利用超高真空化學氣相沉積（ uhv - cvd ）技術在重摻si襯底上生長高晶體質量的亞微米級薄硅外延片。
  7. In situ diagnosis of plasma environment for synthesizing diamond film was conducted by langmuir single probe and optical emission spectroscopy. the mechanism of diamond growth was investigated and the n - type diamond was deposited by glow plasma assisted chemical vapor deposition ( cvd )

    本文通過langmuir單探針和光發射譜對合成金剛石薄膜的等離子體環境進行了原位診斷；初步探討了金剛石薄膜生長的動力學過程；並採用輝光等離子體輔助化學氣相沉積（ cvd ）技術制備得到了n型金剛石薄膜。
  8. Silicon nitride ( normally si3n4 ) has been widely used in such fields as micro - electronics and optoelectronics as a promising film material because of its excellent property. many researches have been made on silicon nitride, especially on preparation for it with all kinds of cvd ( chemical vapor deposition ). but the growth mechanism and kinetics of direct - nitridation in nitrogen are not investigated in detail, especially few work has been done on direct - nitridation of silicon wafer in nitrogen during heat treatment

    氮化硅（ si _ 3n _ 4 ）具有許多特殊的優越性能，是一種前景廣闊的薄膜材料，並已廣泛應用於微電子、光電子領域，人們對此做了大量的研究，但主要集中在用各種化學氣相沉積的薄膜制備上，對直接氮化法的機理和動力學研究較少，特別是矽片在氮氣保護的熱處理條件下的直接氮化行為研究更少，甚至對矽片在熱處理條件下能否與惰性的氮氣發生反應等問題依然存在爭論。
  9. In this paper, plasma - enhanced chemical vapor deposition ( pecvd ) technique was used to deposit the dielectric p - sio2 films and p - sion films on the silicon wafer under the conditions of low temperature and low pressure with teos organic sourse. this research was focused on the evaluation of film growth, hardness, stress, resistance and refractive index, by changing the experimental parameters including rf power, substrate temperature, chamber pressure, and the flow rates of teos, o2, n2. the results showed that the p - sio2 film was smooth, dense, and structurally amorphous

    實驗結果顯示，用pecvd法淀積的p - sio _ 2膜是一表面平坦且緻密的非晶質結構的薄膜，與矽片襯底之間有良好的附著性；在中心條件時生長速率可控制在2600a / min左右；在基板溫度410時有最大的硬度可達16gpa ；其應力為壓縮應力，可達- 75mpa ；薄膜的臨界荷重為46 . 5un 。
  10. Growth orientation of poly - si film by hot - wire chemical vapor deposition

    熱絲法制備多晶硅薄膜晶體取向及形態的研究
  11. By the pecvd ( plasma enhanced chemical vapor deposition ) system and the reactants of silane and ammonia, silicon nitride thin film with excellent anti - reflective and passivation effects was prepared. the relatively optimum parameters for depositing sinx thin film and the basic physical and chemical properties of sinx were investigated. the effects of substrate temperature, the flow ratio of silane over ammonia and the rf power on the refractivity and deposition rate were researched

    實驗表明，氮化硅薄膜的沉積速率隨硅烷氨氣流量比增大而增大，隨溫度升高而略有降低，隨淀積功率增大而明顯增加；在襯底溫度300 ，射頻功率20w和硅烷氨氣流量比為1 ： 3的條件下氮化硅薄膜的沉積速率大約為8 . 6納米分。
  12. The ci ~ - c : h film was prepared by the means of plasma assistance chemical vapor deposition with hydrocarbon n - butylamine ( ch3ch2ch2ch2nh2 ) as carbon source. the material of carbon source was carried into chemical vapor deposition chamber under pure hydrogen

    採用等離子體輔助化學氣相沉積方法，以碳氫化合物正丁胺（ ch _ 3ch _ 2ch _ 2ch _ 2nh _ 2 ）作為碳源物質，用高純氫氣作為載氣，將碳源物質攜帶進入反應室。
  13. In order to prolong the lifetime of the phosphor, na2sio3 liquid phase hydrolyzation and atmospheric chemical vapor deposition of teos and o2 is adopted to form coating of silicon dioxide film on the surface of the electroluminescent phosphor zns : cu in this paper for the first time

    為了延長材料的使用壽命，本論文首次採用na _ 2sio _ 3液相水解和teos與o _ 2的常壓化學氣相沉積的方法在zns ： cu發光材料的表面包覆sio _ 2膜層。
  14. The structure of the micro differential capacitance is optimized by use of the ansys software. 3. when sih4 reacts with nh3 in a plasma - enhanced chemical vapor deposition ( pecvd ) equipment, a thin film of si3n4 is deposited on the si film

    2 .研究了微電容式壓力傳感器的差動電容結構設計和微諧振式壓力傳感器的微諧振子結構設計，利用ansys軟體對微差動電容的結構進行了優化設計。
  15. Sige simox ; 3. sige smart - cut and behavior of sige / si he terostructure implanted with hydrogen. sige film preparation : sige films were grown on silicon substrate using solid source molecular beam epitaxy ( ssmbe ), gas - solid source molecular beam epitaxy ( gsmbe ) and ultra high vacuum chemical vapor deposition ( uhvcvd ) technologies

    Sige薄膜生長方面：在熟悉各種薄膜外延技術的基礎上，採用了近年來發展較為成熟的固態源分子束外延（ ssmbe ） 、氣-固態源分子束外延（ gsmbe ） 、超高真空化學氣相淀積（ uhvcvd ）三種sige薄膜外延技術，在硅（ 100 ）襯底上外延生長了sige薄膜。
  16. In this paper, we employ the plasma enhanced chemical vapor deposition ( pecvd ) to prepare high quality zno thin film at low temperature using a zinc organic source ( zn ( c2h5 ) 2 ) and carbon dioxide ( co2 ) gas mixtures. the effect of the substrate temperature and annealing temperature on the quality of zno thin films was studied in detail

    為了在低溫下制備高質量的氧化鋅薄膜，我們採用金屬有機源和二氧化碳氣源，首次利用等離子體增強化學氣相沉積的技術在低溫下制備了高質量的氧化鋅薄膜，確定了生長高質量氧化鋅薄膜的優化條件；研究了不同的襯底溫度和退火溫度對氧化鋅納米薄膜質量的影響。
  17. In order to otain high quality zno thin films, we, for the first time, employ the plasma enhanced chemical vapor deposition ( pecvd ) to prepare high quality zno thin film at low temperature using a zinc organic source ( zn ( c2h5 ) 2 ) and carbon dioxide ( co2 ) gas mixtures. the effects of the growing condiction and the native oxide layer of si substrate on the quality of zno thin films was studied in detail. to prepare p - zno and overcome the dufficulty of reverse due to the interaction between the n atomic, we obtain high qulaity p - zno by a easy way of thermal zn3n2

    為了在低溫下制備高質量的氧化鋅薄膜，我們採用金屬有機源和二氧化碳氣源，首次利用等離子體增強化學氣相沉積的技術在低溫下制備了高質量的氧化鋅薄膜，系統地研究了生長條件以及襯底表面氧化層對薄膜質量的影響，確定了生長高質量氧化鋅薄膜的優化條件；為獲得p - zno材料，克服在zno中摻n雜質間相互作用影響摻雜效率不易獲得p - zno的困難，我們通過熱氧化zn3n2的方法制備了p - zno ，獲得了一系列研究結果： 1 、詳細研究了氣體流速比，襯底溫度和射頻功率實驗參數對氧化鋅薄膜特性的影響。
  18. In this paper, the properties of diamond is summarized at first, then the mechanism of chemical vapor deposition ( cvd ) for synthesizing diamond film is introduced and some common techniques of the cvd are commented. among these common techniques, electron aided cvd ( eacvd ) is seleceted for develepment of diamond film deposition equipment in this study, because of its high efficiency and low cost

    本文首先對金剛石的性質進行概述，然後介紹了化學氣相沉積法（ cvd ）生長金剛石膜的原理，接著對幾種常見的cvd法進行比較和評述，由於eacvd法具有高效、低成本的特點，因此在這幾種方法中選擇eacvd法作為本課題設備生長金剛石膜的方法。
  19. The paper put forward an aim to deposit n - doped titanium dioxide film on glass substrate by the atmospheric pressure chemical vapor deposition ( apcvd ) method. using ticl4 and oa as precursors, titanium dioxide thin films had been deposited by apcvd method. nitrogen had also been doped in the film when n2o gas was added as the dopant

    在實驗室條件下以ticl _ 4和o _ 2為先驅體，採用常壓化學氣相沉積法（ apcvd ）制備得到具有一定光催化性和親水性的tio _ 2薄膜，並且以n _ 2o作為摻雜劑，對薄膜進行了n的摻雜，在一定程度上提高了薄膜可見光照射下的光催化性和親水性。
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