chemical vapor deposition process 中文意思是什麼

chemical vapor deposition process 解釋
化學氣相沉積
  • chemical : adj 化學的，化學作用的；應用化學的，用化學方法獲得的。n 〈常 pl 〉化學製品；藥品。 fine chemicals...
  • vapor : n. 〈美國〉＝ vapour.
  • deposition : n. 1. 免職，罷免；廢位。2. 淤積[沉積]（物，作用）。3. 耶穌從十字架上放下（的畫、雕刻）。4. 寄存，委託；委託物。5. 【法律】口供，證言；口供書。
  • process : n 1 進行，經過；過程，歷程；作用。 2 處置，方法，步驟；加工處理，工藝程序，工序；製作法。3 【攝影...
  1. In this paper, the gas phase dissociation process during the diamond film growth from electron - assisted chemical vapor deposition ( eacvd ) by considering ch4 / h2 mixture gas as source gas had been studied by using monte - carlo computer simulation method. the eacvd gas phase dynamics model was built firstly and the low temperature deposition process was also discussed

    本工作採用蒙特卡羅（ monte - carlo ）計算機模擬的方法，對以ch _ 4 h _ 2為源氣體的電子助進化學氣相沉積（ eacvd ）金剛石薄膜中的氣相分解過程進行了研究，初步建立了eacvd氣相動力學模型，並討論了eacvd中的低溫沉積過程。
  2. The synthesis process of single - wall carbon nanotubes ( swnts ) by catalytically chemical vapor deposition ( ccvd ) was investigated and the product was characterized with transmission electron microscopy ( tem ), electron diffraction ( ed ), electron dispersive spectra ( eds ) and raman scattering spectra etc. pyrolysis of methane over solid catalysts prepared with impregnation, ion - adsorption precipitation, and sol - gel technique can all lead to the growth of swnts

    本文研究了單壁納米碳管的化學氣相沉積法（ cvd ）制備工藝，並運用透射電子顯微鏡（ tem ） 、 x - ray能譜（ eds ）與喇曼（ raman ）光譜等分析手段，對產物及催化劑進行了表徵。採用浸漬法、吸附沉澱法與溶膠凝膠法等制備了催化劑，併合成了單壁納米碳管。
  3. The synthesis process of swnts by catalytic chemical vapor deposition ( ccvd ) was investigated and the product was characterized by transmission electron microscopy ( tem ), thermo - gravimetric analysis ( tga ) and raman scattering spectra and so on in this thesis

    本文研究了單壁納米碳管的化學氣相沉積法制備工藝，並運用透射電子顯微鏡（ tem ） 、熱重分析（ tga ）與拉曼（ raman ）光譜等分析手段，對產物及催化劑進行了表徵。
  4. Chemical vapor deposition process

    化學氣相沉積
  5. Essentially, the process of reactive plasma spraying tin coating is combination of the plasma - assisted chemical vapor deposition ( pacvd ), and combustion synthesis of ti in nitrogen gas

    反應等離子噴塗tin塗層本質上是等離子輔助化學氣相沉積，以及ti在n _ 2氣中燃燒合成tin 。
  6. In this paper, the growth technology is presented for epitaxial silicon carbide films on sapphire with a buffer layer by atmospheric - pressure chemical vapor deposition ( apcvd ) process. the effect of temperature and precursors flow rates on the growth of silicon carbide films by chemical vapor deposition is analyzed. the structural properties of the films grown on sapphire compound substrate are studied by x - ray diffraction ( xrd ), x - ray photospectroscopy ( xps ) and photoluminescence spectroscopy

    本論文提出了在藍寶石上引入一層緩沖層材料形成復合襯底，採用常壓化學氣相淀積（ apcvd ）方法在其上異質外延生長sic薄膜的技術，分析了cvd法生長sic的物理化學過程，通過實驗提出sic薄膜生長的工藝條件，並通過x射線衍射（ xrd ） 、 x射線光電子能譜（ xps ） 、光致發光譜（ pl譜）和掃描電鏡（ sem ）對外延薄膜的結構性質進行分析。
  7. Finally, it is realized preliminarily that the fabrication of hollow fibers with sic films, which concludes the process of fiber - drawing and coating, can be done in an organic whole with modified chemical vapor deposition ( mcvd )

    最後，利用改進化學氣相沉積法（ mcvd ）方法，對具有sic內膜的空芯傳能光纖的內層鍍膜、拉絲一次性完成進行了探索。
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