crystal technique 中文意思是什麼

crystal technique 解釋
晶體生長技術
  • crystal : n 1 結晶，（結）晶體；晶粒；水晶（＝rock crystal）；石英。2 【無線電】晶體。3 結晶玻璃；雕玻璃；...
  • technique : n. 1. （專門）技術；（藝術上的）技巧，技能。2. 手法〈如畫法，演奏法等〉。3. 方法。
  1. This calibration is usually carried out by employing a double exposure technique in which the diffraction pattern and electron image of a crystal of molybdenum trioxide are successively exposed

    這個標準通常利用使得衍射模型和一個三氧化鉬的結晶體的電子成像成功展現的雙投照技術來執行。
  2. Piezoelectric immunosensing technique incorporates the high sensitivity of piezoelectric quartz crystal microbalance and high specificity of antibody - antigen immunoreaction, presenting some outstanding advantages including desirable simplicity, rapid response, and so on, which make it showing an attractive future of potential applications in the biochemical diagnosis of clinical diseases

    壓電免疫傳感技術結合了壓電石英晶體高靈敏性和免疫反應的高特異性，具有測定過程簡便、快速等特點，在生物分析中具有廣闊的應用前景。
  3. In this thesis, a kind of reversible immobilization method based on the plasma - polymerized film ( ppf ) used for effective immobilization of active bio - molecules and easy reproduction of sensors is developed. the surface of quartz crystal microbalance ( qcm ) is firstly prepared with plasma - polymerized film of butyl amine by glow - charge technique and then covered with a negative - charged polyelectrolyte by self - assembling. through strong electrostatic attraction, antibodies ( antigens ) positive - charged are immobilized for the determination of antigens ( antibodies )

    本論文基於等離子體聚合膜，設計了一種既能固定生物活性物質又易於傳感器再生的可逆固定化方法，即採用輝光放電的等離子體沉積技術，先在石英晶體上沉積一層正丁胺等離子體聚合膜，再在膜上自組裝一層帶負電的聚電解質，用以靜電吸附固定抗體（抗原）測定抗原（抗體） 。
  4. Thirty - one crystals of polyoxometalates ( 1d, 2d, 3d ) were prepared by means of middle hydrothermal technique, molecular design and self - assembly, and characterized structurally by single crystal x - ray diffraction. the thermal stability, activity of catalysis and magnetism of some compounds were systematically studied. the continuous appearance of p - v - o, p - mo - o, v - mo - o, v - o system with novel structure enrich polyoxometalate chemistry, the reaction characterization and the synthesis law of molybdates, tungstates and vanadates under hydrothermal conditions were explored

    由於p - v - o 、 p - mo - o 、 v - mo - o 、 v - o體系新結構不斷出現，豐富了多金屬氧酸鹽化學，探討水熱條件下釩、鉬、鎢物種的反應特性和生成規律，研究原料的選擇、配比、加料順序、濃度、酸度、反應溫度、反應時間等因素對產物的生成及結構的影響，為新的催化劑、導電材料、磁性材料的研製與開發積累經驗。
  5. Meanwhile, a method for rapid thermal fixing is presented, which has some advantages over conventional technique in stability and repeatability, while shortened the fixing time. secondly, we have designed and made a compact practical holographic system that consists of angular - fractal multiplexing system and thermal fixing equipment, including a crystal repositioner with precision less than 0. 001

    另一方面，圍繞高密度全息存儲設計復用存儲技術，製作了有較大存儲能力的小型實用熱固定全息系統，包括角度一維度復用系統、離線加熱的晶體夾持器和復位裝置、適合離線與在線加熱的溫控加熱裝置。
  6. Applications of liquid crystal temperature and velocity measurement technique to fluid experiment

    液晶測溫測速技術在流體實驗中的應用
  7. With the development of science and technology, more and more oxide crystals are synthesized by more and more advanced technique, the new oxide crystals are incessantly synthesized and the new characters of oxide crystals are incessantly founded. corundum dopped with impurity not only is cherished because of it ' s beautiful appearance, but also is used in the fields such as electrotechnics, mechanism, laser, the optic apparatus and the underlay of semiconductor. sapphire dopped with ti3 + is the best material of the tunable solid laser. zno crystal is material of the direct gap semiconductor ( the width of forbidden band : 3. 37ev ). the excited emission in zno crystal at room temperature has been found, so the ultraviolet luminescence in zno semiconductor can be acquired at room temperature

    含有少量雜質的剛玉晶體（ - al _ 2o _ 3 ）不僅由於其色澤艷麗成為人們珍愛的名貴寶石，而且由於它具有的優異性能，被廣泛應用於電工、機械、激光器，光學器件和半導體襯底材料。鈦藍寶石是目前最優異的固體寬帶調諧激光材料，用於製作飛秒脈沖可調諧激光器。氧化鋅晶體是直接帶隙寬禁帶半導體材料（禁帶寬度3 . 37ev ） ，現已發現具有室溫下受激發射特性，有可能實現室溫下半導體紫外發光。
  8. The properties of thin films have been investigated with modern analysis technique, such as afm ( atom force microscopy ), sem ( scanning electron microscope ), xrd ( x - ray diffraction ) and rocking curve ( - scan ). and the properties of ybco thin film and its substrate and deposition temperature have been analysed, comparing with lao substrate ' s crystallization quality, ybco thin film properties, such as morphology and degree of grain alignment, was concluded to correlate with the crystal orientation uniform of lao substrate as revealed by xrd

    本文結合afm 、 sem研究ybco薄膜的表面形貌， xrd 、 fwhm分析薄膜的結晶情況，並結合成膜溫度和基片的質量進行一系列結構與性能的對比研究，發現laalo3 （ lao ）基片的質量對ybco薄膜的結構完整性有很大影響，不僅影響了薄膜的c軸取向性，而且影響了ybco的超導性能。
  9. The liquid encapsulated czochralski technique for growing gaas is receiveing considerable attention because it is capable of producing, at reasonable cost, large diameter semi - insulating gaas has a use in the production of gaas integrated circuits, and for this application it must have uniform properties over the whole area of a wafer cut from a grown crystal

    目前，液封直拉技術生長gaas單晶獲得了廣泛關注，因為它能夠以合理的成本生產大直徑的半絕緣單晶。半絕緣材料是生產集成電路等微電子器件的良好材料，而這種應用就要求整個晶片具有很高的均勻性。
  10. In this paper, we prepared 110x80mm ti : al2o3 crystal ( 11 stone ) by directional temperature gradient technique ( dtgt ), choosed its top, middle part and bottom, and fabricated powder samples with carnelian mortar. then we observed and analyzed the surface of ti stone by using sem, and found it is ti that is the main component of the black thing on the surface of ti stone

    本文採用導向溫度梯度法制備了110 80mmti ： al _ 2o _ 3晶體（鈦寶石） ，並取其上部、中部、下部用瑪瑙研缽製成粉末樣品，用掃描電子顯微鏡對鈦寶石表面進行了觀察分析，結果表明鈦寶石表面上的黑色物質的主要成分為鈦。
  11. In this paper, pure and doped ktp crystals were grown from the flux using a top - seeded method, and special technique have been used to lower the electrical conductivity to three orders of magnitude than common flux ktp, the values is up to 10 - 10 ( cm ) - 1, this overcame the shortcoming that common flux ktp cannot be used in e - o application field because of having higher electrical conductivity. the growth condition, doped elements and annealing technology were investigated. single crystals of ktp with high quality and big z - cut cross section were obtained by optimizing the parameter of crystal growth

    本實驗採用頂部籽晶熔劑法生長了純的以及不同摻雜的ktp晶體，用特殊工藝處理技術將普通熔劑法ktp的電導率降低了三個數量級，達到了10 ~ （ - 10 ） （ cm ） ~ （ - 1 ） ，解決了普通熔劑法ktp晶體由於離子電導率太大而無法用於電光應用領域的困難；對ktp晶體的生長條件、摻雜元素以及退火工藝等進行了研究，通過優化生長工藝技術參數，突破了工藝技術生長難關，得到了高光學均勻性、具有大z切面的ktp單晶。
  12. Iec444 - 2 - 1980. measurement of quartz crystal unit parameters by zero phase technique in a - network [ s ]

    中華人明共和國電子工業推薦性部標準- 1989 .用型網路零相位法測量石英晶體元件參數[ s ]
  13. Furthermore, the growth and the study of self - organized quantum dots structures become more and more important recently, and the application of self - organization technique become wider and wider in this thesis, we address the theory of film growth and the growth technique firstly more, the ways and characteristics of surface detection are prescribed we mainly report the growth process, results and discuss of self - organized quantum dots structures in the a12o3 substrates by s - k mode using ecr - mocvd, in the espd - u device the growth art of ain epilayer which is the preliminary foundation of self - organized gan / ain quantum dots structures, including the substrate cleaning, nitridation, the growth of buffer and the growth of gan and ain epilayer, is discussed we deliberately compare the test result of rheed xrd and afm and achieved the optimalized condition of ain at last we have successfully realized the growth of ain which is much smooth and better crystal quality moreover, we grow the self - organized gan / ain quantum dots structure in s - k mode because the limits of the heater temperature, we can not grow the atom - smooth epilayer of ain until now so we could not grow better quantum dots which have small diameter and big density but the self - organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increased the thesis study belong to my tutor subject of national nature science foundation ( 69976008 )

    本論文主要論述了在espd - u裝置上，採用電子迴旋共振等離子體增強mocvd （ ecr - pamocvd ）方法，在藍寶石襯底上通過s - k模式自組裝生長gan aln量子點結構的生長工藝、結果及討論。而重點分析了自組裝生長量子點之前的aln外延層生長工藝，包括襯底清洗、氮化、緩沖層的生長和gan 、 aln外延層的生長；通過高能電子衍射、 x射線衍射和原子力顯微鏡測試，並且對這些測試結果進行了詳細的比較研究，得出了較優化的工藝條件，生長出了晶質較好、表面較平整的aln外延層；進而採用s - k模式自組裝生長了gan aln量子點結構。由於實驗裝置加熱爐溫度的限制，我們沒有能夠生長出原子級平滑的aln外延層表面，因而沒能夠生長出密度比較大和直徑比較小的量子點。
  14. The surface rubbing technique has been commonly used for fabricating liquid crystal display panels by lcd industry. however, the rubbing process may cause electrostatic charge, dust or scratches that tend to destroy the display quality

    然而在摩擦過程中會引起靜電、塵埃造成成品率下降，最嚴重的是摩擦產生的溝痕使微顯示器件的顯示質量降低。
  15. Abstract : the defects such as inclusion, splitting, dislocation and dendrite in the pbxla1 - x ( zry tiz sn1 - y - z ) o3 ( plzst ) single crystal grown from pbo - pbf2 flux by the slow cooling self - seeding technique were discussed in this paper. the forming mechanism of these defects were analyzed and some measures to eliminate the defects were proposed

    文摘:本文介紹了助熔劑緩慢降溫自發成核法生長的稀土摻雜鋯鈦錫酸鉛鑭（ plzst ）晶體中出現的幾種缺陷：包裹體、開裂、位錯、枝晶，分析了這些缺陷的形成機理並提出了減少和消除這些缺陷的一些措施。
  16. The effect of heating technique on the size of austenite crystal grain and the solid solution of ti nb

    固溶及奧氏體晶粒長大的影響
  17. At the same time, liquid crystal science harvests satisfyingly, its research field has extended to physics, chemistry, electronics, biology, etc. surface orientation of liquid crystal molecule ( lcm ) is a key technique in the application of lcd, the effect of orientation plays an important role in the basic performances, such as uniformity, visual angle, aberration, response, threshold of voltage and so forth

    液晶自1976年在世界上首次應用於計算器的顯示屏以來，就以其輕量、薄型、能耗低、顯示面積大等優勢在顯示應用方面得到迅猛發展，而同時，液晶科學也得到了全面發展，研究領域遍及物理、化學、電子學、生物學等各個學科。液晶分子取向控制技術是液晶板顯示應用中的一個關鍵技術，取向程度的好壞對液晶顯示器的均勻性、視角、色差、響應速度、閾值電壓等基本性能都有重要影響。
  18. The influence of nano - al2o3 on the sintering and the properties of the si3n4 ceramics was researched in this paper. the samples with different amount of nano - al2o3 were obtained by using pressureless sintering at 1600, 1650, 1700 in the nitrogen atmosphere. the microstructure and the composition of the ceramics were determined by the means of x - ray, sem, micro - hardness meter etc. it is show that the sisty ceramics can be densified at 1650c to % percent of the theory density through the addition of nano - al2o3 ( the value could be 90 percent by other technique ). the crystalline growth of the cylindrical - si3n4 and the ratio of its longitude to its diameter are increased with the addition of nano - al2o3. a uniform microstructure and an fined crystal as well as more sialon phases can be obtained in the si3n4 ceramics through the addition of that

    實驗結果表明：在碳管爐中、氮氣保護下進行燒結，添加劑為納米al _ 2o _ 3粉末時，由於納米粉末的高活性、高燒結驅動力，在1650就可使si _ 3n _ 4完全地燒結，並使其緻密度可達理論密度的96以上（比其它工藝高6左右） ；同時，納米al _ 2o _ 3地加入大大促進了長柱狀? si _ 3n _ 4的生長和發育及柱狀晶長徑比的提高，使微觀結構均勻、細化，形成了更多力學性能優異的固體? sialon相，減少了不利於陶瓷材料性能的晶間玻璃相，凈化了晶界。
  19. Fine ni3al powders with an average grain size of 6. 1 m were firstly prepared by shs method and mechanical grinding for 36ks with the ratio of ball to powder at 3. 5. the effects of grinding condition and heat treatment technique on the morphology, microstructure and composition as well as crystal structure of the prepared ni3al powders were discussed

    首先採用機械粉碎法在36ks的粉碎時間和球料比為3 . 5的工藝條件下獲得了平均粒度為6 . 1 m左右的ni _ 3al微粉，重點討論了粉碎條件及熱處理工藝對ni _ 3al微粉的形貌、微觀結構、物相組成和晶體結構等的影響。
  20. Image collecting and processing system used in liquid crystal technique

    用於熱色液晶定量測溫技術中的圖像採集及處理系統
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