dc resistivity 中文意思是什麼
dc resistivity
解釋
直流電阻率法- dc : ＝1 direct current 直流電：a DC generator 直流發電機。2 District of Columbia 哥倫比亞特區〈美國首...
- resistivity : n. 抵抗力；抵抗（性）；【電學】電阻率；電阻系數，比阻。
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Amendment 1 - insulating and sheathing materials of electric and optical cables - common test methods - part 5 - 1 : methods specific to filling compounds - drop point - separation of oil - lower temperature brittleness - total acid number - absence of corrosive components - permittivity at 23 c - dc resistivity at 23 c and 100 c
電纜和光纜用絕緣和護套材料.通用試驗方法.第5 - 1部分:填充復合物的專用方法.滴點.油分離.較低溫脆性.總酸值.無腐蝕性成分. 23時的介電常數. 23和100時的直流電阻率.修改件1 -
The conclusion showed that the oxygen always made film ' s resistivity increase. the surface sheet resistance decreases with increasing dc power of zn target, zao thin films show minimum resistivity at the power of 100w ; the conductivity get worse with further increase in dc power
實驗證明氧氣的存在，會使得薄膜導電性降低；而隨著濺射功率的增加，薄膜的導電性變好，但當功率超過100w后，薄膜的導電性反而變差。 -
4 ) the thz resistivity of doped zn0. 95cd0. 05te < 110 > crystals changes with different doping following the similar way as the dc resistivity, which results in different thz wave generation efficiency
對于有摻雜的zn吧人內。 p 11o單晶，通過不同摻雜可以改變zn95cd ste叫單晶的電阻率，從而改變樣品產生thz輻射的效率。 -
Therefore, znte crystal has been the most common material for pulsed thz wave sensing and imaging applications. kai liu et al have studied < 110 > - oriented zn1 - xcdxte crystals with various composition ratios and different doping levels to find optimal materials " parameters for high performance thz radiation emitters. they explained their experimental results from the points of view of crystal quality and crystal dc resistivity
為了進一步認識znte晶體產生thz輻射的效率與材料特性的關系，劉凱等人研究了不同組分、不同摻雜的zn _ （ 1 - x ） cd _ xte （ 110 ）單晶（ x = 0 0 . 4 ）產生thz輻射的效率，並從晶體的質量和晶體的直流電阻率出發解釋了他們的實驗結果。
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