deep etching 中文意思是什麼
deep etching
解釋
深度侵觸-
The silicon plates are formed reverse four wimble array in koh solution by wet - etching technology. then the electrochemical etching experiments are done in three poles electrobath. and some technology questions such as heat oxygenation, light etching, wet etching and electrochemical etching have been analyzed. at the same time sample appearances are analyzed by scanning electron microscope. according to current burst model theory, the electrochemical deep holes etching mechanism are analyzed
在三極電解槽中，進行了電化學深刻蝕的探索性實驗。對氧化、光刻、濕法刻蝕和電化學刻蝕中的工藝問題進行了初步的理論和實驗研究，同時，採用sem對實驗樣品進行了形貌分析，並採用電流突破模型對電化學深孔刻蝕機理進行了理論分析。 -
Developing the lithography process models to properly characterize critical dimension ( cd ) variations caused by proximity effects and distortions introduced by patterning tool, reticule, resist exposure, development and etching, they are beneficial to develop a yield - driven layout design tool, the engineers could use it to automate the tasks of advanced mask design, verification and inspection in deep sub - micron semiconductor manufacturing
建立準確描述由於掩模製造工藝、光刻膠曝光、顯影、蝕刻所引起的光學鄰近效應和畸變所導致的關鍵尺寸變化的光刻工藝模型，有助於開發由成品率驅動的版圖設計工具，自動地實現深亞微米下半導體製造中先進的掩模設計、驗證和檢查等任務。 -
Circulating device is needed in electrochemical etching course. the consequences are benefit to silicon electrochemical micromachining technology and the technology will be hopeful to become an new technology about silicon deep - holes etching technology
其結果對進一步開展這方面的研究工作具有指導意義，在進一步深入開展研究電化學體硅微加工技術時，可有望成為實現硅深孔列陣加工的新技術。 -
The processes include the deposition of the waveguide film, the design and fabrication of the mask pattern, the lithography, the metal coating with a magnetic sputtering, the lift - off process for the metal mask, the dry deep etching by icp, the slicing of the wafer, the polishing of the cutting edge, the fiber - to - waveguide alignment and at last, the performance testing. some edg chip samples are fabricated
對設計好的集成波導器件，本論文設計並試驗了器件的製作的全部工藝，包括波導薄膜的沉積，掩模的設計製作，光刻，濺射金屬薄膜，剝離法製作金屬掩模，干法深刻蝕，矽片切割，端面磨拋，波導對準和性能測試。 -
Temperature influence on etching rate of si deep trench using icp with sf6 o
刻蝕硅深槽基片溫度對刻蝕速率的影響 -
The testing results shows that the grating has a very well antireflective characteristic, and the values of testing parameters approximately equals to the designed parameters ". it indicates that the plasma - assisted etching method is very valid to fabricate deep grating
測量結果發現該光柵具有良好的增透特性，測得的光柵參數和理論設計的參數基本一致，說明等離子體輔助刻蝕是製作深光柵的有效方法。 -
Aluminium target with deep amplitude modulation fabricated by chemical wet etching process
調制靶的化學腐蝕制備工藝研究
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