emitter voltage 中文意思是什麼
emitter voltage
解釋
發射極電壓-
A particular over - current protection and drive circuit is given, the impact of resistance between gate and emitter on gate voltage dropping is discussed, and an adjustable gate - emitter resistance circuit is put forward
設計了過電流保護驅動電路，討論了柵射集電阻對降柵壓過程的影響，並提出一種可變柵射集電阻電路。 -
The sample with low emitter efficiency has completed as the method of above. this lead to the greatly decrease of the reverse recovery time and the low reverse leakage and forward voltage, especially the excellent temperature character of the leakage. the test date shows that the samples reach the first class of international level
本論文作者通過模擬測試，驗證了課題研究的理論設想，並設計製作了具有低陽極發射效率結構的高壓功率frd ，利用局域鉑摻雜和電子輻照相結合的壽命控制方式，實現器件反向恢復時間的極大減小，並且反向漏電流、軟度因子、正向壓降等關鍵參數也較理想，且具有極佳的漏電溫度特性，達到器件綜合性能的優良折衷，達到國際先進水平。 -
In the experiment we also observed negative differential resistance characteristics of gesi hbts with heavily doped base at high collector - emitter voltage and high current. a new interpretation to this phenomenon was given. this
在實驗中我們還觀察到，在高vce和大電流下，重摻雜基區gesihbt出現負阻現象，我們對這一現象進行了新的解釋，認為這是由熱電負反饋導致的。 -
Well, the ratio works similarly : if emitter current is held constant, collector current will remain at a stable, regulated value so long as the transistor has enough collector - to - emitter voltage drop to maintain it in its active mode
系數的作用與之類似：如果發射極電流保持恆定，只要集電極發射極電壓足以使其保持在放大區，集電極電流也將穩定保持。 -
The vertical structure optimization through simulation of the new structure, low loss igbt ( lpl - igbt ) has been discussed in detail in this paper. in comparison with the prevalent igbt, lpl - igbt has not only the merit of transparent back emitter and high lifetime of carriers owned by npt - igbt but also the complex n7n + voltage sustain layer structure owned by pt - igbt. not only possesses lpl - igbt lower power loss but also the other capacities are no better than npt - igbt such as break down voltage, current capacities, safe operation area and cost
與現有igbt相比較， lpl - igbt在結構上保留了npt - igbt中的透明發射區和高載流子壽命的本質優點，同時又具有pt - igbt中n ~ - n ~ +復合薄耐壓層的優點；在器件性能上， lpl - igbt不僅具有比npt - igbt更低的能量損耗（包括通態損耗和開關損耗） ，而且其餘性能如器件耐壓、電流密度、安全工作區以及製造成本等相對現有npt - igbt均有明顯改善。 -
Features : low collector - emitter saturation voltage, fast switching speed
特點:飽和壓降低，開關速度快。 -
Study shows finishing initial design of gun we can optimize the beam performance by adjusting magnetic field distribution, gun geometry, cathode magnetic field, magnetic field compression ratio, anode voltage, cathode emitter temperature and so forth
研究表明，完成電子槍的初始設計后，可以通過調整磁場分佈、電子槍結構、陰極磁場、陽極電壓等因素，優化電子注的性能。
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