epitaxial substrate 中文意思是什麼
epitaxial substrate
解釋
外延襯底-
Moke and fmr studies were performed on epitaxial single crystalline fe ph. d thesis ; investigations of magnetic properties on magnetic thin, ultrathin and patterned films ultathin films on iii - v semiconductor inas substrate with thickness of 8 - 25monolayer ( ml ). the major findings are listed below : ( 1 ) the in - plane magnetic crystalline anisotropy of film with 8 - 25 ml thick are four - fold anisotropy, and the in - plane unixial anisotropy of fe / inas films decreses faster with thickness than that in fe / gaas films. it could be explained that the stain relaxation of fe / inas films is also faster than that in fe / gaas films as indicated by leed
對于外延生長在inas襯底上、厚度為8 - 25ml的超薄fe單晶膜進行了鐵磁共振和磁光研究，獲得以下幾點結果： （ 1 ）膜厚在8 - 25ml之間時，薄膜面內的磁晶各向異性為四度對稱各向異性，垂直單軸各向異性比同厚度的fe gaas系統小許多，而立方各向異性則比fe gaas系統更接近bcc結構的fe 。 -
C - plane sapphire substrate for opto - electronic applications as nitride based led is one of the latest additions to our sapphire product line. over the years, sapphire has proven to be a reliable base substrate to grow gallium nitride epitaxial film for high brightness led
C -軸切型的藍寶石是近年來應用在生長氮化鎵藍光led重要的基材。兆晶科技新近增加此產品以因應光電業者殷切的需求。 -
The purpose of this dissertation is to study the effect of substrate on the characteristics and microstructure of high temperature superconducting yba2cu3o7 - thin film, and well c - axis oriented epitaxial ybco thin films have been deposited on both laalo3 ( 100 ) and r - plane sapphire al2o3 ( 102 ) substrates by inverted cylindrical dc sputtering ( icds ) technique
=本論文的目的是研究基片對薄膜結構和性能的影響關系，採用倒筒靶直流濺射技術在在laalo3 （ 100 ）和r -平面的藍寶石（ al2o3 （ 102 ） ）兩種基片上制備出c軸取向的外延高溫超導yba2cu3o7 -薄膜。 -
We studied the resurf, trench - gate, 3d - resurf ldmos. we designed the power switch ic based on epitaxial simox substrate, satisfying the requirements of the user. this ic can sustain 60 ~ 80v shutdown voltage overshot
在此基礎上，本文設計了性能滿足用戶要求的，基於esoi襯底結構的功率開關集成電路，該集成電路可承受60 ~ 80v的反向過沖電壓，並具有過流，過壓等保護電路。 -
Abstract : based on the ahievement of epitaxial growth in several perovskite oxide films, we discuss the importance of substrate temperature ( ts ) and substrate material in the epitaxial growth of perovskite oxide thin films. influences of ts on growth orientation and epitaxial threshold temperature were observed. the results indicate that during the growth of the oxide films the phase formation and growth dynamics should be taken into consideration. the threshold temperature for epitaxial growth depends on the substrate materials. this demonstrates the influence of substrate material on the initial nucleation and epitaxial growth
文摘:在成功地外延生長超導、鐵電、鐵磁等多種性質的鈣鈦礦結構氧化物薄膜的基礎上，討論影響氧化物薄膜外延生長的一些因素.考慮到相形成和薄膜生長動力學，在利用脈沖激光淀積法外延生長氧化物薄膜中襯底溫度是十分重要的工藝參數.襯底溫度對成相和生長薄膜的取向都有影響.考慮到薄膜是首先在襯底表面成核、成相併生長.因此襯底材料晶格的影響是不容忽視的.觀察到襯底材料對薄膜外延生長溫度的影響.在適當的工藝條件下，利用低溫三步法工藝制備得到有很強織構的外延薄膜.這突出表明界面層的相互作用對鈣鈦礦結構薄膜的取向有著相當大的影響 -
A ) si thin film with sub - micro thickness was epitaxial grown on heavy - doped si substrate by ultra high vacuum chemical vapor deposition ( uhv - cvd )
A ）利用超高真空化學氣相沉積（ uhv - cvd ）技術在重摻si襯底上生長高晶體質量的亞微米級薄硅外延片。 -
The novel method of liquid phase epitaxial growth process of p - sic from p - sic film on si substrate in c - saturated si solvent is further investigated. some processes of acquiring the fundamental technical parameters and some solution to some critical technical problems are introduced. especially, the optimized technical schemes of effectively restraining such a - sic polytypes as gh - sic coring and growing in p - sic epitaxial growth process is presented
對利用硅襯底上的- sic薄膜從碳飽和硅熔體中外延生長- sic晶體的創新方法進行了工藝探索，介紹了基本工藝參數的獲取過程和幾個關鍵工藝問題的解決方法，特別是提出了通過工藝條件的調控來有效抑制6h - sic等型同質異構體在- sic生長過程中成核生長的工藝方案。 -
Besides, a 3 inch double - sided epitaxial ybco super - conducting thin film has been deposited on laalo3 ( 100 ) substrate with the optimum deposition conditions
論文的最後階段，利用優化的工藝條件制備出了具有超導性能的3英寸ybco雙面超導薄膜 -
The paper is to propose a novel soi high - voltage structure and to design a soi power switch ic based on epitaxial simox substrate for an institute, which will be used on firing controlling system
本文目的是為某軍工電路研究所設計，應用於某軍工系統研究所的火炮控制系統的soi高壓器件及功率開關集成電路。 -
Sbn has currently being investigated as a potential material for many microdevice applications such as pyroelectric infrared detectors, electrooptic modulators, dram, etc. with the rapid development of the optical communication industry, especially the development of integrated optical devices, a successful hetero - epitaxial growth of the film on si substrate is necessary which can reduce loss in the waveguide effectively
隨著光通訊產業的迅速發展，特別是集成光學的發展，迫切需要在硅襯底上生長擇優取向性好的鈮酸鍶鋇晶體，來有效地減少光在波導結構中的損耗。本論文探討了sbn薄膜的溶膠-凝膠（ sol - gel ）生長技術及其原理。 -
Up to present we have prepared the epitaxial simox substrate ( i layer 0. 37um, silicon layer 2. 8um ), and done the circuit design, process integration, device simulation and some layout design )
本項目目前已完成了simox外延襯底的制備（ i層0 . 37um ，外延硅層2 . 8um ） ，以及功率開關集成電路的電路設計，工藝設計和部分版圖設計。 -
We have done the following work in this paper : 1. proposal of a novel high - voltage soi lateral structure ( tsoi ), and establishment of its blocking theory ; 2. proposal of devices based on epitaxial simox soi ( esoi ) substrate ; 3
本文主要進行了三個方面的工作： 1 、提出了降場電極u形漂移區的橫向高壓器件結構tsoi （ trenchsoi ） ，並建立了該結構的解析理論[ 1 ] ； 2 、提出基於simox外延襯底esoi （ epitaxialsimoxsoi ）的器件結構； 3 、設計了基於simox處延襯底結構的功率開關集成電路。 -
On the research of soi power switch ic, we proposal the devices based on epitaxial simox substrate
本文同時對基於該結構和屏蔽槽結構的soi高壓復合結構進行了研究[ 2 - 4 ] 。 -
It possess many of the physical properties such as high atomic number ( z ), large enough band gap, high resistivity, relatively low leakage currents, and high intrinsic mobility - lifetime ( ut ) product, which are required for room - temperature nuclear radiation detectors. so it is widely used in nuclear medical imaging system, space engineering, and astrophysics, environmental monitoring, and so on. in addition, it is the best substrate for lattice matched epitaxial growth of hg1 - xcdxte ( mct ) thin films and solar cells
用單晶czt製成的探測器可在室溫下工作，工作溫度范圍寬（ - 20 40 ） ，能量探測范圍寬（ 10kev 6mev ） ，對x射線、射線能量解析度高，在x射線、射線成像、天體物理研究、工業探測、安全檢測、核輻射探測、核廢料監控、 x射線熒光分析（ xrf ） 、 x射線斷層掃描和核醫學等方面有重要用途。 -
Si - based - luminescent crystal materials have very extensive and potential applications. however, high - quality epitaxial wafers are difficult to be grown on si substrate
Si基-族發光晶體材料具有極其廣泛和潛在的應用前景，然而在si襯底上卻難以生長出高質量的外延片。 -
It is proved that the approximate single crystal hetero - epitaxial sbn thin film was not formed until heat - treated at 1000 ? on si substrate
只有在1000的退火溫度下才能在si襯底上生成近似單晶外延的sbn薄膜。 -
Ohmic contacts on h2 - thermally - treated 6h - sic surface by evaporating aluminum without annealing have contact resistances of 8 10 - 3 - cm2 on room temperature and keep fairly good thermal stability under the temperature of 400. its ohmic properties do n ' t depend on the doping concentrations of the substrate, which enables us to form ohmic contacts on low dropped substrate especially on epitaxial layer
通過氫氣處理6h - sic表面並鍍鋁后直接形成的歐姆接觸室溫比電阻率達到8 10 ~ （ - 3 ） ? cm ~ 2 ，溫度不超過400時該接觸具有較好的穩定性，其歐姆特性不依賴于襯底的摻雜濃度，是一種適宜在低摻雜襯底特別是sic外延片上制備歐姆接觸的有效方法。 -
According to the requirement of innovation engineering in chinese academy of sciences, the work in this thesis focused on fabrication of soi material with epitaxial layer transfer of porous silicon and study of luminescence of modified porous silicon, and we obtained the following new results : the effect of doping and anodizing condition on the properties of porous silicon, including the microstructure, ciystallinity and surface morphology, has been studied systematically. it is found that the porous silicon and substrate have the same orientation and share a coherent boundary. but at the edge of pores, the lattice relaxes, which induces xrd peak moving of porous silicon
Soi技術和多孔硅納米發光技術研究是當今微電子與光電子研究領域的前沿課題，本文根據科學院創新工程研究工作的需要，開展了多孔硅外延層轉移eltran - soi新材料制備與改性多孔硅發光性能的研究，獲得的主要結果如下：系統研究了矽片摻雜濃度、摻雜類型和陽極氧化條件等因素對多孔硅結構、單晶性能和表面狀態的影響，發現多孔硅與襯底並不是嚴格的四方畸變，在多孔硅/硅襯底的界面上，多孔硅的晶格與襯底完全一致，但在孔的邊緣，多孔硅的晶格發生弛豫。 -
In this paper, the growth technology is presented for epitaxial silicon carbide films on sapphire with a buffer layer by atmospheric - pressure chemical vapor deposition ( apcvd ) process. the effect of temperature and precursors flow rates on the growth of silicon carbide films by chemical vapor deposition is analyzed. the structural properties of the films grown on sapphire compound substrate are studied by x - ray diffraction ( xrd ), x - ray photospectroscopy ( xps ) and photoluminescence spectroscopy
本論文提出了在藍寶石上引入一層緩沖層材料形成復合襯底，採用常壓化學氣相淀積（ apcvd ）方法在其上異質外延生長sic薄膜的技術，分析了cvd法生長sic的物理化學過程，通過實驗提出sic薄膜生長的工藝條件，並通過x射線衍射（ xrd ） 、 x射線光電子能譜（ xps ） 、光致發光譜（ pl譜）和掃描電鏡（ sem ）對外延薄膜的結構性質進行分析。
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